Abstract: A method for producing a light-emitting device includes: bonding a plurality of light-emitting elements to a plate-shaped light transmission member all at once with the plurality of light-emitting elements being arranged in a two-dimensional array extending in a first direction and a second direction; capturing an image of the plurality of light-emitting elements bonded to the light transmission member, and forming an alignment mark on the light transmission member based on positions in the image of the plurality of light-emitting elements; and after the forming of the alignment mark, forming a contact member in contact with a corresponding one of the plurality of light-emitting elements with the contact member being positioned with respect to the plurality of light-emitting elements by using the alignment mark.

Abstract: A semiconductor device includes a metal component covered by a passivation layer, wherein the metal component has a top surface and the passivation layer includes an outer layer which is substantially planar. The outer layer of the passivation layer does not extend below the top surface of the metal component.

Abstract: A metal-oxide semiconductor module includes multiple metal-oxide semiconductor components separated from one another by at least one first trench. Each of the metal-oxide semiconductor components includes a heavily doped semiconductor layer which includes a drain region, an epitaxial layer which is formed with an indentation such that the drain region is partially exposed from the epitaxial layer, and a metallic patterned contact unit. The epitaxial layer also includes a source region and a gate region that are spaced-apart formed therein. The metallic patterned contact unit includes source, gate, and drain patterned contacts which are electrically connected to the source, gate, and drain regions, respectively. A light-emitting diode display device including the metal-oxide semiconductor module is also disclosed.

Abstract: A light emission device includes: a wiring board; a plurality of light-emitting elements being disposed on the wiring board and electrically connected to a wiring layer of the wiring board; a first light diffusing member being disposed on the wiring board, the first light diffusing member having a plurality of throughholes and containing a light-diffusive material, each of the plurality of light-emitting elements being disposed in a corresponding one of the plurality of throughholes; a plurality of second light diffusing members covering the plurality of light-emitting elements and being disposed in the plurality of throughholes, each second light diffusing member containing a light-diffusive material, such that a content ratio of the light-diffusive material in each second light diffusing member is higher than a content ratio of the light-diffusive material in the first light diffusing member; and a wavelength converting member.

Abstract: A semiconductor device includes a vertical drift region over a drain contact region, abutted on opposite sides by RESURF trenches. A split gate is disposed over the vertical drift region. A first portion of the split gate is a gate of an MOS transistor and is located over a body of the MOS transistor over a first side of the vertical drift region. A second portion of the split gate is a gate of a channel diode and is located over a body of the channel diode over a second, opposite, side of the vertical drift region. A source electrode is electrically coupled to a source region of the channel diode and a source region of the MOS transistor.

Abstract: The present disclosure discloses a trench MOSFET and a method of manufacturing trench MOSFET. The trench MOSFET includes a substrate, an epitaxial layer, a plurality of trenches, and body region; the substrate has a first conductivity type; the epitaxial layer has the first conductivity type; the plurality of trenches are formed in the epitaxial layer, and at least two of the plurality of trenches are communicated with each other a gate structure is provided in the trench; the body region has a second conductivity type and has a second conductivity type and is disposed among the plurality of trenches.

Abstract: The present disclosure provides a display panel and a manufacturing method of the display panel. The display panel includes a substrate, a thin film transistor layer, a reflecting layer, an additional layer, and a mini-LED. The thin film transistor layer is disposed on the substrate. The reflecting layer is disposed on the thin film transistor layer. The reflecting layer includes a first through hole. The additional layer is disposed on the reflecting layer. The additional layer includes a second through hole. The additional layer includes particulates. The mini-LED is disposed in the first through hole and the second through hole.

Abstract: Methods and apparatus for forming a plurality of nonvolatile memory cells are provided herein. In some embodiments, the method, for example, includes forming a plurality of nonvolatile memory cells, comprising forming, on a substrate, a stack of alternating layers of metal including a first layer of metal and a second layer of metal different from the first layer of metal; removing the first layer of metal to form spaces between the alternating layers of the second layer of metal; and one of depositing a first layer of material to partially fill the spaces to leave air gaps therein or depositing a second layer of material to fill the spaces.

Abstract: The present invention discloses a double color micro LED display panel including a plurality of pixels and a plurality of barrier components. Each of the pixels includes a substrate, a first metal layer disposed on the substrate, a first light emitting layer disposed on the first metal layer and emitting a first light, a second metal layer disposed on the first light emitting layer and a second light emitting layer disposed on the second metal layer and emitting a second light. The wavelength of the second light is different from that of the first light. The barrier components respectively located between the pixels for blocking a light emitted from one of the pixels to the other of the pixels.

Abstract: The present invention discloses an array substrate, a display panel, and a manufacturing method of the display panel. The display panel includes the array substrate and a light-emitting element. The array substrate includes a substrate layer, a driving circuit layer, and a cover layer stacked in order from bottom to top. The cover layer is a gray light-absorbing material for absorbing ambient light and reflected light of the driving circuit layer.

Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.

Abstract: A display apparatus, including a light-emitting device including a device-side electrode; a driving substrate configured to drive the light-emitting device; a driver-side electrode provided on the driving substrate; and a metal layer configured to connect the device-side electrode to the driver-side electrode, and including a first interface between the metal layer and the device-side electrode, and a second interface between the metal layer and the driver-side electrode, wherein at least one of the first interface and the second interface includes an intermetallic compound.

Abstract: A semiconductor light-emitting element according to an embodiment of the present technology includes a first electrode, a second electrode, a light-emitting layer constituted by a semiconductor, and an optical functional film. The light-emitting layer includes a first surface that is connected to the first electrode and has a first convexo-concave structure, a second surface that is connected to the second electrode, has a second convexo-concave structure, and is opposite to the first surface, and a peripheral surface that continuously connects the first surface and the second surface to each other. The optical functional film coats the second surface and the peripheral surface and includes a reflecting layer capable of reflecting light emitted by the light-emitting layer.

Abstract: A light emitting device includes a light emitting structure, first and second electrodes, and a shielding layer. The light emitting structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer that are stacked along a stacking direction in such order. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer. The shielding layer is connected to aside of the light emitting structure and is adapted to absorb or reflect incident laser light.

Abstract: A method of fabricating a micro light emitting diode (LED) panel is provided. The method includes forming a semiconductor material substrate, forming a plurality of transistor devices, transferring and bonding the transistor devices onto a circuit substrate, and transferring a plurality of micro LED devices from a micro LED device substrate to the circuit substrate. The semiconductor material substrate includes a carrier, a release layer, an inorganic insulation layer, and a semiconductor material layer. The release layer is located between the carrier and the inorganic insulation layer. The semiconductor material layer is bonded to the release layer through the inorganic insulation layer. Electron mobility of the semiconductor material layer is greater than 20 cm2/V·s. The transistor devices are disposed on the release layer and are electrically connected to the circuit substrate. The micro LED devices are electrically connected to the transistor devices. A micro LED panel is also provided.

Abstract: The present disclosure discloses a trench gate semiconductor device, wherein a trench gate includes a trench formed in a semiconductor substrate, and a gate oxide layer formed on a bottom surface and a side surface of the trench; the gate oxide layer is formed by stacking a first oxide layer and a second oxide layer; the first oxide layer is a furnace tube thermal oxide layer; the second oxide layer is a PECVD oxide layer; the gate oxide layer has a thermally densified structure processed by means of RTA. The present disclosure also discloses a method for manufacturing a trench gate semiconductor device. The present disclosure can increase BVGSS of the device, without affecting the threshold voltage of the device, with simple processes and low costs.

Abstract: A method of manufacturing a light-emitting device includes: providing a wiring board that includes: a substrate, and a wiring pattern comprising: a plating base layer disposed on the substrate so as to have a gap portion that surrounds a first region in which a light-emitting element is to be mounted, and a plating layer having a groove that surrounds the first region; mounting the light-emitting element in the first region; supplying a first resin that contains a first reflective material into the groove; forming a first covering member, at least a portion of which is located in the groove and comprises: a reflective material containing layer containing the first reflective material, and a light-transmissive layer formed above the reflective material containing layer; and forming a light-transmissive member on the first covering member and the light-emitting element.

Abstract: A light-emitting diode (LED) device includes a substrate, an electrically conductive layer, a first LED chip, and an anti-electrostatic discharge element. The substrate has opposite upper and lower surfaces. The electrically conductive layer is formed on the upper surface of the substrate, and has first and second regions that are electrically separated from each other by a trench structure. The trench structure has a first segment and a second segment which connects and is not collinear with the first segment. The first LED chip is disposed across the first segment, and the anti-electrostatic discharge element is disposed across the second segment, both interconnecting the first and second regions.

Abstract: A semiconductor package includes a base substrate having a first semiconductor substrate, and a first protective layer covering a top side thereof. A first semiconductor chip is on the first protective layer. A first fillet layer fills a space between the first protective layer and the first semiconductor chip. A first side surface of the base substrate extends in a first direction, and second and third side surfaces extend in a second direction. The base substrate includes two corner regions and a side region between the corner regions. A first protective layer in the side region includes a first side trench which overlaps the first semiconductor chip. A part of the first fillet layer fills the first side trench.

Abstract: A method of manufacturing a display module includes forming a driving circuit layer on a substrate, the driving circuit layer including a plurality of driving circuits and a plurality of electrode pads electronically connected with the plurality of driving circuits; forming an adhesive layer on the driving circuit layer; transferring each of a plurality of light emitting diodes (LEDs) onto a respective area of the adhesive layer corresponding to a respective one of the plurality of electrode pads; and forming a black matrix layer on the adhesive layer, between the plurality of LEDs.