Abstract: A process for diffusing silicon into iron or iron alloy by heating the iron or iron alloy with silica and a suitable reducing agent in the presence of a catalyst.

Abstract: The invention discloses a coated substrate product comprises of a titanium or titanium alloy substrate, at least one thin interlayer composed of a non-reactive noble metal and a hard outer coating selected from the group comprised of a ceramic, hard metal, a hard metal compound and a diamond-like carbon, wherein at least the non-reactive noble metal interlayer which is immediately adjacent to the titanium or titanium alloy substrate is deposited onto the substrate by means of an electroless plating procedure, and the hard outer coating is deposited onto the non-reactive interlayer(s) by means of known chemical and physical vapor deposition techniques. The invention also discloses a method for making these coated substrate products.

Abstract: The invention comprises a pyrolytic process for the deposition of high quality silicon dioxide at temperatures of 100.degree.-330.degree. C. Deposition is achieved by reacting silane and oxygen in the 2-12 torr pressure range, yielding deposition rates of 140 .ANG./min at 300.degree. C. and 50 .ANG./min at 120.degree. C. Measurements of refractive index (1.45-1.46), field strength (3-10.times.10.sup.6 V/cm), and resistivity (10.sup.13 -10.sup.15 -cm) indicate that the oxides are near stoichiometric SiO.sub.2. This technology appears promising the Group IV and Group III-V device applications.

Abstract: A method for the production of a carbon electrode comprising disposing an electroconductive and flexible electrode substrate within a reaction tube to which a gaseous material gas of hydrocarbons is supplied, directly depositing a carbon material on said electrode substrate by chemical vapor deposition at 1500.degree. C. or less so as to coat said electrode substrate with a carbon material, and rolling said electrode substrate coated with the carbon material, resulting in a thin-plate shaped carbon electrode having a high density.

Abstract: A process for applying and bonding a solid lubricant on a substrate whose surface has depressions and pores. The process comprises depositing fine solid lubricant particles on the surface of a substrate to be lubricated in excess of a quantity sufficient to fill essentially all depressions and pores on the substrate surface, and thereafter burnishing the substrate to distribute and bond the lubricant particles on the substrate. Such burnishing of the substrate can be accomplished during its moving contact with another substrate during intended use. Maintenance of lubricity can be accomplished by depositing additional lubricant particles on the substrate and thereafter burnishing, and can be performed while the substrate is in moving contact with another substrate whereby this moving contact performs the burnishing operation.

Abstract: A stainless steel wire for springs is proposed which has a colored coating of resinous paint thereon. The wire is coated with a paint, dried and baked to form a coating and is then drawn to a desired diameter. The coating has a good adhesiveness and good heat resistance. The stainless steel wire may be nickel-plated before painting.

Abstract: A process for forming a borosilicate glass layer on a sharply profiled surface of a semiconductor device comprising the steps of: heating the device; conveying the device through a deposition chamber at atmospheric pressure; directing silane gas, diborane gas, and oxygen into the chamber and the surface of the heated device where they react and form a borosilicate glass layer on the surface so that smooth corners are formed for the sharply profiled surface of the semiconductor device.

Abstract: An optical recording medium using a recording layer of an alloy taking two different crystalline states exhibiting different reflectivities is preferably manufactured by depositing a plurality of layers, each of which consists essentially of an element or an intermetallic compound, i.e. a material having a lower crystallizable temperature, to form a recording layer having a desired average chemical composition, while heating a substrate on which the recording layer is being deposited.

Abstract: A method of forming a textured layer of tin oxide on a vitreous substrate in which the thickness and degree of texture of the layer can be controlled independently of one another. The method comprises the steps of depositing a first film of tin oxide on the substrate by chemical vapor deposition from a first reactant mixture of tin chloride, water, and an alcohol and depositing a second film of tin oxide on the first tin oxide film by chemical vapor deposition from a second reactant mixture of tin chloride and water. Where the substrate is ordinary soda lime glass, it preferably is first coated with a film of silicon dioxide. The method permits deposition of substantially uniform layers of tin oxide in a continuous deposition process.

Abstract: A plasma CVD process for forming silicon nitride-type or silicon dioxide-type films onto a substrate comprising the steps of:(a) introducing di-tert-butylsilane and at least one other reactant gas into a CVD reaction zone containing said substrate on which either a silicon nitride-type or silicon dioxide-type film is to be formed;(b) maintaining the temperature of said zone and said substrate from about 100.degree. C. to about 350.degree. C.;(c) maintaining the pressure in said zone from about 0.1 to about 5 Torr; and(d) passing said gas mixture into contact with said substrate while exciting said gas mixture with a plasma for a period of time sufficient to form a silicon nitride-type or silicon dioxide-type film on said substrate, wherein said plasma is excited by a RF power at about 10 to 500 Watts.

Abstract: A thermal CVD process for forming silicon nitride-type or silicon dioxide-type films onto a substrate comprising the steps of:(a) introducing di-tert-butylsilane and at least one other reactant gas into a CVD reaction zone containing said substrate on which either a silicon nitride-type or silicon dioxide-type film is to be formed;(b) maintaining the temperature of said zone and said substrate from about 450.degree. C. to about 900.degree. C.;(c) maintaining the pressure in said zone from about 0.1 to about 10 Torr; and(d) passing said gases into contact with said substrate for a period of time sufficient to form a silicon nitride-type or silicon dioxide-type film thereon.

Abstract: Method for coating boron particles with a thin ceramic layer. The method provides for thermal decomposition of a hydrocarbon gas in the presence of the boron particles. The coated particles are useful in fuels, giving improved combustion in solid propellant and ramjet fuels.

Abstract: A method for forming a deposited film comprises effecting a step (a) and a step (b) at least one time, the step (a) being introduction of a starting material (A) which is either one of a gaseous starting material for formation of a deposited film or a gaseous halogenic oxidizing agent having the property of oxidative action on said gaseous starting material into a film forming space in which a substrate for film formation is arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step (b) being the introduction of a starting material (B) which is the other of said gaseous starting material and said gaseous halogenic oxidizing agent into said film forming space, thereby causing surface reaction on said adsorbed layer (I) to occur to form a deposited film (i).

Abstract: A process for the evaporation deposition of a layer of metal on a workpiece is described in which a charge of a metal is placed in a crucible formed of a material having a vapor pressure lower than the vapor pressure of the metal at a selected temperature, a shield is placed between the workpiece and the crucible, and the crucible is then heated to a first temperature sufficient to melt said charge, but insufficient to cause substantial evaporation of said charge following which the crucible is heated to a second temperature level for a time sufficient to fractionally distill the charge and sublime or vaporize any non-metallic contaminants in said charge and finally the crucible is heated to a third temperature sufficient to evaporate the charge at a selected rate at which time the shield is removed from between the cricuble and the workpiece to permit evaporant from the charge to coat the workpiece.

Abstract: A method for producing the disclosed material comprises introducing into a chemical vapor deposition (CVD) reactor a mixture of process gases comprised essentially of (1) tungsten hexafluoride, (2) a volatile oxygen- and hydrogen-containing organic compound, and (3) hydrogen; controlling the ratio of the tungsten hexafluoride to the oxygen- and hydrogen-containing organic compound within the CVD reactor so that the W/C atomic ratio is within the range of about 0.5 to about 15; controlling the reaction temperature so it is within the range of above about 300.degree. to less than about 650.degree. C.; controlling the total pressure within the range of about 1 Torr. to about 1,000 Torr.; and controlling the ratio of H.sub.2 to WF.sub.6 within the range of about 4 to about 20; to produce W and W.sub.2 C, W and W.sub.3 C, or W and W.sub.2 C and W.sub.3 C.

Abstract: A method for forming deposited film, which comprises effecting a step [A] and another step [B] at least one time, the step [A] being the introduction of a starting material (A) which is either one of a gaseous starting material (I) for formation of a deposited film and a gaseous halogenic oxidizing agent (II) having the property of oxidative action on said starting material into a film forming space in which a substrate of which at least the surface to be filmed thereon has crystal orientability is previously arranged to have said starting material adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step [B] being the introduction of the other starting material (B) into said film forming space, thereby causing the surface reaction on said adsorption layer (I) to occur and form a deposited film.

Abstract: Silicon carbide protective films are produced on the surface of metallic or metal-impregnated substrates. A silicide or silicon diffusion coating is initially formed on the surface of the substrate, and subsequently said surface is treated with a gas stream which is reducing to the coating and substrate and contains a gaseous carbon source at a temperature greater than 500.degree. C.

Abstract: A method for forming a deposited film, which comprises introducing a gaseous starting material containing an element in the Group II of the periodic table, a starting material containing an element in the Group VI of the periodic table which are gasifiable for formation of a deposited film, and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.

Abstract: A method for forming a thin film multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises the step of forming at least one layer of the semiconductor thin films on a substrate by energizing a heat-generating member constituted of either a single substance or an alloy of a transition metal element having the catalystic effect provided in a film forming space to effect heat generation, bringing a starting material (A) for deposited film formation containing at least one element of halogens and hydrogen in the molecule and a compound (B) containing an element which becomes at least one of the valence electron controller and the band gap regulator into contact with the heat-generating member under heat generating state to cause a thermal dissociation reaction to effect activation, thereby forming a precursor (X) which becomes the starting material for deposited film formation and

Abstract: A method for forming a deposited film comprises introducing a gaseous starting material containing In atoms or Sn atoms for formation of a deposited film, a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material and an oxygen-containing gaseous compound into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing a presursor under excited state, and forming a deposited film on a substrate existing in a film forming space with the use of at least one precursor of these precursors as a feeding source for a constituent element of the deposited film.