Abstract: A method for forming a deposited film, which comprises introducing gaseous starting materials, containing group III and/or group V compound as the constituent element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film of a substrate existing in a film-forming space with the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.

Abstract: A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (B) for formation of a band gap controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a deposited film controlled in band gap on a substrate existing in the film forming space.

Abstract: The present process results in a surface which is impermeable and resistant to the action of chemical substances and heat. Natural stones such as marble, travertine, granite and structural and ornamental works made out of these stones are protected from atmospheric and chemical process of degradation by a novel method of sanding down the surface with an industrial diamond abrasive to open up the pores of these solids; rinsing with water, removing water with a chemical solvent and wiping with a tack cloth to remove microchips. A protective mixture in the form of a moisture-cured polyurethane is then applied to the surface of the stones. The moisture-cured polyurethane acts as a sealant for the pores of the stones and as a chemical polish on the surface of the stones, such sealant being impermeable and resistant to the action of stains produced by chemical substances.

Abstract: A method of coating a surface of recrystallized silicon body by CVD method comprising a step of heating a feedstock gas containing a silicon source and a carbon source and said non-metallic element by a resistance heat which is generated by electrifying said non-metallic element.

Abstract: A method for coating single crystal whiskers of carbides, nitrides or carbonitrides of Ti, Zr, Hf, V, Nb, Ta, or W with one or more layers of a carbide, nitride or carbonitride of Ti, Zr, Hf, Nb, Ta, or W, or oxides of Al, Zr, or Hf. The method involves flowing past the whiskers at about 1025.degree.-1125.degree. C. a mixture of hydrogen and one of the following gaseous mixtures: Group I comprises one or more of Ti, Zr, Hf, Nb, Ta, or W hhalides mixed with one or more of N.sub.2, NH.sub.3, or suitable free carbon forming aliphatic hydrocarbons. The atomic ratio of carbon and/or nitrogen to metal is about 5:1-16:1, and the volume ratio of hydrocarbon and/or N.sub.2 and/or NH.sub.3 to H.sub.2 is about 1:5 to 1:20. Group II comprises one or more Al, Zr, or Hf halides mixed with one or more suitable oxygen donor gases, in proportions selected to form the desired metal oxide.

Abstract: Defects in green, unsintered ceramic casting cores which contain a thermoplastic binder are repaired according to this invention. In a preferred embodiment, a mixture of a volatilizable solvent and ceramic particles are applied to the defect. The solvent softens the binder in the core, and the loose ceramic particles patch the defect area. After the solvent volatilizes, the binder hardens and binds the newly applied particles to the core. Then, the repaired core is heated to a first temperature to volatilize the binder, and then to a second, higher temperature to sinter the ceramic particles to each other.

Abstract: A process for producing an electroluminescent device comprises providing in a film forming space for forming an electroluminescent film a substrate having an electrode formed on the surface thereof, said electrtode optionally having a first insulating layer formed thereon, introducing into said film forming space the compounds (A), (B) and (C) represented by the general formulae (A), (B) and (C) shown below and a gaseous halogenic oxidizing agent capable of chemically reacting with at least one of said compounds (A), (B) and (C), respectively, to thereby form an electroluminescent film on said electrode of said substrate, and if desired forming a second insulating layer and electrode in succession thereon:MmRn (A)AaBb (B)JjQq (C)wherein m is a positive integer equal to the valence of R or said valence multiplied by an integer, n is a positive integer equal to the valence of M or said valence multiplied by an integer, M is zinc (Zn) element, R is hydrogen (H), halogen (X) or hydrocarbon group; a is a positive

Abstract: This invention relates to a process for the preparation of a surface of a uranium and titanium alloy, and more specifically to etching the surface of said alloy for purposes of preparing said surface for nickel plating. More specifically, the process comprises chemically etching the surface of the uranium and titanium alloy with a solution comprising lithium chloride and hydrochloric acid. The process of this invention further provides for recovering the uranium dissolved in the etching solution and recycling said solution. The uranium is recovered from the etching solution by means of an ion exchange resin with the etching solution being recycled to the etching process.

Abstract: Process for preparing a functional film deposited on a substrate having practically applicable characteristics which is usable as a photoconductive member in semiconductor device, image input line sensor, image pickup device on the like by generating an active species by subjecting a gaseous substance capable of being activated to generate said active species to the action of activating energy in an active species generating and transporting space leading to a film forming space containing the substrate;simultaneously generating a precursor by subjecting a gaseous substance capable of generating said precursor to the action of activating energy in a precursor generating and transporting space located separately from and within the active species generating and transporting space and open in a downstream region of that space; andintroducing the resulting active species and precursor into the film forming space to chemically react to form the functional deposited film on the substrate in the absence of plasma.

Abstract: A process for the chemical vapor deposition on substrates of coatings comprising compounds of a titanium sub-group of metals, the vanadium sub-group of metals and the chromium sub-group of metals at temperatures in the range of 250.degree. C. is disclosed. Sub-halides, such as TiCl.sub.3, are reacted with N.sub.2 and H.sub.2 and thermodynamic and kinetic parameters are manipulated by flow rates and partial pressures of the reactants to achieve the deposition reaction in the temperature range of 250.degree. C. to 850.degree. C. The invention also relates to a metal compound coated article. An apparatus for performing the process is also disclosed.

Abstract: A method for forming a thin multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises forming at least one layer of said semiconductor thin films on a substrate by introducing a precursor (B) formed in a decomposition space (B) which becomes the starting material for deposited film formation and an active species (C) formed in a decomposition space (C) which interacts with said precursor (B) separately into a deposition space (A) for forming a thin film to thereby effect chemical reaction through the interaction between said precursor (B) and said active species (C), and forming at least one layer of other thin films by introducing a gaseous starting material (a) for thin film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a p

Abstract: A method for restoring and preserving bronze gravestones is disclosed and calls first for cleaning the surface to remove any scale or corrosion present by applying a dilute acid solution to the bronze surface. Then, any raised features are roughly polished after which the entire surface is coated with marker stain which will ultimately provide a contrasting background to the raised features. After the marker stain has dried, it is selectively removed from the raised features which are then further polished with fine steel wool. A clear lacquer finish is applied over the surface and allowed to thoroughly dry, preferably overnight. The restoration process is completed by applying a unique liquid preservative mixture to the metal surface. One preferred embodiment of the preservative contains, by weight: paraffin--19%, mineral spirits--70%, lemon oil--3% and silicone--8% although other proportions are discussed and contemplated.

Abstract: A method of a chemical vapor deposition wherein a first reactive gas containing a metal element and a second reactive gas containing metal element are fed into a reaction chamber in which at least one substrate is disposed under reduced pressure and said substrate is irradiated by a light beam, so that the growth rate of a thin film containing the metal element which to be formed on the surface of the substrate can be increased with the consumption of the reactive gas containing the metal element which is less than that of the conventional methods. The flows of the reactive gases can be maintained in a laminar flow state with good controllability in the entire area of the vicinity of the substrate.

Abstract: In a chemical vapor deposition chamber, an improved technique for providing deposition materials to the growth surface is described. The gas carrying deposition materials is constrained to have axial symmetry thereby providing a uniform deposition of materials on the substrate. The gas can be initially directed toward the substrate with a generally uniform perpendicular velocity. The gas can be introduced into the deposition chamber through a multiplicity of apertures and is extracted from the vicinity of the substrate in a manner to preserve the axial symmetry. The apparatus permits convenient control of the deposition process by varying the distance between apparatus introducing the gas carrying the deposition materials and the substrate. The flow of gas minimizes the problems arising from autodoping of the growth layer of material. The flow of gas and generally small size of the deposition chamber minimize particulate contamination of the growing film.

Abstract: A vapor phase deposition method for the GaAs thin film is disclosed, which is characterized in that, in the metal organic chemical vapor deposition method (MOCVD method) wherein arsine gas and organic gallium gas are decomposed thermally and GaAs crystals are allowed to deposit onto the GaAs substrate, for the deposition of n-type conductive GaAs crystals, arsine gas and organic gallium gas are supplied at such a supplying ratio (V/III) as p-type conductive GaAs crystals are deposited unless an impurity is added intentionally and gas of the compounds of VI group elements is added to these gases to make n-type conductive GaAs crystals having a carrier density of not less than 1.times.10.sup.16 cm.sup.-3.

Abstract: A process for depositing a gallium nitride film on a substrate. A source compound is provided which has the formula:H.sub.3 GaNR.sub.3Each R is independently selected from alkyl groups having from 1 to about 4 carbon atoms. The source compound is conveyed into a deposition chamber containing a substrate. The source compound, maintained in the gaseous phase, decomposes in the deposition chamber and optionally reacts with other materals in the deposition chamber. Gallium nitride is deposited on the substrate as a result.

Abstract: Method of producing a ferroelectric thin film by chemical vapor deposition, by providing a gaseous mixture containing oxygen and a gaseous raw material containing (A) alkyl lead and or alkyl bismuth together with an alcoholate of titanium, zirconium, silicon, germanium or niobium, (B) alkyl lead and alkyl germanium, or (C) alkyl bismuth and alkyl lead, and reacting the oxygen and gaseous raw material to oxidize the components of (A), (B) or (C), to form the thin film on the substrate.

Abstract: Surfaces containing hydroxyl groups are rendered water-repellent through exposure to hydridoaminosilanes of the general formulaH.sub.x Si(NRH).sub.y (NR.sub.2.sup.1).sub.3-yIn particular, tris(dimethylamino)silane and its derivatives have been found to make substrates with hydroxyl-containing surfaces hydrophobic without adversely effecting the physical properties of the substrate being treated and without the necessity of and pre- or post-treatment steps (i.e. moisturizing, neutralizing, etc.).

Abstract: The present invention relates to method for the production of a thermal fixing roller which comprises steps of applying a silicone rubber layer to the surface of a shaft, thereby forming a silicone rubber roller, applying a polytetrafluoroethylene coating to the surface of the silicone rubber roller by immersing the roller in a polytetrafluoroethylene dispersion and rotating the silicone rubber roller in a plane inclined with respect to a horizontal plane, removing the silicone rubber roller from the polytetrafluoroethylene resin dispersion, drying the coating on the outside of the silicone rubber roller at a temperature of at least 500.degree. C. for 10 to 120 seconds, preheating the coating from the inside of the silicone rubber roller, thereby elevating the temperature of the coating to a temperature which is less than that of the melting point of the polytetrafluoroethylene resin, and baking the coating to a temperature which is at least that of the melting point of the polytetrafluoroethylene resin.

Abstract: Described is a method for depositing from the vapor phase a chemical species into the form of a thin solid film material which overlays a substrate material. The deposition process consists of three steps: (1) synthesis of depositing species, (2) transport of said species from site of synthesis to a prepared substrate material, and (3) condensation and subsequent film growth. The transport step is achieved by admixing small concentrations of the depositing species into the flow of a high speed jet of an inert carrier gas. This jet impinges on the substrate's surface and thereby convects the depositing species to this surface where condensation occurs. Since the gas mixture is at fairly high pressure, the deposition is achieved in a simple flow apparatus rather than in the high vacuum systems required of other methods. Also this transport technique allows the chemical and/or physical phenomena utilized in the depositing species synthesis step to be isolated from the actual condensation reaction.