Abstract: A process for providing a highly reflective, protected gold coating on quartz is disclosed. A thin layer of gold chromium is vapor deposited on the quartz followed by vapor deposition of an essentially pure gold layer, application of a protective polymer overcoat and heating at about 450.degree. F. for 12-16 hours. The gold chromium provides excellent adhesion between the quartz and the reflective layered structure whereas the polymer protects the gold from mechanical abrasion and erosion, for example, for water, and against heat.

Abstract: A deposited film is formed by introducing a gaseous starting material, a gaseous halogenic oxidizing agent and at least one oxygen or nitrogen type oxidizing agent into a reaction space to form excited precursors and thereafter forming a deposited film on a substrate in a film forming space employing the excited precursors. If desired, a gaseous material containing a component for valence electron control can be added to the reaction space.

Abstract: A process for the co-diffusion of aluminum and other elements into austenitic steel which includes heating the steel to a temperature at which co-diffusion occurs in the presence of a source of aluminum, a catalyst and metallic or metalloid elements having substantial solubility in ferrite (bcc phase of iron or iron alloy) so that a microstructure is formed on the steel which is a single layer composite and which includes a fine dispersion of compatible aluminide particles in a continuous ductile ferrite matrix.

Abstract: A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.

Abstract: A method for imparting water repellency to absorbent inorganic building materials by first contacting at least a part of the surface of the building materials to be rendered water repellent, with at least partially liquid water and thereafter applying a solution containing an organosilicon compound and a water-immiscible organic solvent to the moist surface of the inorganic building materials.

Abstract: A method for forming metal nitride films is provided comprising employing the techniques of chemical vapor deposition to thermally decompose a vapor comprising a dialkyl(Group III metal) azide, so as to deposit a film of the corresponding metal nitride on the surface of a substrate.

Abstract: A process for forming a deposited film which comprises introducing a linear, branched or cyclic gaseous silane compound represented by a general formula:Si.sub.x H.sub.y X.sub.zwherein X stands for a halogen atom, x is an integer 3, 4, 5 or 6, and y+z=2x or 2x+2; into a film forming space for forming a deposited film on a substrate, activating said silane compound on the surface of the heated substrate to generate a precursor functioning as a raw material for forming the deposited film, generating an active species capable of an interaction with said precursor in a separate activating space, and introducing said active species into the film forming space to form a deposited film on said substrate.

Abstract: A metal thin film is deposited on predetermined portions of an underlayer of a substrate by a chemical deposition method with good selectivity, good reproducibility and high deposition rate by preventing hydrogen atoms from the adhesion to portions of the substrate not to be deposited with a metal using a special means for heating only the substrate or a special gas flow controlling means.

Abstract: In a process for preparing a coated cemented carbide cutting insert, a layer of titanium carbide containing eta phase is first vapor deposited directly adjacent a cobalt cemented tungsten carbide substrate and the eta phase is then removed by contacting the titanium carbide surface with a carburizing gas under suitable conditions to convert the eta phase to elemental cobalt and tungsten carbide.

Abstract: In a pulsed radio frequency plasma deposition process the pulse repetition frequency is matched to the gas exchange rate. This is achieved by using a pulse width of 50 to 500 microseconds and a pulse repetition rate corresponding to the time within which gas is exchanged in the reaction region.

Abstract: The present invention provides a method of treating a SIMOX wafer so that oxygen precipitates and heavy metal, carbon, and other contaminants are substantially reduced. The method includes forming a protective layer on the SIMOX surface, heating the wafer and protective layer so that the precipitates and contaminants disolve and diffuse into the protective layer, and slowly cooling the wafer to permit continued diffusion during cooling.

Abstract: A method for forming a deposited film by introducing the active species (A) formed by decomposition of a subjective starting material gas (A) which is the major flow rate component and the active species (B) formed by decomposition of an objective starting material gas (B) which is the minor flow rate component and the activated species (C) formed from a compound (C) separately from each other into a film forming space for formation of a deposited film on a substrate and permitting said active species (A) and active species (B) to chemically react with said activated species (C) to thereby form a deposited film on the substrate comprises forming a multi-layer structure film by varying the amount of said active species (B) introduced into the film forming space.

Abstract: In a method of manufacturing a contact construction material structure a corrosion resistant contact layer of silver, palladium, or alloys thereof is applied to a metal base, a gold coating is applied to the contact layer surface by molecular gold material deposition and the contact construction structure is then heated to 350.degree. to 650.degree. C. for a short period of time to cause diffusion of the gold coating into the corrosion resistant contact layer to further improve its corrosion resistance.

Abstract: A silicon diffusion coating is formed in the surface of a metal article by exposing the metal article to a reducing atmosphere followed by treatment in an atmosphere of 1 ppm to 100% by volume silane, balance hydrogen or hydrogen inert gas mixture. Hydrogen with a controlled dew point is utilized as a surface preparation agent and diluent for the silane.

Abstract: A method for preparing a multi-layer structure film by forming a deposited film according to the chemical vapor depostion method comprises introducing a subjective starting material gas (A) which is the major flow rate component and an objective starting material gas (B) which is the minor flow rate component and hydrogen externally activated into a reaction space and controlling periodically the amount of said objective starting material gas (B) introduced to thereby form a deposited film with a multi-layer structure.

Abstract: A method for forming a deposited film comprises introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.

Abstract: A process for coating a synthetic resin optical substrate by subjecting the surface of the substrate to low temperature ion bombardment prior to coating in order to open the chemical bonds on the surface of the substrate and coating the substrate surface before the bonds return to their normal or closed condition. The substrate may also be subjected to low temperature ion bombardment during and after coating to further improve coating adherence and abrasion resistance characteristics.

Abstract: A method for restoring the finished appearance of a damaged area on a painted surface is disclosed. An aerosol mixture of color-matched paint is sprayed onto the damaged area and onto the undamaged painted surface bordering the damaged area. The wet paint deposit is then contacted with a film of wax. The excess paint and wax are wiped away before the paint deposit becomes tacky. The cavity within the damaged area is substantially filled with a deposit of color-matched paint, without a noticeable transition from the restored surface to the original painted surface. Curing of the wet paint deposit is accelerated by contacting the paint deposit with a synthetic polishing wax which includes siloxane.

Abstract: In a vapor deposition process (e.g. MOCVD) for producing an arsenic-containing film on a substrate by thermally decomposing at least a vaporous organo arsenic compound upon a heated substrate, the improvement wherein the organo arsenic compound consists essentially of a C.sub.1 to C.sub.3 monoalkylarsine carried to the heated substrate by means of a flow of an inert carrier gas.

Abstract: A method for forming a deposited film comprises introducing into a reaction space containing a substrate (a) a gaseous starting material for the formation of a deposited film, (b) a gaseous oxidizing agent, and optionally (c) a gaseous material containing a valence electron controller component; effecting chemical contact therebetween to form a plurality of precursors including precursors in an excited state; and forming a deposited film on the substrate with at least one of the precursors.