Patents Examined by Sadie L. Childs
  • Patent number: 4861623
    Abstract: A method for forming a deposited film comprises introducing a gaseous starting material containing silicon and/or germanium atoms; a starting material containing at least one member selected from the group consisting of aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), and tantalum (Ta), which is capable of being converted to gaseous state; and a gaseous halogenic oxidizing agent which exerts an oxidative effect on the said starting materials for film formation, into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursors of said percursors as the feeding source for the constituent element of the deposited film.
    Type: Grant
    Filed: December 16, 1986
    Date of Patent: August 29, 1989
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masao Ueki, Masaaki Hirooka, Junichi Hanna, Isamu Shimizu
  • Patent number: 4844986
    Abstract: A method for preparing stable even coatings of a silicone lubricant on a low surface energy polymeric surface of an article includes plasma treatment of the surface in an atmosphere of a siloxane monomer. A layer of polysiloxane is deposited on the low energy surface to give a polysiloxane surface. A film of a polysiloxane lubricant having a surface tension substantially the same as or less than the surface energy of the polysiloxane surface is applied to the polysiloxane layer.
    Type: Grant
    Filed: February 16, 1988
    Date of Patent: July 4, 1989
    Assignee: Becton, Dickinson and Company
    Inventors: Mutlu Karakelle, Richard J. Zdrahala
  • Patent number: 4830873
    Abstract: In a process for applying a thin, transparent layer onto the surface of optical plastic elements for protecting the surface of such element against mechanical and chemical influences that surface is subjected to a monomeric vapor of organic compositions, preferably a silicon-organic substance in a vacuum container and a protection layer is separated from the vapor phase with the assistance of the radiation from an electrical gas discharge. Substances, in particular oxygen are added to the monomeric vapor during the polymerization which increases the layer hardness. The addition of these substances is performed with a delay with respect to the start of the polymerization process, so as to assume a good adherence of the layer on the surface.
    Type: Grant
    Filed: November 7, 1985
    Date of Patent: May 16, 1989
    Assignee: Robert Bosch GmbH
    Inventors: Gerhard Benz, Gerda Mutschler, Gunter Schneider
  • Patent number: 4828938
    Abstract: A method for chemical vapor deposition of materials containing tellurium, such as cadmium telluride and mercury cadmium telluride, wherein the reactant source of the tellurium is a tellurophene or methyltellurol. These reactant sources have high vapor pressures, and the reactant source vapors emitted from the reactant sources have decomposition temperatures of less than about C., so that deposition may be accomplished at low temperatures of about C. The reactant source vapor containing tellurium is mixed with a reactant source vapor containing another substance to be codeposited, such as dimethylcadmium or dimethylmercury, and contacted with a substrate maintained at the deposition temperature, the deposition being preferably accomplished in an inverted vertical chemical vapor deposition reactor.
    Type: Grant
    Filed: April 11, 1986
    Date of Patent: May 9, 1989
    Assignee: Hughes Aircraft Company
    Inventors: Lawrence S. Lichtmann, James D. Parsons
  • Patent number: 4822636
    Abstract: A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (D) for formation of a valence electron controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a doped deposited film.
    Type: Grant
    Filed: December 16, 1986
    Date of Patent: April 18, 1989
    Assignee: Canon Kabushiki Kaisha
    Inventors: Keishi Saitoh, Masaaki Hirooka, Junichi Hanna, Isamu Shimizu
  • Patent number: 4789560
    Abstract: High quality silicon oxide is grown for integrated circuits by oxidizing poly-crystalline silicon under an oxygen gas flow. A diffusion stop layer of thermal silicon nitride is formed on the underlying substrate prior to the deposition of the poly layer to be oxidized. The nitride layer isolates the substrate from diffused oxygen within the poly layer during oxidation, permitting a non-critical, oxidation time. Extension of the oxidation period elimates extended imperfect or "loose" chemical bonds throughout the oxide layer formed. Corner stress common in trench applications is minimized because the nitride prevents oxidation in the substrate. The oxidation of undoped poly over doped poly proceeds conformally because the nitride layer therebetween inhibits the enhanced oxidation effect of impurities in the doped poly.
    Type: Grant
    Filed: January 8, 1986
    Date of Patent: December 6, 1988
    Assignee: Advanced Micro Devices, Inc.
    Inventor: Yung-Chau Yen
  • Patent number: 4788084
    Abstract: Filaments, yarns or tows of metal coated nonmetallic and semimetallic materials, e.g., nickel coated graphite, are sized, e.g., with poly(vinyl acetate), and/or oxidized, e.g., in steam at an elevated temperature to produce a surface of nickel oxide, and the resulting products mix more readily into plastic materials and have enhanced processability when knitted and woven.
    Type: Grant
    Filed: June 24, 1983
    Date of Patent: November 29, 1988
    Assignee: American Cyanamid Co.
    Inventor: Louis G. Morin
  • Patent number: 4784923
    Abstract: Disclosed is a method of producing a hard metal alloy with a surface region enriched with a first component being at least one of the carbides, nitrides and carbonitrides of tantalum, niobium, vanadium or combinations thereof wherein the atomic percent ratio of a second component present in the alloy and being selected from the carbides, nitrides and carbonitrides of titanium, hafnium and zirconium and combinations thereof to the first component is in the range of from 0 to about 1.5. Also disclosed are hard metal alloys having said surface enriched region which can be used to produce cutting tools which are resistant to galling and crater formation.
    Type: Grant
    Filed: June 19, 1986
    Date of Patent: November 15, 1988
    Assignee: Carboloy Inc.
    Inventor: Donald E. Graham
  • Patent number: 4777064
    Abstract: A first method for reducing the penetration of paving grade asphalts. Paving grade asphalt is blended with a solvent extracted resin-asphaltene residuum in the proportions of approximately 75% to 25% by weight, respectively, to yield penetration of 25 or less of the resulting mixture.A second method of applying the reduced penetration asphaltic product mixture, obtained by the first method, to a granular surface. The asphaltic mixture is first diluted with an evaporative diluent and then spread over a granular surface so as to penetrate into and stabilize the underlying granular material.
    Type: Grant
    Filed: June 2, 1987
    Date of Patent: October 11, 1988
    Inventor: Eugene M. Stone
  • Patent number: 4777060
    Abstract: A method is provided for making a composite substrate for electronic semiconductor parts. The composite substrate has a metal core, an insulating layer, and a conducting layer. The insulating layer is deposited by chemical vapor deposition in the gaseous phase on the metal core, or by chemical vapor deposition in combination with other techniques, such as plasmaspraying and/or melting. The metal core is comprised of a highly heat-resistant refractory metal, e.g., molybdenum, tungsten, titanium, molybdenum-manganese alloy, or a high-alloy steel having a permeability of about 1.002. The insulating layer is comprised of an inorganic material such as aluminum oxide or aluminum nitride. The conducting layer typically comprises copper.
    Type: Grant
    Filed: September 17, 1986
    Date of Patent: October 11, 1988
    Assignee: Schwarzkopf Development Corporation
    Inventors: Kurt Mayr, Reinhard Staffler, Werner Tippelt, Walter Scharizer
  • Patent number: 4770908
    Abstract: A process for preparing a porous ceramic membrane to be employed for separating condensible gases and so on, which process comprises disposing on a porous ceramic substrate a layer of alumina sol formed by hydrolyzing an alcoholate or a chelate of aluminum, with subsequent drying and burning thereof, impregnating the resulting burnt body with a solution of an alcoholate or a chelate of aluminum in an organic solvent and subjecting then the aluminum alcoholate or chelate soaked in the burnt body to hydrolysis in a heated steam to cause conversion thereof into alumina sol, immersing the so treated body in an aqueous solution of sodium silicate, followed by, a heat treatment thereof in steam, after the body has been removed from the solution repeating the foregoing procedures until the capillary pores in the substrate would have sufficiently been filled by the alumina sol, immersing the so treated body finally in an aqeous solution of sodium silicate, followed by, a further heat treatment thereof in a steam afte
    Type: Grant
    Filed: June 8, 1987
    Date of Patent: September 13, 1988
    Assignee: Mitsubishi Jukogyo Kabushiki Kaisha
    Inventors: Kazutaka Mori, Kikuji Tsuneyoshi
  • Patent number: 4764398
    Abstract: A method of depositing a heat reflecting coating on the inner surface of a tube comprises: introducing the tube into the second zone of a furnace having two temperature zones; injecting into the first zone a mixture of chemicals capable of reacting to form the coating material; simultaneously injecting into the first zone towards the second zone a plurality of jets of a carrier gas defining an annular array of jets around the first jet, and a further jet of a carrier gas also substantially parallel to the first jet but spaced closer thereto; controlling the temperature of the first zone to effect vaporization of the mixture in the first jet; and controlling the temperature of the second zone to effect the reaction of the vaporized materials of the mixture to form the coating material, and the deposition of the coating material on the surface of the tube in the second zone.
    Type: Grant
    Filed: April 2, 1986
    Date of Patent: August 16, 1988
    Assignee: Ramot University Authority for Applied Research and Industrial Development Ltd.
    Inventors: Natan Croitoru, Guy Deutscher, Enrique Gruenbaum
  • Patent number: 4762730
    Abstract: A method for producing a transparent protective coating on a plastic optical substrate surface is disclosed. In particular, a substrate is positioned between two electrodes on the cathode in a reaction chamber. Once positioned, a noble gas is introduced into the chamber and the surface of the plastic optical substrate is bombarded. A monomeric organic compound of either siloxane or silazane is introduced into the reaction chamber and a bias voltage of a value in the range of 80 to 500 volts is obtained to polymerize the compound on the substrate surface. Following the beginning of this polymerization, oxygen is introduced into the reaction chamber in an amount of about 5 times the amount of the monomeric organic compound to form a mixture with the compound.
    Type: Grant
    Filed: September 3, 1986
    Date of Patent: August 9, 1988
    Assignee: Leybold-Heraeus GmbH
    Inventors: Knut Enke, Walter Zultzke
  • Patent number: 4761308
    Abstract: A process for preparing reflective pyrolytic graphite by the chemical vapor deposition of graphite on a suitable support from methane or other short chain hydrocarbons at a suitable pressure and temperature followed by annealing the pyrolytic graphite at a temperature in excess of C. and pressure of 5 to 10 torr.
    Type: Grant
    Filed: June 22, 1987
    Date of Patent: August 2, 1988
    Assignee: General Electric Company
    Inventors: Joseph J. Gebhardt, Robert F. Mulvey, John J. Yodsnukis
  • Patent number: 4761300
    Abstract: Accurate metered amounts of Pnictide.sub.4 species are delivered via an argon carrier gas into an evacuated sputtering deposition chamber. The pnictide is maintained at a high temperature in a tall column by means of a constant temperature oil bath. An inert gas, such as argon, is passed through the column of Pnictide and the Pnictide.sub.4 enriched carrier gas delivered to the vacuum chamber. Films of pnictide, polypnictide, and other pnictide compounds may be deposited for semiconductor, thin film transistors, and other applications including insulation and passivation, particularly on III-V semiconductors. The local order of the deposited films may be controlled by varying the amount of energy delivered to the surface of the substrate, which is a function of its temperature, the RF power used, and the amount of excess P.sub.4 supplied. The pnictides used in the invention may include phosphorus, arsenic and antimony. Phosphorous and KP.sub.15, and KP.sub.x wherein x ranges from 15 to infinity are discussed.
    Type: Grant
    Filed: February 24, 1986
    Date of Patent: August 2, 1988
    Assignee: Stauffer Chemical Company
    Inventors: Rozalie Schachter, Marcello Viscogliosi
  • Patent number: 4759958
    Abstract: A method for forming a polyimide film on a substrate surface by chemical vapor deposition comprises evaporating an aromatic monomer compound having one amino group and two adjacent carboxyl groups or its derivative group, such as esters of 4-amino phthalic acid, and 4-(p-anilino) phthalic acid, thus a high strength polyimide is obtained represented by the general formula having its imide groups being unidirectionally arranged in its backbone chain: ##STR1## wherein R is nil or divalent aliphatic or aromatic group and n is an integer.
    Type: Grant
    Filed: July 23, 1987
    Date of Patent: July 26, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Shunichi Numata, Ikeda Takayoshi, Koji Fujisaki, Takao Miwa, Noriyuki Kinjo
  • Patent number: 4759947
    Abstract: A method for forming a deposition film comprises introducing, into a film forming chamber for forming a deposition film on a substrate, a silicon compound as a material for film formation and an active species generated from a compound containing carbon and halogen and capable of chemical interaction with said silicon compound, and applying thereto at least an energy selected from optical, thermal and discharge energies to excite said silicon compound and to cause a reaction thereof, thus forming a deposition film on said substrate.
    Type: Grant
    Filed: October 7, 1985
    Date of Patent: July 26, 1988
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shunichi Ishihara, Masaaki Hirooka, Shigeru Ohno
  • Patent number: 4759950
    Abstract: A method for metallizing a filament, wherein the filament is initially coated with a sol gel dispersion of polysilicate, titania, or alumina, and after drying at elevated temperature to form a porous interlayer coating on the filament, a nickel coating is deposited thereon from gaseous nickel carbonyl in a metallizing zone. The gaseous nickel carbonyl is produced in a fluidized bed of particulate nickel through which carbon monoxide make-up and at least a portion of the effluent gases discharged from the metallizing zone are flowed. The resulting nickel coated filament may be cut into fibers for use as a reinforcement in composite materials such as those utilized in electromagnetic inteference (EMI) shielding applications.
    Type: Grant
    Filed: September 26, 1986
    Date of Patent: July 26, 1988
    Assignee: Advance Technology Materials, Inc.
    Inventor: Ward C. Stevens
  • Patent number: 4758451
    Abstract: A process for producing a coated molded body according to the CVD process, in which at least one layer of hard material, consisting of carbides, nitrides and/or carbonitrides of the elements titanium, zirconium, hafnium, niobium and/or tantalum is deposited on a metallic substrate from a reactive gas phase. The gas phase contains aluminium trichloride, aluminium tribromide or magnesium chloride in a molar ratio of from 0.1:1 to 5:1, with respect to the halide of titanium, zirconium, hafnium, niobium and/or tantalum which is in the gas phase.
    Type: Grant
    Filed: December 19, 1986
    Date of Patent: July 19, 1988
    Assignee: Fried. Krupp GmbH
    Inventors: Henk van den berg, Udo Konig, Norbert Reiter
  • Patent number: 4756772
    Abstract: Aluminum articles having porous anodic oxide films are given an exposure-resistant blue coloration by dipping them first in an aqueous solution of a phosphomolybdic acid or a silicomolybdic acid, and then in a solution of a strong reducing agent such as a stannous salt, and finally sealing the porous oxide film. The method is suitable for batch or continuous operation and useful to color bumpers for passenger cars.
    Type: Grant
    Filed: October 24, 1984
    Date of Patent: July 12, 1988
    Assignee: Alcan International Limited
    Inventors: Jose L. Gazapo, Dan Fern