Abstract: A fabrication technique is described for making various devices in which a type of glass is used as a surface protection layer. The glass layers are put down by particle bombardment (generally sputtering or e-beam bombardment) of a phosphorus-containing silicate glass target. Devices with such layers are also described. Such glass layers are highly advantageous as encapsulating material, diffusion barrier layers, etc., particularly for optical type devices and certain semiconductor devices. Particularly important is the preparation procedure for the glass target used in the bombardment process. The glass layers are moisture stable, act as excellent barriers against diffusion, and are usable up to quite high temperatures without cracking or peeling. The glass layers also provide long-term protection against atmosphere components including water vapor, oxygen, atmosphere pollution contaminants, etc.

Abstract: A tubular metal object is rotated about its longitudinal axis and a layer of tape and synthetic thermosetting resin is wrapped around the object at room temperature. The object is inductively heated substantially uniformly through its thickness a plurality of times progressively from one end to the other subsequent to the wrapping to a temperature sufficient to allow the resin to flow on the outer surface of the object. The object is further inductively heated to a temperature at which the resin will cure, and the object is then cooled to room temperature.

Abstract: In an isotope separation system in which hot, isotopically separated vapor is deposited on enriched product and depleted tails plates, deposit adherence is improved and plate cooling simplified. The tails plate is liquid-cooled to a lower temperature which permits the product plate to be radiatively cooled by it simplifying product plate cooling and lowering its temperature to reduce the tendency for the product plate deposit to separate during temperature cycling. In one embodiment plate surfaces are cleaned of impurities in a vacuum by allowing the temperature of the tails plates to reach the relatively low operating temperature prior to proceeding with the deposition. In another embodiment plate surfaces are provided with rough surfaces to promote air penetration during deposit stripping, which permits the formation of a brittle, more easily severed bond between plate and deposit.

Abstract: Infra red reflecting fluorine-containing tin oxide coatings are applied to glass using a solid chlorine-containing volatile inorganic tin (IV) compound optionally containing fluorine. The inorganic tin (IV) compound is suspended in carrier gas. When that compound is fluorine free, the suspension is directed on to the hot glass surface in the presence of a separate source of fluorine which may be an organic tin compound. When the inorganic tin (IV) compound contains fluorine, the suspension is directed on to the hot glass surface in the presence of an organic tin compound which may contain fluorine. Examples of the inorganic tin (IV) compounds which may be used are ammonium hexahalostannates of the formula (NH.sub.4).sub.2 SnHal.sub.6 wherein Hal represents halogen, being either chlorine, or a minor atomic proportion of fluorine and the balance chlorine.

Abstract: The disclosure teaches a method of simulating natural desert varnish (that requires at least decades to produce by nature) within a few days. The method is broadly exemplified by the steps of applying a strong base followed by application of a soluble iron or manganese salt. Optionally, sodium hypochlorite may be applied as an additional step after the metallic salt application to speed up the process. The resulting product is difficult to distinguish from the natural varnish.

Abstract: Disclosed herein is a method for preparing a homogenized mixture of fine powders of heterogeneous substances or of fine powder and a fibrous component or whiskers, for use as a starting material in the production of a composite metallic material or a composite ceramic material. The invention utilizes chemical vapor deposition which ensures extremely high permeation into narrow spaces in producing whiskers or fine particles, the reaction product of the chemical vapor deposition, in the gaps between individual particles of fine powder or forming coated layers of the reaction product on the surfaces of powder particles to obtain a homogenized mixture of the fine powder and the reaction product.

Abstract: Multilayer protective coatings that are applied over a substrate that comprise a plurality of superimposed multilayer units and methods of making the coatings are disclosed. Each multilayer unit contains two or more superimposed thin layers in which at least two layers are compositionally different. The properties of the resulting coating are a combination of the properties of the individual layers. One layer of a multilayer unit may provide hardness or wear resistance and another layer may provide lubricity, for example. The thickness of the individual layers can be related to the microscopic surface relief of the substrate to which the protective coating is applied. One disclosed multilayer unit comprises three layers: an oxidation resistant layer; a nitride layer; and a layer of disordered boron and carbon material.A method of making the multilayer coatings is provided that includes depositing over a substrate a plurality of superimposed multilayer units.

Abstract: An improvement in a process for the production of semiconductor materials from the vapor decomposition of a precursor compound of the desired semiconductor material and the deposition of the desired semiconductor material. The improvement comprises the heating of the exterior surface of a metallic enclosure of a reactor to facilitate preheating thin rods of the semiconductor material, the rods supplying the heat for decomposition and acting as a substrate for deposition, to a temperature of about 250.degree. C. to render the thin rods conductive enough to effectively pass an electric current.

Abstract: An anti-reflection coating for an infrared transmitting material, which is stable to water or moisture and free from deterioration of the performances for a long period of time, can be provided. This anti-reflection coating comprises an inner layer of an alkali metal halide and an outer layer, provided thereon, of an infrared transmitting material, the inner layer and outer layer being provided on a substrate of an infrared transmitting material and having refractive indexes in the range of shaded portion in FIG. 2, said refractive indexes of the inner and outer layer being based upon the refractive index n of the infrared transmitting substrate.

Abstract: A technique is described for increasing the adhesion between metals and organic substrates, where the metals are those which normally only very weakly bond to the substrate. These metals include Ni, Cu, Al, Ag, Au, Ta, Pt, Ir, Rh, Pd, Zn, and Cd. The organic substrates include mylar, polyimides, polyesters, polyethylene, polystyrene, etc. Enhanced adhesion occurs when intermixing between the depositing metal atoms and the substrate is optimized to a depth less than about 1000 angstroms into the substrate. This occurs in a critical substrate temperature range of about (0.6-0.8) T.sub.c, where T.sub.c is the curing temperature of the substrate. The deposition rate of the metal atoms is chosen such that the arrival rate of the metal atoms at the surface of the substrate is comparable to or less than the rate of diffusion of metal atoms into the substrate. This provides optimum intermixing and maximum adhesion.

Abstract: Thermal CVD process for forming Si.sub.3 N.sub.4 -type films on substrates by reaction of gaseous NF.sub.3 with gaseous disilane at a temperature in the range of 250.degree.-500.degree. C., at pressures of 0.1-10 Torr. The mole ratio of NF.sub.3 to silane is in the range of 0.5-3.0 and the reaction zone is preferably isothermal (T controlled to within .sup.+ 5.degree. C.). The resulting films have RI's in the range of 1.4 to 3.0. The process parameters can be controlled to dope the film with H and/or F, or to create zones of differing properties within the film. The process does not cause radiation damage, metal migration, stored charge dissipation or high levels of impurities. Control of distance between adjacent wafers and wafer-to-wall spacing combined with laminar gas flow gives excellent film thickness uniformity, on the order of below about .+-.5% across the wafer face, both within (across) wafers and from wafer to wafer (batch uniformity).

Abstract: A method for determining the presence, during deposition of a first thin m layer, of a substance which escapes when the layer is cooled and transferred from its deposition environment for analysis to determine the presence of the substance. The layer is first covered with a second layer of a material which captures the escaping substance. This second layer is then covered with a cap layer of a substance which seals the second layer against contamination, as from the atmosphere during transfer. The layered structure, with the escaped substance retained in the second layer, is then analyzed, as by sputter depth profiling and Auger electron spectroscopy, to determine the presence in the second layer of the escaped substance and thus determine the presence of this substance during deposition of the first layer.

Abstract: A permeable tube is inserted in a processing gas line to allow impurities surrounding the permeable tube to enter the processing line. By plumbing a steel tube in parallel with the permeable tube the process carrier gas can be switched from one tube to the other in rapid succession to allow pure or impure gases to enter into a reaction chamber. This can permit the growth of alternating layers of differently doped materials. As an example, it has been discovered that incorportaing small amounts of oxygen into an AlGaAs layer will produce a semi-insulating layer.

Abstract: A method for forming a uniform layer of a material from a vapor phase onto the surface of an object at a high rate of deposition includes a heated reservoir for vaporizing the material to be deposited, a reactor containing the objects to be coated, and a vacuum device for flowing the gaseous material from the reservoir to the reactor. The mass flow rate of the gas from the reservoir is held constant by precisely controlling the pressure at the outlet of the reservoir and at the inlet of the reactor. In one embodiment the upstream pressure is controlled by a valve responsive to a pressure sensor at the reservoir outlet, and the downstream pressure is controlled by adjusting the vacuum in the reactor as measured by a pressure sensor at the reactor inlet.

Abstract: Solvent-free alkyl trialkoxy-silanes whose alkyl groups have 2 to 8 carbon atoms and whose alkoxy groups have 1 or 2 carbon atoms are used for the in-depth hydrophobic impregnation of concrete. Propyl and isobutyl trialkoxy-silanes display an especially deeply penetrating hydrophobizing action which is greater than that of solutions of these silanes.

Abstract: Chemical vapor deposition of an aluminum layer on a substrate is facilitated by surface activation prior to deposition. Surface activation is at relatively low temperature and results in a hydrated surface; low temperature surface activation is advantageous in the interest of keeping deposition apparatus free of additional chemicals, and substrates activated in this manner may be stored for considerable lengths of time prior to aluminum deposition. Among suitable activating agents are organochromium, organosilane, and organoaluminum compounds.

Abstract: A method is described for depositing gold onto a target surface using volatile organogold(I) and organogold(III) complexes. The method requires the vaporization of the organogold complex under high vacuum and moderate temperature and introduction of the vaporized complex into contact with the target surface heated to a temperature at or above the decomposition temperature for the complex, so that the complex decomposes upon contacting the surface thereby depositing gold thereon. A number of new organogold complexes are described for use in the method.

Abstract: A silicon diffusion coating is formed in the surface of a metal article by exposing the metal article to a reducing atmosphere followed by treatment in an atmosphere of 1 ppm to 100% by volume silane, balance hydrogen or hydrogen inert gas mixture. Hydrogen with a controlled dew point is utilized as a surface preparation agent and diluent for the silane.

Abstract: A chemical vapor deposition method for the production of a composite body with one or more polycrystalline diamond layers, essentially free of intercrystalline binder phase, on a substrate of one of: (a) metalbonded hardmaterial compound; (b) ceramic material; or (c) a metal or an alloy, whereby the heated substrate is contacted with a gaseous mixture of hydrocarbon or hydrogen, which mixture has been activated by passing it over a tantalum heater heated to a temperature of 1500.degree.-2500.degree. C.Also disclosed is the use of the compound body in tools subjected to mechanical operations.

Abstract: The invention concerns a method for firing enamel on steel parts, especially on steel sheet of aluminum stabilized continuous cast steel material, as well as an enameling oven with a firing zone and an entry zone serving as a prewarming zone for the carrying out of this process. The invention is characterized in that the heating of the steel part or steel sheet to the firing temperature is interrupted before reaching the firing temperature, in that hydrogen dissolved in the steel is released during the interruption time, that the steel part subsequently is heated further to the firing temperature, is held at this temperature and is then cooled in a known way. The enameling oven for carrying out the method consists according to the invention of a degasing zone inserted between the firing zone and the prewarming zone, in which degasing zone the workpiece coated with enamel is held for a given minimum time at a definite temperature.