Patents Examined by Sadie L. Childs
  • Patent number: 4755399
    Abstract: A process for producing a cutting tool having a rake face and flank face which intersect to form a cutting edge, which cutting tool comprises a substrate consisting of a sintered hard metal and a coating film provided thereon consisting of a material with a higher hardness than the substrate, which method involves subjecting the substrate to a coating treatment and honing treatment in such a manner that the coating film near the cutting edge has such a thickness that the thickness continuously increases in directions away from the cutting edge along both the rake face and the flank face from a minimum value, including zero, at the cutting edge, such that the thickness of the coating at the rake face reaches a maximum thickness at a first distance from the cutting edge and the thickness at the flank face reaches a maximum thickness at a second distance from the cutting edge, wherein the first distance is greater than the second distance.
    Type: Grant
    Filed: October 17, 1986
    Date of Patent: July 5, 1988
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hiroshi Fujii, Akio Hara, Mitsunori Kobayashi, Yoshikatsu Mori
  • Patent number: 4752503
    Abstract: A thin, refractory, intermediate adhesive layer of laminar structure is deposited in oriented fashion on the reinforcing fibers by chemical vapor deposition, this intermediate layer having a greater elongation at break than the matrix and having a thickness of between 0.2 and 3 micrometers; the material forming the intermediate layer can be laminar pyrocarbon or boron nitride; the ceramic matrix is then infiltered, preferably by chemical vapor deposition, inside the pores of the reinforcement.
    Type: Grant
    Filed: July 18, 1985
    Date of Patent: June 21, 1988
    Assignee: Societe Europeenne de Propulsion
    Inventor: Jacques Thebault
  • Patent number: 4752504
    Abstract: A process continuously deposits a carbonaceous film, by chemical vapor deposition, onto a moving longitudinally extending web of a plurality of matted or woven fibers, a plurality of parallel individual fibers, or a bundle of fibers, of a refractory ceramic or refractory vitreous material. The result is a coated web having a controllable resistance along its length and a substantially uniform resistance across its breadth. An organic precursor is directly applied to the web in liquid and/or solid form, the applying being at a temperature below sublimation, boiling or decomposition temperature of the precursor. The web is continuously moved through a hot chemical vapor deposition zone at a temperature of 800.degree. C-1200.degree. C., the zone being substantially oxygen-free, the residence time of each portion of the web within the zone being less than that which would deleteriously effect the properties of the resulting carbonaceous film coated web.
    Type: Grant
    Filed: December 18, 1985
    Date of Patent: June 21, 1988
    Assignee: Northrop Corporation
    Inventor: Steven F. Rickborn
  • Patent number: 4751149
    Abstract: Zinc oxide is applied to a substrate at a low temperature by using a mixture of an organozinc compound and water carried in an inert gas. The resulting zinc oxide film has a relatively low resistivity which can be varied by addition of a group III element.
    Type: Grant
    Filed: March 12, 1987
    Date of Patent: June 14, 1988
    Assignee: Atlantic Richfield Company
    Inventors: Pantham S. Vijayakumar, Kimberly A. Blaker, Robert D. Wieting, Boon Wong, Arvind T. Halani
  • Patent number: 4751109
    Abstract: A process for producing a wear resistant article, such as a cutting tool. Gaseous halides of two or more of aluminum, zirconium, and yttrium with other reactants are passed over a hard ceramic substrate at 900.degree.-1500.degree. C., and at 1 torr to about ambient pressure to form a composite ceramic coating on the substrate. The coating is a continuous first-phase metal oxide matrix having particles of at least one different metal oxide dispersed therein. In a preferred process, one or more of the metal halides is pulsed into the gaseous mixture containing a different metal halide, to control the deposition of the particles.
    Type: Grant
    Filed: January 20, 1987
    Date of Patent: June 14, 1988
    Assignee: GTE Laboratories Incorporated
    Inventors: Vinod K. Sarin, Hans E. Hintermann, Gilbert Gindraux
  • Patent number: 4749587
    Abstract: In the previously used methods for the deposition of layers on surfaces by means of chemical reactions with gases, which are introduced into the reaction room or chamber (chemical vapor deposition, CVD), electrical glow discharge and mainly high-frequency discharges were used for the activation of the reactants. According to the invention, the maintaining of a low-voltage arc discharge in the reaction room during the coating is recommended. The surprising result of this is a considerably stronger activation and ionization and a more uniform coating also on surfaces of complex shape.
    Type: Grant
    Filed: June 19, 1986
    Date of Patent: June 7, 1988
    Assignee: Balzers Aktiengesellschaft
    Inventors: Erich Bergmann, Elmar Hummer
  • Patent number: 4749597
    Abstract: A process is disclosed for reducing lateral encroachment and silicon consumption in LPCVD of tungsten. The process comprises a low temperature deposition of a thin layer of tungsten, followed by annealing in nitrogen at high temperature, follows by deposition of a thick layer of tungsten.
    Type: Grant
    Filed: October 19, 1987
    Date of Patent: June 7, 1988
    Assignee: Spectrum CVD, Inc.
    Inventors: John Mendonca, J. B. Price, Richard S. Rosler
  • Patent number: 4747368
    Abstract: A chemical vapor deposition apparatus for depositing films or coatings on semiconductor substrates. Substrates are supported within an air tight reactor and heated to a predetermined reaction temperature. A manifold disposed within the reactor, and having a plurality of openings therein, receives one or more reactive vapors and evenly distributes the vapors through the openings in the vicinity of the substrates, such that the vapors react at the substrate surfaces and a film or coating is deposited thereon. One or more cooling tubes substantially envelope the manifold, thereby maintaining the manifold at a temperature less than at least the reaction temperature such that the vapors do not prematurely react within the manifold. Hence, films and coatings are prevented from forming within the manifold, and sufficient unreacted vapors are supplied to the substrate to effect a satisfactory coating or film thereon.
    Type: Grant
    Filed: April 6, 1987
    Date of Patent: May 31, 1988
    Assignee: Mitel Corp.
    Inventors: Guy Brien, Richard Cloutier, Edward C. D. Darwall, Laszlo Szolgyemy
  • Patent number: 4746537
    Abstract: A method of applying .gamma.-alumina to a porous ceramics structure includes the steps of: causing fine particles of .gamma.-alumina together with a carrier gas to flow through pores in the porous ceramics structure so as to deposit the .gamma.-alumina fine particles on the surfaces of the skeleton of the porous ceramics structure, and heating the structure with the .gamma.-aluminum particles deposited thereto to a predetermined temperature thereby fixing the .gamma.-alumina particles. The fine particles of .gamma.-alumina are formed by causing an arc discharge between the surface of molten aluminum and an aluminum electrode so as to generate vapor of aluminum, and oxidizing the aluminum vapor by an oxidizing gas which may be Ar-O.sub.2 carrier gas which is made to flow through the pores in the porous ceramics structure.
    Type: Grant
    Filed: July 13, 1987
    Date of Patent: May 24, 1988
    Assignee: Nippondenso Co., Ltd.
    Inventors: Akira Takeuchi, Yukihisa Takeuchi, Hitoshi Yoshida
  • Patent number: 4746549
    Abstract: In a method for forming a thin film of a refractory metal on a substrate having a silicon layer and an insulating layer on a surface thereof, a halogen compound of the refractory metal is mixed with hydrogen gas for providing a material gas, hydrogen halide gas or a halogen gas consisting of a second halogen less electronegative than the first halogen forming the halogen compound of the refractory metal is added to the material gas, and by use of the thus obtained mixed gas, vapor phase deposition refractory metal is effected selectively on the surface of the silicon layer of the substrate.
    Type: Grant
    Filed: January 15, 1987
    Date of Patent: May 24, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hitoshi Ito, Takahiko Moriya
  • Patent number: 4746544
    Abstract: In repairing a rupture or opening as described herein the rupture or opening and the adjacent area of the surface in which the rupture or opening occurs is covered by a layer of an alpha-cyanoacrylate which is liquid at 20.degree. C. and has the formula CH.sub.2 .dbd.C(CN)--COOR wherein R is a hydrocarbon radical selected from the group consisting of aliphatic, aromatic and cycloaliphatic hydrocarbon groups of 1-10 carbon atoms and alkoxy, chloro and fluoro derivatives of said hydrocarbon groups in which alkoxy groups there are 1-4 carbon atoms therein; and spreading on the said layer of alpha-cyanoacrylate a layer of a powder comprising rubber.
    Type: Grant
    Filed: January 2, 1987
    Date of Patent: May 24, 1988
    Assignee: Renbec International Corp.
    Inventor: Thieo E. Hogen-Esch
  • Patent number: 4746548
    Abstract: A method of aligning thin-film structure patterns on a substrate formed with the use of an apertured mask in a vacuum deposition system.
    Type: Grant
    Filed: October 23, 1985
    Date of Patent: May 24, 1988
    Assignee: GTE Products Corporation
    Inventors: Robert A. Boudreau, Robert J. Wilkie
  • Patent number: 4745007
    Abstract: A process for forming a smooth, continuous coating of silicon carbide upon antalum carbide is disclosed, as are several useful manufacturers produced with the process. A tantalum carbide substrate may be formed directly upon metallic tantulum articles by disclosed means. The material formed with this process has been used to fabricate semiconducting devices including light emitting diodes and selective thermal radiators which can be operate at 1200 degrees C. The method is further useful for producing tantalum metal incandescent light filaments and corrosion resistant tantalum articles.
    Type: Grant
    Filed: August 29, 1985
    Date of Patent: May 17, 1988
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Arrigo Addamiano, Philipp H. Klein
  • Patent number: 4745010
    Abstract: A process for producing a wear resistant article, such as a cutting tool. Gaseous halides of two or more of aluminum, zirconium, and yttrium with other reactants are passed over a cemented carbide substrate at 900.degree.-1250.degree. C. and 1 torr to about ambient pressure to form a composite ceramic coating on the substrate. The coating is a continuous first-phase metal oxide matrix having particles of at least one different metal oxide dispersed therein. In a preferred process, one or more of the metal halides is pulsed into the gaseous mixture containing a different metal halide to control the deposition of the particles.
    Type: Grant
    Filed: January 20, 1987
    Date of Patent: May 17, 1988
    Assignee: GTE Laboratories Incorporated
    Inventors: Vinod K. Sarin, Hans E. Hintermann, Gilbert Gindraux
  • Patent number: 4743468
    Abstract: In repairing a rupture as described herein the rupture is covered by a patch of metal or plastic sheet material which covers the rupture at least 1/2 inch beyond the rupture, then applying over the edge of the patch a layer of an alpha-cyanoacrylate which is liquid at 20.degree. C. and has the formula CH.sub.2 .dbd.
    Type: Grant
    Filed: February 4, 1987
    Date of Patent: May 10, 1988
    Assignee: Renbec International Corp.
    Inventor: Rene C. Jimenez
  • Patent number: 4741928
    Abstract: A method and heating apparatus are provided for selectively depositing metal films, such as tungsten, on the metal and semi-conductor surfaces of a silicon wafer by chemical vapor deposition. The method and heating apparatus serve to isolate the depositing surface of silicon wafers from both infrared radiation and the nucleating species which are vaporized by hot surfaces within the reaction chamber by means of a barrier which reflects or absorbs infrared radiation and condenses vaporized nucleating species before a nucleate metal deposition sites on metal or semiconductor surfaces.
    Type: Grant
    Filed: April 10, 1987
    Date of Patent: May 3, 1988
    Assignee: General Electric Company
    Inventors: Ronald H. Wilson, Robert W. Stoll, Herbert R. Philipp
  • Patent number: 4738873
    Abstract: The method allows the production of silica and dopant with reactions among gaseous chemical compounds. The optical fibers produced do not present dip and exhibit low attenuation. Carbon dioxide is used as the oxidizer and organometallic aluminum compounds are used to obtain the dopant; silica is obtained from organometallic silicon compounds or silicon tetrachloride.
    Type: Grant
    Filed: March 28, 1986
    Date of Patent: April 19, 1988
    Assignee: Cselt - Centro Studi e Laboratori Telecomunicazioni SpA
    Inventors: Giacomo Roba, Giuseppe Parisi
  • Patent number: 4735826
    Abstract: The method of surfacing the heater of a furnace for optical fiber drawing allows elimination of defects in the inner heater surface, which defects give rise to particle emission towards the preform. This is achieved by depositing a thin layer of a mixture of oxides compatible with the material composing the heater.
    Type: Grant
    Filed: February 6, 1986
    Date of Patent: April 5, 1988
    Assignee: Cselt-Centro Studi e Laboratori Telecomunicazioni S.p.A.
    Inventor: Giacomo Roba
  • Patent number: 4735856
    Abstract: A method for hermetically sealing a silica based fiber product after the fiber product has been drawn from a melt or preform wherein a hermetic layer of boron carbide or a ceramic compound having a density of above about 4 g/cc is deposited upon the fiber product. The fiber product can be initially coated with carbon or boron carbide prior to the application of the ceramic compound. Also, a method for making such fiber products using these methods, and the resultant hermetically sealed fiber products produced thereby.
    Type: Grant
    Filed: March 31, 1986
    Date of Patent: April 5, 1988
    Assignee: SpecTran Corporation
    Inventors: Peter C. Schultz, Satyabrata Raychaudhuri
  • Patent number: 4734297
    Abstract: Shaped articles, e.g., bars, of semiconductor-grade, ultra-pure silicon, are facilely and efficiently produced by thermally decomposing/pyrolyzing a monosilane feedstream on a red-heated silicon support member, whereby high purity silicon is deposited thereon, and then recycling the majority of the by-product reaction admixture into said monosilane feedstream.
    Type: Grant
    Filed: October 30, 1985
    Date of Patent: March 29, 1988
    Assignee: Rhone-Poulenc Specialites Chimiques
    Inventors: Serge Jacubert, Bernard Boudot, Philippe Nataf