Patents Examined by Samuel S Outten
  • Patent number: 11368135
    Abstract: A high-frequency module (10) includes a laminated substrate formed by laminating a plurality of insulator layers, a first terminal (P1) and a second terminal (P2) provided on the laminated substrate, a filter (20) connected between the first terminal (P1) and the second terminal (P2), a matching circuit (40) connected between the first terminal (P1) and the filter (20), and an inductor (60) provided as a conductor pattern in or on the laminated substrate, and connected between the filter (20) and the ground. The matching circuit (40) includes a mounting circuit unit (41) provided as an individual component on the laminated substrate, and a layer circuit (42) provided as a conductor pattern in or on the laminated substrate. A layer circuit unit (42) is electromagnetically coupled to the inductor (60).
    Type: Grant
    Filed: March 9, 2020
    Date of Patent: June 21, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Takanori Ito
  • Patent number: 11369020
    Abstract: A stacked, multi-layer transmission line is provided. The stacked transmission line includes at least a pair of conductive traces, each conductive trace having a plurality of conductive stubs electrically coupled thereto. The stubs are disposed in one or more separate spatial layers from the conductive traces.
    Type: Grant
    Filed: October 26, 2018
    Date of Patent: June 21, 2022
    Assignee: Invensas LLC
    Inventors: Shaowu Huang, Javier A. Delacruz, Belgacem Haba
  • Patent number: 11368139
    Abstract: An acoustic resonator device includes a conductor pattern formed on a surface of a piezoelectric plate. The conductor pattern includes a first busbar, a second busbar, and n interleaved parallel fingers of an interdigital transducer (IDT), where n is a positive integer. The fingers extend alternately from the first and second busbars. A first finger and an n'th finger are at opposing ends of the IDT. The conductor pattern also includes a first reflector element proximate and parallel to the first finger and a second reflector element proximate and parallel to the n'th finger. A center-to-center distance pr between the first reflector element and the first finger and between the second reflector element and the n'th finger is greater than or equal to 1.2 times a pitch p of the IDT and less than or equal to 1.5 times the pitch p.
    Type: Grant
    Filed: August 28, 2021
    Date of Patent: June 21, 2022
    Assignee: Resonant Inc.
    Inventor: Bryant Garcia
  • Patent number: 11362639
    Abstract: An acoustic wave device includes a substrate 3, a multilayer film 5 on the substrate 3, an LT layer 7 which is located on the multilayer film and is configured by a single crystal of LiTaO3, and an IDT electrode 19 on the LT layer 7. In the multilayer film 7, a differential value D obtained by subtracting a total value of values each obtained by multiplying a density and thickness of a film having a slower acoustic velocity than a transverse wave acoustic velocity of the LT layer 7 from a total value of values each obtained by multiplying a density and thickness of a film having a faster acoustic velocity than the transverse wave acoustic velocity of the LT layer 7 is negative, and a thickness of the LT layer 7 is less than 2p where a pitch of electrode fingers in the IDT electrode 19 is ā€œpā€.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: June 14, 2022
    Assignee: KYOCERA Corporation
    Inventors: Motoki Ito, Tetsuya Kishino
  • Patent number: 11355828
    Abstract: A microwave or radio frequency (RF) device includes a substrate including an electrically insulating material. The substrate has a first surface and a second surface parallel to the first surface. The device further includes a RF component disposed over the first surface of the substrate. The device also includes a conductive layer disposed over the second surface of the substrate, the conductive layer forming a ground plane electrically insulated from the RF component. The device further includes a defected ground structure disposed on a surface of the substrate that is coplanar with the first surface, where the defected ground structure is electrically connected to the conductive layer, and where the defected ground structure includes a plurality of laterally extending members adjacent to the RF component and extending laterally in relation to the RF component.
    Type: Grant
    Filed: April 30, 2020
    Date of Patent: June 7, 2022
    Assignee: Knowles Cazenovia, Inc.
    Inventor: Gregory Alton
  • Patent number: 11343905
    Abstract: One embodiment can provide a method and system for compensating for timing skew in a differential pair transmission line on a printed circuit board (PCB). During operation, the system obtains a PCB comprising one or more layers and at least a differential pair transmission line. The differential pair transmission line comprises first and second transmission lines, with a respective transmission line coupled to at least one via extending through the one or more layers of the PCB. The system determines a difference in length between first and second transmission lines and determines a stub length of the at least one via based on the determined difference in length between the first and second transmission lines, thereby compensating for the time skew in the differential pair transmission line.
    Type: Grant
    Filed: February 28, 2020
    Date of Patent: May 24, 2022
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Hyunjun Kim, Andrew J. Becker, Paul T. Wildes
  • Patent number: 11342160
    Abstract: In one embodiment, an RF impedance matching network for a plasma chamber is disclosed. The matching network includes an electronically variable capacitor (EVC) comprising discrete capacitors, each discrete capacitor having a corresponding switching circuit for switching in and out the discrete capacitor to alter a total capacitance of the EVC. Each switching circuit includes a diode operably coupled to the discrete capacitor to cause the switching in and out of the discrete capacitor, and a filter circuit parallel to the diode, the filter comprising a filtering capacitor in series with an inductor.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: May 24, 2022
    Inventors: Michael Gilliam Ulrich, Ronald Anthony Decker
  • Patent number: 11342161
    Abstract: In one embodiment, an RF impedance matching network for a plasma chamber is disclosed. The matching network includes an electronically variable capacitor (EVC) comprising discrete capacitors, each discrete capacitor having a corresponding switching circuit for switching in and out the discrete capacitor to alter a total capacitance of the EVC. Each switching circuit comprises at least one switching field-effect transistor (FET) operably coupled to the corresponding discrete capacitor to cause the switching in and out of the discrete capacitor. For each switching circuit, when the switching circuit is switched OFF to switch out the corresponding discrete capacitor, the at least one switching FET receives a bias voltage from a bias voltage source to reduce a capacitance variability of the at least one switching FET.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: May 24, 2022
    Inventor: Michael Gilliam Ulrich
  • Patent number: 11335540
    Abstract: In one embodiment, an impedance matching network includes a mechanically variable capacitor (MVC), a second variable capacitor, and a control circuit. The control circuit carries out a first process of determining a second variable capacitor configuration for reducing a reflected power at the RF source output, and altering the second variable capacitor to the second variable capacitor configuration. The control circuit also carries out a second process of determining an RF source frequency, and, upon determining that the RF source frequency is outside, at a minimum, or at a maximum of a predetermined frequency range, determining a new MVC configuration to cause the RF source frequency, according to an RF source frequency tuning process, to be altered to be within or closer to the predetermined frequency range. The determination of the new MVC configuration is based on the RF source frequency and the predetermined frequency range.
    Type: Grant
    Filed: January 31, 2020
    Date of Patent: May 17, 2022
    Inventors: Imran Bhutta, Michael Ulrich
  • Patent number: 11336253
    Abstract: An amplifier circuit includes a first port, a second port, a reference potential port, and an RF amplifier device having a first terminal electrically coupled to the first port, a second terminal electrically coupled to the second port, and a reference potential terminal electrically coupled to the reference potential port. The RF amplifier device amplifies an RF signal across an RF frequency range that includes a fundamental RF frequency. An impedance matching network is electrically coupled to the first terminal and the first port. The impedance matching network includes a baseband termination circuit that presents low impedance in a baseband frequency region, a fundamental frequency matching circuit that presents a complex conjugate of an intrinsic impedance of the RF amplifier device in the RF frequency range, and a second order harmonic termination circuit that presents low impedance at second order harmonics of frequencies in the fundamental RF frequency range.
    Type: Grant
    Filed: November 27, 2017
    Date of Patent: May 17, 2022
    Assignee: Wolfspeed, Inc.
    Inventors: Bayaner Arigong, Haedong Jang, Richard Wilson, Frank Trang, Qianli Mu, E J Hashimoto
  • Patent number: 11329629
    Abstract: An acoustic wave device includes a piezoelectric substrate, a first band pass filter that is on the piezoelectric substrate and has a first pass band, and a second band pass filter that is on the piezoelectric substrate and has a second pass band at a higher frequency than the first pass band. The first and second band pass filters include resonators that include respective IDT electrodes. When a first total average metallization ratio is defined as an average of metallization ratios of all of the IDT electrodes included in the first filter and a second total average metallization ratio is defined as an average of metallization ratios of all of the IDT electrodes included in the second filter, the first total average metallization ratio is greater than the second total average metallization ratio.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: May 10, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Junpei Yasuda
  • Patent number: 11327101
    Abstract: An integrated manual pre-matching module for on-wafer load pull tuner operation uses a mobile rack and a rotating reflective probe, mounted and sliding on the tuner slabline extension. Both the tuning probe position and immersion into the slabline are controlled using sidewise mounted easily accessible knobs. The low profile of the module does not conflict with the microscope and allows integrating on the extended slabline of the tuner in immediate proximity of the wafer probe, thus minimizing any additional insertion loss and maximizing tuning range. Manual handling of the pre-matching tuning module is easy and efficient without disturbing the on-wafer load pull operations.
    Type: Grant
    Filed: January 17, 2019
    Date of Patent: May 10, 2022
    Inventor: Christos Tsironis
  • Patent number: 11323088
    Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 ???Mg?170 ? may be satisfied, ?Mg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.
    Type: Grant
    Filed: August 10, 2020
    Date of Patent: May 3, 2022
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Tae Kyung Lee, Tae Yoon Kim, Sang Kee Yoon, Chang Hyun Lim, Jong Woon Kim, Moon Chul Lee
  • Patent number: 11316497
    Abstract: Embodiments may relate to a die such as an acoustic wave resonator (AWR) die. The die may include a first filter and a second filter in the die body. The die may further include an electromagnetic interference (EMI) structure that surrounds at least one of the filters. Other embodiments may be described or claimed.
    Type: Grant
    Filed: December 9, 2019
    Date of Patent: April 26, 2022
    Assignee: Intel Corporation
    Inventors: Georgios Dogiamis, Aleksandar Aleksov, Feras Eid, Telesphor Kamgaing, Johanna M. Swan
  • Patent number: 11309868
    Abstract: A multiplexer includes: a first terminal; a second terminal; a third terminal; a first filter connected between the first and second terminals, including a first capacitor, a first inductor, and one or more first acoustic wave resonators, and having a first passband; a second filter connected between the first and third terminals, including a second capacitor, a second inductor, and one or more second acoustic wave resonators, and having a second passband higher than the first passband; a substrate having a surface on which at least one first acoustic wave resonator of the one or more first acoustic wave resonators and at least one second acoustic wave resonator of the one or more second acoustic wave resonators are located; and a metal structure located on the surface and located between the at least one first acoustic wave resonator and the at least one second acoustic wave resonator.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: April 19, 2022
    Assignee: TAIYO YUDEN CO., LTD.
    Inventor: Eiji Kuwahara
  • Patent number: 11309866
    Abstract: An acoustic wave device includes a first acoustic impedance layer and a second acoustic impedance layer, an IDT electrode, and an electrode. At least a portion of the IDT electrode overlaps the first acoustic impedance layer. At least a portion of the electrode overlaps the second acoustic impedance layer. In each of the first acoustic impedance layer and the second acoustic impedance layer, at least one of a high acoustic impedance layer and a low acoustic impedance layer is a conductive layer. A capacitor is formed by using the conductive layer of the second acoustic impedance layer and the electrode. The conductive layer in the first acoustic impedance layer is electrically insulated from the conductive layer in the second acoustic impedance layer.
    Type: Grant
    Filed: March 18, 2020
    Date of Patent: April 19, 2022
    Assignee: MURATA MANUFACTURING CO., LTD
    Inventor: Masashi Omura
  • Patent number: 11296420
    Abstract: A multiport RF switch assembly with integrated impedance tuning capability is described that provides a single RFIC solution to switch between transmit and receive paths in a communication system. Dynamic tuning is integrated into each switch sub-assembly to provide the capability to impedance match antennas or other components connected to the multiport switch. The tuning function at the switch can be used to shape the antenna response to provide better filtering at the switch/RF front-end (RFFE) interface to allow for reduced filtering requirements in the RFFE. Memory is designed into the multiport switch assembly, allowing for a look-up table or other data to reside with the switch and tuning circuit. The resident memory will result in easier integration of the tunable switch assembly into communication systems.
    Type: Grant
    Filed: January 3, 2020
    Date of Patent: April 5, 2022
    Assignee: KYOCERA AVX Components (San Diego), Inc.
    Inventors: Laurent Desclos, Olivier Pajona
  • Patent number: 11290080
    Abstract: A physical vapor deposition system may include an RF generator configured to transmit an AC process signal to a physical vapor deposition chamber via an RF matching network. A controller of the RF matching network is configured to receive the DC magnitude and phase error signals and to vary an impedance of the RF matching network in response to the DC magnitude and phase error signals. The matching network operates in a first mode until a tuning dead-zone is determined. Once a tuning dead-zone is determined, the matching network operates in additional modes until the network is tuned. The controller uses a composite value of magnitude and phase error to drive of the variable tuning and load capacitors.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: March 29, 2022
    Assignee: COMET TECHNOLOGIES USA, INC.
    Inventors: Liang Ouyang, Daniel Catalan, Anthony Oliveti
  • Patent number: 11271544
    Abstract: A multiplexer includes N acoustic wave filters each including one end connected in common and having a different pass band, in which when the N acoustic wave filters are in order from a side of a lower frequency of the pass band, at least one n-th acoustic wave filter among the N acoustic wave filters excluding an acoustic wave filter having the highest frequency of the pass band includes one or more acoustic wave resonators including a support substrate, a silicon nitride film laminated on the support substrate, a silicon oxide film laminated on the silicon nitride film, a piezoelectric body laminated on the silicon oxide film, and an IDT electrode provided on the piezoelectric body. All acoustic wave filters having a pass band in a higher frequency than a frequency of a pass band of the n-th acoustic wave filter satisfy fh1_t(n)>fu(m) or fh1_t(n)<fl(m).
    Type: Grant
    Filed: February 6, 2020
    Date of Patent: March 8, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Ryo Nakagawa, Shou Nagatomo, Hideki Iwamoto, Tsutomu Takai
  • Patent number: 11271530
    Abstract: A first transmission line and a second transmission line that are connected in series to each other are disposed at different positions in a thickness direction of a substrate. A third transmission line is disposed between the first transmission line and the second transmission line in the thickness direction of the substrate. The third transmission line includes a first end portion connected to one end portion of the first transmission line, and a second end portion that is AC-grounded. The first transmission line and the second transmission line are electromagnetically coupled to the third transmission line.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: March 8, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Masatoshi Hase