Abstract: An electronic component includes a substrate, a functional element on the substrate, a first electrode, a support body that is made of an insulator, a cover portion, a second electrode, and a projection. The first electrode is located on the substrate and connected to the functional element. The support body protrudes from the substrate and covers the first electrode. The cover portion opposes the substrate, and a hollow space is defined by the substrate, the support body, and the cover portion. The second electrode is located in a via hole extending through the support body and the cover portion and electrically connected to the first electrode. The projection is located on the first electrode in the via hole.

Abstract: A resonator comprising a piezoelectric film which creates an acoustic path that is slightly longer in a central region of the resonator than at an edge of the resonator.

Abstract: An acoustic wave element 1 according to the present disclosure includes a piezoelectric substrate 2 and an IDT electrode 3 on the piezoelectric substrate 2. The IDT electrode 3 includes a multilayer structure of a first layer 35 comprised of Al containing 10% or less of a sub-component and a second layer 37 comprised of a CuAl2 alloy. The second layer 37 enables the acoustic wave element 1 to have excellent electric power resistance.

Abstract: An acoustic wave device includes a substrate, one or more acoustic layers provided on the substrate, the one or more acoustic layers each being an air gap or an acoustic mirror, the acoustic mirror having a structure in which at least two layers having different acoustic characteristics are stacked, lower electrodes provided on the substrate, the lower electrodes sharing one acoustic layer of the one or more acoustic layers between the substrate and the lower electrodes, the lower electrodes being arranged to be separated from each other across a groove, an insulating film provided in the groove on the one acoustic layer, a piezoelectric film continuously provided on the lower electrodes and the groove, and an upper electrode continuously provided on the piezoelectric film to form resonators by sandwiching the piezoelectric film between the upper electrode and the lower electrodes.

Abstract: The invention relates to an acoustically coupled thin-film BAW filter, comprising a piezoelectric layer, an input-port on the piezoelectric layer changing electrical signal into an acoustic wave (SAW, BAW), and an output-port on the piezoelectric layer changing acoustic signal into electrical signal. In accordance with the invention the ports include electrodes positioned close to each other, and the filter is designed to operate in first order thickness-extensional TE1 mode.

Abstract: An acoustic wave device includes a piezoelectric layer, first and second upper electrodes, first and second lower electrodes, and first and second acoustic reflection films. In plan view, first and second resonator portions are respectively defined by portions where the first upper electrode and the first lower electrode overlap and where the second upper electrode and the second lower electrode overlap. The first and second acoustic reflection films respectively include first and second metal layers. First and second overlapping portions are respectively defined by portions where only the first upper electrode overlaps with the first metal layer and where only the second upper electrode overlaps with the second metal layer. An area of the first resonator portion is smaller than an area of the second resonator portion and an area of the first overlapping portion is larger than an area of the second overlapping portion.

Abstract: An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer (IDT) formed on the front surface of the plate has interleaved fingers disposed on the diaphragm, the overlapping distance of the interleaved fingers defining an aperture of the resonator device. Contact pads are formed at selected locations over the surface of the substrate to provide electrical connections between the IDT and contact bumps to be attached to the contact pads. The piezoelectric plate is removed from at least a portion of the surface area of the device beneath each of the contact pads to provide lower thermal resistance between the contact bumps and the substrate.

Abstract: A high-frequency circuit is configured so as to include a printed circuit board and a flexible circuit board connected to the printed circuit board, wherein the printed circuit board includes: a first dielectric layer having a first surface and a second surface, a first ground conductor being formed on the first surface; a second dielectric layer having a third surface and a fourth surface, a second ground conductor being formed on the fourth surface; and first signal lines wired between the second surface and the third surface, the flexible circuit board includes: a third dielectric layer having a fifth surface and a sixth surface, a third ground conductor being formed on the fifth surface; a fourth dielectric layer having a seventh surface and an eighth surface, a fourth ground conductor being formed on the eighth surface; and second signal lines wired between the sixth surface and the seventh surface.

Abstract: A cavity structure of a bulk acoustic resonator and a manufacturing process. The cavity structure comprises a substrate and a cavity formed on the substrate, a support layer is arranged on the substrate to form the cavity in a surrounding manner, a release channel in communication with the cavity is formed above the substrate in a same layer with the cavity, and the release channel extends, in parallel to the substrate, in a peripheral area of the cavity. There is no need to manufacture a release hole, which simplifies the manufacturing process of the resonator, thereby avoiding weakening the performance of the resonator due to damage to the structure of the piezoelectric layer around the electrode layer when manufacturing the release hole.

Abstract: A filter device with multiple piezoelectric plate thicknesses if fabricated on a single chip by bonding a piezoelectric plate to a surface of a substrate having swimming pool shunt and series cavities. Non-selected areas of the plate have a thickness for shunt resonators and form shunt membranes of the plate that span the swimming pool shunt cavities. Selected areas of a back surface of the plate have a thickness for series resonators and form series membranes of the plate that span the swimming pool series cavities but not the swimming pool shunt cavities. The thickness for series resonators is thinner than that for shunt resonators. Shunt interdigital transducers (IDTs) are on a front surface of the plate over the swimming pool shunt cavities; and series IDTs are on a front surface of the plate over the swimming pool series cavities.

Abstract: An acoustic wave device includes a substrate, one or more acoustic layers provided on the substrate, the one or more acoustic layers each being an air gap or an acoustic mirror, the acoustic mirror having a structure in which at least two layers having different acoustic characteristics are stacked, lower electrodes provided on the substrate, the lower electrodes sharing one acoustic layer of the one or more acoustic layers between the substrate and the lower electrodes, the lower electrodes being arranged to be separated from each other across a groove, an insulating film provided in the groove on the one acoustic layer, a piezoelectric film continuously provided on the lower electrodes and the groove, and an upper electrode continuously provided on the piezoelectric film to form resonators by sandwiching the piezoelectric film between the upper electrode and the lower electrodes.

Abstract: An acoustic wave device includes a substrate, a transmission filter formed on the substrate, a reception filter formed on the substrate, a transmission ground pad of the transmission filter, the transmission ground pad is formed on the substrate, and a reception ground pad of the reception filter, the reception ground pad is formed on the substrate. The transmission filter includes a plurality of series resonators and a plurality of parallel resonators. The plurality of parallel resonators includes a first parallel resonator electrically connected to the reception ground pad.

Abstract: Embodiments may relate to a die such as an acoustic wave resonator (AWR) die. The die may include a first filter and a second filter in the die body. The die may further include an electromagnetic interference (EMI) structure that surrounds at least one of the filters. Other embodiments may be described or claimed.

Abstract: An acoustic wave device includes a substrate, a multilayer film on the substrate, an LT layer which is located on the multilayer film and is configured by a single crystal of LiTaO3, and an IDT electrode on the LT layer. In the multilayer film, a differential value obtained by subtracting a total value of values each obtained by multiplying a density and thickness of a film having a slower acoustic velocity than a transverse wave acoustic velocity of the LT layer from a total value of values each obtained by multiplying a density and thickness of a film having a faster acoustic velocity than the transverse wave acoustic velocity of the LT layer is negative, and a thickness of the LT layer is less than p and a thickness of the multilayer film is less than p where a pitch of electrode fingers in the IDT electrode is “p”.

Abstract: An acoustic wave device includes a silicon substrate, a piezoelectric layer, and an IDT electrode. Each of the silicon substrate and the piezoelectric layer includes first and second opposed main surfaces. The IDT electrode is on the first main surface of the piezoelectric layer, and includes first and second electrode fingers. When a wavelength of an acoustic wave determined by an electrode finger pitch of the IDT electrode is denoted as ?, a distance between the first main surface of the silicon substrate and the second main surface of the piezoelectric layer in a thickness direction of the silicon substrate is less than about 0.84?. The first main surface of the silicon substrate is rougher than the first main surface of the piezoelectric layer.

Abstract: An acoustic wave filter device includes a substrate, first and second acoustic impedance layers, a piezoelectric layer, first and second interdigital transducer electrodes, an input terminal, an output terminal, ground terminals, a series arm circuit, and a parallel arm circuits. The first interdigital transducer electrode at least partially overlaps the first acoustic impedance layer in the plan view. The second interdigital transducer electrode at least partially overlaps the second acoustic impedance layer in the plan view. The series arm circuit is provided on a first path connecting the input terminal and the output terminal and includes the first and second interdigital transducer electrodes. A conductive layer in the first acoustic impedance layer and a conductive layer in the second acoustic impedance layer are electrically insulated from each other.

Abstract: Aspects of this disclosure relate to an acoustic wave resonator with a patterned conductive layer. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode can include a bus bar and fingers extending from the bus bar. The fingers can each include an edge portion and a body portion. The patterned conductive layer can overlap the edge portions of the fingers. The patterned conductive layer can conductive portions that are spaced apart from each other. A portion of the temperature compensation layer can be positioned between the patterned conductive layer and the interdigital transducer electrode.

Abstract: A tunable bulk acoustic wave (BAW) resonator includes: a first electrode adapted to be coupled to an oscillator circuit; a second electrode adapted to be coupled to the oscillator circuit; and a piezoelectric layer between the first electrode and the second electrode; and a Bragg mirror. The Bragg mirror has: a metal layer; and a dielectric layer between the metal layer and either of the first electrode or the second electrode. The tunable BAW resonator also includes: a radio-frequency (RF) signal source having a first end and a second end, the first end coupled to the first electrode, and the second end coupled to the second electrode; and an amplifier circuit between either the first electrode or the second electrode and the Bragg mirror metal layer.

Abstract: Disclosed is a film bulk acoustic resonator (FBAR) including a substrate, a lower electrode formed above the substrate, a piezoelectric layer formed above the lower electrode, an upper electrode formed above the piezoelectric layer, and a first protection layer formed above the upper electrode. Here, the first protection layer covers the upper electrode while extending downward along a side surface of one end of the upper electrode to cover a certain area of the piezoelectric layer.

Abstract: An acoustic wave device includes a piezoelectric layer, a first electrode, a second electrode, a first divided resonator, a second divided resonator, and a support substrate. The support substrate includes first and second energy confinement layers. The first energy confinement layer at least partially overlaps with a first region of the piezoelectric layer. The second energy confinement layer at least partially overlaps with a second region of the piezoelectric layer. The first and second energy confinement layers are integrally provided in the support substrate.