Abstract: A surface acoustic wave (SAW) resonator comprises a plurality of interdigital transducer electrodes disposed on a multilayer piezoelectric substrate (MPS) including a layer of piezoelectric material having a lower surface bonded to an upper surface of a layer of a second material different from the piezoelectric material that improves the temperature stability and reliability of the SAW resonator, and a layer of dielectric material disposed on an upper surface of the interdigital transducer electrodes and MPS.

Abstract: A radio-frequency (RF) apparatus includes a wideband receive (RX) impedance matching circuit to provide a received differential RF signal to RF receive circuitry. The wideband RX impedance matching circuit includes first and second inductors to receive the differential RF signal. The wideband RX impedance matching circuit further includes a third inductor coupled across an input o the RF receive circuitry. The third inductor performs the functionality of a capacitor having a negative capacitance value.

Abstract: Acoustic resonator devices, filter devices, and methods of making acoustic resonator devices and filter devices. An acoustic resonator device includes a substrate with a cavity and an alignment pattern in a surface of the substrate. The cavity and the alignment pattern have a same depth. A back surface of a piezoelectric plate is attached to the surface of the substrate. A portion of the piezoelectric plate that spans the cavity forms a diaphragm. An interdigital transducer (IDT) is on a front surface of the piezoelectric plate. Interleaved fingers of the IDT are on the diaphragm.

Abstract: An acoustic wave element includes an IDT electrode including electrode fingers, a first substrate on an upper surface of which the IDT electrode is located, which has a thickness of less than 2 times a repetition interval of the electrode fingers and is configured by a piezoelectric crystal, a second substrate bonded to a lower surface of the first substrate, and configured by an Si single crystal having a plane orientation of a (100) plane or (110) plane or a plane equal to them, in which substrate a crystal axis of the Si single crystal parallel to a substrate surface of Si single crystal is inclined at any angle of 25° to 65°, 115° to 155°, 205° to 245°, and 295° to 345° relative to a direction of propagation of an acoustic wave when viewed from the upper surface of the superposed first substrate.

Abstract: A first end of a linear conductor of a resonator is connected to a ground conductor on a first surface of a dielectric substrate through a via. A second end of the linear conductor of the resonator is left open. A first end of a linear conductor of a resonator is connected to a ground conductor on a second surface of the dielectric substrate through a via. A second end of the linear conductor of the resonator is left open. An input-output line is connected to the ground conductor on the second surface of the dielectric substrate through a via. An input-output line is opposed to the second ends of the linear conductor of the two resonators.

Abstract: A directional coupler (2) includes a main line (11), a sub-line (12), a variable terminator (13), and a variable filter circuit (15). The variable terminator (13) is a variable impedance circuit that terminates one end portion of the sub-line (12). The variable filter circuit (15) is connected to the other end portion of the sub-line (12). The variable filter circuit (15) may include a filter, a bypass path, and a switch which is connected to at least one of the filter and the bypass path.

Abstract: A transmission line includes connecting portion connected to the outside and a main body connected to the connecting portion. The connecting portion includes a terminal electrode connected to an external electrode, a signal conductor, and a ground conductor. The main body includes the signal conductor and the ground conductor. The connecting portion includes a first region including the terminal electrode, a second region adjacent to the first region along a signal transmission path, and a third region located between the second region and the main body. Impedance matching at the at least one of the connecting portions is achieved by the first region, the second region, and the third region.

Abstract: An acoustic wave element 1 according to the present disclosure includes a piezoelectric substrate 2 and an IDT electrode 3 on the piezoelectric substrate 2. The IDT electrode 3 includes a multilayer structure of a first layer 35 comprised of Al containing 10% or less of a sub-component and a second layer 37 comprised of a CuAl2 alloy. The second layer 37 enables the acoustic wave element 1 to have excellent electric power resistance.

Abstract: A multiplexer includes a first matching circuit having one end connected to a common terminal; a first filter that has one end connected to the other end of the first matching circuit and the other end connected to a first terminal; a second matching circuit having one end connected to the common terminal; a second filter that has one end connected to the other end of the second matching circuit and the other end connected to a second terminal; and a third filter that has one end connected to the common terminal and the other end connected to a third terminal. The first matching circuit includes a first inductor connected on a first signal path in the first matching circuit. The second matching circuit includes a second inductor connected between a second signal path in the second matching circuit and ground.

Abstract: A package that includes a first filter comprising a first polymer, a substrate cap, a second filter comprising a second polymer frame, at least one interconnect, an encapsulation layer and a plurality of through encapsulation vias. The substrate cap is coupled to the first polymer frame such that a first void is formed between the substrate cap and the first filter. The second polymer frame is coupled to the substrate cap such that a second void is formed between the substrate cap and the second filter. The at least one interconnect is coupled to the first filter and the second filter. The encapsulation layer encapsulates the first filter, the substrate cap, the second filter, and the at least one interconnect. The plurality of through encapsulation vias coupled to the first filter.

Abstract: An acoustic wave device comprises a substrate including a piezoelectric material, and interdigital transducer (IDT) electrodes disposed on a surface of the substrate. The IDT electrodes have gap regions, edge regions, and center regions. A maximum width of the IDT electrodes in the gap regions is greater than the maximum width of the IDT electrodes in the edge regions, thereby achieving a velocity of an acoustic wave in the gap regions being greater than the velocity of the acoustic wave in the center regions, and the velocity of the acoustic wave in the center regions being greater than the velocity of the acoustic wave in the edge regions.

Abstract: A film bulk acoustic resonator (FBAR) structure includes a bottom cap wafer, a piezoelectric layer disposed on the bottom cap wafer, a bottom electrode disposed below the piezoelectric layer, and a top electrode disposed above the piezoelectric layer. Portions of the bottom electrode, the piezoelectric layer, and the top electrode that overlap with each other constitute a piezoelectric stack. The FBAR structure further includes a lower cavity disposed below the piezoelectric stack. A projection of the piezoelectric stack is located within the lower cavity.

Abstract: Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI material. In some cases, the piezoelectric stack can include epitaxially grown AlN. In some cases, the piezoelectric stack can include single crystal (epitaxial) AlN in combination with polycrystalline (e.g., sputtered) AlN. The piezoelectric stack thus forms a central portion having a first resonator thickness and end wings extending from the central portion having a different resonator thickness. Each wing may also have different thicknesses. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate. The end wings can have metal electrodes formed thereon, and the central portion can have a plurality of IDT electrodes patterned thereon.

Abstract: The present invention relates to a metalized waveguide interface (1) for providing a galvanically isolated waveguide connection for a propagating signal, between a standardized waveguide (2) and a, to the standardized waveguide non-compatible, metalized chip-level waveguide (3). The metalized waveguide interface (1) is configured such that a first open-ended quarter wavelength waveguide (31) and a second open-ended quarter wavelength waveguide (32) is obtained along the directions d1 and d2, respectively, when the metalized chip-level waveguide (3) is mounted on the support surface (5). The interface is further configured such that third open-ended quarter wavelength waveguide (33) is obtained between the third surface portion (9) and the metalized chip-level waveguide (3) when the metalized chip-level waveguide (3) is mounted on the support surface (5).

Abstract: An acoustic wave device includes a plurality of interdigital transducer electrodes, in a first interdigital transducer electrode, a first electrode finger includes a wide portion having a greater width in the second direction than a center portion. In the first interdigital transducer electrode, for the first electrode finger, a first distance that is a maximum distance in the second direction between a center line of the center portion in a first direction is shorter than a second distance that is a maximum distance in a second direction between the center line of the center portion and an outer edge, away from a second interdigital transducer electrode, of the wide portion.

Abstract: A high-frequency line connection structure connects a coaxial line and a planar line. The high-frequency line connection structure includes a conductive base that is formed into a planar shape having a length that matches a length of the planar line along a lengthwise direction of a substrate, where the planar line is disposed on a surface of the conductive base, and a protrusion structure provided in a region, on the surface of the conductive base, adjacent to the coaxial line, the protrusion structure protruding from the surface of the conductive base, where the protrusion structure is in contact with a side surface of a region along the lengthwise direction of the substrate, where a ground conductive film with a smaller width out of a pair of ground conductive films of the planar line, is formed.

Abstract: A microwave transmission line assembly operated in vacuum for satellite antennas and beamforming networks comprising a first ground plane and a conductor strip positioned a distance from the first ground plane. The conductor strip comprises a first strip portion and a second strip portion (6). The first strip portion is positioned at a first distance from the first ground plane and wherein the second strip portion is positioned at a second distance from the first ground plane. The first distance is smaller than the second distance, wherein the first distance is chosen to avoid multipaction.

Abstract: An acoustic wave device includes a material layer which has Euler angles and an elastic constant at the Euler angles, a piezoelectric body which includes first and second principal surfaces opposing each other, is laminated directly or indirectly on the material layer so that the second principal surface is on the material layer side and has Euler angles, and whose elastic constant at the Euler angles, and an IDT electrode which is disposed on at least one of the first principal surface and the second principal surface of the piezoelectric body. At least one elastic constant among elastic constants C11 to C66 of the material layer not equal to 0 and at least one elastic constant among elastic constants C11 to C66 of the piezoelectric body not equal to 0 have opposite signs to each other.

Abstract: To provide a semiconductor device that makes it possible to reduce a cell circuit area and an increase in resolution. There is provided a semiconductor device including: a first region in which readout cells are arranged in an array form, the readout cells having one of input transistors included in a differential amplifier: and a second region in which reference cells are arranged in an array form, the reference cells having another input transistor included in the differential amplifier, the first region and the second region being separated from each other.

Abstract: A filter device includes a substrate having piezoelectricity, a first filter including an IDT electrode disposed on the substrate, a terminal electrode disposed on the substrate, a first wiring electrode disposed on the substrate and connecting the first filter and a terminal electrode, and a dielectric film disposed above the substrate to cover the IDT electrode. At least a portion of the first wiring electrode is not covered with the dielectric film.