Abstract: An assembly used in a process chamber for depositing a film on a wafer and including a pedestal extending from a central axis. An actuator is configured for controlling movement of the pedestal. A central shaft extends between the actuator and pedestal, the central shaft configured to move the pedestal along the central axis. A lift pad is configured to rest upon the pedestal and having a pad top surface configured to support a wafer placed thereon. A pad shaft extends between the actuator and the lift pad and controls movement of the lift pad. The pad shaft is positioned within the central shaft and is configured to separate the lift pad from the pedestal top surface by a process rotation displacement when the pedestal is in an upwards position. The pad shaft is configured to rotate relative to the pedestal top surface between first and second angular orientations.

Abstract: A template includes a sapphire substrate with a (0001) plane or a plane inclined by a predetermined angle with respect to the (0001) plane as a main surface, and an AlN layer composed of AlN crystals having an epitaxial crystal orientation relationship with the main surface directly formed on the main surface of the sapphire substrate. In the template, an average particle diameter of the AlN crystals of the AlN layer at a thickness of 20 nm from the main surface is 100 nm or less.

Abstract: An optoelectronic semiconductor chip includes a plurality of core-shell rods that generate electromagnetic radiation spaced apart from each other; a first electrically conductive contact structure for n-side electrical contacting of the core-shell rods; and a second electrically conductive contact structure for p-side electrical contacting of the core-shell rods, wherein the first electrically conductive contact structure and the second electrically conductive contact structure overlap at least in sections in a vertical direction, the optoelectronic semiconductor chip is surface mountable on a mounting side, and at least a partial region of the two electrically conductive contact structures extends through a breakthrough through at least one layer of the optoelectronic semiconductor chip.

Abstract: A semiconductor chip may include a semiconductor body, a current spreading layer, and a contact structure. The semiconductor body may include a first semiconductor layer, a second semiconductor layer, and an intervening active layer, and a current spreading layer arranged in a vertical direction between the contact structure and the semiconductor body. The semiconductor boy has a plurality of internal step configured in a terrace-like manner where the contact structure may include a plurality of conductor tracks arranged with regard to the lateral orientations of the internal step in such a way that current spreading along the internal steps is promoted vis-à-vis current spreading transversely with respect to the internal steps. A method for producing the semiconductor chip is also included.

Abstract: Disclosed in an embodiment are a semiconductor device and a semiconductor device package including the same, the semiconductor device comprising: a semiconductor structure including a first light emitting unit and a second light emitting unit; a first electrode for electrically connecting a first conductive type semiconductor layer of the first light emitting unit with a first conductive type semiconductor layer of the second light emitting unit; and a second electrode for electrically connecting a second conductive type semiconductor layer of the first light emitting unit with a second conductive type semiconductor layer of the second light emitting unit, wherein: the first electrode includes a first pad arranged on the first light emitting unit, a first branch electrode arranged on the first light emitting unit, and a first extension electrode arranged on the second light emitting unit; the second electrode includes a second pad arranged on the second light emitting unit, a second branch electrode arranged

Abstract: A multi-layered tunnel junction structure adapted to be disposed between two light emitting structures includes an n-type doped insulation layer, as well as an n-type heavily doped layer, a metal atom layer, a p-type heavily doped layer, and a p-type doped insulation layer which are disposed on the n-type doped insulation layer in such sequential order. A light emitting device having the multi-layered tunnel junction structure and a production method of such light emitting device are also disclosed.

Abstract: A display apparatus includes a display panel, a touch sensor on the display panel, and a color filter layer on the touch sensor, the color filter layer including a black matrix and a color filter. The display panel includes a display region to display an image and a non-display region outside the display region. The display region includes a central region and a peripheral region outside the central region. The black matrix includes a first black matrix located in the central region, and a second black matrix located in the peripheral region. The color filter includes a first color filter located in the central region and a second color filter located in the peripheral region. The first color filter is on an upper portion of the first black matrix, and the second black matrix is on an upper portion of the second color filter.

Abstract: A device wafer is provided that includes a substrate having major and minor surfaces, and a plurality of active devices located at the major surface. A eutectic alloy composition is formed at the minor surface of the substrate. The eutectic alloy composition is removed from the minor surface of the substrate such that a portion of the eutectic alloy composition remains at an outer perimeter of the minor surface to strengthen the outer perimeter of the substrate. A bonding layer is deposited over the minor surface and over the portion of the eutectic alloy composition at the outer perimeter of the minor surface. The bonding layer is utilized for joining semiconductor components of the device wafer to secondary structures. Additional eutectic alloy composition may remain on the minor surface of the substrate at the streets to strengthen the substrate during device wafer separation.

Abstract: According to a flexible light-emitting device production method of the present disclosure, after an intermediate region (30i) and a flexible substrate region (30d) of a plastic film (30) of a multilayer stack (100) are divided, the interface between the flexible substrate region (30d) and a glass base (10) is irradiated with lift-off light. The multilayer stack (100) is separated into the first portion (110) and the second portion (120) while the multilayer stack (100) is kept in contact with the stage (210). The first portion (110) includes a plurality of light-emitting devices (1000) which are in contact with the stage (210). The light-emitting devices (1000) include a plurality of functional layer regions (20) and the flexible substrate region (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i).

Abstract: Embodiments of three-dimensional (3D) memory devices and methods for forming the 3D memory devices are disclosed. In an example, a 3D memory device includes a substrate, a first memory deck above the substrate, a first channel structure, a first inter-deck plug above and in contact with the first channel structure, a second memory deck above the first inter-deck plug, and a second channel structure above and in contact with the first inter-deck plug. The first memory deck includes a first plurality of interleaved conductor layers and dielectric layers. The first channel structure extends vertically through the first memory deck. The first inter-deck plug includes single-crystal silicon. The second memory deck includes a second plurality of interleaved conductor layers and dielectric layers. The second channel structure extends vertically through the second memory deck.

Abstract: Examples of a method of forming an integrated circuit device with an interfacial layer disposed between a channel region and a gate dielectric are provided herein. In some examples, the method includes receiving a workpiece having a substrate and a fin having a channel region disposed on the substrate. An interfacial layer is formed on the channel region of the fin, and a gate dielectric layer is formed on the interfacial layer. A first capping layer is formed on the gate dielectric layer, and a second capping layer is formed on the first capping layer. An annealing process is performed on the workpiece configured to cause a first material to diffuse from the first capping layer into the gate dielectric layer. The forming of the first and second capping layers and the annealing process may be performed in the same chamber of a fabrication tool.

Abstract: Over a front surface of a silicon semiconductor wafer is deposited a high dielectric constant film with a silicon oxide film, serving as an interface layer, provided between the semiconductor wafer and the high dielectric constant film. After a chamber houses the semiconductor wafer, a chamber's pressure is reduced to be lower than atmospheric pressure. Subsequently, a gaseous mixture of ammonia and nitrogen gas is supplied into the chamber to return the pressure to ordinary pressure, and the front surface is irradiated with a flash light, thereby performing post deposition annealing (PDA) on the high dielectric constant film. Since the pressure is reduced once to be lower than atmospheric pressure and then returned to ordinary pressure, a chamber's oxygen concentration is lowered remarkably during the PDA. This restricts an increase in thickness of the silicon oxide film underlying the high dielectric constant film by oxygen taken in during the PDA.

Abstract: A method for manufacturing a light-emitting element includes: providing a wafer comprising: a substrate having a first surface and a second surface, and a semiconductor structure provided at the first surface; irradiating a laser beam into an interior of the substrate from a second surface side of the substrate, which comprises: forming a plurality of first modified regions, a plurality of second modified regions, and a plurality of third modified regions in the interior of the substrate; and subsequently, separating the wafer into a plurality of light-emitting elements.

Abstract: A light direction control film is provided. The light direction control film has, in a direction perpendicular to a thickness direction of the light direction control film, a refractive index decreasing from a central region of the light direction control film to each of both sides of the light direction control film gradually. A method for manufacturing a light direction control film and a fingerprint recognition panel including the light direction control film are further provided.

Abstract: A method of producing a radiation-emitting semiconductor chip includes providing a growth substrate, epitaxially growing a buffer layer on the growth substrate such that a plurality of V-pits is generated in the buffer layer, epitaxially growing a radiation-generating active semiconductor layer sequence on the buffer layer, wherein the structure of the V-pits continues into the active semiconductor layer sequence, epitaxially growing a further layer sequence on the active semiconductor layer sequence, wherein the structure of the V-pits continues into the further layer sequence, selectively removing the further layer sequence from facets of the V-pits, wherein the further layer sequence remains on a main surface of the active semiconductor layer sequence, and epitaxially growing a p-doped semiconductor layer that completely or partially fills the V-pits.

Abstract: This disclosure is directed to devices and systems and methods comprising virtual negative beveled facets including to isolate adjacent devices from one another. Aspects hereof are directed to integrated photon detectors or photodetector devices incorporating implant isolation mesas and resistors, and in particular to methods and structures for isolating such detectors or devices from neighboring detectors or devices.

Abstract: A method for manufacturing micro light-emitting diode chips includes the steps of: providing a to-be-divided light-emitting component, which includes a metal substrate and a plurality of micro light-emitting diode dies disposed on the metal substrate to permit the metal substrate to define a to-be-etched region among the micro light-emitting diode dies; and etching the metal substrate to remove the to-be-etched region so as to divide the light-emitting component into a plurality of the micro light-emitting diode chips.

Abstract: An integrated semiconductor device having a substrate with a first substrate region and a second substrate region. The integrated semiconductor device further includes a first field-effect transistor disposed on the substrate in the first substrate region. The first field-effect transistor has a plurality of first fins having a first semiconductor material. In addition, the integrated semiconductor device includes a second field-effect transistor disposed on the substrate in the second substrate region. The second field-effect transistor has a plurality of second fins having a second semiconductor material that differs from the first semiconductor material.

Abstract: A light emitting device includes a light emitting structure and a distributed Bragg reflector (DBR) structure disposed thereon. The light emitting structure includes an n-type confinement layer, an active layer disposed on the n-type confinement layer, and a p-type confinement layer disposed on the active layer opposite to the n-type confinement layer. The n-type and p-type confinement layers are disposed proximal and distal to the DBR structure, respectively. The DBR structure includes first to Nth DBR units. The first and Nth DBR units are disposed proximal and distal to the light emitting structure, respectively. Each of the first to Nth DBR units has a center reflection wavelength defined by ?+(z?1)?0.

Abstract: A method comprises: arranging a plurality of semiconductor chips above a carrier, wherein active main surfaces of the semiconductor chips face the carrier; filling a cavity with a molding material; pressing the semiconductor chips arranged on the carrier into the molding material; and separating the molding material with the semiconductor chips embedded therein from the carrier, wherein main surfaces of the semiconductor chips that are situated opposite the active main surfaces are covered by the molding material.