Abstract: A thermoplasmonic device includes a titanium film and a plurality of titanium nitride tube elements disposed on the titanium film. Each of the titanium nitride tube elements includes an open top and a titanium nitride bottom. Each of the titanium nitride tube elements has titanium nitride tubular middle portion that extends from the open top to the titanium nitride bottom.

Abstract: The present invention relates to a metal powder including 0.1?C?0.4 mass %, 0.005?Si?1.5 mass %, 0.3?Mn?8.0 mass %, 2.0?Cr?15.0 mass %, 2.0?Ni?10.0 mass %, 0.1?Mo?3.0 mass %, 0.1?V?2.0 mass %, 0.010?N?0.200 mass %, and 0.01?Al?4.0 mass %, with the balance being Fe and unavoidable impurities, and satisfying the following expression (1), 10<15[C]+[Mn]+0.5[Cr]+[Ni]<20 (1), in which [C], [Mn], [Cr] and [Ni] respectively represent the contents of C, Mn, Cr and Ni by mass %.

Abstract: A metal-ceramic substrate (1) comprising an insulating layer (11) comprising a ceramic and having a first thickness (D1), and a metallization layer (12) bonded to the insulation layer (11) and having a second thickness (D2), wherein the first thickness (D1) is less than 250 ?m and the second thickness (D2) is greater than 200 ?m and wherein the first thickness (D1) and the second thickness (D2) are dimensioned such that a ratio of an amount of the difference between a thermal expansion coefficient of the metallization layer (12) and a thermal expansion coefficient of the metal-ceramic substrate (1) to a thermal expansion coefficient of the metal-ceramic substrate (1) has a value less than 0.25, preferably less than 0.2 and more preferably less than 0.15 or even less than 0.1.

Abstract: A sputtering target for a gallium nitride thin film, which has a low oxygen content, a high density and a low resistivity. A gallium nitride powder having powder physical properties of a low oxygen content and a high bulk density is used and hot pressing is conducted at high temperature in high vacuum to prepare a gallium nitride sintered body having a low oxygen content, a high density and a low resistivity.

Abstract: A metal plate to be used in the manufacture of a deposition mask comprises: a base metal plate; and a surface layer disposed on the base metal plate, wherein the surface layer includes elements different from those of the base metal plate, or has a composition ratio different from that of the base metal plate, and an etching rate of the base metal plate is greater than the etching rate of the surface layer. An embodiment includes a manufacturing method for a deposition mask having an etching factor greater than or equal to 2.5. The deposition mask of the embodiment includes a deposition pattern region and a non-deposition region, the deposition pattern region includes a plurality of through-holes, the deposition pattern region is divided into an effective region, a peripheral region, and a non-effective region, and through-holes can be formed in the effective region and the peripheral region.

Abstract: The present invention relates to a hot stamped body comprising a steel sheet and a plating layer formed on at least one surface of the steel sheet, wherein the plating layer is comprised of a ZnO region present on a surface side of the plating layer and having an oxygen concentration of 10 mass % or more and an Ni—Fe—Zn alloy region present on a steel sheet side of the plating layer and having an oxygen concentration of less than 10 mass %, and an average concentration of a total of Fe, Mn and Si in the ZnO region is 5 mass % or more and 30 mass % or less.

Abstract: The preparation method for a nano composite coating having a shell-simulated multi-arch structure includes: constructing a discontinuous metal seed layer using a vacuum plating technology; and inducing the deposition of a continuous multi-arch structure layer utilizing the discontinuous metal seed layer, thereby realizing the controllable orientated growth of the nano composite coating having the shell-simulated multi-arch structure.

Abstract: An object comprising a chromium-based coating on a substrate is disclosed. The chromium is electroplated from an aqueous electroplating bath comprising trivalent chromium cations, wherein the chromium-based coating comprises: a first chromium-containing layer, on the substrate, having a thickness of at least 100 nm, and a Vickers microhardness value of 700-1000 HV; a second chromium-containing layer, on the first chromium-containing layer, having a Vickers microhardness value that is at least 1.3 times higher than the Vickers microhardness value of the first chromium-containing layer, and a crystal size of 8-35 nm; and wherein the chromium-based coating exhibits a critical scratch load value (LC2) of at least 60 N in the adhesion test according to ASTM C1624-05 (2015; point 11.11.4.4), and wherein the chromium-based coating does not contain chromium carbide. Further is disclosed a method for its production.

Abstract: To improve adhesion between a plating film reducing contact electrical resistance and a copper alloy plate containing Mg. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, in the copper alloy plate, a surface Mg concentration at a surface is 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/?m or more and 50% by mass/?m or less.

Abstract: Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.

Abstract: A copper alloy plate including 0.3 mass % or more and 1.2 mass % or less of Mg, 0.001 mass % or more and 0.2 mass % or less of P, and the balance Cu with inevitable impurities in a thickness center portion in a plate thickness direction; Mg concentration on a plate surface is 30% or less of bulk Mg concentration at the thickness center portion; a surface layer part having a depth from the plate surface to where it is 90% of the bulk Mg concentration is provided; and in the surface layer part, the Mg concentration increases from the plate surface toward the thickness center portion with a concentration gradient 1.8 mass %/?m or more and 50 mass %/?m or less.

Abstract: Methods of preparing 7xxx aluminum alloy products for adhesive bonding and products made therefrom are disclosed. Generally, the methods include preparing a 7xxx aluminum alloy product for anodizing, then anodizing the 7xxx aluminum alloy product, and then contacting the anodized 7xxx aluminum alloy product with an appropriate chemical to create a functionalized layer. The new 7xxx aluminum alloy products may realize improved shear bonding performance.

Abstract: A thermally conductive board includes a metal substrate, a metal layer, a thermal conductive insulating polymer layer, and a ceramic material layer. The thermal conductive insulating polymer layer is located between the metal layer and the metal substrate. The ceramic material layer includes an upper ceramic layer or a lower ceramic layer, or includes both the upper ceramic layer and the lower ceramic layer. The upper ceramic layer is disposed between the metal layer and the thermal conductive insulating polymer layer, and the lower ceramic layer is disposed between the thermal conductive insulating polymer layer and the metal substrate.

Abstract: The present invention provides a metal cord having better adhesion to rubber compared to a conventional one, as well as a metal cord-rubber composite and a conveyor belt, including the same. In a metal cord (10) composed of a plurality of metal filaments (11) twisted together, the surfaces of the metal filaments (11) constituting the outermost layer are each provided with a zinc plating layer (16), and the degrees of crystal orientation of the (002) plane and the (102) plane of the surface of the zinc plating layer (16) are less than 120.

Abstract: A Ni-plated steel sheet includes a base steel sheet and a Ni-based coating layer that is disposed on a surface of the base steel sheet. The Ni-based coating layer includes a Fe—Ni alloy region that is formed on the surface of the base steel sheet. The Fe—Ni alloy region includes a mixed phase composed of a bcc phase and an fcc phase, and a component of the Fe—Ni alloy region includes 5 mass % or more of Fe and a remainder including 90 mass % or more of Ni.

Abstract: Copper alloy, the elements of which have the following mass fractions: 46% to 53.5% copper (Cu); 0% to 1.0% aluminum (Al); 0% to 1.40% lead (Pb); 0% to 0.2% iron (Fe); 0% to 0.4% tin (Sn); 0% to 0.0002% boron (B); 0% to 0.2% arsenic (As); and remainder zinc (Zn). In addition, a use of a corresponding copper alloy for an additive manufacturing process, a sanitary fitting (1) with a corresponding copper alloy, and a method for producing a sanitary fitting (1) from a corresponding copper alloy are proposed.

Abstract: A method for producing a black plated resin part includes the steps of electroplating a resin substrate provided with an underlying plating layer in a trivalent chromium plating bath containing thiocyanic acid, to thereby form, on the underlying plating layer, a black chromium plating layer composed of trivalent chromium and having a thickness of 0.15 ?m or more; and immersing the resin substrate provided with the black chromium plating layer in warm water at 30° C. or higher for a predetermined time. In the method, the amount of thiocyanic acid contained in the trivalent chromium plating bath, the temperature of the warm water, and the time of immersion of the resin substrate in the warm water are adjusted so that the black chromium plating layer exhibits a b* value of ?1.7 or less based on the L*a*b* color system.

Abstract: A razor blade including: a substrate having a tip portion including a tip region, a blade body including a base, and first and second outer sides disposed opposite a split line of the substrate that converge at a tip; and first and second coatings disposed substantially on the first and second outer sides, respectively. Also provided is a method of coating the razor blade, including: applying a first coating to at least a portion of the first outer side; and applying a second coating to at least a portion of the second outer side. The first and second coatings each extend from the tip region toward the base and are substantially different, as compared to each other. One or both of the first and second coatings comprise a plurality of layers of material.

Abstract: There is provided a roughened nickel-plated sheet having a roughened nickel layer as an outermost surface layer on at least one surface of a metal base material, wherein the brightness L* of the surface of the roughened nickel layer is 30 to 50, the glossiness of 85° of the surface of the roughened nickel layer is 1.5 to 50.

Abstract: A method for manufacturing diamond substrate of using source gas containing hydrocarbon gas and hydrogen gas to form diamond crystal on an underlying substrate by CVD method, to form a diamond crystal layer having nitrogen-vacancy centers in at least part of the diamond crystal, nitrogen or nitride gas is mixed in the source gas, wherein the source gas is: 0.005 volume % or more and 6.000 volume % or less of the hydrocarbon gas; 93.500 volume % or more and less than 99.995 volume % of the hydrogen gas; and 5.0×10?5 volume % or more and 5.0×10?1 volume % or less of the nitrogen gas or the nitride gas, and the diamond crystal layer having the nitrogen-vacancy centers is formed. A method for manufacturing a diamond substrate to form an underlying substrate, a diamond crystal having a dense nitrogen-vacancy centers (NVCs) with an orientation of NV axis by performing the CVD.