Patents Examined by Stephanie Duclair
  • Patent number: 9911631
    Abstract: Embodiments of the invention provide a processing system and a method for processing with a heated etching solution. In one example, tight control over temperature and hydration level of an acidic etching solution is provided. According to one embodiment, the method includes forming the heated etching solution in a first circulation loop, providing the heated etching solution in the process chamber for treating a substrate, forming an additional heated etching solution in a second circulation loop, and supplying the additional heated etching solution to the first circulation loop. According to one embodiment, the processing system includes a process chamber for treating the substrate with the heated etching solution, a first circulation loop for providing the heated etching solution into the process chamber, and a second circulation loop for forming an additional heated etching solution and supplying the additional heated etching solution to the first circulation loop.
    Type: Grant
    Filed: March 13, 2014
    Date of Patent: March 6, 2018
    Assignee: TEL FSI, INC.
    Inventors: Kevin L Siefering, William P Inhofer
  • Patent number: 9909063
    Abstract: Provided is a composition for etching polymeric materials comprising an aqueous solution including an alkali metal salt and glycine.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: March 6, 2018
    Assignee: 3M INNOVATIVE PROPERTIES COMPANY
    Inventor: Ravi Palaniswamy
  • Patent number: 9899232
    Abstract: Disclosed is a method for etching an etching target layer which contains silicon and is provided with a metal-containing mask thereon. The method includes: generating plasma of a first processing gas containing a fluorocarbon gas in a processing container that accommodates the etching target layer and the mask to form a fluorocarbon-containing deposit on the mask and the etching target layer; and generating plasma of a second processing gas containing an inert gas in the processing container to etch the etching target layer by radicals of the fluorocarbon contained in the deposit. A plurality of sequences, each including the generating the plasma of the first processing gas and the generating the plasma of the second processing gas, are performed.
    Type: Grant
    Filed: June 16, 2016
    Date of Patent: February 20, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Takayuki Katsunuma
  • Patent number: 9896604
    Abstract: Described herein are compositions, kits and methods for polishing sapphire surfaces using compositions having colloidal aluminosilicate particles in an aqueous acidic solution. In some aspects, the methods for polishing a sapphire surface may include abrading a sapphire surface with a rotating polishing pad and a polishing composition. The polishing composition may include an amount of a colloidal aluminosilicate and may have a pH of about 2.0 to about 7.0.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: February 20, 2018
    Assignee: ECOLAB USA INC.
    Inventors: Kim Marie Long, Michael A. Kamrath, Sean McCue
  • Patent number: 9887091
    Abstract: A method of processing a wafer includes: a grinding step of grinding a back surface of the wafer to form, on the back side of the wafer, a recess corresponding to a device region and an annular projecting portion corresponding to a peripheral marginal region; and a splitting groove forming step of forming, after the grinding step is conducted, a splitting groove for splitting the device region and the peripheral marginal region from each other at the boundary between the recess and the annular projecting portion, the splitting groove extending from the front surface of the wafer to reach the back surface of the wafer. The splitting groove is formed by dry etching.
    Type: Grant
    Filed: May 5, 2015
    Date of Patent: February 6, 2018
    Assignee: DISCO CORPORATION
    Inventor: Katsuhiko Suzuki
  • Patent number: 9879156
    Abstract: Provided is a polishing composition which can polish a sapphire substrate having a non-polar plane or a semi-polar plane at a high polishing rate. The invention is a polishing composition used in an application to polish a sapphire substrate having a non-polar plane or a semi-polar plane, the polishing composition containing colloidal silica particles and water, in which a value obtained by dividing a specific surface area (unit: m2/g) of the colloidal silica particles by a number average particle diameter (unit: nm) of the colloidal silica particles, that is, (specific surface area/number average particle diameter) is 0.5 or more and 3.0 or less.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: January 30, 2018
    Assignee: FUJIMI INCORPORATED
    Inventors: Jun Ito, Kazutoshi Hotta, Hiroyasu Sugiyama, Hitoshi Morinaga
  • Patent number: 9841676
    Abstract: A method for manufacturing a display device includes forming a plurality of light blocking patterns on a first surface of a transparent substrate, wherein a first light blocking pattern of the plurality of light blocking patterns has a different line width than a second light blocking pattern of the plurality of light blocking patterns. An insulating layer is formed on the first surface of the transparent substrate and the light blocking patterns. A conductive layer is formed on the insulating layer. A photo-resist layer is formed on the conductive layer. The photo-resist layer is exposed with ultraviolet rays through a second surface of the transparent substrate, wherein the first and second surfaces of the transparent substrate are opposite to each other. The photo-resist layer is developed. The conductive layer is etched using the photo-resist layer as a mask. The photo-resist layer is removed.
    Type: Grant
    Filed: April 26, 2016
    Date of Patent: December 12, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hoon Kang, Bum Soo Kam, Se Yoon Oh, Chong Sup Chang
  • Patent number: 9837272
    Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.
    Type: Grant
    Filed: April 6, 2016
    Date of Patent: December 5, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Su-Min Park, Su-Min Kim, Hyo-Jin Yun, Hyun-Woo Kim, Kyoung-Seon Kim, Hai-Sub Na, Min-Ju Park, So-Ra Han
  • Patent number: 9824700
    Abstract: A manufacturing method for a magnetic head forms a leading shield having a top surface. The top surface of the leading shield includes first and second portions. The second portion is located farther from a medium facing surface than is the first portion, and recessed from the first portion. A first gap layer is then formed on the first portion. Then, a magnetic layer including an initial first side shield, an initial second side shield and a coupling section connecting them is formed using a mold. The mold is then removed. The coupling section is then removed by etching the magnetic layer. A second gap layer and a main pole are then formed in this order.
    Type: Grant
    Filed: May 23, 2016
    Date of Patent: November 21, 2017
    Assignee: TDK CORPORATION
    Inventors: Hiroki Aritomo, Atsushi Yamaguchi, Michitaka Nishiyama, Yumiko Yokoyama, Koichi Otani
  • Patent number: 9818657
    Abstract: A first etching rate of the first conductive film is calculated by acquiring correlation between an opening ratio of an etching mask and an etching rate of an etching target film, and then, performing a first dry etching to a first conductive film formed on a first wafer. Next, a second etching mask is formed on a second conductive film formed on a second wafer, and an etching time of the second conductive film is determined from the correlation between the opening ratio and the etching rate, the first etching rate, and a film thickness of the second conductive film when the second conductive film is subjected to a second dry etching in time-controlled etching.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: November 14, 2017
    Assignee: Renesas Electronics Corporation
    Inventors: Keiji Okamoto, Kazuyuki Ozeki, Hiromasa Arai
  • Patent number: 9812042
    Abstract: A lighted assembly includes a perforated member having a plurality of relatively small openings therethrough. The openings are arranged to provide areas forming letters, designs, or the like. A light source may be positioned adjacent the perforated member whereby light from the light source travels through the openings to form illuminated letters, designs or the like. The perforations may be filled with a light-transmitting polymer material. The light source may comprise an LED and a light guide that distributes light along a lower side of the perforated member. The light source may be positioned in a waterproof housing that is sealed to the perforated member.
    Type: Grant
    Filed: October 28, 2013
    Date of Patent: November 7, 2017
    Assignees: Innotec Corp., Vestatec (U.K.) Limited
    Inventors: Jason R. Mulder, David L. Hiemstra, Antony John Skirrow
  • Patent number: 9803109
    Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) colloidal silica particles that are surface modified with metal ions selected from Mg, Ca, Al, B, Be, and combinations thereof, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm2 to about 8 hydroxyls per nm2 of a surface area of the particles, (b) an anionic surfactant, (c) a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 7, and wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon nitride, silicon oxide, and/or polysilicon.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: October 31, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Hung-Tsung Huang, Ming-Chih Yeh, Chih-Pin Tsai
  • Patent number: 9799526
    Abstract: An etching method includes etching a silicon substrate with a liquid composition containing an alkaline organic compound, water, and a boron compound with a content in the range of 1% by mass to 14% by mass. The boron compound is at least one of boron sesquioxide, sodium tetraborate, metaboric acid, sodium perborate, sodium borohydride, zinc borate, and ammonium borate.
    Type: Grant
    Filed: July 13, 2015
    Date of Patent: October 24, 2017
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Hirohisa Fujita, Taichi Yonemoto, Shuji Koyama
  • Patent number: 9798317
    Abstract: Provided is a substrate processing method of filling a recess of a predetermined uneven pattern formed on a substrate with a film forming material by performing a first film forming processing, a first etching processing and a second film forming processing on the substrate, using a vertical substrate processing apparatus and a control apparatus controlling operations of the vertical substrate processing apparatus. The method includes calculating a first film forming condition, a first etching condition, and a second film forming condition by the control apparatus such that the film forming material is filled in the recess without any void after the second film forming processing; and performing the first film forming processing, the first etching processing and the second film forming processing on the substrate based on the calculated first film forming condition, first etching condition and second film forming condition.
    Type: Grant
    Filed: July 1, 2014
    Date of Patent: October 24, 2017
    Assignee: Tokyo Electron Limited
    Inventors: Yuichi Takenaga, Katsuhiko Komori
  • Patent number: 9801284
    Abstract: A method of manufacturing a patterned conductor is provided, comprising: providing a substrate, comprising: a base material with an electrically conductive layer disposed thereon; providing an electrically conductive layer etchant; providing a spinning material, comprising: a carrier; and, a photosensitive masking material; providing a developer; forming a plurality of masking fibers and depositing them onto the electrically conductive layer to form a plurality of deposited fibers; patterning the plurality of deposited fibers to provide a treated fiber portion and an untreated fiber portion; developing the plurality of deposited fibers, wherein either the treated fiber portion or the untreated fiber portion is removed, leaving a patterned fiber array; contacting the electrically conductive layer to the electrically conductive layer etchant, wherein the electrically conductive layer that is uncovered by the patterned fiber array is removed, leaving a patterned conductive network on the substrate.
    Type: Grant
    Filed: November 18, 2015
    Date of Patent: October 24, 2017
    Assignee: Dow Global Technologies LLC
    Inventors: Tamara Dikic, Michael A. De Graaf, Christophe Brault, Stefan Prot, C A Torfs-Van Cotthem
  • Patent number: 9799532
    Abstract: The CMP polishing liquid of the invention comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains. The polishing method of the invention comprises a step of polishing at least a palladium layer with an abrasive cloth while supplying a CMP polishing liquid between the palladium layer of a substrate having the palladium layer and the abrasive cloth, wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains.
    Type: Grant
    Filed: January 4, 2011
    Date of Patent: October 24, 2017
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Hisataka Minami, Jin Amanokura, Sou Anzai
  • Patent number: 9793136
    Abstract: A plasma etching method can form a hole having a required opening diameter in a silicon nitride layer, while suppressing a tip end portion of the hole from being narrowed. The plasma etching method includes a first process of supplying a processing gas containing oxygen and fluorocarbon into a plasma processing apparatus; and a second process of etching a silicon nitride layer 106a of a processing target object with a first mask 106 by exciting the processing gas into plasma. Further, the second process is performed in a state where an organic film ad generated from the processing gas is formed on an inner wall of an opening of the first mask 106 by gradually reducing a temperature of the processing target object from a first temperature T1 (80° C.) to a second temperature T2 (40° C.).
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: October 17, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kosei Ueda, Yoshinobu Hayakawa
  • Patent number: 9793134
    Abstract: A method of concurrently etching a first region in which silicon oxide films and silicon nitride films are alternately stacked and a second region including the silicon oxide film having a thickness larger than a thickness of the silicon oxide film of the first region is provided. The method includes generating plasma of a first processing gas containing a fluorocarbon gas and a hydrofluorocarbon gas within a processing vessel of a plasma processing apparatus into which a processing target object is carried; and generating plasma of a second processing gas containing a hydrogen gas, a hydrofluorocarbon gas and a nitrogen gas within the processing vessel of the plasma processing apparatus. Further, the generating of the plasma of the first processing gas and the generating of the plasma of the second processing gas are repeated alternately.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: October 17, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yusuke Saitoh, Hironobu Ichikawa
  • Patent number: 9786512
    Abstract: Provided is an etching method for simultaneously etching first and second regions of a workpiece. The first region has a multilayered film configured by alternately laminating a silicon oxide film and a silicon nitride film and a second region has a silicon oxide film having a film thickness that is larger than that of the silicon oxide film in the first region. A mask is provided on the workpiece to at least partially expose each of the first and second regions. In the etching method, plasma of a first processing gas containing fluorocarbon gas, hydrofluorocarbon gas, and oxygen gas is generated within a processing container of a plasma processing apparatus. Subsequently, plasma of a second processing gas containing fluorocarbon gas, hydrofluorocarbon gas, oxygen gas, and a halogen-containing gas is generated within the processing container. Subsequently, plasma of a third processing gas containing oxygen gas is generated within the processing container.
    Type: Grant
    Filed: April 5, 2016
    Date of Patent: October 10, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yu Nagatomo, Ryuuu Ishita, Daisuke Tamura, Kousuke Koiwa
  • Patent number: 9786503
    Abstract: Provided is a method for increasing pattern density of a structure using an integration scheme and perform pitch splitting at the resist level without the use of hard mandrels, the method comprising: providing a substrate having a patterned resist layer and an underlying layer comprising a silicon anti-reflective coating layer, an amorphous layer, and a target layer; performing a resist hardening process; performing a first conformal spacer deposition using an atomic layer deposition technique with an oxide, performing a spacer first reactive ion etch process and a first pull process on the first conformal layer, performing a second conformal spacer deposition using titanium oxide; performing a second spacer RIE process and a second pull process, generating a second spacer pattern; and transferring the second spacer pattern into the target layer, wherein targets include patterning uniformity, pulldown of structures, slimming of structures, aspect ratio of structures, and line width roughness.
    Type: Grant
    Filed: April 4, 2016
    Date of Patent: October 10, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Angelique D. Raley, Nihar Mohanty, Akiteru Ko