Abstract: The invention provides a process for forming a multi-layer film including the steps of: (1) forming an under layer film onto a substrate by coating an under layer film material containing a resin represented by the following general formula (1) in which a compound having a bisnaphthol group has been made a novolac resin, and curing the same by heat treatment at a temperature in a range of 300° C. or higher and 700° C. or lower for 10 seconds to 600 seconds, (2) forming a silicon film onto the under layer film, (3) forming a hydrocarbon film onto the silicon film by coating a hydrocarbon film material, and (4) forming a silicon-oxidized film onto the hydrocarbon film by coating a silicon-oxidized film material. There can be provided a process for forming a multi-layer film which can reduce reflectance, and useful for a patterning process with high dimensional accuracy of dry etching.

Abstract: The present invention provides a composition for etching treatment of a resin material, the composition comprising an aqueous solution having a permanganate ion concentration of 0.2 mmol/L or more and a total acid concentration of 10 mol/L or more, and the aqueous solution satisfying at least one of the following conditions (1) to (3): (1) containing an organic sulfonic acid in an amount of 1.5 mol/L or more, (2) setting the divalent manganese ion molar concentration to 15 or more times higher than the permanganate ion molar concentration, and (3) setting the addition amount of an anhydrous magnesium salt to 0.1 to 1 mol/L. The composition for etching treatment of the present invention is a composition containing no hexavalent chromium and having excellent etching performance and good bath stability.

Abstract: The invention is an aqueous composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a copper interconnect metal. The aqueous composition includes an oxidizer, an inhibitor for the copper interconnect metal, 0.001 to 15 weight percent of a water soluble modified cellulose, non-saccaride water soluble polymer, 0 to 15 complexing agent for the copper interconnect metal, 0 to 15 weight percent phosphorus compound, 0.05 to 20 weight percent of an acid compound that is capable of complexing copper ions, and water; and the solution has an acidic pH.

Abstract: The present invention provides an acidic aqueous polishing composition suitable for polishing a silicon nitride-containing substrate in a chemical-mechanical polishing (CMP) process. The composition, at point of use, preferably comprises about 0.01 to about 2 percent by weight of at least one particulate ceria abrasive, about 10 to about 1000 ppm of at least one non-polymeric unsaturated nitrogen heterocycle compound, 0 to about 1000 ppm of at least one cationic polymer, optionally, 0 to about 2000 ppm of at least one polyoxyalkylene polymer, and an aqueous carrier therefor. The cationic polymer preferably is selected from a poly(vinylpyridine) polymer, a quaternary ammonium-substituted acrylate polymer, a quaternary ammonium-substituted methacrylate polymer, or a combination thereof. Methods of polishing substrates and of selectively removing silicon nitride from a substrate in preference to removal of polysilicon using the compositions are also provided.

Abstract: This disclosure relates to a method for manufacturing a color filter being capable of suppressing a surface of a colored pattern from being rough in a planarization treatment, a color filter and a solid-state imaging device.

Abstract: The methods involve selectively depositing a resist containing a solid hydrogenated rosin resin and a liquid hydrogenated rosin resin ester as a mixture on a semiconductor followed by etching uncoated portions of the semiconductor and simultaneously inhibiting undercutting of the resist. The etched portions may then be metallized to form current tracks.

Abstract: An adaptive feedback control method is provided for a chemical mechanical polish process to minimize a dielectric layer clearing time difference between two annular regions on a substrate. An optical system with an optical window passes below the polishing pad and detects reflected light interference signals from at least two annular regions. A pre-clearing time difference is determined and is used to calculate an adjustment to one or both of a CMP head membrane pressure and a retaining ring pressure. The pressure adjustment is applied before the end of the polish cycle to avoid the need for a second polish cycle and to reduce a dishing difference and a resistance difference in a metal layer in the at least two annular regions. In some embodiments, a second pressure adjustment is performed before the end of the cycle and different CMP head membrane pressure adjustments are made in different pressure zones.

Abstract: A polishing slurry for tungsten and a substrate polishing method are disclosed. The polishing slurry includes an abrasive for performing polishing and having positive zeta potential, and a potential modulator for promoting the oxidation of the tungsten and for controlling the zeta potential of the abrasive.

Abstract: A method of opening a barrier film below copper structures in a stack is provided. A pulsed gas is provided into a plasma processing chamber, wherein the providing the pulsed gas comprises providing a pulsed H2 containing gas and providing a pulsed halogen containing gas, wherein the pulsed H2 containing gas and the pulsed halogen containing gas are pulsed out of phase, and wherein the pulsed H2 containing gas has an H2 high flow period and the pulsed halogen containing gas has a halogen containing gas high flow period, wherein the H2 high flow period is greater than the halogen containing gas high flow period. The pulsed gas is formed into a plasma. The copper structures and the barrier film are exposed to the plasma, which etches the barrier film. In another embodiment, a wet and dry cyclical process may be used.

Abstract: The invention concerns a method of producing a circuit including the step consisting of connecting, to a bottom wall of a cavity, an electronic component with or without an intermediate wired link, the method including a step prior to an etching step which consists of depositing a layer of protective material on a conductive layer in the bottom of the cavity, said material being a liquid material capable of hardening and, once hardened, resistant to the etching solution.

Abstract: A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the nitrogen-doped amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the nitrogen-doped amorphous carbon layer, and removing the patterned features from the substrate.

Abstract: In a method for manufacturing a radiation window there is produced a layered structure where an etch stop layer exists between a carrier and a solid layer. A blank containing at least a part of each of the carrier, the etch stop layer, and the solid layer is attached to a radiation window frame. At least a part of what of the carrier was contained in the blank is removed, thus leaving a foil attached to the radiation window frame, wherein the foil contains at least a part of each of the etch stop layer and the solid layer.

Abstract: Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental hydrogen, a fluorine-containing gas and a protectant gas. The plasma-activated gases reacts with the high-dose implant resist, removing both the crust and bulk resist layers, while simultaneously protecting exposed portions of the work piece surface. The work piece surface is substantially residue free with low silicon loss.

Abstract: A substrate processing method is performed to improve surface roughness of a pattern mask formed on a substrate by being exposed and developed. The method includes supplying a first solvent in a gaseous state to a surface of the substrate to dissolve the pattern mask, and supplying a second solvent to the surface of the substrate, which is supplied with the first solvent, to dissolve the pattern mask, wherein a permeability of the second solvent is lower than a permeability of the first solvent.

Abstract: A method of etching a silicon substrate, in which a depressed portion is formed by etching a first surface of the silicon substrate with ions generated in plasma, the method including introducing a rare gas into a reaction system to ionize the rare gas.

Abstract: According to various embodiments, a method for processing a carrier may include: performing a dry etch process in a processing chamber to remove a first material from the carrier by an etchant, the processing chamber including an exposed inner surface including aluminum and the etchant including a halogen; and, subsequently, performing a hydrogen plasma process in the processing chamber to remove a second material from at least one of the carrier or the inner surface of the processing chamber.

Abstract: A composition for pattern formation includes a block copolymer and a solvent. The block copolymer is capable of forming a phase separation structure through directed self-assembly. The block copolymer includes a first block and a second block. The first block includes a first repeating unit which includes at least two silicon atoms. The second block includes a second repeating unit which does not include a silicon atom. A sum of the atomic weight of atoms constituting the first repeating unit is no greater than 700.

Abstract: The present disclosure relates to a method for manufacturing a color filter being capable of suppressing residue from being generated on a colored layer planarized by a planarization treatment, a color filter, and a solid-state imaging device.

Abstract: A method of anisotropically dry-etching exposed substrate material on a patterned substrate is described. The patterned substrate has a gap formed in a single material made from, for example, a silicon-containing material or a metal-containing material. The method includes directionally ion-implanting the patterned structure to implant the bottom of the gap without implanting substantially the walls of the gap. Subsequently, a remote plasma is formed using a fluorine-containing precursor to etch the patterned substrate such that either (1) the walls are selectively etched relative to the floor of the gap, or (2) the floor is selectively etched relative to the walls of the gap. Without ion implantation, the etch operation would be isotropic owing to the remote nature of the plasma excitation during the etch process.

Abstract: Provided are a surface roughening agent for aluminum and a surface roughening method using said surface roughening agent wherein it is possible to easily reduce costs for the surface roughening step and to improve the adhesiveness between aluminum and a resin. Specifically, provided is a surface roughening agent for aluminum comprising an aqueous solution containing: an alkali source, an amphoteric metal ion, a nitrate ion, and a thio compound. Moreover, provided is a surface roughening method for aluminum which involves a surface roughening step in which the surface of aluminum is treated with the aforementioned surface roughening agent.