Patents Examined by Stephen Stein
  • Method for fabricating a III nitride film, substrate for epitaxial growth, III nitride film, epitaxial growth substrate for III nitride element and III nitride element
    Patent number: 6749957
    Abstract: An acicular structure is formed of AlN on the main surface of a base made of single crystal. Then, a desired Al-including III nitride film is formed on the main surface of the base via the acicular structure.
    Type: Grant
    Filed: December 18, 2002
    Date of Patent: June 15, 2004
    Assignee: NGK Insulators, Ltd.
    Inventors: Tomohiko Shibata, Shigeaki Sumiya, Mitsuhiro Tanaka
  • Porous silica coating with low dielectric constant, semiconductor device and coating composition
    Patent number: 6746714
    Abstract: A coating composition having an aluminum-containing polysilazane and a polyacrylate or polymethacrylate ester in an organic solvent and methods of producing the same.
    Type: Grant
    Filed: February 24, 2003
    Date of Patent: June 8, 2004
    Assignee: Clariant Finance (BVI) Limited
    Inventors: Tomoko Aoki, Yasuo Shimizu
  • Manufacturing method of silicon carbide single crystals
    Patent number: 6746787
    Abstract: When a SiC substrate is heated up to around 1800° C., sublimation of SiC occurs from the SiC substrate. Moreover, temperature of the front surface of the SiC substrate is lower than that of the back surface of the SiC substrate. Therefore, sublimation gas sublimed from a back-surface vicinity of the substrate, where temperature is high, moves to a front-surface vicinity of the substrate, where temperature is low, through the hollow micro-pipe defect. Epitaxial growth proceeds on the front surface of the substrate while the sublimation gas is recrystallized at the front-surface vicinity of the substrate, so that the micro-pipe defect is occluded.
    Type: Grant
    Filed: December 10, 2001
    Date of Patent: June 8, 2004
    Assignee: Denso Corporation
    Inventors: Masami Naito, Kazukuni Hara, Fusao Hirose, Shoichi Onda
  • Thermal annealing process for producing silicon wafers with improved surface characteristics
    Patent number: 6743495
    Abstract: A process for manufacturing silicon wafers that reduces the size of silicon wafer surface and/or sub-surface defects without the forming excessive haze. The process entails cleaning the front surface of the silicon wafer at a temperature of at least about 1100° C. by exposing the front surface to a cleaning ambient comprising H2, HF gas, or HCl gas to remove silicon oxide from the front surface and exposing the cleaned front surface of the silicon wafer at a temperature of at least about 1100° C. to a vacuum or an annealing ambient consisting essentially of a mono-atomic noble gas selected from the group consisting of He, Ne, Ar, Kr, and Xe to facilitate the migration of silicon atoms to the exposed agglomerated defects without substantially etching silicon from the front surface of the heated silicon wafer.
    Type: Grant
    Filed: March 29, 2002
    Date of Patent: June 1, 2004
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Jiri L. Vasat, Andrei Stefanescu, Thomas A. Torack, Gregory M. Wilson
  • Ceramic capacitor and method for the manufacture thereof
    Patent number: 6743518
    Abstract: A ceramic capacitor has at least one dielectric layer and at least two electrodes having the dielectric layers therebetween. The dielectric layer includes a sintered body of ceramic grains containing a primary component of a perovskite crystal structure in a form of ABO3 and a ratio A/B of outer portions of the ceramic grains is greater than that of an inner portions thereof.
    Type: Grant
    Filed: November 13, 2002
    Date of Patent: June 1, 2004
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Jun Ogasawara, Youichi Mizuno
  • Electroless copper plating solution and high-frequency electronic component
    Patent number: 6743479
    Abstract: An electroless copper plating solution which can ensure superior adhesion of a copper plating film to a flat ceramic surface having low roughness and which can form a high-frequency electronic component having superior high-frequency conductivity and a high Q value is provided. Also provided is a high frequency electronic component formed by using this electroless copper plating solution. The electroless copper plating solution of contains copper ions, nickel ions, formaldehyde or a derivative thereof, and tartaric acid or a salt thereof. The ratio of the content of the nickel ions to that of the copper ions on a molar basis is in the range of about 0.0001 to 0.015.
    Type: Grant
    Filed: April 12, 2002
    Date of Patent: June 1, 2004
    Assignee: Murata Manufacturing Co. Ltd.
    Inventors: Osamu Kanoh, Kenji Yoshida
  • Oriented conductive oxide electrodes on SiO2/Si and glass
    Patent number: 6743292
    Abstract: A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide.
    Type: Grant
    Filed: September 18, 2001
    Date of Patent: June 1, 2004
    Assignee: The Regents of the University of California
    Inventors: Quanxi Jia, Paul N. Arendt
  • Rolling process for producing biaxially textured substrates
    Patent number: 6740421
    Abstract: A method of preparing a biaxially textured article includes the steps of: rolling a metal preform while applying shear force thereto to form as-rolled biaxially textured substrate having an a rotated cube texture wherein a (100) cube face thereof is parallel to a surface of said substrate, and wherein a [100] direction thereof is at an angle of at least 30° relative to the rolling direction; and depositing onto the surface of the biaxially textured substrate at least one epitaxial layer of another material to form a biaxially textured article.
    Type: Grant
    Filed: July 14, 2003
    Date of Patent: May 25, 2004
    Assignee: UT-Battelle, LLC
    Inventor: Amit Goyal
  • Circuit board and method for manufacturing the same, and electronic apparatus comprising it
    Patent number: 6737153
    Abstract: A circuit board comprising a composite resin and a metal plate, the metal plate forming circuit patterns. The composite resin comprises 70-95 parts by weight of inorganic filler, and 5-30 parts by weight of a resin composition including a thermosetting resin and a hardener. The metal plate is surface treated to reinforce the adhesion at least at one surface contacting with the composite resin. The composite resin fills spaces between the circuit patterns, and the composite resin composition and the metal plate form a plane at a side of the metal plate for mounting components. Since the resin composition including the inorganic filler is also present in the spaces between circuit patterns of a metal plate, heat dissipation characteristic of the circuit board is extremely high, and is suited for electronic apparatus containing heat generating parts such as power circuit.
    Type: Grant
    Filed: June 28, 2002
    Date of Patent: May 18, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Masaki Suzumura, Fumiaki Hashimoto
  • ZnO film, method for manufacturing the same, and luminescent element including the same
    Patent number: 6733895
    Abstract: A p-type ZnO film is formed on a sapphire substrate by RF magnetron sputtering in an atmosphere of a mixture of Ar and N2 gases, using a Zn metal target doped with Y2O3. The p-type ZnO film can be easily formed even on a large-sized substrate.
    Type: Grant
    Filed: September 5, 2002
    Date of Patent: May 11, 2004
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Michio Kadota, Toshinori Miura
  • Reflective, solar control coated glass article
    Patent number: 6733889
    Abstract: A coated glass article is formed having a glass substrate and at least first and second coatings deposited over the glass substrate. The first coating is a low emissivity layer having a first refractive index. The second coating is a reflecting layer having a second refractive index greater than the first refractive index of the first coating. The coated glass—article exhibits an Rf>15% and an emissivity less than or equal to about 0.3.
    Type: Grant
    Filed: May 14, 2002
    Date of Patent: May 11, 2004
    Assignee: Pilkington North America, Inc.
    Inventors: Srikanth K. Varanasi, Michael P. Remington, Jr., David Strickler
  • Dielectric composition and multilayer ceramic condenser using the same
    Patent number: 6733897
    Abstract: A dielectric compound for a multilayer ceramic condenser having a low sintering temperature and a high dielectric constant includes a base material of (BaxCa1−x)m(TiyZr1−y)O3 (where 0.7≦x≦1, 0.75≦y≦0.9, 0.998≦m≦1.006), an additive including MnO2 of less than 0.8 weight %, Y2O3 of less than 0.8 weight %, V2O5 of 0˜0.1 weight %, and a sintering aid of zLi2O−2(1−z)SiO2 (0.2≦z≦0.9) of less than 1.0 weight %. The weight % is a ratio relating to a weight of base material of the dielectric compound.
    Type: Grant
    Filed: May 23, 2003
    Date of Patent: May 11, 2004
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Chang Hak Choi, Kang Heon Hur, Chang Ho Lee, Hee Young Son
  • Electrically conducting ternary amorphous fully oxidized materials and their application
    Patent number: 6723436
    Abstract: Electrically active devices are formed using a special conducting material of the form Tm—Ox mixed with SiO2 where the materials are immiscible. The immiscible materials are forced together by using high energy process to form an amorphous phase of the two materials. The amorphous combination of the two materials is electrically conducting but forms an effective barrier.
    Type: Grant
    Filed: March 22, 2000
    Date of Patent: April 20, 2004
    Assignee: California Institute of Technology
    Inventors: Pierre Giauque, Marc Nicolet, Stefan M. Gasser, Elzbieta A. Kolawa, Hillary Cherry
  • Semiconductor processing component having low surface contaminant concentration
    Patent number: 6723437
    Abstract: A method for cleaning ceramic workpieces such as SiC boats used in semiconductor fabrication is disclosed. The method comprises washing a virgin or used ceramic workpiece with a strong acid and then using a pelletized CO2 cleaning process on the acid-washed component. The inventive method has been found to produce a workpiece having a very low level of metallic and particulate contaminants on its surface.
    Type: Grant
    Filed: February 19, 2002
    Date of Patent: April 20, 2004
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: Andrew G. Haerle, Gerald S. Meder
  • Castellation technique for improved lift-off of photoresist in thin-film device processing and a thin-film device made thereby
    Patent number: 6716515
    Abstract: A castellation technique for improved lift-off of deposited thin film on photoresist in thin-film device processing of particular utility in the production of magnetic data transducers and recording heads. By correctly designing the edge boundary of a photoresist structure, enhanced regions of low resist edge bombardment and low deposit penetration may be achieved. These enhanced regions enable the lift-off of extra thick deposited regions that would not be otherwise achievable through the use of conventional techniques with and without castellation.
    Type: Grant
    Filed: January 16, 2003
    Date of Patent: April 6, 2004
    Assignee: Quantum Corporation
    Inventors: Vijay K. Basra, Lawrence G. Neumann
  • Heterointegration of materials using deposition and bonding
    Patent number: 6703144
    Abstract: A semiconductor structure including a first substrate, and an epitaxial layer bonded to the substrate. The epitaxial layer has a threading dislocation density of less than 107 cm−2 and an in-plane lattice constant that is different from that of the first substrate and a second substrate on which the epitaxial layer is fabricated. In another embodiment, there is provided a method of processing a semiconductor structure including providing a first substrate; providing a layered structure including a second substrate having an epitaxial layer provided thereon, the epitaxial layer having an in-plane lattice constant that is different from that of the first substrate and a threading dislocation density of less than 107 cm−2; bonding the first substrate to the layered structure; and removing the second substrate.
    Type: Grant
    Filed: March 18, 2003
    Date of Patent: March 9, 2004
    Assignee: AmberWave Systems Corporation
    Inventor: Eugene A. Fitzgerald
  • Semi-insulating substrate, semiconductor optical device and fabrication method of semiconductor thin film
    Patent number: 6692837
    Abstract: A semi-insulating InP substrate in which a Ru-doped semi-insulating semiconductor layer is formed on the surface is provided, wherein the Ru-doped semi-insulating semiconductor layer has a complete semi-insulating property. The semiconductor optical device is fabricated by forming the Ru-doped semi-insulating semiconductor layer on a Fe-doped semi-insulating InP substrate, and forming a semiconductor crystal layer to which a p-type impurity is doped.
    Type: Grant
    Filed: May 10, 2002
    Date of Patent: February 17, 2004
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Ryuzo Iga, Matsuyuki Ogasawara, Susumu Kondo, Yasuhiro Kondo
  • Heat treatable coated articles with boride layer of titanium and/or zirconium and methods of making same
    Patent number: 6689475
    Abstract: A coated article is provided with a coating or layer system that includes at least one layer including a boride of zirconium and/or titanium sandwiched between at least a pair of dielectric layers. In certain example embodiments, the coating or layer system has good corrosion resistance, good mechanical performance such as scratch resistance, and/or good color stability (i.e., a low &Dgr;E* value(s)) upon heat treatment (HT).
    Type: Grant
    Filed: November 20, 2002
    Date of Patent: February 10, 2004
    Assignee: Guardian Industries Corp.
    Inventor: Yuping Lin
  • Articles with nanocomposite coatings
    Patent number: 6689453
    Abstract: A method of producing a nanocomposite coating without gaseous precursor reactants. A non-nanocrystalline particulate containing a polymorphic material in an atmospheric phase is introduced into a high-velocity gas jet. The projected particulate is allowed to impact a substrate at a velocity effective to cause at a least a portion of the polymorphic material to transform to a nanocrystalline, high pressure phase.
    Type: Grant
    Filed: April 1, 2002
    Date of Patent: February 10, 2004
    Assignee: Research Foundation of State University of New York
    Inventors: Ramasis Goswami, Sanjay Sampath, John Parise, Herbert Herman
  • Corrosion-resistant ceramics
    Patent number: 6682821
    Abstract: Anti-corrosion ceramics comprising a substrate of at least one kind of silicon-containing ceramics selected from a silicon nitride, a silicon carbide and Sialon, and a surface protection layer formed on the surface of the substrate, wherein the surface protection layer comprises a zirconium oxide stabilized with an element of the Group IIIa of periodic table, and the total amount of Al and Si in the surface protection layer is suppressed to be not larger than 1% by mass. Particularly, the surface layer has a thickness of from 5 to 200 &mgr;m and a porosity of 5 to 30%. The anti-corrosion ceramics exhibits a high resistance against the corrosion due to the water vapor of high temperatures in a region of not lower than 1000° C., and can be preferably used as parts of internal combustion engines such as parts of gas turbine engines, like a turbine rotor, nozzles, a combustor liner and a transition duct.
    Type: Grant
    Filed: December 26, 2002
    Date of Patent: January 27, 2004
    Assignee: Kyocera Corporation
    Inventors: Takero Fukudome, Sazo Tsurudono, Tohru Hisamatsu, Isao Yuri