Patents Examined by Steve Rosasco
  • Patent number: 6103427
    Abstract: A pattern mask pellicle comprising a peripheral frame, a transparent film extending across the top peripheral surface of the frame, and a peripheral gasket adhered to the bottom peripheral surface of the frame, the frame/gasket assembly including at least one tacky, continuous, tortuous path connecting an opening in the interior wall of the assembly with an opening in the exterior wall of the assembly. At least one pellicle is mounted on a pattern mask substrate to protect the pattern area during imaging in the production of integrated circuits.
    Type: Grant
    Filed: April 13, 1993
    Date of Patent: August 15, 2000
    Assignee: DuPont Photomasks, Inc.
    Inventor: Glenn Edward Storm
  • Patent number: 5458999
    Abstract: A phase shifting method uses a special interferometer in which the illuminating beam is divided into two or more components and the mask is irradiated from both sides. The pattern to be transferred onto the wafer (the mask) is generated on an optically transmissive substrate by appropriately combining reflective, transparent and absorptive areas. The optical paths of the beams illuminating the back side and the front side of the mask (that will be called transmitted and reflected beams respectively) are chosen so that the phase of the two beams is different by approximately an odd multiple of .pi. radians at the surface of the mask. The combined beams are projected onto the target wafer by suitable optics. The phase difference between the illuminating beams reduces the edge blurring that results from diffraction effects.
    Type: Grant
    Filed: June 24, 1993
    Date of Patent: October 17, 1995
    Inventors: Gabor Szabo, Frank K. Tittel, Joseph R. Cavallaro, Motoi Kido
  • Patent number: 5443931
    Abstract: A light-shield film pattern and a phase shifter are formed on a transparent substrate. An applied oxide film is used as the phase shifter. On this phase shift mask, a phase shifter defect is present. On the phase shift mask containing the phase shifter defect, a silicon-containing resist is applied. At this time, the film thickness of the resist is 50 nm in the flat part. Herein, the phase shifter defect is supposed to be a bump defect. When the resist is formed in a film thickness of 50 nm, the phase difference of the light entering through the film thickness is about 30 degrees. This resist is exposed with electron beam in a region including the periphery of the defect. After electron beam exposure, it is developed. Since the silicon-containing resist is a negative resist, only the region irradiated with electron beam is left over after development. Since the resist has a mild slope, if exposed using this phase shift mask, the bump defect will not be projected.
    Type: Grant
    Filed: March 31, 1993
    Date of Patent: August 22, 1995
    Assignee: Matsushita Electronics Corporation
    Inventor: Hisashi Watanabe
  • Patent number: 5418093
    Abstract: A projection exposure method includes the steps of (a) irradiating a light from a light source on an optical mask, where the optical mask includes a main space which transmits light and has a desired exposure pattern, and a subspace which transmits light and is provided adjacent to the main space, and (b) exposing a photoresist layer by the light which is transmitted through the optical mask via a lens so as to project an optical image of the main space, where the subspace has a narrow width such that the light transmitted through the subspace by itself does not expose the photosensitive layer.
    Type: Grant
    Filed: February 24, 1994
    Date of Patent: May 23, 1995
    Assignee: Fujitsu Limited
    Inventors: Satoru Asai, Isamu Hanyu, Mitsuji Nunokawa
  • Patent number: 5415961
    Abstract: A method of fabricating a cylindrical device comprising having at least one distinct outer layer comprising providing a preformed rigid cylindrical support drum having a predetermined outer circumference, a first end and a second end, providing a flexible belt having an inner circumference at least about 0.05 percent smaller than the outer circumference of the support drum, circumferentially expanding the belt with a flowing fluid under pressure until the circumference of the inner surface of the belt adjacent the first end is stretched to a new dimension at least about 0.
    Type: Grant
    Filed: September 29, 1992
    Date of Patent: May 16, 1995
    Assignee: Xerox Corporation
    Inventors: Robert C. U. Yu, William G. Herbert, William W. Limburg, Satchidanand Mishra, Richard L. Post, Donald C. Von Hoene, Geoffrey M. T. Foley, Abraham Cherian
  • Patent number: 5415960
    Abstract: A method for fabricating a phosphor screen of a cathode ray tube which includes the steps of forming a light absorbing pattern on an inner surface of a panel of the cathode ray tube, applying a slurry of first phosphor on the inner surface of the panel, rotating the panel for drying the slurry of first phosphor around a first axis of rotation, exposing the first phosphor selectively so as to form a first phosphor pattern, applying a slurry of second phosphor on the inner surface of the panel, rotating the panel for drying the slurry of second phosphor around a second axis of rotation, exposing the second phosphor selectively so as to form a second phosphor pattern, applying a slurry of third phosphor on the inner surface of the panel, rotating the panel for drying the slurry of third phosphor around a third axis of rotation, and exposing the third phosphor selectively so as to form a third phosphor pattern, wherein the first, second and third axes of rotation are parallel to one another.
    Type: Grant
    Filed: November 19, 1993
    Date of Patent: May 16, 1995
    Assignee: Sony Corporation
    Inventor: Kouji Fujita
  • Patent number: 5413884
    Abstract: A technique is disclosed for utilizing direct-write electron-beam photolithography and holographic optical exposure to form gratings in optoelectronic structures. The direct-write e-beam process is used to form rectangular grating teeth in a mask substrate, where the mask is then used as a phase mask to transfer the pattern to the optoelectronic device. Advantageously, the utilization of a direct write e-beam technique to form the grating pattern on the photomask allows for the formation of any desired number and location of abrupt phase shifts, multiple grating pitches, alignment fiducials, and any other desired features. Therefore, a single exposure of the direct write e-beam mask allows for a plurality of different grating patterns to be simultaneously printed.
    Type: Grant
    Filed: December 14, 1992
    Date of Patent: May 9, 1995
    Assignee: American Telephone and Telegraph Company
    Inventors: Thomas L. Koch, Frederick W. Ostermayer, Jr., Donald M. Tennant, Jean-Marc Verdiell
  • Patent number: 5411833
    Abstract: Toner and liquid developer compositions for use in color electrophotographic processes are described. The developer compositions display high particle-mediated conductivity and charge and thus give rise to a final print of exceptionally high quality. Methods of manufacturing the toner and developer compositions are also disclosed, as are novel charge control agents and processes for using the various compounds and compositions in consecutive multicolor image development.
    Type: Grant
    Filed: February 10, 1993
    Date of Patent: May 2, 1995
    Assignee: Lommtech International Management Corporation
    Inventor: Ronald Swidler
  • Patent number: 5399450
    Abstract: A color filter formed in accordance with the invention is formed by depositing a thin film of organic pigment an on electrode by electrochemical methods. An organic pigment is included in an aqueous micellar solution that includes a surfactant that has redox reactivity. The surfactant preferably has a metallocene such as ferrocene at the hydrophobic terminal end group. A transparent substrate having a transparent electrode thereon is emersed in the micellar solution. Voltage is applied to the transparent electrode and the organic pigment will form on the transparent electrode. Conductive particles, polymer material or conductive polymer material can be included with or on the pigment. Alternatively, the polymer or conductive polymer can be layered.
    Type: Grant
    Filed: January 18, 1994
    Date of Patent: March 21, 1995
    Assignee: Seiko Epson Corporation
    Inventors: Fumiaki Matsushima, Yoshihiro Ohno, Shigeyuki Ogino, Kuniyasu Matsui
  • Patent number: 5397664
    Abstract: A carrier of light-transmissive material has a mask pattern of light-absorbent material arranged thereon. The carrier comprises first regions and second regions that are not covered by the absorbent material. An optical thickness of the carrier in the first regions differs from an optical thickness in the second regions such that a phase difference of 180.degree..+-.60.degree. exists between light that has traversed the first regions and light that has traversed the second regions. For manufacturing the phase mask, the first regions are produced by isotropic etching of the light-absorbent material and the second regions are produced by anisotropic etching into the carrier.
    Type: Grant
    Filed: September 24, 1993
    Date of Patent: March 14, 1995
    Assignee: Siemens Aktiengesellschaft
    Inventors: Christoph Noelscher, Leonhard Mader
  • Patent number: 5395723
    Abstract: A low melt, low gloss toner resin with low minimum fix temperature and wide fusing latitude contains a linear portion and 20-45% by weight of a cross-linked portion containing high density, cross-linked microgel particles, but substantially free of low density, cross-linked polymer. The resin is particularly suitable for low gloss applications such as black only and highlighting and for high speed fusing, shows excellent offset resistance and wide fusing latitude and superior vinyl offset properties. The resin may be formed by reactive melt mixing.
    Type: Grant
    Filed: September 30, 1992
    Date of Patent: March 7, 1995
    Assignee: Xerox Corporation
    Inventors: Hadi K. Mahabadi, Enno E. Agur, Edul N. Dalal
  • Patent number: 5395733
    Abstract: An image forming layer comprising a polymer which has a component showing UV absorption at 320 nm or higher and a component containing the carboxylic acid (carboxylate) group represented by the following general formula I:--(Y).sub.1 --X--(CH.sub.2).sub.k --COOT (I)wherein X represents sulfur, oxygen, single bond, C.dbd.W or N--U where W represents oxygen or sulfur and U represents an optionally substituted aryl, alkyl group or hydrogen, Y represents an optionally substituted alkylene, arylene, aralkylene group or divalent heterocyclic ring, and T represents a hydrogen, alkali metal, alkaline earth metal or HN(R.sup.1)(R.sup.2)(R.sup.3) where R.sup.1, R.sup.2 and R.sup.3, which may be identical or different, independently represent a hydrogen atom, optionally substituted alkyl or aryl group and R.sup.1, R.sup.2 and R.sup.3 may join together to form a ring structure, k represents 0 or 1 and 1 is 0 or 1, provided that X represents C.dbd.W when k is 0.
    Type: Grant
    Filed: May 10, 1991
    Date of Patent: March 7, 1995
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Kazuo Maemoto, Kouichi Kawamura
  • Patent number: 5394219
    Abstract: A first window portion is provided in a predetermined portion on a substrate where pellicle films of a photomask are not provided, and a second window portion is provided in a predetermined portion on substrate where pellicle films of the photomask are provided. By comparing amounts of exposure luminous flux transmitting first and second window portions it is possible to determine the life of pellicle films and the life of an exposure light source.
    Type: Grant
    Filed: April 30, 1993
    Date of Patent: February 28, 1995
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Miyuki Hirosue
  • Patent number: 5391442
    Abstract: The present invention provides the color pattern forming method wherein the process is simple and therefore the product can be manufactured at a low cost and it is possible to obtain an RGB color filter with superior pattern precision.
    Type: Grant
    Filed: January 14, 1993
    Date of Patent: February 21, 1995
    Assignee: Nippon Paint Co., Ltd.
    Inventors: Hiroshi Tsushima, Iwao Sumiyoshi, Masaaki Yokoyama
  • Patent number: 5391441
    Abstract: Disclosed are phase-shifting masks wherein restriction of light transmission at edges of phase-shifting patterns (e.g., at an edge where a 180.degree. phase-shifting pattern ends on a light transmission region) is avoided, and methods of making such masks. The region of the transparent pattern of the mask, under the edge of the phase-shifting pattern, is made wider than that of the transparent pattern in other regions; moreover, an additional phase-shifting layer is provided at the edge of the phase-shifting pattern, the additional phase-shifting layer having a phase-shift preferably of less than 90.degree., to avoid a 180.degree. phase shift at the edge. Also disclosed is a phase-shifting mask having repaired defects, and a method for repairing defects in phase-shifting masks, using an additional phase-shifting layer.
    Type: Grant
    Filed: February 19, 1993
    Date of Patent: February 21, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Akira Imai, Norio Hasegawa
  • Patent number: 5389485
    Abstract: The present specification discloses a toner for electrophotography.This toner comprises two or more kinds of binder resins, and is characterized in that the surface tension of each of the binder resins and the melt viscosity thereof, both at a temperature of 200.degree. C., are respectively below 30 dyne/cm and 100 poises or more, and the melt viscosity thereof and the storage modulus thereof, both at a temperature of 125.degree. C., are respectively below 5000 poises and below 40000 dyne/cm.sup.2, a toner comprising a surface tension reducing agent and a binder resin. Because the melt viscosity of the binder resin at a temperature of 200.degree. C. is 30 poises or more, a toner having an excellent void resistance can be obtained without a worsening of the fixability and blocking resistance thereof.
    Type: Grant
    Filed: November 24, 1992
    Date of Patent: February 14, 1995
    Assignee: Fujitsu Limited
    Inventors: Yoshimichi Katagiri, Yuzo Horikoshi, Norio Sawatari
  • Patent number: 5389496
    Abstract: Methods and compositions for electroless metallization. In one aspect, the invention is characterized by the use of chemical groups capable of ligating with an electroless metallization catalyst, including use of ligating groups that are chemically bound to the substrate. In a preferred aspect, the invention provides a means for selective metallization without the use of a conventional photoresist patterning sequence, enabling fabrication of high resolution metal patterns in a direct and convenient manner.
    Type: Grant
    Filed: May 17, 1993
    Date of Patent: February 14, 1995
    Assignees: Rohm and Haas Company, United States of America
    Inventors: Jeffrey M. Calvert, Walter J. Dressick, Gary S. Calabrese, Michael Gulla
  • Patent number: 5387485
    Abstract: A phase shift photomask for forming a fine-line pattern with high dimensional accuracy even at different focus positions. The phase shift photomask has a transparent substrate (1) of quartz, for example, and a light-shielding film (2) of chromium, for example, provided on the substrate (1). The light-shielding film (2) is partially removed to form a first opening pattern (4a) and a second opening pattern (4b) with a very small width which is annularly provided in a peripheral region adjacent to the first opening pattern (4a). The light-shielding film (2c) is left in each of the four corners of the second opening pattern (4b). In addition, a phase shifter layer 3 is provided over either of the first or second opening patterns (4a, 4b).
    Type: Grant
    Filed: November 29, 1993
    Date of Patent: February 7, 1995
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Makoto Sukegawa, Naoya Hayashi
  • Patent number: 5387484
    Abstract: A mask and a fabrication method therefor that incorporates a patterned radiation blocking layer such as a second patterned high-reflectivity dielectric coating on the back surface of the mask which also includes a first patterned reflective coating on the front. This second high-reflective dielectric coating referred to as a premask, eliminates most of the laser energy directed onto the mask that leads only to substrate heating without effecting the laser energy transmitted through the open area of the mask. The open areas of the premask are sufficiently larger than those in the mask so not to interfere with the illumination geometry (i.e. forms a greater angle than the illumination numerical aperture).
    Type: Grant
    Filed: July 7, 1992
    Date of Patent: February 7, 1995
    Assignee: International Business Machines Corporation
    Inventors: Fuad E. Doany, Douglas S. Goodman
  • Patent number: 5387486
    Abstract: The present invention relates to a radiation-polymerizable mixture which includes a polymerizable compound, a polymeric binder which has units of methacrylic acid, a methacrylic acid ester and a styrene, the latter in a proportion of 40 to 65% by weight, a finely divided mineral pigment on a silicic acid or silicate basis, a photopolymerization initiator, a compound having at least two epoxy groups in its molecule and a thermal hardener for epoxy groups. The mixture is advantageous, in particular, for producing solder masks and can be cured after exposure to an image and development by heating to about 80.degree. to 150.degree. C. to form a stencil which is resistant under soldering conditions.
    Type: Grant
    Filed: October 27, 1993
    Date of Patent: February 7, 1995
    Assignee: Morton International, Inc.
    Inventors: Michael Emmelius, Walter Herwig, Kurt Erbes, Rudolf Decker