Abstract: A photomask for projecting a transfer pattern onto a wafer having a plurality of regions with different surface levels includes a transparent substrate; a shielding member on the transparent substrate having a plurality of patterns for projection onto respective regions of the wafer; and an optical-path-length varying layer on at least one of the patterns corresponding to a region of the wafer other than a reference region of the wafer for changing the optical path length of light transmitted through the pattern by a length corresponding to the difference in surface level between the corresponding region and the reference region of the wafer.

Abstract: A phase-shifted reticle with patterns proximate each other having inverted phases for the features and phase-shifting elements, and method of fabricating the reticle. Each of the patterns and inverted patterns are structurally identical with regard to the direction of phase shift, so that any focal shift due to phase error is in the same direction for all patterns. In a preferred embodiment, the structurally identical inverted reticle is used to form an array of closely spaced contact or via openings. For a first pattern on the reticle, the feature will be the 0.degree. phase and the phase-shifting rim surrounding that feature will be the 180.degree. phase. All patterns surrounding the first pattern have phase-shifting rims of the 0.degree. phase and features of the 180.degree. phase. In this way, each pattern can form below conventional resolution features in the resist.

Abstract: A method of correcting a pattern defect in a phase shift mask allowing planarization of bump and divot defects in a phase shift mask with high accuracy is disclosed. In the case of a bump defect, the region including the bump defect is irradiated with an FIB and supplied with a deposition gas, thereby forming a planarization film, and then the planarization film is etched back with the FIB. Thereafter, a layer containing ions is removed away using a laser beam. In the case of a divot defect, the region including the divot defect is planarized by application of an SOG film, and then the unnecessary part of the SOG film other than in the region of the divot defect is removed away by etching back to the interface of the SOG film with the FIB and developing the same. Thereafter, the layer containing ions is removed away utilizing a laser beam.

Abstract: The invention is directed to a phase shift photomask for which a film made of a material capable of providing an etching stopper layer that excels in etching selectivity and can interrupt etching surely and automatically, and provides a phase shift photomask at least comprising a substrate 30 and a phase shifter pattern made of a material composed mainly of silicon oxide that is provided on the surface of the substrate directly or with an opaque layer 37 interposed therebetween, said phase shift photomask being characterized in that the surface 30 is provided on the surface with an etching stopper layer 30 that comprises a mixture of Al.sub.2 O.sub.3 with MgO, ZrO.sub.2, Ta.sub.2 O.sub.5 or HfO, or CrO.sub.x, CrN.sub.y, CrC.sub.z, CrO.sub.x N.sub.y, CrO.sub.x C.sub.z or CrO.sub.x N.sub.y C.sub.z, or MgF.sub.2-2x O.sub.y, CaF.sub.2-2x O.sub.y, LiF.sub.2-2x O.sub.y, BaF.sub.2-2x O.sub.y, La.sub.2 F.sub.6-2x O.sub.y or Ce.sub.2 F.sub.6-2x O.sub.

Abstract: The invention relates to a method for forming a resist pattern for dry etching a phase shifter layer in which a phase shifter pattern portion and a portion for protecting the surface of a light-blocking pattern are formed by a single photolithographic step. A light-blocking patter 40 is formed on a phase shifter layer 33, followed by the formation of a positive to negative image reversible resist thin film 41. A given region of the resist thin film 41 that includes a part of the unpatterned region thereof is exposed to ionizing radiation 42. Post-exposure baking for image reversal is carried out. Subsequently, the whole back side of the substrate is exposed to ultraviolet light 44 using the light-blocking pattern as a mask, thereby enabling only an unexposed region of the unpatterned resist to be soluble in a developer. The resist thin film 41 is developed to form a resist pattern 45.

Abstract: The present invention relates to a photosensitive member comprising a charge generating material, a charge transporting material, a binder resin and a specified electronattracting material, preferably further specified hindered phenol compound.

Abstract: An electrophotographic lithographic printing plate precursor capable of well maintaining both the electrophotographic properties and the printing properties is provided, which comprises, at least, a photoconductive layer on one side of a support and an under layer directly under the photoconductive layer, in which the under layer consists of a plurality of layers comprising an outermost layer having a surface resistivity of at most 1.times.10.sup.11 .OMEGA. and an inner layer having a Cobb's water absorbing capacity of at most 15 g/m.sup.2 (45 minute value) or having a Young's Modulus of at most 1000 kg/cm.sup.2.

Abstract: An improved method of fabricating phase shifting masks for semiconductor manufacture includes protecting an opaque layer of the mask during the mask fabrication process with a toughened layer of resist. For forming a Levenson phase shifting mask, an opaque layer is deposited on a transparent substrate. The opaque layer is then patterned using a layer of resist. This layer of resist is toughened and de-sensitized to subsequent patterning and intermediate processing. A phase layer of resist is then deposited on the toughened layer of resist and patterned for etching phase shifting areas in the substrate. During the etching process the opaque layer is protected by the toughened layer of resist. Etching of the phase shifting areas on the substrate can be in stages using a voting technique.

Abstract: A photo mask for detecting misalignment of stepper blades and undesirable pattern array on an wafer comprises: a number of highest limit alignment marks 5 to 8 located in the outside of a field pattern area for forming product dies on the wafer and indicating the highest limits in setting positions of the stepper blades respectively and a number of lowest alignment marks 9,10 and 11 located respectively in three corners of the said outside of the field pattern area and indicating the lowest limits in setting positions of the stepper blades respectively, and forming a predetermined geometrical shape together.

Abstract: In an X-ray exposure method, consideration was made to application of a concept of a phase shift method which is used for a light exposure method, in order to improve the resolution. As a result, phase shift layers made of a material having an appropriate refractivity are provided on side walls of an absorbing pattern of an X-ray mask to improve the resolution by an interference effect. One or more layers made of a material having a refractivity different from that of the absorbing pattern are formed on the side walls of the absorbing pattern of the X-ray mask.

Abstract: A removable bandpass filter layer (22), which is preferably part of a pattern transfer tool (10), improves the resolution of a semiconductor wafer aligner that uses a relatively broad bandwidth radiation source. A narrower bandwidth filter layer provides more complete destructive interference of undesirable diffraction patterns when it is used with a phase-shift pattern transfer tool and removes radiation of longer wavelengths to improve resolution when it is used with a nonphase-shift pattern transfer tool. Using a removable bandpass filter layer, rather than permanently installing a narrow bandpass filter in the aligner, does not affect the speed of patterning layers that do not require the enhanced resolution. The same aligner can thus be used for either high resolution or high throughput without substantial modification to the aligner.

Abstract: Respective phosphor layers (3R), (3G) and (3B) and a light absorption layer (2) are formed on the inner surface of a panel. An intermediate layer (11) is selectively formed on the surfaces of the respective phosphor layers by using a water soluble liquid having photosensitivity and containing water dispersion vinyl polymer emulsion and partial saponification polyvinyl acetate-system photosensitizer and then a metal-backing layer (12) is formed. A color purity of a phosphor screen can be increased and a brightness thereof can be improved.

Abstract: Surface-modified, pyrogenically produced titanium dioxide which is has the following physico-chemical properties:______________________________________ Surface (m.sup.2 /g) 5 to 120 Stamping density (g/l) 50 to 250 Drying loss (%) <5 Annealing loss (%) 3.5 to 15 Carbon content (%) 0.5 to 12 pH 4 to 10.

Abstract: Solid state photodetectors having amorphous silicon photodiode bodies with sloped sidewalls allowing for deposition of high integrity conformal layers thereover are produced by etching the amorphous silicon in a mostly anisotropic etchant in a reactive ion etcher in which the pressure of the etchant is controlled. A photoresist mask having sloped sidewalls is formed over the amorphous silicon to be etched and the pressure of the etchant is selected to produce the desired slope of the sidewall in the photodetector body; at lower pressures a smaller slope is produced in the silicon and at higher pressures a steeper slope is produced in the silicon.

Abstract: The method of electrophotographically manufacturing a screen assembly on an interior surface of a faceplate panel for a color CRT, according to the present invention, includes the steps of sequentially coating the surface of the panel with a conductive solution to form a volatilizable organic conductive layer and then overcoating the conductive layer with a photoconductive solution to form a volatilizable organic photoconductive layer. The conductive layer, comprising a quaternary ammonium polyelectrolyte and a surfactant, provides an electrode for the photoconductive layer and has improved electrical and physical properties compared to prior conductive layers.

Abstract: An improvement is proposed in a frame-supported pellicle, i.e. a thin transparent film of a polymeric resin adhesively bonded to a frame member, used for dust-proof protection of a photomask in a photolithographic patterning work for the manufacture of electronic devices. The improvement comprises using, as the adhesive, an organopolysiloxane-based composition which comprises (a) a perfluoroalkyl-containing diorganopolysiloxane having at least two vinyl groups per molecule, (b) an organohydrogenpolysiloxane having at least one epoxy group and (c) a platinum catalyst for promoting the hydrosilation reaction between (a) and (b). As compared with conventional adhesives, a quite good adhesive bonding strength can be obtained with this adhesive even when the membrane is made from a fluorocarbon group-containing polymeric resin and the adhesive layer obtained therefrom is highly resistant against ultraviolet irradiation to ensure a long serviceable life of the pellicle.

Abstract: The present invention provides a coating agent for an electrophotographic carrier comprising as a major component a copolymer of at least one monomer selected from the organopolysiloxanes represented by the following general formulas 1, 2, and 3 with other polymerizable monomer: ##STR1## wherein the general formulas 1, 2, and 3, R.sup.1 is hydrogen atom or methyl group; R.sup.2 is C.sub.1 -C.sub.10 alkyl or phenyl group; R.sup.3 is R.sup.2 or CH.sub.2 .dbd.C(R.sup.1)COOC.sub.3 H.sub.6 ; n, p, and q are defined as n.gtoreq.3, p.gtoreq.0, q.gtoreq.3, and p<q; and r is an integer of 2-20.The coating agent for an electrophotographic carrier resists the formation of wear, peeling, cracks, and the like, which can also prevent the spent condition from occurring and thus, permits use over a long period of time; and it provides a long-life electrophotographic carrier in which the carrier charge characteristics exhibit low temperature dependency.

Abstract: A photomask comprises light shielding areas with a light shielding layer formed on a mask substrate, and a light transmitting area defined on the mask substrate by the light shielding areas, the light transmitting area being divided in a first area with a 90.degree. phase shifter formed thereon for shifting phase of transmitted light by 90.degree., a second area with a 270.degree. phase shifter formed thereon for shifting phase of transmitted light by 270.degree., and a third area with neither the 90.degree. phase shifter nor the 270.degree. phase shifter formed thereon, the first and the second areas being arranged without being overlapped on each other and with the light shielding areas or the third area located therebetween.

Abstract: A method of preparing composite particles is disclosed, which comprises the steps of dispersing matrix organic resin particles having a polar group on a surface thereof in a hydrophilic organic liquid, water or mixture thereof to prepare a dispersion of the matrix organic resin particles; dispersing a wax in a hydrophilic organic liquid, water or mixture thereof by use of a nonionic surface active agent to prepare an emulsion of the wax; mixing the dispersion of the matrix organic resin particles and the emulsion of the wax in the presence of a surface active agent with a polarity opposite to that of the polar group on the matrix organic resin particles to obtain a dispersion in which finely-divided particles of the wax are caused to adhere to the surface of the matrix particles; and heating the dispersion to fix the finely-divided particles of the wax on the surface of the matrix organic resin particles.

Abstract: A graduation reproduction method in performing the halftone recording due to screen percentage by a light spot of a light beam with the light beam being intensity-modulated on the basis of digital image data in accordance with a binary recording technique. An illumination time value is reduced with respect to the normal illumination time value determined under a recording condition set to record a minimum recording dot on the recording medium. The reduced illumination time is set as a unit illumination time at the time of the recording of the halftone and the secondary scanning speed is reduced in correspondence with the rate of reduction of the unit illumination time relative to the normal illumination time value. Further, in the case that the recording operation is the screen percentage to be effected by the light spot only for the unit illumination time, the exposure is arranged so as not to be effected by the light spot, or arranged to be effected for the normal illumination time value.