Patents Examined by Sylvia MacArthur
  • Patent number: 10344380
    Abstract: A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.
    Type: Grant
    Filed: February 10, 2014
    Date of Patent: July 9, 2019
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Arash Abedijaberi, Shawn George Thomas
  • Patent number: 10332772
    Abstract: An electrostatic chuck (ESC) with a cooling base for plasma processing chambers, such as a plasma etch chamber. In embodiments, a plasma processing chuck includes a plurality of independent edge zones. In embodiments, the edge zones are segments spanning different azimuth angles of the chuck to permit independent edge temperature tuning, which may be used to compensate for other chamber related non-uniformities or incoming wafer non-uniformities. In embodiments, the chuck includes a center zone having a first heat transfer fluid supply and control loop, and a plurality of edge zones, together covering the remainder of the chuck area, and each having separate heat transfer fluid supply and control loops. In embodiments, the base includes a diffuser, which may have hundreds of small holes over the chuck area to provide a uniform distribution of heat transfer fluid.
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: June 25, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kyle Tantiwong, Vladimir Knyazik, Samer Banna
  • Patent number: 10332758
    Abstract: A substrate treatment apparatus for treating a substrate with a chemical liquid in a treatment chamber. The apparatus includes a higher temperature chemical liquid supplying unit, and a rinse liquid supplying unit for rinsing away the higher temperature chemical liquid. A control unit controls a rotation unit for rotating the substrate, as well as the chemical liquid supplying unit and the rinse liquid supplying unit. The higher temperature chemical liquid is supplied while rotating the substrate at a first speed; the rinse liquid is supplied to a center portion of the substrate while rotating the substrate at a lower speed, so that the rinse liquid remains in said center portion; and then the substrate is rotated at a higher speed to spread the rinse liquid over the entire substrate while supplying the rinse liquid onto said center portion.
    Type: Grant
    Filed: July 11, 2014
    Date of Patent: June 25, 2019
    Assignee: SCREEN Holdings Co., Ltd.
    Inventor: Kazuki Nakamura
  • Patent number: 10328549
    Abstract: A polishing head includes a carrier head and a plurality of pressure units arranged on the carrier head. At least two of the pressure units are located on the same circumferential line relative to a center axis of the carrier head.
    Type: Grant
    Filed: December 11, 2013
    Date of Patent: June 25, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shu-Bin Hsu, Ren-Guei Lin, Feng-Inn Wu, Sheng-Chen Wang, Jung-Yu Li
  • Patent number: 10322493
    Abstract: An apparatus for polishing a semiconductor wafer using a pad resurfacing arm and an apparatus therefor are disclosed. Embodiments may include providing a semiconductor wafer on a chemical mechanical polishing (CMP) tool, the CMP tool including a polish pad and a pad resurfacing arm which includes a pad cleaning part, a pad conditioning part, and a slurry dispensing part, dispensing a slurry to the polish pad utilizing the pad resurfacing arm, and polishing the semiconductor wafer utilizing the polish pad.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: June 18, 2019
    Inventor: Jens Kramer
  • Patent number: 10319602
    Abstract: A substrate treatment apparatus which can more efficiently regenerate phosphoric acid which is able to be returned to etching treatment along with such etching treatment as much as possible without using a large facility, that is, a substrate treatment apparatus which treats a silicon substrate W on which a nitride film is formed by a liquid etchant which contains phosphoric acid, which comprises an etching treatment unit (the spin treatment unit 30) which gives a suitable quantity of liquid etchant to each substrate which is fed one at a time so as to etch the substrate and remove the nitride film, a phosphoric acid regenerating unit (the spin treatment unit 30) which mixes liquid etchant used for treatment of one substrate and a suitable quantity of liquid hydrofluoric acid for the amount of the used liquid etchant under a predetermined temperature environment to regenerate the phosphoric acid, and a phosphoric acid recovery unit (the pump 38, phosphoric acid recovery tank 50, and pump 52) which returns the
    Type: Grant
    Filed: September 19, 2014
    Date of Patent: June 11, 2019
    Inventors: Nobuo Kobayashi, Koichi Hamada, Yoshiaki Kurokawa, Masaaki Furuya, Hideki Mori, Yasushi Watanabe, Yoshinori Hayashi
  • Patent number: 10293454
    Abstract: In one embodiment, a polishing head includes an elastic film configured to form pressure rooms to which a pressure fluid is fed, and configured to press a substrate onto a polishing surface with a fluid pressure of the pressure fluid. The head further includes a first magnetic generator provided above a partition wall that separates the pressure rooms. The head further includes a second magnetic generator configured to form at least a portion of the partition wall or provided below the partition wall.
    Type: Grant
    Filed: September 1, 2015
    Date of Patent: May 21, 2019
    Inventors: Takayuki Nakayama, Takashi Watanabe
  • Patent number: 10297474
    Abstract: A chemical supplier includes a chemical reservoir containing a chemical mixture at a room temperature, an inner space of the chemical reservoir being separated from surroundings, a supply line through which the chemical mixture is supplied to a process chamber from the chemical reservoir, an inline heater positioned on the supply line and heating the chemical mixture in the supply line to a process temperature, and a power source driving the chemical mixture to move the chemical mixture toward the process chamber.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: May 21, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Jine Park, Bo-Un Yoon, Jeong-Nam Han, Kee-Sang Kwon, Doo-Sung Yun, Won-Sang Choi
  • Patent number: 10297475
    Abstract: A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.
    Type: Grant
    Filed: April 10, 2014
    Date of Patent: May 21, 2019
    Assignee: Ebara Corporation
    Inventors: Kazuto Yamauchi, Yasuhisa Sano, Hideyuki Hara, Junji Murata, Keita Yagi
  • Patent number: 10290517
    Abstract: Disclosed herein are an etching apparatus and method that are capable of performing an etching process in the state where a flexible film is wound around a drum-type jig, and a flexible film etched by the etching method. The etching apparatus includes a process tank containing an etchant therein, a drum-type jig rotatably provided in the process tank to be immersed into the etchant in a state where a flexible film on which a thin film is formed is wound around the drum-type jig, and a drum-type jig driver configured to rotate the drum-type jig. The etching apparatus has a compact structure to efficiently perform the etching process on the large area flexible film on which the thin film is formed.
    Type: Grant
    Filed: February 17, 2016
    Date of Patent: May 14, 2019
    Inventors: Jaeyun Jeong, Kisoo Kim, Seungmin Cho
  • Patent number: 10290474
    Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.
    Type: Grant
    Filed: September 15, 2014
    Date of Patent: May 14, 2019
    Inventor: Peter Maschwitz
  • Patent number: 10280510
    Abstract: The embodiments described herein generally relate to a substrate support assembly for use in a plasma processing chamber to provide non-uniform gas flow flowing between the substrate support assembly and sidewalls of the plasma processing chamber. In one embodiment, a substrate support assembly includes a substrate support assembly including a substrate support body defining at least a first side of the substrate support body, and a corner region and a center region formed in the first side of the substrate support body, wherein the corner region has a corner width that is smaller than a center width of the center region, the widths defined between a center axis and the first side of the substrate support body.
    Type: Grant
    Filed: March 28, 2016
    Date of Patent: May 7, 2019
    Inventors: Shinichi Kurita, Robin L. Tiner
  • Patent number: 10283389
    Abstract: Disclosed is an adjustable semiconductor processing apparatus and a control method thereof. The apparatus comprises a micro chamber with an upper chamber portion defining an upper working surface and a lower chamber portion defining a lower working surface that are relatively moveable towards each other between an open position and a closed position. When the chamber is in the closed position, a cavity formed by the upper working surface and the lower working surface defines a gap between the upper working surface, the lower working surface and a semiconductor wafer received in the cavity for flow of a processing fluid. A drive device enables the upper working surface of the upper chamber portion or/and the lower working surface of the lower chamber portion to tilt or deform to control flow of chemical agents within the micro chamber.
    Type: Grant
    Filed: December 30, 2011
    Date of Patent: May 7, 2019
    Inventor: Sophia Wen
  • Patent number: 10283384
    Abstract: A method for etching an etch layer formed on a front side of a wafer and a wafer etching apparatus are provided. The wafer etching apparatus includes a first flow channel, a temperature-regulating module, and a second flow channel. The first flow channel is configured to carry a preheated/precooled liquid for controlling a temperature of a wafer. The temperature-regulating module is coupled to the first flow channel. The temperature-regulating module is configured to control a temperature of the liquid in the first flow channel. The second flow channel is configured to carry an etchant for etching an etch layer formed on a front side of the wafer. The method includes: controlling the temperature of the wafer by using the preheated/precooled liquid; and etching the etch layer with the etchant.
    Type: Grant
    Filed: April 27, 2015
    Date of Patent: May 7, 2019
    Inventors: Manish Kumar Singh, Bo-Wei Chou, Jui-Ming Shih, Wen-Yu Ku, Ping-Jung Huang, Pi-Chun Yu
  • Patent number: 10276460
    Abstract: A method of detecting a polishing endpoint includes storing a plurality of library spectra, measuring a sequence of spectra from the substrate in-situ during polishing, and for each measured spectrum of the sequence of spectra, finding a best matching library spectrum from the plurality of library spectra to generate a sequence of best matching library spectra. Each library spectrum has a stored associated value representing a degree of progress through a polishing process, and the stored associated value for the best matching library spectrum is determined for each best matching library spectrum to generate a sequence of values representing a progression of polishing of the substrate. The sequence of values is compared to a target value, and a polishing endpoint is triggered when the sequence of values reaches the target value.
    Type: Grant
    Filed: January 11, 2017
    Date of Patent: April 30, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Dominic J. Benvegnu, Jeffrey Drue David, Boguslaw A. Swedek
  • Patent number: 10272541
    Abstract: A polishing layer analyzer is provided, wherein the analyzer is configured to detect macro inhomogeneities is polymeric sheets and to classify the polymeric sheets as either acceptable or suspect.
    Type: Grant
    Filed: January 22, 2016
    Date of Patent: April 30, 2019
    Assignees: Rohm and Haas Electronic Matericals CMP Holdings, Inc., Dow Global Technologies LLC
    Inventors: Scott Chang, Jeff Tsai, Francis V. Acholla, Andrew Wank, Mark Gazze, William A. Heeschen, James David Tate, Leo H. Chiang, Swee-Teng Chin
  • Patent number: 10269557
    Abstract: An apparatus of processing a semiconductor substrate include a chuck, a holder, a liquid supplying system and a positive pressure unit. The chuck has a principal surface and at least a hole formed thereon. The holder is capable of holding a semiconductor substrate at a position above the principal surface. The liquid supplying system is configured to provide a liquid film onto the principal surface through the hole. The positive pressure unit is configured for providing a gas flow to a space over the chuck. A method of processing a semiconductor substrate is disclosed herein as well.
    Type: Grant
    Filed: October 20, 2015
    Date of Patent: April 23, 2019
    Inventors: Wei-Chih Hsu, Kai-Lin Chuang, Yuan-Chi Chien, Jeng-Huei Yang, Jun-Xiu Liu
  • Patent number: 10259206
    Abstract: Epitaxial lift off systems and methods are presented. In one embodiment a tape is disposed on the opposite side of the epitaxial material than the substrate is used to hold the epitaxial material during the etching and removal steps of the ELO process. In various embodiments, the apparatus for removing the ELO film from the substrates without damaging the ELO film may include an etchant reservoir, substrate handling and tape handling mechanisms, including mechanisms to manipulate (e.g., cause tension, peel, widen the etch gap, etc.) the lift off component during the lift off process.
    Type: Grant
    Filed: March 2, 2011
    Date of Patent: April 16, 2019
    Assignee: ALTA DEVICES, INC.
    Inventors: Brian Brown, Brian Burrows, David Berkstressor, Gang He, Thomas J Gmitter
  • Patent number: 10246782
    Abstract: A method for etching a workpiece may be provided, which may include: determining a plurality of reference etch profiles for a plurality of positions of an etchant dispenser, each reference etch profile corresponding to a respective position of the plurality of positions of the etchant dispenser; determining a thickness profile of the workpiece; determining a respective etch duration for each position of the plurality of positions of the etchant dispenser based on the determined thickness profile and the plurality of reference etch profiles, to reduce a total thickness variation of the workpiece; and dispensing an etchant over the workpiece via the etchant dispenser for the determined respective etch duration for each position of the plurality of positions.
    Type: Grant
    Filed: June 10, 2015
    Date of Patent: April 2, 2019
    Inventors: Karl Pilch, Sonja Muringer
  • Patent number: 10245623
    Abstract: A substrate dry cleaning apparatus, a substrate dry cleaning system, and a method of cleaning a substrate are disclosed. The substrate dry cleaning system includes a substrate support and a reactive species generator. The reactive species generator includes a first conduit defining a first flow channel that extends to an outlet of the first conduit, the outlet of the first conduit facing the substrate support, a first electrode, a second electrode facing the first electrode, the first flow channel disposed between the first electrode and the second electrode, a first inert wall disposed between the first electrode and the first flow channel, and a second inert wall disposed between the second electrode and the first flow channel.
    Type: Grant
    Filed: May 20, 2013
    Date of Patent: April 2, 2019
    Assignee: RAVE N.P., INC.
    Inventors: Gordon Scott Swanson, Ivin Varghese, Mehdi Balooch