Patents Examined by Sylvia MacArthur
  • Patent number: 11373885
    Abstract: A wet etching apparatus is provided. The wet etching apparatus induces an etching chamber, at least one shutter, and at least one spraying pipe. The etching chamber is used for accommodating and etching a substrate, and has an inlet at its front end as well as an outlet at its rear end. The shutter is mounted at the inlet or the outlet by a shaft. The spraying pipe disposed on the shaft overturns with the shutter at the same time. It can effectively remove a large number of crystals of the etching liquid generated at the inlet of the etching chamber and the outlet of the etching chamber by spraying over the inlet of the etching chamber and the outlet of the etching chamber through the spraying pipe, thereby improving an utilization of the apparatus, cleanliness, and a product quality.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: June 28, 2022
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventor: Jianfeng Chen
  • Patent number: 11370079
    Abstract: A reinforcement ring can be placed in a carrier head to abut an inner surface of a perimeter portion of a flexible membrane. The reinforcement ring has a substantially vertical cylindrical portion, a flange projecting outwardly from the bottom of the cylindrical portion, and a lip projecting outwardly from a top of the cylindrical portion. The flange projects outwardly farther than the lip.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: June 28, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Jeonghoon Oh, Jamie Leighton
  • Patent number: 11373886
    Abstract: A substrate processing apparatus includes: a mixer that mixes a first phosphoric acid and an additive serving as raw materials of a processing liquid with each other at a predetermined mixing ratio, thereby preparing a mixed liquid; a mixing ratio corrector that corrects the mixing ratio of the raw materials of the processing liquid; a processing unit that processes a substrate with the processing liquid. The mixer includes a mixing tank that stores the mixed liquid, a first phosphoric acid supply that supplies the first phosphoric acid to the mixing tank, and an additive supply that supplies the additive to the mixing tank. The mixing ratio corrector includes a liquid line through which the mixed liquid is delivered from the mixer to the processing unit, and a second phosphoric acid supply connected to the liquid line so as to supply second phosphoric acid to the liquid line.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: June 28, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Hiroshi Yoshida
  • Patent number: 11355322
    Abstract: Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.
    Type: Grant
    Filed: February 6, 2017
    Date of Patent: June 7, 2022
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Taku Iwase, Masahito Mori, Takao Arase, Kenetsu Yokogawa
  • Patent number: 11355320
    Abstract: A plasma processing apparatus includes a plasma generator provided with a plasma electrode and performs plasma processing on a substrate accommodated in a processing container. At least a region corresponding to the plasma electrode of the plasma generator is formed of synthetic quartz.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: June 7, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Hiroyuki Matsuura
  • Patent number: 11345996
    Abstract: A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: May 31, 2022
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Arash Abedijaberi, Shawn George Thomas
  • Patent number: 11338409
    Abstract: A flexible membrane for a carrier head of a chemical mechanical polisher includes a main portion, an annular outer portion, and three annular flaps. The main portion has a substrate mounting surface with a radius R. The annular outer portion extends upwardly from an outer edge of the main portion and has a lower edge connected to the main portion and an upper edge. The three annular flaps include a first annular flap joined to an inner surface of the main portion at a radial position between 75% and 95% of R, a second inwardly-extending annular flap joined to the annular outer portion at a position between the lower edge and the upper edge, and a third inwardly-extending annular flap joined to the upper edge of the annular outer portion.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: May 24, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Jeonghoon Oh, Jamie Leighton
  • Patent number: 11342190
    Abstract: A substrate processing apparatus includes: a spin base rotatable in a horizontal plane about a centered rotary axis; a holder to hold a substrate above the spin base; a lower surface processing unit to discharge a processing liquid toward a lower surface of the substrate held by the holder. The holder includes: a plurality of first abutting members that abut the substrate from a position obliquely below said substrate and that hold the substrate in a horizontal posture in a position spaced from an upper surface of said spin base; a plurality of second abutting members that abut the substrate from a position lateral to said substrate and that hold said substrate in a horizontal posture in a position spaced from the upper surface of said spin base.
    Type: Grant
    Filed: May 26, 2020
    Date of Patent: May 24, 2022
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Tomonori Fujiwara, Nobuyuki Shibayama, Yukifumi Yoshida, Tetsuya Shibata, Akiyoshi Nakano
  • Patent number: 11342199
    Abstract: A wafer carrier assembly includes a wafer carrier and a fluid passage. The wafer carrier comprises a retainer ring confining a wafer accommodation space. The fluid passage is inside the wafer carrier. The fluid passage includes an inlet and at least an outlet to dispense fluid into the wafer accommodation space.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: May 24, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ming-Tung Wu, Hsun-Chung Kuang
  • Patent number: 11342166
    Abstract: An apparatus for confining plasma within a plasma processing chamber is provided. The plasma processing chamber includes a lower electrode for supporting a substrate and an upper electrode disposed over the lower electrode. The apparatus is a confinement ring that includes a lower horizontal section extending between an inner lower radius and an outer radius of the confinement ring. The lower horizontal section includes an extension section that bends vertically downward at the inner lower radius, and the lower horizontal section further includes a plurality of slots. The confinement ring further includes an upper horizontal section extending between an inner upper radius and the outer radius of the confinement ring and a vertical section that integrally connects the lower horizontal section with the upper horizontal section. The extension section of the lower horizontal section is configured to surround the lower electrode when installed in the plasma processing chamber.
    Type: Grant
    Filed: June 11, 2020
    Date of Patent: May 24, 2022
    Assignee: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Akira Koshiishi, Alexei Marakhatanov
  • Patent number: 11335587
    Abstract: A substrate processing apparatus includes a substrate holding unit which holds and rotates a substrate in a horizontal orientation, a substrate heating unit which has a heating surface which faces the substrate, held by the substrate holding unit, from below and overlaps with an outermost periphery of the substrate in top view, and heats the substrate in a state of contacting a lower surface of the substrate, a transferring unit which transfers the substrate between the substrate holding unit and the substrate heating unit, and a processing fluid supplying unit which supplies a processing fluid toward the substrate held by the substrate holding unit.
    Type: Grant
    Filed: June 2, 2020
    Date of Patent: May 17, 2022
    Inventors: Takashi Ota, Manabu Okutani, Hiroshi Abe
  • Patent number: 11322361
    Abstract: An apparatus that includes a solution bath of a seasoned solution, the seasoned solution containing a mixture of hydrofluoric acid, nitric acid, and acetic acid; and one or more silicon wafers being suspended in a position above the solution bath, wherein at least a portion of the mixture having been used in thinning the one or more silicon wafers.
    Type: Grant
    Filed: August 13, 2019
    Date of Patent: May 3, 2022
    Assignee: International Business Machines Corporation
    Inventors: Da Song, Allan Ward Upham, Cornelius Brown Peethala, Kevin Winstel, Spyridon Skordas
  • Patent number: 11302556
    Abstract: A substrate support for control of a temperature of a semiconductor substrate supported thereon during plasma processing of the semiconductor substrate includes a temperature-controlled base having a top surface, a metal plate, and a film heater. The film heater is a thin and flexible polyimide heater film with a plurality of independently controlled resistive heating elements thermally coupled to an underside of the metal plate. The film heater is electrically insulated from the metal plate. A first layer of adhesive bonds the metal plate and the film heater to the top surface of the temperature-controlled base. A layer of dielectric material is bonded to a top surface of the metal plate with a second layer of adhesive. The layer of dielectric material forms an electrostatic clamping mechanism for supporting the semiconductor substrate.
    Type: Grant
    Filed: April 13, 2020
    Date of Patent: April 12, 2022
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Anthony J. Ricci, Keith Comendant, James Tappan
  • Patent number: 11289324
    Abstract: The inventive substrate treatment method includes: an organic solvent supplying step of supplying an organic solvent having a smaller surface tension than a rinse liquid to the upper surface of a substrate so that rinse liquid adhering to the upper surface of the substrate is replaced with the organic solvent; a higher temperature maintaining step of maintaining the upper surface of the substrate at a predetermined temperature higher than the boiling point of the organic solvent to thereby form a gas film of the organic solvent on the entire upper surface of the substrate including the gap of the minute pattern and to form a liquid film of the organic solvent on the gas film, the higher temperature maintaining step being performed after the organic solvent supplying step is started; and an organic solvent removing step of removing the organic solvent liquid film from the upper surface of the substrate.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: March 29, 2022
    Assignee: SCREEN HOLDINGS CO., LTD.
    Inventor: Manabu Okutani
  • Patent number: 11282731
    Abstract: A wafer cutting device comprises an etching unit, including a wafer holding device and a fluid guide shroud; a gas supply unit; and a chemical reaction liquid supply unit. The wafer holding device includes a carrier disk, which is configured to fix a wafer for cutting and provided with gas apertures, and a gas passage disposed below the carrier disk. The fluid guide shroud is a double-layer structure including an inner layer, an outer layer and a hollow interlayer, located above the wafer holding device and has adjustable spacing with the wafer holding device, and regulates a flow direction of a chemical reaction liquid and protective gases. The gas supply unit supplies a protective gas to the inner layer of the shroud and supplies a protective gas to the carrier disk through the gas apertures. The chemical reaction liquid supply unit supplies the chemical reaction liquid to the interlayer.
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: March 22, 2022
    Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTD
    Inventor: Kaidong Xu
  • Patent number: 11276562
    Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: March 15, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Zheng John Ye, Ganesh Balasubramanian, Thuy Britcher, Jay D. Pinson, II, Hiroji Hanawa, Juan Carlos Rocha-Alvarez, Kwangduk Douglas Lee, Martin Jay Seamons, Bok Hoen Kim, Sungwon Ha
  • Patent number: 11276586
    Abstract: A semiconductor manufacturing apparatus includes a mounting unit arranged to mount an annular member, having an annular shape, to a work substrate including a first substrate and a second substrate bonded to each other so that the annular member surrounds the first substrate. The apparatus further includes a holding unit arranged to hold the work substrate having the annular member mounted thereto. The apparatus further includes a first fluid supply unit arranged to supply a first fluid to the second substrate of the work substrate held by the holding unit.
    Type: Grant
    Filed: February 13, 2019
    Date of Patent: March 15, 2022
    Assignee: KIOXIA CORPORATION
    Inventor: Hidekazu Hayashi
  • Patent number: 11251047
    Abstract: Embodiments of the present disclosure provide for apparatus used to detect clogs in a fluid delivery system during CMP processes and methods of detecting clogs in a fluid delivery system during CMP processes. In particular, embodiments herein provide a flow splitter manifold configured to enable monitoring of the pressure of the polishing fluid disposed therein. Monitoring the fluid pressure in the flow splitter manifold enables the detection of clogs in the delivery lines and/or dispense nozzles that inhibit and/or prevent the flow of polishing fluid therethrough or therefrom.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: February 15, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Roy C. Nangoy, Chad Pollard, Allen L. D'Ambra
  • Patent number: 11231651
    Abstract: Inclination identifying information for identifying inclination of a substrate with respect to a reference plane is detected. Based on the detected inclination identifying information and a first angle, a holding position of the substrate held by a rotation holder is corrected in a direction that is in parallel to the reference plane such that a distance between a portion of the substrate that is to be processed by a peripheral region processor and the center of the substrate is maintained constant. In this state, processing having directivity of inclination with respect to the reference plane by the first angle is performed on a peripheral region of the substrate by the peripheral region processor while the substrate is rotated by the rotation holder.
    Type: Grant
    Filed: April 13, 2018
    Date of Patent: January 25, 2022
    Inventors: Joji Kuwahara, Mitsuya Kusuhara
  • Patent number: 11232959
    Abstract: Substrates can be suppressed from being separated from supporting grooves. A substrate processing apparatus includes a substrate holding unit and a processing tub. The substrate holding unit is configured to hold multiple substrates. The processing tub is configured to store a processing liquid therein. The substrate holding unit includes a supporting body, an elevating device and a restriction unit. The supporting body has multiple supporting grooves and is configured to support the multiple substrates with a vertically standing posture from below in the multiple supporting grooves, respectively. The elevating device is configured to move the supporting body between a standby position above the processing tub and a processing position within the processing tub. The restriction unit is configured to be moved up and down along with the supporting body by the elevating device and configured to restrict an upward movement of the substrates with respect to the supporting body.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: January 25, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takumi Honda, Koji Yamashita, Shinji Tahara, Hironobu Hyakutake