Abstract: The disclosure relates to a distribution body for distributing a process gas relative to a substrate to treat the substrate by means of the process gas, comprising a distribution plate, at least one gas inlet channel, a plurality of gas distribution channels, and a plurality of gas extraction channels, wherein the gas inlet channel extends from a lateral surface of the distribution plate to an interior of the distribution plate, wherein the gas distribution channels branch off from the at least one gas inlet channel and extend to a substrate-facing surface of the distribution plate to supply process gas to the substrate to be treated, wherein the gas distribution channels are directed essentially perpendicular to the substrate-facing surface, and wherein the gas extraction channels extend from the substrate-facing surface to a another surface of the distribution plate to convey gas away from the substrate.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

Abstract: A rotary mount for mounting a part to be coated in a coating apparatus includes a spindle for rotating about a spindle axis, a cam having a mounting portion for mounting the part to the cam, and a cam profile opposite the mounting portion, the cam being pivotally coupled to the spindle for tilting about a cam axis spaced apart from the spindle axis. A follower member engages the cam profile for imparting a tilt of the cam about the cam axis depending on an angle of rotation of the spindle about the spindle axis. The engagement may be mechanical, magnetic, etc. A motor may be provided in place of the stationary cam member for rotating the cam depending on the tilt angle of the spindle axis. The overall configuration allows parts with spatially varying curvature to be more uniformly coated.

Abstract: An apparatus diagnostic apparatus that performs a computation process using data acquired from a semiconductor apparatus manufacturing apparatus having a reference chamber to create reference chamber feature quantity map data by mapping a feature quantity onto a graph having axes representing a plurality of parameters. The apparatus diagnostic apparatus also performs a computation process using data acquired from a semiconductor apparatus manufacturing apparatus having a calibration-target chamber to create calibration-target chamber feature quantity map data by mapping a feature quantity onto a graph having axes representing a plurality of parameters.

Abstract: A first lift pin holder assembly includes a base portion and a stem portion including a ball lock mechanism to hold a lift pin. A second lift pin holder assembly includes a base portion and a stem portion including a fork lock mechanism to hold a lift pin. A slotted ring with coin-slot type slots is arranged on abase of a substrate support assembly. A plurality of the first or second lift pin holder assemblies are retained in the slots using retainers that surround the base portions of the lift pin holder assemblies. Each slot includes an aperture in which a T-shaped retainer is inserted. The top portion of the T-shaped retainer prevents the retainer and the lift pin holder assembly from sliding out of the slot. The lift pin, the lift pin holder assemblies, the retainers, the T-shaped retainer, and the slotted ring are made of ceramic materials.

Abstract: A temperature regulating apparatus includes: a heating section configured to produce a heating liquid; a cooling section configured to produce a cooling liquid; a heating-liquid delivery pipe for delivering the heating liquid to the semiconductor-device manufacturing equipment; a cooling-liquid delivery pipe for delivering the cooling liquid to the semiconductor-device manufacturing equipment; a heating-side return pipe for returning a liquid mixture of the heating liquid and the cooling liquid that have passed through the semiconductor-device manufacturing equipment to the heating section; a cooling-side return pipe for returning the liquid mixture that has passed through the semiconductor-device manufacturing equipment to the cooling section; and at least one of a heating-side heat exchanger configured to exchange heat between the heating liquid and the liquid mixture and a cooling-side heat exchanger configured to exchange heat between the cooling liquid and the liquid mixture.

Abstract: An apparatus for processing an edge surface of a wafer comprises a lower chamber having a first supporting area configured to support the wafer, an upper chamber having a second supporting area, and a first channel formed by the first supporting area, the second supporting area and peripheral areas thereof. The upper chamber is engaged with the lower chamber to position the wafer between the first supporting area and the second supporting area. The first channel is configured to provide a first space to flow one or more chemical fluids for etching an edge area of the wafer. The upper chamber comprises a protrusion part being configured to resist against an outer edge of the wafer in order to align the central axis of the wafer with the central axis of the second supporting area. This disclosure can process the edge of wafers.

Abstract: The inventive concept provides a liquid supply unit which may implement a rotation (swing) of a plurality of nozzles by a single motor, and which has simple structure. The liquid supply unit includes a first nozzle, a second nozzle, a motor, and a first belt. The first nozzle includes a first supply pipe for supplying a liquid, a first rotation part provided at a bottom part of the first supply pipe, and a first electromagnetic clutch provided at a bottom part of the first rotation part. The second nozzle includes a second supply pipe for supplying a liquid, a second rotation part provided at a bottom part of the second supply pipe, and a second electromagnetic clutch provided at a bottom part of the second rotation part. The motor provides a rotation force to the first electromagnetic clutch. The first belt which interlocks a rotation of the first electromagnetic clutch and the second electromagnetic clutch.

Abstract: The present invention is aimed to perform precise monitoring of the processed amount by which a workpiece is processed, and includes a measurement unit that measures a concentration or a partial pressure of a reaction product generated while the workpiece is being processed, and an operation unit that calculates the processed amount of the workpiece using an output value of the measurement unit. The measurement unit includes: a laser light source that irradiates target gas containing the reaction product with a laser beam; a photodetector that detects a laser beam having passed through the target gas; and a signal processing unit that calculates the concentration or the partial pressure of the reaction product based on a detection signal of the photodetector. The operation unit includes a time integration unit.

Abstract: The inventive concept provides a substrate treating method at a treating space. The substrate treating method includes coating a substrate with a first liquid by supplying the first liquid to the substrate; and cleaning a substrate by supplying a second liquid to remove a portion of the first liquid remaining on a specific region of the substrate, the second liquid being different from the first liquid, and wherein an atmosphere of the treating space is exhausted while the coating of the substrate and the cleaning of the substrate is performed, and an exhausting pressure of the treating space during the coating of the substrate is different from an exhausting pressure of the treating space during the cleaning of the substrate.

Abstract: There is provided a technique capable of improving plasma uniformity in a parallel plate-type plasma processing apparatus having a plasma excitation frequency of a VHF band or an UHF band. A plasma processing apparatus according to an exemplary embodiment includes a process container, a stage provided in the process container, a dielectric plate provided above the upper surface of the stage via a space in the process container, and an upper electrode provided above the dielectric plate. An gap is provided between the upper electrode and the dielectric plate, and the width of the gap is non-uniform in a direction in which the dielectric plate extends.

Abstract: A cleaning brush for a semiconductor fabrication process is provided. The cleaning brush includes a core and a brush member. The core includes a circumferential portion and a closed end portion. The circumferential portion surrounds a rotation axis of the cleaning brush and defines an inlet opening for receiving a fluid. The closed end portion is connected to an end of the circumferential portion that is opposite to the inlet opening along the rotation axis. At least one elongated conduit is defined within the core and fluidly communicated with the inlet opening, and the circumferential portion includes a plurality of outlet channels passing therethrough to fluidly communicate with the elongated conduit, the outlet channels being tilted outwardly toward the closed end portion. The brush member is connected to an outer surface of the circumferential portion and covers all of the outlet channels.

Abstract: A plasma processing apparatus including a sample stage; a ring-shaped electrode, made of a conductor, which surrounds the sample stage and to which radio frequency power is supplied; a dielectric cover above the ring-shaped electrode and covering the ring-shaped electrode; a rod suspended and disposed in a through hole disposed on an outer peripheral side portion of the base material having a disc or cylindrical shape and forming the sample stage, and having a connector portion on an upper end portion of the rod connected to the ring-shaped electrode; a beam-shaped member below the sample stage below the through hole with a gap therebetween and extending in a horizontal direction, and which urges the rod upward with respect to the ring-shaped electrode; and a radio frequency power source that is connected to the rod and to the ring-shaped electrode.

Abstract: An EFEM is provided with a circulation path including a substrate transfer space formed inside a housing and a return path configured to return gas flowing from one side to the other side of the substrate transfer space, the EFEM including: a partition wall configured to separate the substrate transfer space and the return path; a capture part provided in the return path having a higher pressure than the substrate transfer space in a state in which the gas circulates through the circulation path, and configured to capture particles contained in the gas flowing through the return path; and a connecting pipe configured to guide the gas flowing inside a predetermined device arranged in the substrate transfer space to the return path, wherein the connecting pipe is connected to the return path on an upstream side of the capture part in a gas flow direction.

Abstract: A substrate processing system includes a processing chamber, a substrate support, a heat source, a gas delivery system and a controller. The substrate support is disposed in the processing chamber and supports a substrate. The heat source heats the substrate. The gas delivery system supplies a process gas to the processing chamber. The controller controls the gas delivery system and the heat source to iteratively perform an isotropic atomic layer etch process including: during an iteration of the isotropic atomic layer etch process, performing pretreatment, atomistic adsorption, and pulsed thermal annealing; during the atomistic adsorption, exposing a surface of the substrate to the process gas including a halogen species that is selectively adsorbed onto an exposed material of the substrate to form a modified material; and during the pulsed thermal annealing, pulsing the heat source multiple times within a predetermined period to expose and remove the modified material.

Abstract: Disclosed is a method for treating a substrate, on which a plurality of reference marks and a pattern are formed. The method includes a process preparing operation, a location information acquiring operation of acquiring information on an actual location of the pattern, and a process executing operation of supplying a treatment liquid to the substrate, and heating the substrate by irradiating laser light to the pattern on the substrate, to which the treatment liquid is applied, the location information acquiring operation includes acquiring information on actual locations of, among the plurality of reference marks, at least three reference marks, and acquiring information of the actual location of the pattern through the information of the actual locations of the reference marks.

Abstract: A vapor deposition device is provided that can suppress an influence on an epitaxial layer which is caused by a position of a lift pin without adjusting an upper and lower heating ratio of a wafer. A reaction chamber is provided with a susceptor on which a carrier is placed, and a carrier lift pin which moves the carrier vertically relative to the susceptor; and the carrier lift pin is installed outside of an outer edge of the wafer when a state where the carrier supporting the wafer is mounted on the susceptor is viewed in a plan view.

Abstract: A method includes controlling a rotational kinetic energy of a rotor assembly of a wafer-platen, wherein a rotational velocity of the wafer-platen is either increased or decreased. The method further includes generating an electrical energy output of the wafer-platen based on decreased rotational kinetic energy of the wafer-platen. The method further includes storing the electrical energy output by the rotator assembly based on the decreased rotational kinetic energy of the wafer-platen.

Abstract: A susceptor used in a deposition reactor provides heat input and controls the build-up of errant deposition. The susceptor heats a substrate tape within the reactor upon which one or more thin films are deposited, particularly high temperature superconductor (HTS) thin films produced in a MOCVD reactor.

Abstract: According to the present invention, a substrate is surrounded in a horizontal plane on an upper surface of a substrate support by a first abutting member located at a first reference position, a second abutting member located at a second reference position, and a third abutting member located at a third reference position. The three abutting members make tiny movements repeatedly to get closer to the substrate gradually while distances from the center of the substrate support are kept equally. While the abutting members make the movements of getting closer to the substrate, the abutting members abut on the substrate successively to move the substrate horizontally toward the center of the substrate support. As a result, at a time when the substrate is nipped with the three abutting members, the center of the substrate is aligned with the center of the substrate support to complete a centering operation.