Abstract: An upper electrode includes a central electrode, a peripheral electrode, multiple dielectric bodies, and multiple power supply electrodes. The central electrode is disposed on a counter surface of the upper electrode facing a substrate support, on which a target object that is a plasma processing target is placed, at a position corresponding to a central portion of the substrate support. The peripheral electrode is disposed on the counter surface to encircle a periphery of the central electrode. The dielectric bodies are laminated between the counter surface and a surface of the upper electrode opposite to the counter surface. The power supply electrode is arranged between the dielectric bodies to electrically connect the central electrode and the peripheral electrode respectively to power supply terminals individually disposed at the surface opposite to the counter surface.

Abstract: A substrate processing apparatus includes a placing table, having a first placing surface on which a substrate is placed and a rear surface opposite to the first placing surface, provided with a first window which allows the first placing surface and the rear surface to communicate with each other and which is configured to transmit light; a first adjusting device configured to hold a first light irradiation unit configured to irradiate light toward the first window and configured to adjust an irradiation position of the light on the rear surface; and a first reflection member, having retroreflection property, disposed at the rear surface of the placing table to enclose the first window, and configured to reflect a part of the light and return reflection light indicating a deviation between the irradiation position of the light and a position of the first window to the first light irradiation unit.

Abstract: There is provided a substrate processing apparatus including: a processing part configured to process a substrate with a processing liquid; and a processing liquid generation part configured to generate the processing liquid supplied to the processing part. The processing liquid generation part includes: a reservoir configured to store the processing liquid; a circulation line through which the processing liquid stored in the reservoir is circulated; a heater configured to heat the processing liquid; and a nozzle provided at a downstream side of the circulation line and has at least one ejection port formed to eject the processing liquid heated by the heater from above a liquid level of the processing liquid stored in the reservoir.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a container configured to contain a substrate, and a pipe configured to supply the container with liquid to treat the substrate. The apparatus further includes an ejector including a first passage where the liquid introduced from the pipe and the liquid introduced from the container are joined and pass through, and a first opening configured to eject the liquid that has passed through the first passage. Furthermore, the first passage has an area where a sectional area of the first passage becomes large as advancing downstream in the liquid.

Abstract: In some embodiments, an ultrasonic tank includes a container, an etching solution tank comprising a working area disposed within the container, and a plurality of ultrasonic transducers arranged about a perimeter of the etching solution tank in a configuration that provides a standard deviation of ultrasonic power within the working area of less than about 0.35.

Abstract: A substrate liquid processing apparatus includes a processing tub configured to store a processing liquid therein; a processing liquid supply configured to supply the processing liquid into the processing tub; a processing liquid drain device configured to drain the processing liquid from the processing tub; and a controller configured to control the processing liquid supply and the processing liquid drain device. The controller calculates, in response to an instruction to change a concentration of a preset component of the processing liquid stored in the processing tub, a drain amount and a feed amount of the processing liquid from/into the processing tub based on information upon a current concentration of the preset component, information upon a concentration increment thereof per unit time and information upon the changed concentration thereof, and controls the processing liquid supply and the processing liquid drain device based on the calculation result.

Abstract: A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a support member to support a substrate, a treatment liquid nozzle to supply a treatment liquid to the substrate positioned on the support member, and a controller to control the treatment liquid nozzle such that the treatment liquid supplied to the substrate is differently discharged in a low-flow-supply section and a high-flow-supply section in which an average discharge amount per hour is more than an average discharge amount per hour in the low-flow-supply section.

Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film. In one embodiment, a plurality of retaining brackets is disposed in a rotational magnetic housing of the magnetic housing systems. Each retaining bracket of the plurality of retaining brackets is disposed in the rotational magnetic housing with a distance d between each retaining bracket. The plurality of retaining brackets has a plurality of magnets removably disposed therein. The plurality of magnets is configured to travel in a circular path when the rotational magnetic housing is rotated around the round central opening.

Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

Abstract: A plasma processing apparatus includes: a first electrode on which a substrate is placed; a plasma generation source that generates plasma; a bias power supply that supplies bias power to the first electrode; a source power supply that supplies source power to the plasma generation source; and a controller. The controller performs a control such that a first state and a second state of the source power are alternately applied in synchronization with a high frequency cycle of the bias power, or a phase within one cycle of a reference electrical state indicating any one of a voltage, a current and an electromagnetic field measured in a power feed system of the bias power, and performs a control to turn OFF the source power at least at a negative side peak of the phase within one cycle of the reference electrical state.

Abstract: Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.

Abstract: A dielectric member that is attached to a lower surface of a stage is provided. The stage includes a base provided with a base channel through which a heat exchange medium passes. The dielectric member includes at least one first component including a passage that is connected to the base channel, and a second component surrounding the first component.

Abstract: A substrate processing apparatus includes a substrate rotator that holds and rotates a substrate including a film of a metal formed on a surface thereof, a first supply that supplies a first processing liquid containing a chelating agent and a solvent toward the substrate, a second supply that supplies a second processing liquid containing water toward the substrate, and a controller that controls the substrate rotator, the first supply, and the second supply. While rotating the substrate by the substrate rotator, the controller supplies the first processing liquid toward the substrate by the first supply to generate a complex containing the metal and the chelating agent, and after the generation of the complex, supplies the second processing liquid toward the substrate by the second supply to dissolve the complex in the second processing liquid.

Abstract: A substrate processing apparatus includes a polishing member having a polishing surface configured to perform a polishing of a main surface of a substrate; a first dressing member having a first dressing surface configured to perform a dressing of the polishing surface; a second dressing member having a second dressing surface configured to perform a dressing of the first dressing surface; a holding member configured to hold the polishing member and the second dressing member; and a driving unit configured to, by moving the holding member, switch a first state in which the first dressing surface and the polishing surface come into contact with each other to perform the dressing of the polishing surface and a second state in which the first dressing surface and the second dressing surface come into contact with each other to perform the dressing of the first dressing surface.

Abstract: Disclosed is a capacitively coupled plasma etching apparatus, wherein an electrically conductive supporting rod where a lower electrode is fixed is connected to driving means, the driving means driving the electrically conductive support rod to move axially; besides, the lower electrode is fixed to the bottom of a chamber body via a retractable sealing part, causing the upper surface of the lower electrode to be hermetically sealed in an accommodation space in the chamber body; an electrical connection part is connected on the chamber body; the radio frequency current in the chamber body returns, via the electrical connection part, to the loop end of a radio frequency matcher.

Abstract: A workpiece processing device includes a workpiece supporting unit configured to support a workpiece so that the workpiece is rotatable around a first axis parallel to a central axis of the workpiece, a cutting unit having a blade configured to cut a surface of the workpiece, a detecting unit configured to calculate a position of a vertex of the surface in a direction along a second axis which is perpendicular to the first axis and parallel to the blade, and a control unit configured to control the workpiece supporting unit so that a cutting position on the surface is located at a vertex in the direction along the second axis, and relatively move the workpiece supporting unit and the cutting unit so that an incision direction of the blade is on a plane defined by the central axis and the cutting position, thereby forming a groove at the cutting position.

Abstract: Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

Abstract: The present invention relates to a system (1) for applying at least two kinds of liquid onto respective targeted areas of a substrate (S). The system (1) includes first and second storage unit (10a, 10b) that accommodate first and second liquids (F1, F2); a pressured gas supply unit (20) that is fluidly connected to the first and second storage unit (10a, 10b); first and second applicator (30a, 30b) that are fluidly connected to the first and second storage unit (10a, 10b); and a controller (40) that is operatively connected to the applicator (30a, 30b). The pressured gas supply unit (20) causes pressure of a pressured gas to act on the liquids (F1, F2) within the storage unit (10a, 10b). The first and second applicator (30a, 30b) each include at least one nozzle (300a, 300b) disposed so as to face the substrate (S).

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit includes a slit door having an arcuate profile and including a first plate coupled to a second plate, wherein the first plate is configured to be coupled to an actuator, and wherein the second plate has a processing volume facing surface that includes silicon.

Abstract: A conditioner of a chemical mechanical polishing (CMP) apparatus includes a disk to polish a polishing pad of the CMP apparatus, a driver to rotate the disk, a lifter to lift the driver, an arm to rotate the lifter, and a connector to connect the driver to the lifter, the driver being tiltable with respect to the lifter.