Patents Examined by Sylvia MacArthur
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Patent number: 11742187Abstract: In a capacitive coupled etch reactor, in which the smaller electrode is predominantly etched, the surface of the larger electrode is increased by a body e.g. a plate, which is on the same electric potential as the larger electrode and which is immersed in the plasma space. A pattern of openings in which plasma may burn is provided in the body so as to control the distribution of the etching effect on a substrate placed on the smaller electrode.Type: GrantFiled: October 17, 2017Date of Patent: August 29, 2023Assignee: EVATEC AGInventors: Johannes Weichart, Jurgen Weichart
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Patent number: 11742180Abstract: A plasma processing method according to an exemplary embodiment includes preparing a substrate in a chamber of a plasma processing apparatus. The substrate is disposed on a substrate support in the chamber. The substrate support includes a lower electrode and an electrostatic chuck. The electrostatic chuck is provided on the lower electrode. The plasma processing method further includes applying a positive voltage to a conductive member when plasma is being generated in the chamber for plasma processing on the substrate. The conductive member extends closer to a grounded side wall of the chamber than the substrate.Type: GrantFiled: July 2, 2020Date of Patent: August 29, 2023Assignee: Tokyo Electron LimitedInventor: Chishio Koshimizu
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Patent number: 11742223Abstract: A substrate processing apparatus comprises a processing tub and a fluid supply. In the processing tub, a processing is performed on multiple substrates by immersing the multiple substrates in a processing liquid. The fluid supply is disposed under the multiple substrates within the processing tub and configured to discharge a fluid to generate a liquid flow of the processing liquid within the processing tub. Further, the fluid supply includes multiple discharge paths configured to discharge the fluid to different regions in an arrangement direction of the multiple substrates.Type: GrantFiled: January 8, 2020Date of Patent: August 29, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Yuji Kimura, Yoshihiro Kai
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Patent number: 11731236Abstract: A method for selecting a template assembly includes: preparing a template assembly in which a template is concentrically attached on a base ring or a base plate having a larger outer diameter than the template, the template having a back pad to hold a workpiece back surface and a retainer ring positioned on the back pad and to hold an edge portion of the workpiece; non-destructively measuring a height position distribution of the retainer ring and the back pad on the template side of the template assembly, where an outer peripheral edge surface of the base ring or the base plate serves as a reference surface; calculating a flatness of the retainer ring and an average amount of step differences between the retainer ring and the back pad from the measured height position distribution; and selecting the template assembly based on the flatness and the average amount of step differences.Type: GrantFiled: March 14, 2017Date of Patent: August 22, 2023Assignee: SHIN-ETSU HANDOTAI CO., LTD.Inventors: Kazuya Sato, Naoki Kamihama, Hiromasa Hashimoto
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Patent number: 11717936Abstract: Embodiments of the present disclosure generally provide methods, polishing systems with computer readable medium having the methods stored thereon, to facilitate consistent tensioning of a polishing article disposed on a web-based polishing system. In one embodiment, a substrate processing method includes winding a used portion of a polishing article onto a take-up roll of a polishing system by rotating a first spindle having the take-up roll disposed thereon; measuring, using an encoder wheel, a polishing article advancement length of the used portion of the polishing article wound onto the take-up roll; determining a tensioning torque to apply to a supply roll using the measured polishing article advancement length; and tensioning the polishing article by applying the tensioning torque to the supply roll.Type: GrantFiled: August 27, 2019Date of Patent: August 8, 2023Assignee: Applied Materials, Inc.Inventors: Dmitry Sklyar, Jeonghoon Oh, Gerald J. Alonzo, Jonathan Domin, Steven M. Zuniga, Jay Gurusamy
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Patent number: 11721565Abstract: A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.Type: GrantFiled: November 21, 2019Date of Patent: August 8, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong Jun Choi, Seok Hoon Kim, Young-Hoo Kim, In Gi Kim, Sung Hyun Park, Seung Min Shin, Kun Tack Lee, Jinwoo Lee, Hun Jae Jang, Ji Hoon Cha
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Patent number: 11715632Abstract: A reaction chamber includes an upper electrode device and a lower electrode device. The lower electrode device is disposed in the reaction chamber for carrying a workpiece to-be-processed. The upper electrode device includes a dielectric cylinder, a coil, an upper power source, an upper electrode plate, a first switch, and a second switch. The dielectric cylinder has a hollow cylindrical structure and is disposed at an upper portion of a chamber wall of the reaction chamber. The coil is arranged around the dielectric cylinder. The upper electrode plate is located above the lower electrode device. The first switch can selectively electively connect the upper power source to a first terminal of the coil or to the upper electrode plate. The second switch can selectively electrically connect a second terminal of the coil to the ground or to the upper electrode plate.Type: GrantFiled: November 8, 2018Date of Patent: August 1, 2023Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.Inventor: Xingcun Li
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Patent number: 11715672Abstract: A method of detecting a polishing endpoint includes storing a plurality of library spectra, measuring a sequence of spectra from the substrate in-situ during polishing, and for each measured spectrum of the sequence of spectra, finding a best matching library spectrum from the plurality of library spectra to generate a sequence of best matching library spectra. Each library spectrum has a stored associated value representing a degree of progress through a polishing process, and the stored associated value for the best matching library spectrum is determined for each best matching library spectrum to generate a sequence of values representing a progression of polishing of the substrate. The sequence of values is compared to a target value, and a polishing endpoint is triggered when the sequence of values reaches the target value.Type: GrantFiled: November 18, 2021Date of Patent: August 1, 2023Assignee: Applied Materials, Inc.Inventors: Dominic J. Benvegnu, Jeffrey Drue David, Boguslaw A. Swedek
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Patent number: 11715650Abstract: A substrate processing apparatus includes a nozzle unit. The nozzle unit includes a line and a nozzle tip provided on a tip end of the line. The line includes a first layer, a second layer and a third layer. The nozzle tip is formed of a corrosion resistant resin having conductivity. The third layer is configured to cover the first layer and the second layer from outside and cover a part of the nozzle tip from outside.Type: GrantFiled: August 4, 2020Date of Patent: August 1, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Yusuke Hashimoto, Jiro Higashijima
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Patent number: 11692269Abstract: A plasma processing apparatus includes: a processing container having a cylindrical shape; a pair of plasma electrodes arranged along the longitudinal direction of the processing container while facing each other; and a radio-frequency power supply configured to supply a radio-frequency power to the pair of plasma electrodes. In the pair of plasma electrodes, an inter-electrode distance at a position distant from a power feed position to which the radio-frequency power is supplied is longer than an inter-electrode distance at the power feed position.Type: GrantFiled: May 26, 2020Date of Patent: July 4, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroyuki Matsuura, Kiyotaka Ishibashi
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Patent number: 11688588Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. A surface floating potential of a substrate placed atop a stage in a positive column of the DC plasma is adjusted and maintained to a reference potential. A periodic biasing signal referenced to the reference potential is capacitively coupled to the stage to control a surface potential at the substrate according to: an active phase for provision of kinetic energy to free electrons in the DC plasma for activation of targeted bonds at the surface of the substrate; a neutralization phase for repelling of the free electrons from the surface of the substrate; and an initialization phase for restoring an initial condition of the surface floating potential.Type: GrantFiled: February 9, 2022Date of Patent: June 27, 2023Assignee: VELVETCH LLCInventors: Stewart Francis Sando, Samir John Anz, David Irwin Margolese, William Andrew Goddard
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Patent number: 11682561Abstract: A retaining ring comprises a generally annular body. The body comprises a top surface, a bottom surface, an outer surface connected to the top surface at an outer top perimeter and the bottom surface at an outer bottom perimeter, and an inner surface connected to the top surface at an inner top perimeter and the bottom surface at an inner bottom perimeter. The inner surface comprises seven or more planar facets. Adjacent planar facets are connected at corners. The inner bottom perimeter comprises straight edges of the planar facets connected at the corners.Type: GrantFiled: April 27, 2021Date of Patent: June 20, 2023Assignee: Applied Materials, Inc.Inventors: Jeonghoon Oh, Steven M. Zuniga, Andrew J. Nagengast, Samuel Chu-Chiang Hsu, Gautam Shashank Dandavate
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Patent number: 11682552Abstract: A system for performing a chemical mechanical polishing (CMP) process is provided. The system includes a CMP tool configured to polish a semiconductor wafer. The processing system further includes a wafer stage configured to support the semiconductor wafer for facilitating the insertion of the semiconductor wafer into, and its subsequent removal from, the CMP tool. The processing system also includes a number of spray nozzles positioned relative to the wafer stage. In addition, the processing system includes a spray generator connected to the spray nozzles and configured to convert a mixture to a mist spray. The processing system further includes a controller configured to activate flow of the mist spray from the spray generator to the spray nozzles to discharge the mist spray over the semiconductor wafer supported by the wafer stage.Type: GrantFiled: October 21, 2019Date of Patent: June 20, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-I Peng, Hsiu-Ming Yeh, Yi-Chang Liu
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Patent number: 11676824Abstract: A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainer ring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.Type: GrantFiled: August 14, 2019Date of Patent: June 13, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: In-kwon Kim, Seung-ho Park, Sang-won Bae, Woo-in Lee, Hyo-san Lee, Sun-jae Jang
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Patent number: 11670515Abstract: Disclosed is a capacitively coupled plasma etching apparatus, wherein a lower electrode is fixed to a lower end of an electrically conductive supporting rod, a retractable electrically conductive part is fixed to the lower end of the electrically conductive supporting rod, wherein the retractable electrically conductive part being extended or retracted along an axial direction of the electrically conductive supporting rod; besides, the lower end of the retractable electrically conductive part is electrically connected with the output end of the radio-frequency matcher via an electrically connection portion, and the loop end of the radio-frequency matcher is fixed to the bottom of a chamber body.Type: GrantFiled: December 16, 2019Date of Patent: June 6, 2023Assignee: ADVANCED MICRO-FABRICATION EQUIPMENT INC. CHINAInventors: Yunwen Huang, Tuqiang Ni, Jie Liang, Jinlong Zhao, Lei Wu
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Patent number: 11668006Abstract: A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.Type: GrantFiled: January 29, 2021Date of Patent: June 6, 2023Assignee: GlobalWafers Co., Ltd.Inventors: Arash Abedijaberi, Shawn George Thomas
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Patent number: 11670486Abstract: Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF-period, and to assist in the re-striking of the bottom plasma during the ON-period.Type: GrantFiled: March 27, 2020Date of Patent: June 6, 2023Assignee: Lam Research CorporationInventors: Alexei Marakhtanov, Rajinder Dhindsa, Eric Hudson, Andrew D. Bailey, III
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Patent number: 11664243Abstract: A substrate processing apparatus includes: a spin chuck, on which a substrate is mounted, the spin chuck rotating the substrate; At least one of a chemical liquid nozzle configured to provide a chemical liquid to a surface of the substrate and a deionzed water nozzle configured to provide a deionized water to a surface of the substrate; and a laser device configured to emit a pulse waver laser beam having a period of 10?9 seconds or less for etching an edge of the substrate.Type: GrantFiled: June 13, 2019Date of Patent: May 30, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-jine Park, Seung-ho Lee, Bo-wo Choi, Yong-sun Ko, Woo-gwan Shim
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Patent number: 11664235Abstract: Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.Type: GrantFiled: October 30, 2017Date of Patent: May 30, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Shang-Yuan Yu, Hsiao Chien-Wen, Jui-Chuan Chang, Shao-Fu Hsu, Shao-Yen Ku, Wen-Chang Tsai, Yuan-Chih Chiang
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Patent number: 11638978Abstract: The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface for polishing or planarizing the substrate; a polymeric matrix forming the polishing layer and including gas-filled or liquid-filled polymeric microelements; and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a tensile strength lower than the tensile strength of the polymeric matrix wherein diamond abrasive materials cut the fluoropolymer to form a reduced number of pad debris particles in the 1 ?m to 10 ?m size range.Type: GrantFiled: June 10, 2019Date of Patent: May 2, 2023Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Nan-Rong Chiou, Joseph So, Mohammad T. Islam, Matthew R. Gadinski, Youngrae Park, George C. Jacob