Patents Examined by Sylvia MacArthur
  • Patent number: 10134614
    Abstract: A projecting/receiving unit (52) projects a laser light to a peripheral portion (30) and receives the reflected light while a liquid is being fed to a substrate (14) and is flowing on the peripheral portion (30). A signal processing controller (54) processes the electric signal of the reflected light to decide the state of the peripheral portion (30). The state of the peripheral portion being polished is monitored. Moreover, the polish end point is detected. A transmission wave other than the laser light may also be used. The peripheral portion (30) may also be enclosed by a passage forming member thereby to form a passage properly. The peripheral portion can be properly measured even in the situation where the liquid is flowing on the substrate peripheral portion.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: November 20, 2018
    Assignee: Ebara Corporation
    Inventors: Mitsuo Tada, Yasunari Suto, Hirofumi Ichihara, Kenya Ito, Tamami Takahashi
  • Patent number: 10134617
    Abstract: The invention relates generally to semiconductor fabrication technology and, more particularly, to chemical vapor deposition (CVD) processing and associated apparatus for addressing temperature non-uniformities on semiconductor wafer surfaces. Embodiments include a wafer carrier for use in a system for growing epitaxial layers on one or more wafers by CVD, the wafer carrier comprising a top plate and base plate which function coordinately to reduce temperature variability caused during CVD processing.
    Type: Grant
    Filed: December 26, 2014
    Date of Patent: November 20, 2018
    Assignee: Veeco Instruments Inc.
    Inventors: Alexander I. Gurary, Eric Armour
  • Patent number: 10115571
    Abstract: Apparatus and methods that provide a reagent gas in a foreline abatement system are provided herein. In some embodiments, a reagent delivery system includes a water tank having an inner volume that holds a reagent liquid when disposed therein, and a heat exchanger having a central opening disposed in the inner volume and configured to keep a top surface of the reagent liquid from freezing when reagent liquid is disposed within the water tank.
    Type: Grant
    Filed: April 27, 2015
    Date of Patent: October 30, 2018
    Inventor: Colin John Dickinson
  • Patent number: 10109466
    Abstract: Provided is a support unit. The support unit includes a support plate having a top surface in which a measurement groove is defined and on which a substrate is placed, and a sensor for measuring a pressure in the measurement groove in the state where the substrate is placed on the support plate. The measurement groove has a main measurement groove that extends from a central area of the support plate up to an edge area of the support plate.
    Type: Grant
    Filed: December 2, 2014
    Date of Patent: October 23, 2018
    Assignee: PSK INC.
    Inventor: Dong Kun Yoo
  • Patent number: 10111313
    Abstract: According to one embodiment, a plasma processing apparatus includes: a processing chamber; a decompression section configured to decompress inside of the processing chamber; a member including a control section to be inserted into a depression provided on mounting side of a workpiece, the control section being configured to thereby control at least one of in-plane distribution of capacitance of a region including the workpiece and in-plane distribution of temperature of the workpiece; a mounting section provided inside the processing chamber; a plasma generating section configured to supply electromagnetic energy to a region for generating a plasma for performing plasma processing on the workpiece; and a gas supply section configured to supply a process gas to the region for generating a plasma. The control section performs control so that at least one of the in-plane distribution of capacitance and the in-plane distribution of temperature is made uniform.
    Type: Grant
    Filed: March 19, 2013
    Date of Patent: October 23, 2018
    Inventors: Takeharu Motokawa, Tokuhisa Ooiwa, Kensuke Demura, Tomoaki Yoshimori, Makoto Karyu, Yoshihisa Kase, Hidehito Azumano
  • Patent number: 10105812
    Abstract: Chemical mechanical polishing can be used for “touch-up polishing” in which polishing is performed on a limited area of the front surface of the substrate. The contact area between the polishing pad and the substrate can be substantially smaller than the radius surface of the substrate. During polishing, the polishing pad can undergo an orbital motion. The polishing pad can be maintained in a fixed angular orientation during the orbital motion. The contact area can be arc-shaped. The contact area can be provided by one or more lower portions projecting downward from an upper portion of the polishing pad. A perimeter portion of the polishing pad can be vertically fixed to an annular member and a remainder of the polishing pad within the perimeter portion can be vertically free.
    Type: Grant
    Filed: July 16, 2015
    Date of Patent: October 23, 2018
    Assignee: Applied Materials, Inc.
    Inventor: Hung Chih Chen
  • Patent number: 10096482
    Abstract: An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.
    Type: Grant
    Filed: August 10, 2015
    Date of Patent: October 9, 2018
    Inventors: Keung Hui, Jin-Ning Sung, Jong-I Mou, Soon-Kang Huang, Yen-Di Tsen
  • Patent number: 10090211
    Abstract: A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled base plate, an upper plate above the base plate, and an annular mounting groove surrounding a bond layer located between the base plate and the upper plate. The mounting groove includes an inner wall, an opening of the mounting groove faces radially outward relative to the inner wall, and the mounting groove includes a step extending downward from the upper plate on an upper wall of the groove or extending upward from the base plate on a lower wall of the groove. An edge seal including a compressible ring is mounted in the groove such that the compressible ring is compressed between the upper plate and the base plate to cause an outer surface of the compressible ring to be biased radially outward relative to the inner wall toward the step.
    Type: Grant
    Filed: December 26, 2013
    Date of Patent: October 2, 2018
    Inventors: Keith William Gaff, Matthew Busche, Anthony Ricci, Henry S. Povolny, Scott Stevenot
  • Patent number: 10081033
    Abstract: A heat exchange system 62 includes heat exchangers 69a and 69b that heat or cool a fluid passing therethrough; a fluid supply unit 81 that supplies the heating target fluid or the cooling target fluid into lower portions thereof; and a fluid discharge unit 82 that discharges the heated fluid or the cooled fluid from upper portions thereof. The fluid supply unit includes inlet lines 85 and 86 through which the fluid is introduced; a first manifold 87 located above the upper end portion of the heat exchangers and connected with the inlet lines; a gas exhaust line 88 that is connected to the first manifold and exhausts a gas mixed in the fluid; a supply line 89 that supplies the fluid from the first manifold. While passing through the heat exchangers from the lower portions toward the upper portions thereof, the fluid is heated or cooled.
    Type: Grant
    Filed: January 7, 2015
    Date of Patent: September 25, 2018
    Inventors: Satoshi Kaneko, Kazuki Motomatsu
  • Patent number: 10076817
    Abstract: A chemical mechanical polishing apparatus includes a plate on which a substrate is received, and a movable polishing pad support and coupled polishing pad which move across the substrate and orbit a local region of the substrate during polishing operation. The load of the pad against the substrate, the revolution rate of the pad, and the size, shape, and composition of the pad, may be varied to control the rate of material removed by the pad.
    Type: Grant
    Filed: July 17, 2014
    Date of Patent: September 18, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Hung Chih Chen, Paul D. Butterfield, Jay Gurusamy, Jason Garcheung Fung, Shou-Sung Chang, Jimin Zhang, Eric Lau
  • Patent number: 10074555
    Abstract: Embodiments of the present invention provide apparatus and methods for supporting, positioning or rotating a semiconductor substrate during processing. One embodiment of the present invention provides a method for processing a substrate comprising positioning the substrate on a substrate receiving surface of a susceptor, and rotating the susceptor and the substrate by delivering flow of fluid from one or more rotating ports.
    Type: Grant
    Filed: March 5, 2013
    Date of Patent: September 11, 2018
    Inventors: Blake Koelmel, Nyi O. Myo
  • Patent number: 10069443
    Abstract: A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck.
    Type: Grant
    Filed: December 19, 2012
    Date of Patent: September 4, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Shigeru Senzaki, Shunichi Mikami, Toshikatsu Tobana
  • Patent number: 10068791
    Abstract: In one embodiment, a wafer susceptor is formed to have portion of the susceptor that is positioned between a wafer pocket and an outside edge of the susceptor to have a non-uniform and/or a non-planar surface. In another embodiment, the non-uniform and/or non-planar surface includes one of a recess into the surface or a protrusion extending away from the surface.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: September 4, 2018
    Inventors: John Michael Parsey, Jr., Hocine-Bouzid Ziad
  • Patent number: 10062586
    Abstract: A chemical fluid processing apparatus and a chemical fluid processing method are described, to treat a substrate with a plurality of chemical fluids such that substantially constant temperature is maintained across a substrate surface. The apparatus includes a discharge nozzle above the substrate to supply a first chemical fluid at a first temperature to a front surface of the substrate, a bar nozzle oriented in a radial direction of the substrate to supply a second chemical fluid at a second temperature to the front surface or a back surface of the substrate, the second temperature being higher than the first temperature, and where the bar nozzle includes a plurality of outlets for discharging the second chemical fluid to a plurality of contacting places on the front surface or the back surface of the substrate at different distances from the center of the substrate.
    Type: Grant
    Filed: July 23, 2014
    Date of Patent: August 28, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Derek W Bassett, Wallace P Printz, Gentaro Goshi, Hisashi Kawano, Yoshihiro Kai
  • Patent number: 10053777
    Abstract: Embodiments described herein provide a substrate processing apparatus that includes a vacuum chamber comprising a first dome and a second dome, a substrate support disposed inside the vacuum chamber between the first and second domes, a collimated energy source arranged in a compartmented housing and positioned proximate the second dome, wherein the second dome is between the collimated energy source and the substrate support. At least a portion of the second dome and the substrate support may be optically transparent to the collimated energy from the collimated energy source.
    Type: Grant
    Filed: March 19, 2014
    Date of Patent: August 21, 2018
    Inventors: Joseph M. Ranish, Aaron Muir Hunter
  • Patent number: 10043686
    Abstract: An apparatus for processing wafer-shaped articles, comprises a closed process chamber providing a gas-tight enclosure. A rotary chuck is located within the closed process chamber, and is adapted to hold a wafer shaped article thereon. A lid is secured to an upper part of the closed process chamber, and comprises a lower surface facing inwardly of the chamber. At least one heating element heats the lower surface of the lid to a desired temperature, so as to prevent condensation of process vapor on the inwardly facing surface of the lid.
    Type: Grant
    Filed: December 31, 2013
    Date of Patent: August 7, 2018
    Assignee: LAM RESEARCH AG
    Inventor: Rainer Obweger
  • Patent number: 10032642
    Abstract: Disclosed is a substrate liquid processing apparatus that includes: a liquid processing unit that performs a liquid processing on a film formed on a surface of a substrate with an etching liquid; an etching liquid supply unit that supplies an etching liquid to the liquid processing unit; and a controller that controls the etching liquid supply unit. The controller is configured to perform a control such that an etching liquid in a state of having a relatively low etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit, and then, an etching liquid in a state of having a relatively high etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: July 24, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Hideaki Sato, Takashi Nagai, Hiromi Hara
  • Patent number: 10030309
    Abstract: A chemical engraving machine to engrave a plate of stainless steel moved along an horizontal direction, said machine comprising a base, an acid liquid circuit adapted to chemically attack said plate of stainless steel at locations where it is not protected by a protection mask, a lower guiding device, an upper guiding device, the lower and upper guiding devices being configured to maintain said plate of stainless steel substantially vertically, and a nozzle support bearing a plurality of spraying nozzles projecting horizontally the acid liquid toward the plate of stainless steel. A method chemically engraves a plate of stainless steel in a vertical position.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: July 24, 2018
    Inventors: Franck Dupuy, Joël Harmand, Inocencio Marcos, François Lapeyre
  • Patent number: 10029343
    Abstract: A polishing apparatus capable of correcting an inclination of a polishing head is disclosed. The polishing apparatus includes: a polishing table configured to support a polishing pad thereon; a polishing head configured to press a substrate against the polishing pad; a rotational shaft coupled to the polishing head; a self-aligning rolling bearing that tiltably supports the rotational shaft; a radial rolling bearing that receives a radial load of the rotational shaft; a detector configured to detect an inclination of the rotational shaft; and an inclination adjusting device configured to adjust the inclination of the rotational shaft.
    Type: Grant
    Filed: May 27, 2015
    Date of Patent: July 24, 2018
    Inventor: Hiroyuki Shinozaki
  • Patent number: 10032654
    Abstract: A substrate treatment apparatus is used for treating a major surface of a substrate with a chemical liquid. The substrate treatment apparatus includes: a substrate holding unit which holds the substrate; a chemical liquid supplying unit having a chemical liquid nozzle which supplies the chemical liquid onto the major surface of the substrate held by the substrate holding unit; a heater having an infrared lamp to be located in opposed relation to the major surface of the substrate held by the substrate holding unit to heat the chemical liquid supplied onto the major surface of the substrate by irradiation with infrared radiation emitted from the infrared lamp, the heater having a smaller diameter than the substrate; and a heater moving unit which moves the heater along the major surface of the substrate held by the substrate holding unit.
    Type: Grant
    Filed: September 23, 2014
    Date of Patent: July 24, 2018
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Sei Negoro, Ryo Muramoto, Toyohide Hayashi, Koji Hashimoto, Yasuhiko Nagai