Abstract: A substrate transfer module that can prevent corrosion of components, adhesion of particles to the substrate, and increases in the manufacturing cost and the size of the substrate transfer module. A substrate transfer module is connected to a substrate processing module. The substrate processing module implements desired processing on a substrate. A substrate transfer device transfers a substrate and includes a holding unit and a moving unit. The holding unit holds the substrate, and the moving unit moves the holding unit. A transfer chamber houses the substrate transfer device in an interior thereof that is isolated from an external atmosphere. An isolation device isolates at least the holding unit and the substrate held by the holding unit from an interior atmosphere of the transfer chamber.

Abstract: A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a light stable polymeric endpoint detection window, comprising: a polyurethane reaction product of an aromatic polyamine containing amine moieties and an isocyanate terminated prepolymer polyol containing unreacted —NCO moieties; and, a light stabilizer component comprising at least one of a UV absorber and a hindered amine light stabilizer; wherein the aromatic polyamine and the isocyanate terminated prepolymer polyol are provided at an amine moiety to unreacted —NCO moiety stoichiometric ratio of <95%; wherein the light stable polymeric endpoint detection window exhibits a time dependent strain of ?0.02% when measured with a constant axial tensile load of 1 kPa at a constant temperature of 60° C. at 100 minutes and an optical double pass transmission of ?15% at a wavelength of 380 nm for a window thickness of 1.

Abstract: Provided is a spin head for supporting a substrate. The spin head includes a rotatable body, and chuck pins protruding upward from the body and configured to support an edge of a substrate placed at the body when the body is rotated. Each of the chuck pins includes a vertical rod vertically disposed at the body, and a support rod extending from a side of the vertical rod and configured to make contact with the edge of the substrate placed at the body when the body is rotated. When the substrate is rotated, the vertical rod is spaced apart from the edge of the substrate. The contact portion includes a streamlined side surface. The support rod includes a contact portion. The contact portion tapers toward the end of the support rod when viewed from the top of the support rod.

Abstract: There is provided a substrate support device capable of preventing powder dust from being produced. A thermoconductive intermediate member is interposed between a base table and a substrate support table and has a communication aperture path for communicating the aperture path of the base table with the aperture path of the substrate support table. An elastic member such as bellows tube is disposed in the communication aperture path of the thermoconductive intermediate member, for insulating the thermoconductive intermediate member from the inert gas which flows through the communication aperture path.

Abstract: The present invention generally includes a shadow frame with alignment inserts that may permit the shadow frame to be properly aligned on the susceptor. The shadow frame may have one or more alignment inserts. The alignment inserts may be coupled to a cavity formed in the bottom surface of the shadow frame. The alignment inserts may be shaped to receive an alignment button that may be present on the susceptor. Thus, as the susceptor raises to the processing position and retrieves the shadow frame, the shadow frame may align properly on the susceptor.

Abstract: Apparatus and methods for handling workpieces in a processing system. The workpiece vertical lift mechanism (200), which is disposed inside a process chamber (40) of the processing system, is adapted to transfer a workpiece (55) to and from a pedestal portion (286) of an electrode (24). The pedestal portion (286) is configured to support the workpiece (55) during processing. The workpiece vertical lift mechanism (200) including a workpiece fixture (290) movable relative to the pedestal portion (286) between a first position in which the workpiece fixture (290) holds the workpiece (55) in a non-contacting relationship with the pedestal portion (286) and a second position in which the pedestal portion (286) projects above workpiece fixture (290) so as to transfer the workpiece (55) from the workpiece fixture (290) to the pedestal portion (286).

Abstract: Magnetic clips for use with a substrate holder for holding a substrate in a processing chamber of a plasma treatment system. The clip includes first and second body members each having a clamping surface and a magnet. The first body member is configured to be mechanically connected with the substrate holder. The second body member is pivotally connected by a hinge with the first body member for movement relative to the first body member between closed and opened positions. In the closed position, an edge region of the substrate is positioned between the clamping surfaces. In the opened position, the edge region is released. The magnet on the second body member magnetically attracts the magnet on the first body member, when the second body member is in the closed position, to apply a force that restrains movement of the edge region of the substrate relative to the clamping surfaces.

Abstract: A substrate treating apparatus for performing a predetermined treatment of substrates with a treating liquid. The apparatus includes a treating tank for storing the treating liquid; a lifter having holding elements for holding the substrates, and vertically movable between a standby position above the treating tank and a treating position inside the treating tank; lower nozzles arranged on opposite sides at a bottom of the treating tank for supplying the treating liquid; upper nozzles arranged above the lower nozzles for supplying the treating liquid toward the holding elements of the lifter; and a control device for controlling a flow ratio of the treating liquid between the upper nozzles and the lower nozzles according to the treatment.

Abstract: A semiconductor processing apparatus includes a reaction chamber, a movable susceptor, a movement element, and a control system. The reaction chamber includes a baseplate. The baseplate includes an opening. The movable susceptor is configured to hold a workpiece. The movable element is configured to move a workpiece held on the susceptor towards the opening of the baseplate. The control system is configured to space the susceptor from the baseplate by an unsealed gap during processing of a workpiece in the reaction chamber. Purge gases may flow through the gap into the reaction chamber. Methods of maintaining the gap during processing include calibrating the height of pads and capacitance measurements when the susceptor is spaced from the baseplate.

Abstract: A substrate holder comprises a generally circular planar body, the body having greater than or equal to two pairs of diametrically opposed, parallel flat edges, and wherein the substrate holder is configured to fit on a generally circular susceptor within a processing chamber. In some embodiments the substrate holder has four pairs of diametrically opposed, parallel flat edges, whereby the substrate holder is substantially octagonal. Furthermore, in some embodiments the substrate holder covers less than eighty percent of the susceptor area. A method of processing a substrate using the substrate holder includes: loading the substrate into a recess in the substrate holder; transferring the substrate holder through a loadlock into the processing chamber, the substrate holder being presented with a smallest cross-section aligned for passage through the loadlock; placing the substrate holder on the susceptor; and processing the substrate. The substrate holder may carry a plurality of substrates.

Abstract: A reaction tube for a semiconductor process for performing a heat process on a plurality of target objects stacked at intervals under a vacuum state is integrally made of an electrically insulating and heat-resistant material. The reaction tube includes a cylindrical sidewall that has a load port at a lower end for loading and unloading the target objects to and from the reaction tube, and a circular ceiling wall that closes an upper end of the sidewall and has a flat inner surface extending in a direction perpendicular to an axial direction of the sidewall. The ceiling wall has an annular groove formed in a peripheral region of an outer surface along the sidewall.

Abstract: A wafer spin chuck and an etcher using the same are provided. According to an aspect of the present invention, there is provide a wafer spin chuck device comprising: a spin body which spins a wafer; and a stationary body which holds the spin body and is under the spin body with a space between the spin body and the stationary body, wherein the stationary body includes a blocking unit which blocks the space with a fluid.

Abstract: An etching apparatus includes: an etching chamber; a piping unit disposed in an upper portion of the etching chamber and including a plurality of nozzles via which an etchant is sprayed; a substrate mask disposed below the piping unit; and a transfer unit disposed below the substrate mask and used to transfer a substrate. The substrate mask interposed between the piping unit including the nozzles and the substrate has a mesh structure or a plurality of holes or slits. Thus, the generation of microbubbles can be prevented during a wet etching process so that a thin layer formed on the substrate can be etched at a uniform etch rate. Also, a lift unit having a fixing unit may be disposed on a lateral surface of the substrate mask. The lift unit moves the substrate mask up and down so as to obtain a uniform etch rate.

Abstract: An atomic layer growing apparatus includes a film forming chamber (101) in which the vapor phase growth of a film is performed, a substrate table (102) having a heating mechanism accommodated in the film forming chamber (101), and an exhaust mechanism (104). The atomic layer growing apparatus also includes a material supply unit (105) including a material vaporizer (151), two buffer tanks, i.e., a buffer tank A (152a) and buffer tank B (152b), a fill valve A (153a) and supply valve A (154a) of the buffer tank A (152a), a fill valve B (153b) and supply valve B (154b) of the buffer tank B (152b), an injection control valve (155), and a control unit (156) which controls the opening/closing of each valve.

Abstract: A plasma etch reactor for plasma enhanced etching of a workpiece such as a semiconductor wafer includes a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes a first process gas inlet coupled to receive predominantly or pure oxygen gas and a second process gas inlet coupled to receive a polymerizing etch process gas. The reactor has a ceiling plasma source power electrode including a center circular gas disperser configured to receive a process gas from the first process gas inlet and to distribute the process gas into the chamber over the workpiece, and an inner annular gas disperser centered around the center gas disperser configured to receive the process gas from the second process gas inlet and to distribute the process gas into the chamber over the workpiece through an inner plurality of injection ports.

Abstract: Disclosed is a substrate processing apparatus, including: a chamber, made of a metal, to form a processing space for processing a substrate; at least one rod-like heating body to heat the substrate; and a tube body, made of a material different from that of the chamber, to accommodate the heating body therein, wherein an outer diameter of the tube body on a processing space side in a penetrating portion where the tube body penetrates a wall of the chamber is set to be smaller than an outer diameter of the tube body on an outer side of the chamber in the penetrating portion.

Abstract: A plasma processing chamber that enables an amount of attached polymer to be controlled easily with a simple construction. A vessel 11 houses a semiconductor wafer W. A susceptor 12 is disposed in the vessel 11 and is connected to a lower electrode radio frequency power source 20. In a plasma processing chamber 10, RIE and ashing can be carried out on the semiconductor wafer W using plasma produced from processing gases introduced into the vessel 11. A side wall member 45 is disposed in the vessel 11 and exposed to the plasma. A potential of the side wall member 45 is set to either a floating potential or a ground potential in accordance with which of RIE and ashing is carried out.

Abstract: The invention relates to an apparatus for the deposition of one or more layers on a substrate (4), which comprises a process chamber (2) which is arranged in a reactor housing (1) and has a heatable bottom (3) on which the substrate rests and a lid (5) extending parallel to the bottom (3) and also a gas inlet facility (6) for introduction of process gases. The distance (H) between the process chamber lid (5) and the process chamber bottom (3) can be reduced to virtually zero. A cooling apparatus (7) by means of which the process chamber lid (5) is cooled in the process position during deposition of the layers is provided above the process chamber lid (5), with the distance between the cooling apparatus (7) and the process chamber lid (5) increasing as the distance (H) between the process chamber lid (5) and the process chamber bottom (3) is reduced.

Abstract: Process chamber shields having specially profiled edges exhibit increased lifetime in PVD and CVD deposition chambers. Edge profiling reduces flaking and delamination of materials deposited onto the shields, thereby prolonging shield life, and, consequently, reducing costs associated with deposition. In one embodiment, a shield having an edge portion terminating in a rounded tip, where the tip has high curvature and a small thickness, is provided. In another aspect, a shield having a concave portion connecting with an edge portion, where an upper (inner) surface of the edge portion forms a tangent plane to the upper (inner) concave surface of the concave surface, is provided. In yet another aspect, a shield with a tapered edge portion is provided. Shields, having profiled edges in accordance with these aspects and in accordance with combinations of these aspects, can better support deposited films, particularly films containing compressively stressed materials, such as metal nitrides.

Abstract: In one aspect, a roll-to-roll substrate transfer apparatus is provided that includes: a feed roll and a take-up roll between which a printed circuit board substrate extends; and a plurality of drive roller rows transmitting motive power to the substrate for moving the substrate in a transferring direction, each drive roller row of the plurality includes a roller axis arranged in a direction perpendicular to the transferring direction of the substrate, and a plurality of spaced-apart drive rollers on the roller axis, wherein drive rollers of one drive roller row are arranged in spaces between drive rollers of adjacent drive roller rows. In other aspects, a wet etching apparatus and an apparatus for manufacturing a printed circuit board that include the roll-to-roll substrate transfer apparatus are provided.