Abstract: A semiconductor wafer processing and analysis apparatus (20) includes a processing micro chamber (22) for closely receiving a semiconductor wafer (27) therein. The chamber may be opened for loading and removing the semiconductor wafers and then closed for processing of the wafer wherein chemical reagents and other fluids are introduced into the chamber. Small clearances are provided between the upper surface, the lower surfaces, and the perimeter edge of the wafer and the corresponding portions of the processing chamber. A high-speed collection system is provided for collecting and removing the spent reagents and fluids from the chamber for either on-line or off-line analysis or for waste treatment.

Abstract: An apparatus for applying different amounts of pressure to different locations of a semiconductor device structure or other substrate during polishing thereof. The apparatus is configured to be associated with a wafer carrier of a polishing apparatus and includes pressurization structures configured to individually apply pressure to a major surface of the semiconductor device structure during polishing thereof. Systems including the pressure application apparatus, as well as differential pressure application methods and polishing methods are also disclosed.

Abstract: A bevel unit comprises CCDs and processing liquid nozzles, and the CCDs take an image of a circumferential edge surface of a substrate. An image processing part detects the distances between the circumferential edge surface of the substrate and the processing liquid nozzles by image processing the signals from the CCDs. A control unit compares thus detected distances between the circumferential edge surface of the substrate and the processing liquid nozzles with set distances from the circumferential edge surface of the substrate to the processing liquid nozzles which are set in a recipe so as to be a desired rim etching width, and calculates an amount of displacement between the detected distances and the set distances. In accordance with the amount of displacement, the control unit activates motors and accordingly positions the bevel unit.

Abstract: A surface treatment device (10) is provided for applying a surface treatment medium to an article (60). The device comprises an application member (12, 14) for holding and applying the surface treatment medium to the article. The device has a securing arrangement (40) for securing the application member to the article.

Abstract: A substrate holding apparatus has a substrate holder body with a substrate holding side facing a polishing surface and holding a substrate on the substrate holding side and a retainer ring fixedly secured to the substrate holder body. The retainer ring is arranged to surround an outer periphery of the substrate held by the substrate holder body so that the retainer ring engages with the polishing surface radially outside the substrate as the polishing of the substrate is effected. The substrate holder body is provided with a membrane having inside and outside surfaces. The inside surface cooperates with a surface of the substrate holder body to define a fluid pressure chamber to which a fluid pressure is applied. The outer surface engages with the substrate held by the substrate holder body.

Abstract: A ring mechanism, comprising a focus ring and divided cover rings surrounding a wafer W placed on a loading table (lower electrode) mounted in a processing chamber, wherein a ring-shaped clearance ?1 is provided between the divided rings to spread plasma to the radial outside of the focus ring to allow plasma to get therein, whereby a potential difference between the wafer W and the focus ring can be eliminated to prevent arc discharge by plasma from occurring between the wafer W and the focus ring.

Abstract: An apparatus and a method comprising same for removing metal oxides from a substrate surface are disclosed herein. In one particular embodiment, the apparatus comprises an electrode assembly that has a housing that is at least partially comprised of an insulating material and having an internal volume and at least one fluid inlet that is in fluid communication with the internal volume; a conductive base connected to the housing comprising a plurality of conductive tips that extend therefrom into a target area and a plurality of perforations that extend therethrough and are in fluid communication with the internal volume to allow for a passage of a gas mixture comprising a reducing gas.

Abstract: Disclosed are a polishing device and polishing method for forming a wafer with high flatness using a CMP process. For the polishing of the wafer, a polishing device including a chuck section and a polishing member having a needle member is used. In the polishing, the wafer is fixed on the chuck section and then, a working fluid containing no abrasive grains is supplied to a wafer surface as well as the needle member is pressed against the wafer surface and is caused to rapidly vibrate. By doing so, the needle member tip is caused to vibrate to rub the wafer surface, thereby performing the polishing. As a result, dishings due to asperities on the wafer surface or scratches extending over a wide range are prevented from occurring, so that the wafer with high flatness can be obtained.

Abstract: An apparatus for positioning a substrate support within a processing chamber is provided. In one embodiment, an apparatus for positioning a substrate support includes a yoke comprising a curved surface with a first slot formed therethrough, a base comprising a first surface adapted to support the substrate support and a curved second surface, wherein the curved second surface mates with the curved surface of the yoke and a first slot is formed through the curved second surface of the base, and a first threaded member disposed through the first slot in the yoke and the first slot in the base.

Abstract: A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.

Abstract: Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers.

Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

Abstract: A polishing apparatus has a plurality of polishing units. Moving mechanisms for moving top rings between polishing positions on polishing surfaces and wafer receiving/delivering positions are provided in each of the polishing units. Linear transporters are provided for transferring a wafer between a plurality of transferring positions including the wafer receiving/delivering positions. Pushers for receiving and delivering the wafer between the linear transporters and the top rings are provided at the transferring positions as the wafer receiving/delivering positions.

Abstract: This application discloses a practical plasma processing apparatus capable of plasma confinement without plasma-density non-uniformity and electric power loss. The apparatus comprises a plasma shield that surrounds a plasma generation region to prevent plasma from diffusing. The shield has at least one opening. The apparatus comprises a diffusion prevention electrode for preventing the plasma from diffusing through the opening of the plasma shield. The surface of the plasma shield exposed to the plasma is made of insulator. The diffusion prevention electrode is located where electrons diffusing toward the opening or having diffused through the opening from the plasma flow into itself.

Abstract: A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.

Abstract: A carrier head for chemical mechanical polishing of a substrate includes a base and a flexible membrane extending beneath the base. The flexible membrane includes a central portion with an outer surface providing a substrate receiving surface, a perimeter portion connecting the central portion to the base, and at least one flap extending from an inner surface of the central portion. The flap divides a volume between the flexible membrane and the base into a plurality of chambers, and the flap includes a laterally extending first section and an angled second section extending beneath the first section and connecting the laterally extending first section to the central portion.

Abstract: A substrate processing apparatus comprises a spin chuck holding and rotating a substrate and an atmosphere blocking member, corresponding in planar shape and size to the substrate, arranged oppositely and proximately to the upper surface of the substrate and formed with a processing solution discharge port and a gas discharge port discharging a processing solution and gas to the central portion of the upper surface of the substrate respectively. The atmosphere blocking member is formed with an outer gas discharge port outside the gas discharge port in plan view for discharging the gas to the upper surface of the substrate. The outer gas discharge port is so formed on the atmosphere blocking member that an arrival position of the gas discharged from the outer gas discharge port is closer to the center of the upper surface of the substrate held by a spin base than an intermediate portion between the center and the outer peripheral edge of the upper surface.

Abstract: An etching apparatus for substrates includes an etching tank including an etching solution, a cassette having a plurality of substrates mounted therein and which is installed inside the etching tank, a porous plate installed on a lower surface of the cassette and a plurality of discharge sections provided in the porous plate corresponding to the substrates and each of the discharge sections having a plurality of discharge ports. The etching apparatus further includes a plurality of first lines connected to the discharge ports respectively, and supplied with a gas to provide bubbles to the substrates through the discharge ports. The first lines are divided into a plurality of groups, and at least one group is supplied with a gas having a pressure different from a pressure of a gas supplied to other groups.

Abstract: An apparatus for manufacturing a semiconductor or liquid crystal has, within a reaction chamber 1 to which a reactive gas is supplied, a ceramic holder 2 having a resistive heating element 7 embedded therein; and further comprises a ceramic cylindrical support member 3 one end of which supports the ceramic holder 2 and the other end of which is fixed to a portion of the reaction chamber 1, and an inert gas supply tube 4 and inert gas evacuation tube 5 each having an opening inside the cylindrical support member 3. It is preferable that the inert gas within the cylindrical support member 3 be maintained at less than 0.1 MPa (one atmosphere). By means of such an arrangement, oxidation and corrosion of electrodes provided on the rear surface of the ceramic holder can be prevented, without an oxidation-resistant seal or corrosion-resistant seal being applied.

Abstract: Disclosed herein are an apparatus and method for manufacturing a flat panel display device. The apparatus and method for manufacturing a flat panel display device contribute to a compact apparatus for etching a substrate and damage or breakage prevention of the substrate during the transfer of the substrate by virtue of stoppers. The etching apparatus comprises a loader for loading or unloading a substrate, an etching device for etching the substrate into a desired shape, a DI rinsing device for rinsing fine particles and etchant generated during the etching process from the etched substrate, an air knife for drying the rinsed substrate, and one or more turn stages provided at one or more locations between the above respective devices, and adapted to change a transfer direction of the substrate.