Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, in which a mask is kept at a defined short distance to the wafer-shaped article such that liquid can be retained between the mask and the defined area of the wafer-shaped article by capillary forces.

Abstract: Incorporation of a sensor, such as an optical or laser based sensor, into a wafer edge processing unit, such as a WEE unit or mechanism. This sensor enables the WEE unit to be referenced to the wafer edge. Specifically, the sensor can be used to place a WEE unit in a fixed but accurate location at the beginning of the wafer edge expose process. Another approach is to have the WEE drive controller actively follow the edge of the wafer as it rotates during the WEE process, which has the advantage of compensating for any wafer centering errors as well as diameter and placement errors. In yet another approach, the edge sensor is used to sense and track the edge of a previous layer WEE pattern. The sensor can also facilitate the measuring of a distance from a wafer edge to a WEE edge feature.

Abstract: A substrate receiving apparatus and a method thereof that prevents substrate damage from occurring when a substrate is loaded/unloaded on/from a cassette. The present invention includes a cassette having a plurality of plates inside so as to receive a plurality of substrates; a cassette loading unit uploading/downloading the cassette; a port supporting the cassette loading unit; and a plurality of auxiliary plates inserted inside the cassette from outside. The method includes downloading a cassette so as to move substrates from plates of the cassette to auxiliary plates, unloading and loading the substrates placed on the auxiliary plates from/on the cassette, and uploading the cassette so as to move the substrates from the auxiliary plates to the plates of the cassette.

Abstract: A system and method for processing substrates that achieves isothermal and uniform fluid flow processing conditions for a plurality of substrates. In one aspect, the invention is a system and method that utilizes matching the emissivity value of the surfaces of a process chamber that oppose exposed surfaces of the substrates with the emissivity value of the exposed surfaces to achieve isothermal conditions throughout a substrate stack. In another aspect, the invention is system and method of processing substrates in a process chamber that exhibits excellent fluid flow uniformity by eliminating cavities or geometrical irregularities in the process chamber profile due to substrate loading openings. In yet anther aspect, the invention is a system and method of processing substrates wherein the process chamber comprises a liner and a shell, the liner constructed of a highly thermally conductive material, such as carbon, and the shell is constructed of a non-porous material, such as stainless steel.

Abstract: An apparatus (100) for spraying an etchant solution on a preformed printed circuit board (30) includes a number of feed pipes (40) for supplying the etchant solution and a number of nozzles (45) mounted on the feed pipes. Each of the feed pipes has a middle portion (402) and two end portions (401). The middle portions of the feed pipes are located on a first plane and the end portions of the feed pipes are located on a second plane parallel to the first plane. The number of nozzles are mounted on the middle portion and the two end portions of each feed pipe. The number of nozzles are in fluid communication with the feed pipes.

Abstract: On the top surface of a substrate, an atmosphere blocker plate, of which plan size is equal or larger than the substrate size, is disposed opposing to the top surface of the substrate. In the rim portion of the atmosphere blocker plate, a vertical through hole is formed so that a nozzle can be inserted into the hole. Nozzle move mechanism moves the nozzle to insert the nozzle to the through hole and position it to the opposing position that is opposed to the top rim portion of the substrate and to the retract position that is away from the atmosphere blocker plate. Processing liquid is supplied from the nozzle, which is positioned to the opposing position, to the top rim portion of the substrate.

Abstract: The present invention provides a system (100) for conditioning multi-component slurries utilized in chemical mechanical polishing (CMP) of semiconductor wafers (140). The system provides a first slurry component (108), and a second slurry component (120). A conditioning component (102) has first and second inlets, and an outlet operatively coupled to a dispensing system (138). First and second flow control components (116, 126) are operably intercoupled between the first and second inlets and the first and second slurry components, respectively. The system further provides a megasonic energy source (106), adapted to generate an energy field (118) across the conditioning component. A conveyance component (114) conducts the slurry components from the inlets through the energy field, and delivers a final mixture (136) of multi-component slurry to the outlet.

Abstract: A focus ring for a plasma processing apparatus has an inner region, middle region, and outer region, disposed in this order from the inner side to surround a target substrate. On the side to be exposed to plasma, the surfaces of the inner region and outer region consist essentially of a dielectric, while the surface of the middle region consists essentially of a conductor. The middle region is arranged to shift the peak of plasma density to the outside of the peripheral edge of the target substrate. If there is no middle region, the peak of plasma density appears substantially directly above the peripheral edge of the target substrate.

Abstract: A susceptor device comprises a base body, an electrostatic absorbing inner electrode which is disposed on a bottom surface of the base body, a power supplying terminal, an insulating sprayed layer which coats the electrostatic absorbing inner electrode and a connecting section for the power supplying terminal and the electrostatic absorbing inner electrode, and a temperature controlling section. The insulating sprayed layer and the temperature controlling section are attached together unitarily via the bonding agent layer. The flange of the base body fits to a notched section of the temperature controlling section such that the electrostatic absorbing inner electrode, insulating sprayed layer, and the bonding agent layer should be sealed from thereoutside. It is possible to form a thin supporting plate and improve controllability for temperature on the plate sample and transparency for the plasma.

Abstract: The present invention provides an apparatus for vacuum processing generally comprising an enclosure having a plurality of isolated chambers formed therein, a gas distribution assembly disposed in each processing chamber, a gas source connected to the plurality of isolated chambers, and a power supply connected to each gas distribution assembly.

Abstract: An apparatus and a method for removing a coating film capable of stable treatment for removing unnecessary coating film at a substrate edge are provided. A substrate is clamped by approach stages from front and rear directions on a chuck, and fixed when accurate registration thereof is achieved. Then, the substrate edge is moved back and forth together with the chuck and the approach stage, so that the edge of the substrate is introduced in a space between an upper piece and a lower piece of a fixed arm portion. While the substrate is being moved, a solvent is fed from a nozzle portion onto a surface thereof and a purge gas is fed through a purge gas feeding pipe, so as to remove the coating film from the surface of the substrate by sucking and discharging the solvent and dissolved coating film through a discharge pipe.

Abstract: One embodiment relates to a loadlock having a first support structure therein to support one unprocessed substrate and a second support structure therein to support one processed substrate. The first support structure is located above the second support structure. The loadlock includes an elevator to control the vertical position of the support structures. The loadlock also includes a first aperture to permit insertion of an unprocessed substrate into the loadlock and removal of a processed substrate from the loadlock, as well as a second aperture to permit removal of an unprocessed substrate from the loadlock and insertion of a processed substrate into the loadlock. A cooling plate is also located in the loadlock. The cooling plate includes a surface adapted to support a processed substrate thereon. A heating device may be located in the loadlock above the first support structure.

Abstract: A semiconductor apparatus for processing a wafer comprises a stage, a fluid supply unit, and a cleaning unit. The stage supports the wafer. The fluid supply unit provides a first fluid, wherein the fluid supply unit is moveable between a second position and a first position. The cleaning unit provides a second fluid, wherein when the fluid supply unit is in the first position, the fluid supply unit provides the first fluid toward the wafer, and when the fluid supply unit is in the second position, the cleaning unit blows the second fluid toward a surface of the fluid supply unit to clean the surface thereof.

Abstract: A retainer ring of a chemical-mechanical polishing device which can prevent itself from being twisted and improve defective proportion and equipment operating rate occurred when polishing semiconductor wafers by embedding a metal member inside. Retainer ring installed to a polishing head of a chemical mechanical polishing device to fix a semiconductor wafer includes: a first member of a resin connected to a carrier of the polishing head and a room is formed inside; a second member of a metal embedded into the room of the first member. The present invention can improve a defective proportion of a semiconductor wafer polishing process by above effects and can reduce initial limitation conditions accompanied to mass production to increase an equipment operation rate by providing credibility of the retaining ring.

Abstract: The present invention relates to a susceptor system for an apparatus of the type adapted to treat substrates and/or wafers; the susceptor system is provided with a cavity (1) which acts as a chamber for the treatment of the substrates and/or wafers and which extends in a longitudinal direction and is delimited by an upper wall (2), by a lower wall (3), by a right-hand side wall (4), and by a left-hand side wall (5); the upper wall (2) is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the lower wall (3) is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the right-hand side wall (4) is constituted by at least one piece of inert, refractory and electrically insulating material; the left-hand side wall (5) is constituted by at least one piece of inert, refractory and electrically insulating material; the piece of the upper wall (2) is thus electrically well i

Abstract: In a substrate processing apparatus that supports substrates W by a plurality of holding members of a rotor to process the substrates W rotated by the rotor, any one of the holding members is provided with press devices 130 to apply pressures on the peripheries of the substrates W. Each press device 130 has an abutting part 160 for contact with the periphery of the substrate W, a cylinder mechanism 161 for moving the abutting part 160 between a position in contact with the periphery of the substrate W and another position apart from the periphery of the substrate W and a deformable part 162 elastically deformed by the movement of the abutting part 160 to isolate the cylinder mechanism 161 from an atmosphere around the substrates W. Consequently, it is possible to provide the substrate processing apparatus and method that do not cause a diaphragm to be deformed excessively.

Abstract: A substrate processing apparatus for supplying a treatment liquid onto the surface of a substrate to treat the same. This apparatus is provided with: a spin chuck for holding and rotating a substrate; a nozzle for supplying a treatment liquid to the substrate held by the spin chuck; a circulating passage arranged such that the treatment liquid supplied to the substrate from the nozzle and used for substrate treatment is circulated to the nozzle and reutilized for substrate treatment; a metal contamination amount measuring device for measuring the metal contamination amount in the treatment liquid passing through the circulating passage; and a judgment processing unit for judging whether or not the value measured by the metal contamination amount measuring device has exceeded a predetermined set value.

Abstract: In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.

Abstract: Systems and methods for processing microfeature workpieces are disclosed herein. In one embodiment, the system comprises a processing chamber having a workpiece processing site configured to receive a microfeature workpiece and a main inlet through which a processing fluid can flow into the processing chamber. The system further comprises a plate in the processing chamber between the main inlet and the workpiece processing site. The plate has a first side generally facing the main inlet and a second side opposite the first side. The plate further includes a plurality of passageways extending from the first side of the plate to the second side. The individual passageways include an inlet portion projecting from the first side of the plate by a separation distance.

Abstract: A method and system for controlling a velocity field in a processing system is described. In an exemplary embodiment described, the system includes a multi-outlet exhaust manifold having three or more outlets coupled to the processing system adjacent a surface of a substrate to be process. The three or more outlets are located adjacent the substrate in order to provide for a uniform flow of fluid above the surface of the substrate. Additionally, the flow of fluid through the three or more outlets is cyclically and sequentially alternated.