Abstract: A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.

Abstract: A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.

Abstract: A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.

Abstract: A processing apparatus includes a processing bath having a liquid injection port in the bottom thereof, a rectifier plate located between the bottom of the processing bath and a position at which an object to be processed is positioned, and a distribution portion extending between the rectifier plate and the liquid injection port and over the liquid injection port. The distribution portion includes an opposing portion opposing the liquid injection port, a surrounding portion surrounding a space between the opposing portion and the liquid injection port, and a guard portion or extended portion extending outwardly from the bottom end of the surrounding portion.

Abstract: The present invention discloses a method and apparatus for the directed formation of a re-entrant micro-jet formed upon the collapse of a cavitation bubble formed proximate to a work surface placed in a fluid. A mask containing an orifice, placed between the work surface and the cavitation bubble, is utilized to direct the re-entrant micro-jet to the work surface. The cavitation bubble may be formed in the desired location by focusing an energy flow proximate to the mask. The energy flow may be obtained by radiation from laser, x-ray, or electrical discharge sources.

Abstract: In an embodiment, a spinning apparatus includes a spin table on which an object to be etched is placed, a rotation unit rotating the spin table, and a nozzle unit including a center nozzle, disposed on the central portion of the spin table, and at least one side nozzle, disposed on an edge of the spin table. Etching uniformity is improved over the conventional art because an etching chemical is distributed more evenly by the nozzle unit as the object to be etched is rotated. An embodiment may also include an exhaust to remove excess etching chemical.

Abstract: A chemical-mechanical nanogrinding process achieves near-zero pole tip recession (PTR) to minimize magnetic space loss of the head transducer to media spacing loss, alumina recession and trailing edge profile variation, and smooth surface finish with minimal smearing across multi-layers of thin films and the hard substrate to meet the requirements of high areal density thin film magnetic heads for hard disk drives (HDD). With a fine chemical mechanical nanogrinding process, PTR can be improved to a mean of about 0.5 nm.

Abstract: An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

Abstract: A method is provided for heating a substrate in a process chamber using a heated chuck. In accordance with the method, the substrate is lowered onto the chuck and heated to a first temperature less than a temperature of the chuck. The substrate is then raised away from the chuck, and a process is carried out on the substrate while the substrate is supported above the chuck. The substrate is then lowered back to the chuck and heated to a second temperature greater than the first temperature for further processing of the substrate.

Abstract: A method for forming a film includes forming the film on a substrate, followed by performing a first annealing of the film at a temperature lower than a crystallization temperature of the film. A second annealing of the film is performed at a temperature higher that the crystallization temperature. Forming the film and the first annealing of the film are performed in situ in a chamber. Alternatively, the first and second annealing are performed in situ in an apparatus.

Abstract: Polishing pads, planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies. The polishing pads, for example, can be web-format pads, and the planarizing machines can be web-format machines. In a typical application, the web-format machines have a pad advancing mechanism and stationary table with a first dimension extending along a pad travel path, a second dimension transverse to the first dimension, and an illumination site from which a laser beam can emanate from the table. The pad advancing mechanism moves the pad along the pad travel path to replace worn portions of the pad with fresh portions. In one embodiment of the invention, a web-format polishing pad includes a planarizing medium and an optical pass-through system having a plurality of view sites through which a light beam can pass through the pad.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Abstract: A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.

Abstract: A method for dispensing a chemical, such as an edge bead removal solvent, onto a semiconductor wafer comprising the steps of dispensing the chemical selectively onto the wafer and applying a suction to the area immediately surrounding the location at which the chemical is dispensed onto the wafer. Preferably, the suction is applied substantially simultaneously with the dispensing of the chemical. One specific version of the invention provides an edge bead removal system wherein suction is applied to the area immediately surrounding the solvent dispensing nozzle to remove dissolved coating material and excess solvent from the wafer. In one aspect of this system, an apparatus for removing the edge bead includes a mechanism for dispensing a solvent selectively onto the edge of the wafer, and a mechanism surrounding the dispensing mechanism for vacuuming excess solvent and dissolved coating material from the edge of the wafer.

Abstract: A baffle plate assembly, configured to be coupled to a substrate holder in a plasma processing system, comprises a baffle plate having one or more openings to permit the passage of gas there through, wherein the coupling of the baffle plate to the substrate holder facilitates auto-centering of the baffle plate in the plasma processing system. For example, a centering ring mounted in the substrate holder can comprise a centering feature configured to couple with a mating feature on the baffle plate. After initial assembly of the plasma processing system, the baffle plate can be replaced and centered within the plasma processing system without disassembly and re-assembly of the substrate holder.

Abstract: A retainer is used with an apparatus for polishing a substrate. The substrate has upper and lower surfaces and a lateral, substantially circular, perimeter. The apparatus has a polishing pad with an upper polishing surface for contacting and polishing the lower face of the substrate. The retainer has an inward facing retaining face for engaging and retaining the substrate against lateral movement during polishing of the substrate. The retaining face engages a substrate perimeter at more than substantially a single discrete circumferential location along the perimeter.

Abstract: In a first aspect, a first apparatus is provided for a chemical mechanical polishing (CMP) process. The first apparatus includes (1) a rotatable member; (2) an end effector adapted to receive and retain a conditioning disk; and (3) an elastic device disposed between the rotatable member and the end effector. The elastic device is (a) adapted to rotate the end effector via a torque from the rotatable member, and (b) flexibly extensible so as to impart a force to the end effector while permitting the end effector to deviate from a perpendicular alignment with the rotatable member in order for a conditioning surface of the conditioning disk to conform to an irregular polishing surface of a pad being conditioned. Numerous other aspects are provided, including methods and apparatus for using liquid or gas to deter polishing slurry or debris from entering the conditioning head.

Abstract: Disclosed is a wafer chuck, which has protrusions for supporting a substrate, for attracting and holding the substrate by negative pressure while the substrate is being supported by the protrusions. The wafer chuck includes pin-shaped protrusions dispersed on a suction side of the chuck, and circular peripheral wall portions disposed in the vicinity of the rim of the supported substrate and in the vicinity of the outer peripheral portion of a lifting hole, respectively. The suction side of the wafer chuck is provided with a first area in which the pin-shaped protrusions are arrayed in a grid-line manner, and a second area in which the pin-shaped protrusions are arrayed in circumferential form. The second area is provided in the vicinity of the peripheral wall portion and peripheral wall portion, and the first area is provided elsewhere.

Abstract: A system for an apparatus of the type adapted to treat substrates and/or wafers is described and comprises a stationary base element and a movable support for at least one substrate or at least one wafer, the support being rotatable above the element about a stationary axis; a chamber, and at least one duct is provided for the admission of at least one gas-flow to the chamber in order to raise the support; the system also comprises means for converting the flow of gas into the chamber into rotation of the support.

Abstract: A temperature control assembly for use in etching processes includes a housing, a cooling conduit, fasteners, and a mounting block. The fasteners couple to the housing and operate to associate the cooling conduit, which is formed from a non-corrosive metallic material, with the housing. The mounting block is coupled to the cooling conduit. Also, a method for retrofitting an existing temperature control assembly includes removing an original cooling mechanism, selecting a retrofit cooling conduit formed from a non-corrosive metallic material, coupling fasteners to a housing of the temperature control assembly to associate the retrofit cooling conduit with the housing, and coupling a retrofit mounting block to the retrofit cooling conduit.