Abstract: A substrate processing apparatus equipped to employ an energy directed at a process side of a substrate to enhance and control material removal is provided.

Abstract: A wet etching apparatus is disclosed. The apparatus comprises a first tank, containing a first wet etching solution; a filter, having a filter cartridge, connected to the first tank to filter out the impurities in the first solution; a second etching tank, connected to the filter and the first tank in parallel, containing a second solution; a reaction tank, connected to the filter, wherein having a wet etching reaction; an exhaust component, connected to the filter and the reaction tank in parallel; a first pump, delivering the first solution to the reaction tank through the filter; and a second pump, delivering the second solution to the exhaust component to exhaust the solution from the etching tank through the filter.

Abstract: The present invention provides a film deposition system capable of effectively cooling a work having a large volume, and a film deposition method using this system. The film deposition system has, within a vacuum chamber 1, an evaporation source 3 for forming a film on a work 2 and a cooling device 4 for cooling the work 2, characterized in that the work 2 has an internal space 15 communicating with the outside through an opening part 14, and the cooling device 4 is insertable to and drawable from the internal space 15 through the opening part 14 of the work 2 to cool the work 2 from the inside.

Abstract: A substrate treating apparatus is provided for eliminating wasteful consumption of a treating solution in a treating mode in which the treating solution is delivered in a strip form to a substrate from a treating solution delivery nozzle sweeping over the substrate. In a first aspect of the invention, collecting vessels are arranged around a developing cup surrounding a wafer supported by a wafer holder. The collecting vessels collect part of a developer delivered from a discharge opening of a developer delivery nozzle outwardly of a surface of the wafer. In a second aspect of the invention, collecting vessels are arranged below a developer delivery nozzle, with collecting openings of the collecting vessels opposed to a discharge opening or openings of the delivery nozzle. The collecting vessels are moved longitudinally of the discharge openings according to a position of the developer delivery nozzle relative to the wafer.

Abstract: Methods and apparatuses for planarizing microelectronic substrate assemblies on fixed-abrasive polishing pads with non-abrasive lubricating planarizing solutions. One aspect of the invention is to deposit a lubricating planarizing solution without abrasive particles onto a fixed-abrasive polishing pad having a body, a planarizing surface on the body, and a plurality of abrasive particles fixedly attached to the body at the planarizing surface. The front face of a substrate assembly is pressed against the lubricating planarizing solution and at least a portion of the fixed abrasive particles on the planarizing surface of the polishing pad. At least one of the polishing pad or the substrate assembly is then moved with respect to the other to impart relative motion therebetween. As the substrate assembly moves relative to the polishing pad, regions of the front face are separated from the abrasive particles in the polishing pad by a lubricant-additive in the lubricating planarizing solution.

Abstract: A planet system workpiece support for a vacuum treatment apparatus includes a sun system rotatable in the vacuum treatment apparatus about a sun system axle to be coupled to a drive. At least one planet system is rotatable on planet axle and is supported on the sun system. The planet system has a driving coupling for driving the planet system and the support has at least one moon system supported on the planet system and rotatable about a moon axle with a driving connection to the sun system. At least one workpiece is received on the moon system and the driving connection is established, at least during operation, uninterruptedly between sun system and moon system.

Abstract: The present invention relates to a method and apparatus for automatically measuring the concentration of total organic carbon (TOC) in chemicals and ultra-pure water that are used in a wet etch process. The apparatus includes a sampling line extending from a processing bath, and a pump, for extracting a fluid sample from the processing bath, a buffer for filtering foreign material or air bubbles from the fluid, and an analyzer for analyzing the concentration of TOC in the fluid.

Abstract: An annular receptacle is described, particularly for a rotating carrier for receiving a disk-shaped object such as a semiconductor.

Abstract: A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness or other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various electrical devices.

Abstract: A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.

Abstract: A CMP polishing head having multiple concentric pressure zones for selectively increasing polishing pressure against selected regions of a semiconductor wafer in order to compensate for variations in polishing rates on the wafer surface otherwise caused by ridges or other non-uniformities in the wafer surface. The polishing head of the present invention comprises multiple, concentric, inflatable pressure rings each of which may be selectively inflated to increase the polishing pressure against a concentric ridge or material elevation on the corresponding concentric region of the wafer surface and increase the polishing rate of the concentric ridge or elevation between the rotating polishing head and a stationary polishing pad. A channel selector may be included in the polishing head for selectively aligning an air/pressure vacuum source with a selected one of multiple pressure tubes that connect to the respective pressure rings.

Abstract: A method and apparatus for sensing a presence of a magnetic field and/or a magnitude of a magnetic flux density of the magnetic field. A direct-current voltage is applied across a first layer of a conductive material, so that a direct current flows in a first direction through the first layer. A second layer of a piezoelectric material is integrated with or positioned adjacent or abutting the first layer. The first layer and the second layer are exposed to or positioned within a magnetic field. A Lorentz force is thus caused, preferably in a direction which is generally perpendicular to the first direction of the direct current and a second direction of the magnetic field to deflect the piezoelectric material thereby causing an output voltage in response to the Lorentz force. A magnetic flux density can be calculated as a function of the piezoelectric output.

Abstract: In a first aspect, a liquid delivery system is provided that includes a first liquid delivery module adapted to store and dispense a first chemical and a second liquid delivery module adapted to store and dispense a second chemical. The liquid delivery system further includes at least one connecting mechanism coupled to the first and second delivery modules and adapted to couple the first and second delivery modules to a substrate processing device. Each delivery module includes a vessel including a first chamber and a second chamber. The vessel is configured to receive a liquid from a bulk supply and to receive a pressurized flow of gas from a gas source. Each liquid delivery module also includes a valve assembly operable to selectively permit fluid communication between the first chamber and the second chamber during a non-refill state and to prevent fluid communication between the first chamber and the second chamber during a refill state.

Abstract: A method and apparatus for providing a substantially constant environment in the cavity surrounding the optical pathway during the chemical mechanical planarization (CMP) operation is provided. In one embodiment, a system for planarizing the surface of a substrate is provided. The system includes a platen configured to rotate about its center axis. The platen supports an optical view-port assembly for assisting in determining a thickness of a layer of the substrate. A polishing pad disposed over the platen is included. The polishing pad has an aperture overlying a window of the optical view-port assembly. A carrier for holding the substrate over the polishing pad is also included. A cavity defined between the surface of the substrate and the window is included. A fluid delivery system adapted to provide a stable environment in the cavity during a chemical mechanical planarization (CMP) operation is included.

Abstract: A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A sensor array external to the CMP tool is included. The sensor array is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The sensor array provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.

Abstract: Methods and apparatus are provided for performing a chemical-mechanical process on a workpiece surface. The apparatus includes a platen having a top surface and at least one inlet configured to receive a polishing fluid, a plurality of holes formed in the top surface, a manifold system in fluid communication with the at least one inlet and each of the holes, a controller adapted to supply valve command signals, and a plurality of valves, each valve being disposed in one of the holes and coupled to the controller to receive the valve command signals and being operable, in response thereto, to selectively move between an open and a closed position. The method includes the steps of supplying the valve command signals, and selectively opening and closing the valves in response to the valve command signals.

Abstract: One embodiment relates to a loadlock having a first support structure therein to support one unprocessed substrate and a second support structure therein to support one processed substrate. The first support structure is located above the second support structure. The loadlock includes an elevator to control the vertical position of the support structures. The loadlock also includes a first aperture to permit insertion of an unprocessed substrate into the loadlock and removal of a processed substrate from the loadlock, as wall as a second aperture to permit removal of an unprocessed substrate from the loadlock and insertion of a processed substrate into the loadlock. A cooling plate is also located in the loadlock. The cooling plate includes a surface adapted to support a processed substrate thereon. A heating device may be located in the loadlock above the first support structure.

Abstract: A vacuum processing device includes a driven body 122 provided inside a vacuum processing chamber 104, a driving means 126 provided outside the vacuum processing chamber 104 and a drive shaft 124 connecting the driven body 122 to the driving means 126. A first annular body 152 is secured to the drive shaft 124 and a second annular body 150 is rotatably supported by the first annular body 152. A bellows 148 that airtightly seals the periphery of the drive shaft 124 is provided so as to connect the second annular body 150 with the inner wall of the vacuum processing chamber 104. In this structure, the bellows 148 is allowed to move as one body with the drive shaft 124 during vertical motion of the drive shaft 124 but is made to stay in place during rotational motion of the drive shaft 124. Thus, the drive shaft, which engages in vertical motion and rotational motion, is airtightly sealed by the bellows.

Abstract: An apparatus for controlling the flow of liquid material from a liquid material source to a process chamber is disclosed. The apparatus comprises an injector/vaporizer disposed proximate to the process chamber. The injector/vaporizer includes one or more piezoelectric grids located proximate to a vaporization chamber. The one or more piezoelectric grids function to control the flow of liquid material into the vaporization chamber. Each piezoelectric grid includes interlocking arrays of stripes attached to a frame.

Abstract: A revolution member supporting apparatus holds and rotates a disc-shaped object (object to be rotated) such as a semiconductor wafer. The revolution member supporting apparatus includes a rotatable member which rotates about an axis of roation, and a plurality of holding members which are disposed along a circle having a center corresponding to the axis of rotation of the rotatable member, and which revolve around the axis of rotation when the rotatable member rotates, wherein the holding members are allowed to swing about their own central axes.