Abstract: A relay fault diagnosis device includes: at least one C-contact relay that has a common terminal, a normally open terminal and a normally closed terminal; a read-back circuit that is connected to the normally closed terminal of the relay; and a diagnostic section that outputs a test signal to the common terminal to diagnose a fault in the relay.

Abstract: A latching system with a hall-effect sensor as described herein. A vehicle latch, including: a component movably secured to the latch; a magnet secured to the component; and a hall effect sensor positioned to detect a polarity of the magnet as the component moves, wherein the magnet is arranged with respect to the hall effect sensor so that a direction of the magnet's polarity (North and South) is parallel to the hall effect sensor as the component moves with respect to the hall effect sensor.

Abstract: A package-integrated power semiconductor device is provided, which includes at least one power transistor coupled to a current path, a current measurement device and a package. The current measurement device is electrically insulated from and magnetically coupled to the current path. The current path and the current measurement device are arranged so as to enable the current measurement device to sense the magnetic field of a current flowing through the current path. The at least one power transistor, the current measurement device, and the current path are arranged inside the package. Further, a power module assembly including the package-integrated power semiconductor device as well as a method of operating the package-integrated power semiconductor device are provided.

Abstract: A test site and method are herein disclosed for predicting E-test structure (in-die structure) and/or device performance. The test site comprises an E-test structure and OCD-compatible multiple structures in the vicinity of the E-test structure to allow optical scatterometry (OCD) measurements. The OCD-compatible multiple structures are modified by at least one modification technique selected from (a) multiplication type modification technique, (b) dummification type modification technique, (c) special Target design type modification technique, and (d) at least one combination of (a), (b) and (c) for having a performance equivalent to the performance of the E-test structure.

Abstract: An angle sensor can have a plurality of magnetic field sensing elements configured to detect a magnetic field and generate a respective plurality of magnetic field signals. In response to these magnetic field signals, a processor generates an uncorrected angle signal that is indicative of an angle of the magnetic field. An error corrector generates an error value using one or more of the previous samples of the uncorrected angle signal, and a summation element applies the error value to a current sample of the uncorrected angle signal to generate a corrected angle signal. The error corrector can generate the error value by applying a correction factor to a previous sample of the uncorrected angle signal, or by applying a correction factor to a predicted current sample of the uncorrected angle signal.

Abstract: The present invention relates to a system for generating a direct current power output from an alternating current (103) in a primary wire (3), wherein the system comprises: at least one core (104) configured to be located around the primary wire (3); at least one secondary winding (22, 24) arranged around the at least one core (104), wherein each winding (22, 24), together with the at least one core (104) and the primary wire (3), forms a current transformer unit, and wherein each secondary winding (22, 24) has a first end and a second end; for each secondary winding (22, 24), a rectifier (10), wherein each rectifier (10) is configured to convert an alternating current to a direct current, and wherein each rectifier (10) comprises two AC connections for alternating current and two DC connections for direct current, wherein the first end and the second end of the secondary winding (22, 24) are connected to the AC connections of the rectifier (10); for each secondary winding (22, 24), a shunting unit arranged

Abstract: An optical device is formed on an optical IC chip. The shape of the optical IC chip is rectangular or parallelogram. The optical device induces: an optical device circuit; a first optical waveguide that is coupled to the optical device circuit; a pad that is electrically connected to the optical device circuit; a grating coupler; and a second optical waveguide that is coupled to the grating coupler. The pad is formed in a region close to a first side of the optical IC chip. The grating coupler is formed in a specified region, which is not close to the first side, on the optical IC chip. The first optical waveguide and the second optical waveguide are respectively extended to an edge of the optical IC chip.

Abstract: The present disclosure provides an analysis method for a semiconductor device for analyzing a plurality of process parameters for manufacturing a HKMG fin field effect transistor. The analysis method specifically includes: establishing a plurality of process parameter models by grouping the plurality of process parameters in pairs; performing sensitivity analysis on each of the process parameter models; extracting a plurality of key process parameter models from the plurality of process parameter models based on the results of the sensitivity analysis; and performing data mining on the plurality of key process parameter models to determine a plurality of key process parameters and their correlations among the plurality of key process parameters. According to the analysis method provided by the present disclosure, related process parameters are highlighted by data mining and grouping, and the source of process parameter changes is explained. It is possible to adjust the process.

Abstract: The present invention is a storage tank including: a tank; a tank main body that stores a liquid material; a cover body that covers an opening of the tank main body; a support body that is positioned opposite to the cover body; a seal body that is sandwiched by a flange provided at the opening end of the tank main body and the cover body; and tightening members that tighten the cover body and the support body, and is capable of, even when the thickness of the flange provided at the opening end of the tank main body is thin, attaching the cover body on the flange while maintaining a contact property.

Abstract: In one aspect, an angle sensor includes analog circuitry configured to generate an analog value having a tangent value, an analog-to-digital converter configured to convert the analog value to a digital value and digital circuitry configured to receive the digital value. The analog circuitry includes a plurality of magnetoresistance elements that include a first magnetoresistance element configured to provide a cosine value indicative of a magnetic field along a first axis and a second magnetoresistance element configured to provide a sine value indicative of the magnetic field along a second axis orthogonal to the first axis. The tangent value is determined by the cosine and sine values. The digital circuitry includes an angle processor configured to use the digital value and a fixed value in an arctangent algorithm to generate an angle of a direction of the magnetic field.

Abstract: In a current detection apparatus, one or more first plate portions, one or more second plate portions, and one or more third plate portions of one or more magnetic shields are opposed to side surfaces of the one or more protrusions. The one or more protrusions, the one or more magnetic field detection elements, and one or more conductive members are respectively surrounded by the one or more magnetic shields, respectively. Consequently, the current detection apparatus is downsized and has high current detection accuracy.

Abstract: An earth leakage circuit breaker and a method of controlling the same are disclosed. An earth leakage circuit breaker according to the present disclosure can detect a type of leakage current and output the type of the leakage current in various forms such that a user can recognize the type of the leakage current. Therefore, the user can easily recognize whether or not the leakage current has occurred and the type of the leakage current. This may facilitate the user to recognize the cause of the leakage and take an effective measure for preventing an accident.

Abstract: A sensing device can use electromagnetic resonance to detect properties of a sample. For example, the sensing device can be immersed into a sample, placed in proximity to a sample, or otherwise located within sensing range of a sample. The sensing device can transmit a signal onto the sample and receive a reflected signal using a resonating structure. The sensing device can analyze the reflected signal to detect a constituent in the sample, such as a concentration of the constituent in the sample.

Abstract: A sensor system for sensing the contents of a bore including a plurality of coils disposed behind a non-metallic lining. An oscillator circuit may be used to drive the coils to generate oscillating electromagnetic fields, and a detection circuit generates output signals from each coil representing a parameter of the electrical oscillations that depends on the contents of the bore. The coils may include a primary coil and a one secondary coil, wherein the oscillating electromagnetic field generated by the secondary coil has a lesser degree of interaction with the contents of bore than the oscillating electromagnetic field generated by the primary coil. The sensor system may use the output signal from the secondary coil to compensate the output signal from the primary coil for environmental effects.

Abstract: A system and method for detecting electrical events, often a corona associated with an impending lightning strike, including a coupling mechanism configured to establish an electromagnetic connection with a conductive substrate to receive signals intercepted by the conductive substrate. A detector circuit converts and discriminates the received signals into output signals. An output mechanism records and/or transmits the output signals, as well as determines if the output signal represents a qualified event signal.

Abstract: The present disclosure relates to spectral analysis in wireless current sensors. For example, a wireless current sensor (WCS) includes current transformer windings that harvest electrical energy from a power line and allow the WCS to obtain current measurements of the power line. The WCS includes a processor that obtains the current measurements of the power line via the current transformer windings. The processor generates a frequency domain representation of the current on the power line using the current measurements. The processor sends a wireless signal indicating results from the frequency domain representation to an intelligent electronic device (IED) that monitors the power line to allow the TED to analyze the results for anomalies.

Abstract: A dual feeder circuit system for supplying electrical power can include one or more feeder groups, each feeder having a first wire and a second wire connected between a source terminal and a load terminal to carry the same electrical signal on both wires. The system can include one or more current transformers disposed on one or more of the feeders groups such that the current transformer is disposed around both the first wire and the second wire. The first wire can be passed directly through a first side of the current transformer to allow current to travel through the current transformer in a first direction, and the second wire can include a loop and be passed through a second side of the current transformer to allow current to travel through the current transformer in an second direction opposite the first direction.

Abstract: A method to effectively utilize an oil debris monitor to provide advanced warning to mechanical system failures in a high noise system by adapting detection and annunciation algorithms to the background noise in a system that includes collecting I and Q channel data from a sensor; processing the I and Q channel data to both calculate a noise based (RMS adjusted) detection threshold and to identify a ferrous and nonferrous signal; processing the ferrous and nonferrous signals to determine signal peaks above the RMS adjusted detection threshold; adjusting a detection threshold if more signal peaks observed than allowable particles in a given time window; transmitting the detection threshold previously determined to particle detection, rate limit adjustment, detectability algorithms, and estimated mass loss accumulation.

Abstract: A gas sensor includes: a substrate; a first conductor and a second conductor that are disposed on the substrate; an insulating layer; and an adsorbent layer. The insulating layer covers the first conductor and the second conductor, and has a first opening that allows a part of a surface of the first conductor to be exposed therethrough and a second opening that allows a part of a surface of the second conductor to be exposed therethrough. The adsorbent layer contains a conductive material and an organic adsorbent that can adsorb a gas. The adsorbent layer is in contact with the first conductor and the second conductor respectively through the first opening and the second opening.

Abstract: The present disclosure provides an analysis method of a semiconductor device, and the semiconductor device comprises a plurality of HKMG fin field effect transistors and a wafer on which the plurality of HKMG fin field effect transistors are located, and the analysis method comprises: performing acceptance testing on the wafer to be tested; constructing an N-type model based on the position of each N-type transistor at the surface of the wafer to be tested and the corresponding acceptance test result, constructing a P-type model based on the position of each P-type transistor at the surface of the wafer to be tested and the corresponding acceptance test result, and constructing an N/P ratio model corresponding to the surface of the wafer to be tested based on the N-type model and the P-type model; and identifying the N/P ratio model based on a preset standard wafer model to determine whether the wafer to be tested is compliant based on the N/P ratio model.