Abstract: Repeater circuits including an inverting zipper repeater circuit and an inverting gain-enhanced repeater circuit are described.

Abstract: A timer circuit is arranged for reduced propagation delay and improved stability at low supply voltages. The timer circuit includes a capacitor circuit, a voltage offset circuit, an inverter circuit, and a current source circuit. The current source circuit is arranged to provide a current. Also, the capacitor circuit is arranged to provide a voltage ramp in response to the current. The voltage offset circuit is configured to provide a voltage offset. Further, the current source circuit, the capacitor circuit, and the voltage offset current are arranged to provide two voltage ramps that are offset from each other. Additionally, the inverter circuit includes a p-type transistor and an n-type transistor. The p-type transistor is configured to receive one of the two voltage ramps, and the n-type transistor is configured to receive the other of the two voltage ramps.

Abstract: In a delay locked loop (DLL) of a semiconductor memory device capable of compensating for delay of an internal clock signal by variation of driving strength of an output driver, a replica output driver exhibits the same delay amount as the delay amount as an output driver whose driving strength varies. A phase detector detects a phase difference between an internal clock signal which is delayed by the replica output driver, and an external clock signal. A control circuit generates a control signal in response to the output signal of the phase detector. A variable delay circuit, in response to the control signal, delays the external clock signal and generates the internal clock signal in synchronization with the external clock signal. Since the DLL has a replica output driver which can accurately track the delay of an internal clock signal by variation of the driving strength of an output driver in the feedback loop, output data can be accurately synchronized with an external clock signal.

Abstract: Described are methods and circuits that reduce or eliminate the impact of power-supply fluctuations on circuit performance. IC dies include compensation circuitry that compares local power-supply voltages to relatively stable reference voltages, such as unloaded distributed supply voltages, to sense local supply-voltage fluctuations. Based upon this comparison, the compensation circuitry adjusts circuit characteristics that might otherwise suffer performance degradation. Receivers in accordance with some embodiments automatically tailoring their gain to the output characteristics of a number of possible transmitter types with which the receivers may be expected to communicate.

Abstract: A voltage divider for integrated circuits that does not include the use of resistors. In one embodiment, voltage node VDD is connected with two n-type transistors, NFET1 and NFET2, which are connected in series. NFET 1 includes a source (12), a drain (14), a gate electrode (16) having a gate area A1 (not shown), and a p-substrate (18). NFET2 includes a source (20), a drain (22), a gate electrode (24) having a gate area A2 (not shown), and a p-substrate (26). Source (12) and drain (14) of NFET1 are coupled with gate electrode (24) of NFET2. The voltage difference between NFET1 and NFET2 has a linear function with VDD. As a result, voltage VDD may be divided between NFET1 and NFET2 by properly choosing the ratio between each of the respective transistor gate electrode areas, (A1) and (A2).

Abstract: A power on reset (POR) circuit for providing a reset pulse signal to a chip when power supply voltage, VDD, ramps up so that the chip always starts in a known state. The POR circuit generates the reset pulse as soon as VDD exceeds an assertion voltage. The assertion voltage is independent of the ramp rate of VDD. The POR circuit is shut off as soon as the reset signal is generated, thereby drawing zero steady state current from VDD. The re-arm time for the POR circuit is very small. The POR circuit does not reset the chip when there is a dynamic change in VDD.

Abstract: A bias voltage generating circuit and a differential amplifier which can ensure a constant current through a constant current circuit in a differential amplifier circuit even in case that a common mode voltage of the reference voltage signal to the differential amplifier circuit changes are attained. A constant current is generated employing a current source (Isw) and a current mirror circuit composed of a transistor (M1 and M2). The constant current is supplied to a source of a transistor (M3). A drain and a gate of a transistor (M4) are connected with a drain of the transistor (M3). A reference voltage signal (Vref) to a differential amplifier circuit is inputted to a gate of the transistor (M3), and a drain potential of the transistor (M4) is made to function as a bias voltage (biasn) to a constant current circuit in the differential amplifier circuit.

Abstract: An output circuit is provided for outputting, based on a first drive signal, an output signal with an amplitude smaller than a source voltage, comprising: a first type MOS transistor whose gate is impressed with a first drive signal and whose drain outputs a signal; a second type MOS transistor whose gate is impressed with a second drive signal and whose drain outputs a signal; and feedback circuits generating the second drive signal by feeding an output signal obtained by synthesizing the signal outputted by the first type MOS transistor and the signal outputted by the second type MOS transistor back to the gate of the second type MOS transistor.

Abstract: The invention is aimed at providing a novel semi-conductor component, as well as a novel process for reading test data. There is a process for reading test data is made available, including reading test data generated during a semi-conductor component test procedure from at least one test data register of a semi-conductor component, storing the test data in at least one useful data memory cell provided on the semi-conductor component, and reading the test data from the at least one useful data memory cell.

Abstract: A band-gap circuit is constituted by comprising a feedback control amplifier 31 and MOS transistors 32 and 35, having two transistors 33 and 34 of which emitter area is different, comprising resistors R1, R2 and Rp between a base and an emitter of the transistor 33 of which emitter area is smaller, having the resistor Rp between the base and a collector and comprising the resistors R1 and R2 between the base and emitter of the transistor 34 of which emitter area is larger. It is possible to provide the band-gap circuit operable at a low supply voltage and having high PSRR, low noise and few variations.

Abstract: A powergating circuit includes an MOS circuit such as a memory circuit having a first power terminal and a second power terminal, a P-channel transistor having a drain coupled to the first power terminal of the MOS circuit, and an N-channel transistor having a drain coupled to the second power terminal of the MOS circuit. In order to minimize leakage current and resultant power dissipation a negative VGS voltage is established in the transistors during a standby mode and a boosted VGS voltage is established in the transistors during an active mode.

Abstract: An integrated circuit formed on a semiconductor chip, comprising a low pass filter circuit having a first resistor of a first resistance value and a capacitor of a first capacitance value, wherein the first resistance value and the first capacitance value determine a corner frequency of the filter; and a tuning circuit having a second resistor of a second resistance value, a switched-capacitor of a third resistance value and a comparator that compares two voltage signals to produce a control signal, wherein the control signal adjusts the first and second resistance values as a function of the third resistance value. The corner frequency of the filter can be adjusted by varying one or more reference voltage signals. In combination, the corner frequency of the filter is adjusted by changing the frequency of a clock that controls the switched-capacitor to decrease the circuit sensitivity.

Abstract: A circuit comprises a comparing means for comparing an internal voltage to a reference voltage for outputting a first driving signal, an internal voltage driving means for outputting the internal voltage in response to the first driving signal; an internal voltage detecting means for detecting the internal voltage and for generating a second driving signal in response to an active signal, and an overdriving control means for controlling the first driving signal in response to the second driving signal.

Abstract: A voltage detection circuit for detecting the voltage level of a first power source. A first transistor includes a first gate, a first source, and a first drain coupled to the first gate. A second transistor includes a second gate, a second source, and a second drain coupled to the second gate. A comparator includes a first input terminal, a second input terminal coupled to the second drain, and an output terminal. A first resistor is coupled between the first input terminal and the first drain. A second resistor is coupled to the first power source. A third resistor is coupled between the second resistor and the first input terminal. A fourth resistor is coupled between the second resistor and input terminal. A fifth resistor is coupled between the first source, and a second power source. A resistive device is coupled between the first source, and the first power source.

Abstract: An integrated circuit has one or more components that operate with reference to a distributed reference voltage. A reference voltage driver produces a compensated reference voltage, and the compensated reference voltage is distributed to form the distributed reference voltage at the components. Due to factors such as trace resistance and gate leakage, the distributed reference voltage is degraded relative to the compensated reference voltage. The reference voltage driver is responsive to feedback derived from the distributed reference voltage to adjust the compensated reference voltage so that the distributed reference voltage is approximately equal to a nominal reference voltage.

Abstract: A semiconductor integrated circuit device having an internal voltage generating circuit which generates a voltage two or more times higher than an operating voltage while at the same time reducing the voltage applied to a device, thereby ensuring the device reliability. In a charge pump circuit driven by supply voltage VDD, a maximum of 2VDD or a similar level voltage is applied between the drain and source of a MOSFET, the MOSFET being connected in series with a conduction MOSFET of the same type, the gate of which is supplied with VD-VDD, or a potential which is VDD lower than VD, the drain potential before its connection. The gate potential is obtained directly from a node in said charge pump which generates a voltage pulse synchronized with the voltage between the drain and source of that MOSFET, or through another rectifier device branched via a capacitor from the node.

Abstract: Circuit arrangement for voltage regulation having a differential amplifier having first and second inputs and first and second outputs, wherein a reference voltage is applied to the first input and a voltage to be regulated is applied to the second input. A charge pump is connected to the first output of the differential amplifier. A current mirror is connected to the second output of the differential amplifier. A transistor, which influences the voltage to be regulated, has its control input connected to the current mirror and the charge pump.

Abstract: A regulator system includes a power device and a sense device. During a normal operating mode, the power device is arranged to deliver current to a load, while the sense device is arranged to monitor the load current. An over-current mode is activated when the sensed load current exceeds a short-circuit current-limit. During the over-current mode, the power device is switched off such that the energy loss is minimized. Once the short-circuit condition is removed, the regulator system returns to the normal operating mode. The sense device is coupled to the load in such a way that the quiescent current of the regulator system does not rise with increasing load current. The regulator system is further arranged such that the short-circuit current-limit decreases automatically with increased operating temperature. The described regulator system has significantly reduced energy losses while also minimizing risks of thermal induced device failures during the short-circuit condition.

Abstract: A semiconductor integrated circuit is provided with a reference voltage generation circuit for generating a voltage to be a reference, a function circuit that is operated using an output voltage of the reference voltage generation circuit, and a reference voltage stabilization capacitor for stabilizing the output voltage, which is connected to an output terminal of the reference voltage generation circuit. During standby, the function circuit stops operating while the reference voltage generation circuit continues operating to prevent discharging of the reference voltage stabilization capacitor, thereby realizing reduction in power consumption of the function circuit such as an analog circuit as well as high-speed recovery from the standby state to the normal operation state.

Abstract: A hybrid inductive-capacitive charge pump provided with a driving stage that comprises a step-up converter and a buffer capacitor, and a cascade of charge pump stages; the first stage of the stage cascade is connected to a power supply and the last stage of the stage cascade is connected to an output of the charge pump circuit; the charge pump circuit comprises elements for activating alternately the charge pump stages, transferring charge from one stage of the cascade to the next stage of the cascade, each stage of the cascade of charge pumping stages comprising a pass transistor and a capacitor.