Abstract: A display device includes: a substrate; signal lines including a gate line, a data line, and a driving voltage line that collectively define an outer boundary of a pixel area; a transistor connected to the signal line; a first electrode extending across the pixel area and formed on the signal line and the transistor, and connected to the transistor, the first electrode having a first portion overlying only the signal line and the transistor, and a second portion including all of the first electrode not included in the first portion; a pixel defining layer formed on only the first portion of the first electrode; an organic emission layer formed on substantially the entire second portion but not on the first portion; and a second electrode formed on the pixel defining layer and the organic emission layer.

Abstract: A semiconductor package manufacturing method of the disclosure includes providing a multilayer adhesive film, forming a notch and a plurality of openings extending through the multilayer adhesive film, attaching the multilayer adhesive film to a back side of a wafer to form a stack, separating the stack into a plurality of individual stacks, separating each of the plurality of individual stacks into an upper stack and a lower stack, providing a substrate on which a first semiconductor chip is mounted, and stacking the upper stack on the first semiconductor chip. The upper stack includes a second semiconductor chip and a die attach pattern covering a portion of a back surface of the second semiconductor chip. A first side surface of the die attach pattern is aligned with a first side surface of the first semiconductor chip.

Abstract: Semiconductor chips may include a substrate; a protective layer on a first surface of the substrate, through electrodes extending through the substrate and the protective layer, and a Peltier structure including first through structures including first conductivity type impurities, and second through structures including second conductivity type impurities, which may extend through the substrate and the protective layer; pads on the protective layer and connected to the through electrodes, respectively, first connection wires connecting respective first ends of the first through structures to respective first ends of the second through structures, and second connection wires connecting respective second ends of the first through structures to respective second ends of one of the second through structures. The first through structures and the second through structures may be alternately connected to each other in series by the first connection wires and the second connection wires.

Abstract: A wafer stacking method and structure are provided. The wafer stacking method includes: providing a first wafer, wherein an upper surface of the first wafer includes a first bonding pad configured to connect to a first signal; fabricating a first redistribution layer (RDL) on the first wafer, comprising a first wiring electrically connected to the first bonding pad, and the first wiring includes a first landing pad; bonding a second wafer on the first RDL, wherein the second wafer includes a second bonding pad configured to connect the first signal and located corresponding to the first bonding pad; fabricating a first through silicon via (TSV) with a bottom connected to the first landing pad at a position corresponding to the first landing pad; and fabricating a second RDL on the second wafer to connect the second bonding pad and the first TSV. This wafer stacking method improves the manufacturing yield.

Abstract: A semiconductor device module. The semiconductor device module may include a first substrate; and a semiconductor die assembly, disposed on the first substrate. The semiconductor die assembly may include a first semiconductor die, bonded to the first substrate; a second semiconductor die, disposed over the first semiconductor die; and an electrical connector, disposed between the first semiconductor die and the second semiconductor die, wherein the semiconductor die assembly comprises an insulated gate bipolar transistor (IGBT) die and a freewheeling diode die.

Abstract: In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

Abstract: Provided is an imaging unit more efficiently manufacturable with high dimensional precision. The imaging unit includes: a sensor board including an imaging device, in which the imaging device has a plurality of pixels and allows generation of a pixel signal by receiving outside light in each of the plurality of pixels; a bonding layer including an inorganic insulating material; and a circuit board including a circuit chip and an organic insulating layer, in which a circuit chip has a signal processing circuit that performs signal processing for the pixel signal and is bonded to the sensor board through the bonding layer, and the organic insulating layer covers a vicinity of the circuit chip.

Abstract: A method of manufacturing a module is disclosed. In one example, the method comprises providing at least one solder body with a base portion and an elevated edge extending along at least part of a circumference of the base portion. At least one carrier, on which at least one electronic component is mounted, is placed in the at least one solder body so that the at least one carrier is positioned on the base portion and is spatially confined by the elevated edge.

Abstract: A semiconductor device including: a first silicon layer including a first single crystal silicon and a plurality of first transistors; a first metal layer disposed over the first silicon layer; a second metal layer disposed over the first metal layer; a third metal layer disposed over the second metal layer; a second level including a plurality of second transistors, the second level disposed over the third metal layer; a fourth metal layer disposed over the second level; a fifth metal layer disposed over the fourth metal layer, a connection path from the fifth metal layer to the second metal layer, where the connection path includes a via disposed through the second level, where the via has a diameter of less than 450 nm, where the fifth metal layer includes a global power distribution grid, and where a typical thickness of the fifth metal layer is greater than a typical thickness of the second metal layer by at least 50%.

Abstract: A semiconductor device and methods of forming are provided. The device includes a second die bonded to a first die and a third die bonded to the first die. An isolation material extends along sidewalls of the second die and the third die. A through via extends from the first die into the isolation material. A first passive device disposed in the isolation material, the first passive device being electrically connected to the first die.

Abstract: Provided is a package structure including a substrate, a stiffener ring, an eccentric die, a lid layer, and a buffer layer. The stiffener ring is disposed on the substrate. The stiffener ring has an inner perimeter to enclose an accommodation area. The eccentric die is disposed within the accommodation area on the substrate. The eccentric die is offset from a center of the accommodation area to close to a first side of the stiffener ring. The lid layer is disposed on the stiffener ring and overlays the eccentric die. The buffer layer is embedded in the lid layer between the first side of the stiffener ring and the eccentric die. The buffer layer has a thickness less than a thickness of the lid layer.

Abstract: An integrated circuit includes a semiconductor substrate, contact pads, testing pads, conductive posts, and dummy posts. The contact pads and the testing pads are distributed over the semiconductor substrate. The conductive posts are disposed on the contact pads. The dummy posts are disposed on the testing pads. A height of the conductive posts is greater than a height of the dummy posts.

Abstract: Semiconductor devices having flow controllers configured to reduce mitigation of mold material between stacked layers, and associated systems and methods, are disclosed herein. In some embodiments, the semiconductor device includes a package substrate that has first and second surfaces. First and second die stacks are formed on the first surface and are adjacent to each other. A portion of the first surface extends between the first and second die stacks. A layer of material is adhered to top surfaces of the first and second die stacks and extends at a distance above the package substrate to form a tunnel between the layer of material, opposing sidewalls of the die stacks, and the package substrate. The semiconductor device further includes a flow controller that is adhered to at least a portion of the first surface inside the tunnel that reduces a cross-sectional surface area of at least a portion of the tunnel.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes an isolation structure formed over a substrate, and a first stacked nanostructure and a second stacked nanostructure extending above the isolation structure. The semiconductor device structure includes an inner spacer layer surrounding the first stacked nanostructure, and a dummy fin structure formed over the isolation structure. The dummy fin structure is between the first stacked nanostructure and the second stacked nanostructure, and a capping layer formed over the dummy fin structure. The inner spacer layer is in direct contact with the dummy fin structure and the capping layer.

Abstract: Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.

Abstract: In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

Abstract: An example of a pixel module comprises a module substrate having light emitters disposed on a light-emitter surface and a controller disposed on a controller surface opposed to the light-emitter surface. At least one module electrode is electrically connected to the controller and at least one module electrode is electrically connected to each light emitter. An example of a pixel-module wafer comprises a module source wafer comprising sacrificial portions and module anchors, each sacrificial portion laterally separated from an adjacent sacrificial portion by a module anchor and a pixel module disposed entirely over each sacrificial portion. At least one module tether physically connects each of the pixel modules to at least one of the module anchors. An example of a pixel-module display comprises a display substrate, pixel modules disposed on the display substrate and display electrodes disposed on the display substrate, each display electrode electrically connected to a module electrode.

Abstract: A semiconductor device substrate assembly may include a first substrate, comprising: a first insulator plate; and a first patterned metal layer, disposed on the first insulator plate, wherein the first insulator plate comprises a first material and a first thickness. The assembly may include a second substrate, comprising: a second insulator plate; and a second patterned metal layer, disposed on the second insulator plate, wherein the second insulator plate comprises the first material and the first thickness. The assembly may also include a third substrate, disposed between the first substrate and the second substrate, comprising: a third insulator plate; and a third patterned metal layer, disposed on the third insulator plate, wherein the third insulator plate comprises a second material and a second thickness, wherein at least one of the second material and the second thickness differs from the first material and the first thickness, respectively.

Abstract: An integrated circuit package including a substrate configured to receive one or more high-bandwidth memory (HBM) stacks on the substrate, an interposer positioned on the substrate and configured to receive a logic die on the interposer, a plurality of interposer channels formed in the interposer and connecting the logic die to the one or more HBM stacks, and a plurality of substrate traces formed in the substrate and configured to interface the plurality of interposer channels to the one or more HBM stacks.

Abstract: A package structure is provided. The package structure includes a through substrate via structure, a first stacked die package structure, an underfill layer, and a package layer. The through substrate via structure is formed over a substrate. The first stacked die package structure is over the through substrate via structure. The first stacked die package structure includes a plurality of memory dies. The underfill layer is over the first stacked die package structure. The underfill layer includes a first protruding portion that extends below a top surface of the through substrate via structure. The package layer is over the underfill layer. The package layer has a second protruding portion that extends below the top surface of the through substrate via structure.