Patents Examined by Victor Barzykin
  • Patent number: 8691597
    Abstract: An automatic analyzer detects voltage applied across electrodes, and judges whether voltage value falls within set voltage range. When the detected voltage value is lower than minimum value of set voltage range, the analyzer calculates the deficient amount of base solution based on the detected voltage value, controls a valve to supply the deficient amount of base solution, then, performs operation control of the valve so as to keep the prescribed amount of plating solution in plating solution tank, and discharges plating solution. When the detected voltage value is higher than maximum value of set voltage range, the analyzer calculates the excess amount of base solution based on the detected voltage value, controls a valve, and supplies pure water into the tank so that the base solution concentration falls within prescribed range to dilute plating solution, then controls a valve, and discharges plating solution so as to keep prescribed amount.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: April 8, 2014
    Assignee: Renesas Electronics Corporation
    Inventor: Taku Kanaoka
  • Patent number: 8673699
    Abstract: A method of forming a semiconductor structure which includes an extremely thin silicon-on-insulator (ETSOI) semiconductor structure having a PFET portion and an NFET portion, a gate structure in the PFET portion and the NFET portion, a high quality nitride spacer adjacent to the gate structures in the PFET portion and the NFET portion and a doped faceted epitaxial silicon germanium raised source/drain (RSD) in the PFET portion. An amorphous silicon layer is formed on the RSD in the PFET portion. A faceted epitaxial silicon RSD is formed on the ETSOI adjacent to the high quality nitride in the NFET portion. The amorphous layer in the PFET portion prevents epitaxial growth in the PFET portion during formation of the RSD in the NFET portion. Extensions are ion implanted into the ETSOI underneath the gate structure in the NFET portion.
    Type: Grant
    Filed: July 17, 2012
    Date of Patent: March 18, 2014
    Assignee: International Business Machines Corporation
    Inventors: Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Bala S. Haran, Pranita Kulkarni, Amlan Majumdar, Stefan Schmitz
  • Patent number: 8664091
    Abstract: A method for removing a metallic nanotube, which is formed on a substrate in a first direction, includes forming a plurality of conductors in a second direction crossing the first direction, electrically contacting the plurality of conductors with metallic nanotube, respectively, forming at least two voltage-applying electrodes on the conductors, each of which electrically contacting at least one of the conductors, and applying voltages to at least some of the conductors through the voltage-applying electrodes, respectively. Among the conductors to which the voltages are respectively applied, every two adjacent conductors have an electrical potential difference created therebetween, so as to burn out the metallic nanotube.
    Type: Grant
    Filed: November 21, 2011
    Date of Patent: March 4, 2014
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Huilong Zhu, Zhijiong Luo, Haizhou Yin
  • Patent number: 8633601
    Abstract: The various embodiments of the present invention provide fine pitch, chip-to-substrate interconnect assemblies, as well as methods of making and using the assemblies. The assemblies generally include a semiconductor having a die pad and a bump disposed thereon and a substrate having a substrate pad disposed thereon. The bump is configured to electrically interconnect at least a portion of the semiconductor with at least a portion of the substrate when the bump is contacted with the substrate pad. In addition, when the bump is contacted to the substrate pad, at least a portion of the bump and at least a portion of the substrate pad are deformed so as to create a non-metallurgical bond therebetween.
    Type: Grant
    Filed: July 13, 2010
    Date of Patent: January 21, 2014
    Assignee: Georgia Tech Research Corporation
    Inventors: Nitesh Kumbhat, Abhishek Choudhury, Venkatesh V. Sundaram, Rao R. Tummala
  • Patent number: 8610139
    Abstract: A solid state light source array including a transparent substrate and N rows of solid state light emitting element series is provided. Each row of the solid state light emitting element series includes M solid state light emitting elements connected in series, wherein N, M are integers and N?1, M?2. Each of the solid state emitting elements includes a first type electrode pad and a second type electrode pad. The first and the Mth solid state emitting elements of each row of the solid state light emitting element series are electrically connected to a first conductive line and a second conductive line located on the edges of the first surface via the first type electrode pad and the second type electrode pad, respectively. The first conductive line and the second conductive line are physically disconnected.
    Type: Grant
    Filed: April 17, 2012
    Date of Patent: December 17, 2013
    Assignee: Lextar Electronics Corporation
    Inventors: Chang-Chin Yu, Mong-Ea Lin
  • Patent number: 8563335
    Abstract: A method of controlling a polishing operation includes polishing a substrate, during polishing obtaining a sequence over time of measured spectra from the substrate with an in-situ optical monitoring system, for each measured spectrum from the sequence of measured spectra applying a Fourier transform to the measured spectrum to generate a transformed spectrum thus generating a sequence of transformed spectra, for each transformed spectrum identifying a peak of interest from a plurality of peaks in the transformed spectrum, for each transformed spectrum determining a position value for the peak of interest in the transformed spectrum thus generating a sequence of position values, and determining at least one of a polishing endpoint or an adjustment of a pressure to the substrate from the sequence of position values.
    Type: Grant
    Filed: April 23, 2012
    Date of Patent: October 22, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Dominic J. Benvegnu, Boguslaw A. Swedek
  • Patent number: 8557670
    Abstract: A lateral heterojunction bipolar transistor is formed on a semiconductor-on-insulator substrate including a top semiconductor portion of a first semiconductor material having a first band gap and a doping of a first conductivity type. A stack of an extrinsic base and a base cap is formed such that the stack straddles over the top semiconductor portion. A dielectric spacer is formed around the stack. Ion implantation of dopants of a second conductivity type is performed to dope regions of the top semiconductor portion that are not masked by the stack and the dielectric spacer, thereby forming an emitter region and a collector region. A second semiconductor material having a second band gap greater than the first band gap and having a doping of the second conductivity type is selectively deposited on the emitter region and the collector region to form an emitter contact region and a collector contact region, respectively.
    Type: Grant
    Filed: September 6, 2012
    Date of Patent: October 15, 2013
    Assignee: International Business Machines Corporation
    Inventors: Jin Cai, Kevin K. Chan, Christopher P. D'Emic, Tak H. Ning, Dae-Gyu Park
  • Patent number: 8546203
    Abstract: Method of forming a semiconductor structure which includes an extremely thin silicon-on-insulator (ETSOI) semiconductor structure having a PFET portion and an NFET portion, a gate structure in the PFET portion and the NFET portion, a high quality nitride spacer adjacent to the gate structures in the PFET portion and the NFET portion and a doped faceted epitaxial silicon germanium raised source/drain (RSD) in the PFET portion. Low quality nitride and high quality nitride are formed on the semiconductor structure. The high quality nitride in the NFET portion is damaged by ion implantation to facilitate its removal. A faceted epitaxial silicon RSD is formed on the ETSOI adjacent to the high quality nitride in the NFET portion. The high quality nitride in the PFET portion is damaged by ion implantation to facilitate its removal. Extensions are ion implanted into the ETSOI underneath the gate structure in the NFET portion.
    Type: Grant
    Filed: July 17, 2012
    Date of Patent: October 1, 2013
    Assignee: International Business Machines Corporation
    Inventors: Kangguo Cheng, Bruce B. Doris, Bala S. Haran, Pranita Kulkarni, Nicolas Loubet, Amlan Majumdar, Stefan Schmitz
  • Patent number: 8530257
    Abstract: Methods for improving the temperature performance of AlInGaP based light emitters. Nitrogen is added to the quantum wells in small quantities. Nitrogen is added in a range of about 0.5 percent to 2 percent. The addition of nitrogen increases the conduction band offset and increases the separation of the indirect conduction band. To keep the emission wavelength in a particular range, the concentration of In in the quantum wells may be decreased or the concentration of Al in the quantum wells may be increased. The net result is an increase in the conduction band offset and an increase in the separation of the indirect conduction band.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: September 10, 2013
    Assignee: Finisar Corporation
    Inventor: Ralph Herbert Johnson
  • Patent number: 8525346
    Abstract: An electrical interconnect providing an interconnect between contacts on an IC device and contact pads on a printed circuit board (PCB). The electrical interconnect includes a substrate with a plurality of through holes extending from a first surface to a second surface. A resilient material is located in the through holes. The resilient material includes an opening extending from the first surface to the second surface. A plurality of discrete, free-flowing conductive nano-particles are located in the openings of the resilient material. The conductive particles are substantially free of non-conductive materials. A plurality of first contact members are located in the through holes adjacent the first surface and a plurality of second contact members are located in the through holes adjacent the second surface. The first and second contact members are electrically coupled to the nano-particles.
    Type: Grant
    Filed: April 17, 2012
    Date of Patent: September 3, 2013
    Assignee: HSIO Technologies, LLC
    Inventor: James Rathburn
  • Patent number: 8492228
    Abstract: A method includes forming a first gate stack over a portion of a fin, forming a dummy gate stack over the fin, growing an epitaxial material from exposed portions of the fin, forming a layer of dielectric material over the epitaxial material, the first gate stack, and the dummy gate stack, performing a planarizing process that removes portions of the layer of dielectric material, the first gate stack, and the dummy gate stack, pattering a first mask over portions of the layer of dielectric material and the dummy gate stack, forming a silicide material on exposed portions of the first gate stack, removing the first mask, pattering a second mask over portions of the layer of dielectric material and the first gate stack, removing a polysilicon portion of the dummy gate stack to define a cavity, removing the second mask, and forming a second gate stack in the cavity.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: July 23, 2013
    Assignee: International Business Machines Corporation
    Inventors: Effendi Leobandung, Junli Wang
  • Patent number: 8492208
    Abstract: A method of fabricating a FET device is provided which includes the following steps. Nanowires/pads are formed in a SOI layer over a BOX layer, wherein the nanowires are suspended over the BOX. A HSQ layer is deposited that surrounds the nanowires. A portion(s) of the HSQ layer that surround the nanowires are cross-linked, wherein the cross-linking causes the portion(s) of the HSQ layer to shrink thereby inducing strain in the nanowires. One or more gates are formed that retain the strain induced in the nanowires. A FET device is also provided wherein each of the nanowires has a first region(s) that is deformed such that a lattice constant in the first region(s) is less than a relaxed lattice constant of the nanowires and a second region(s) that is deformed such that a lattice constant in the second region(s) is greater than the relaxed lattice constant of the nanowires.
    Type: Grant
    Filed: January 5, 2012
    Date of Patent: July 23, 2013
    Assignee: International Business Machines Corporation
    Inventors: Guy Cohen, Michael A. Guillorn, Conal Eugene Murray