Abstract: A method for forming a semiconductor arrangement comprises forming a first fin in a semiconductor layer. A first gate dielectric layer includes a first high-k material is formed over the first fin. A first sacrificial gate electrode is formed over the first fin. A dielectric layer is formed adjacent the first sacrificial gate electrode and over the first fin. The first sacrificial gate electrode is removed to define a first gate cavity in the dielectric layer. A second gate dielectric layer including a second dielectric material different than the first high-k material is formed over the first gate dielectric layer in the first gate cavity. A first gate electrode is formed in the first gate cavity over the second gate dielectric layer.

Abstract: A method of aligning micro light emitting elements includes supplying the plurality of micro light emitting elements on a substrate including a plurality of grooves having different shapes, the plurality of micro light emitting elements being configured to be inserted exclusively and respectively into the plurality of grooves; respectively inserting the plurality of micro light emitting elements into the plurality of grooves; and aligning the plurality of micro light emitting elements, wherein at least one groove of the plurality of grooves has a shape that is different from a shape of a respective micro light emitting element inserted into the at least one groove.

Abstract: A semiconductor package which is free of metal debris from backside metallization (BSM) is disclosed. The semiconductor package is singulated by performing a saw street open process from the frontside of the wafer and then includes a singulation process using a plasma etch from the backside of the wafer with BSM. The singulation process results in metal debris free packages.

Abstract: An arrangement, a method of manufacturing component carriers and a component carrier are provided. The arrangement includes a central carrier structure having a front side and a back side, a first layer stack having a first surface structure made of another material than the interior of the first layer stack and covered by a first release layer which is attached to the front side, and a second layer stack covered by a second release layer which is attached to the back side.

Abstract: A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.

Abstract: A wiring board includes: a metal plate having first and second surfaces opposite to each other, and having at least one through-hole penetrating through the first and second surfaces; at least one conductive via respectively disposed in the through-hole and spaced apart from the metal plate; an insulating structure including at least one through-insulating portion disposed between the through-hole and the conductive via, and a first insulating layer and a second insulating layer extending from the through-insulating portion and disposed in first regions surrounding the conductive via, on the first surface and the second surface, respectively; at least one first upper pad disposed on the first insulating layer and electrically connected to the conductive via; at least one first lower pad disposed on the second insulating layer and electrically connected to the conductive via; a second upper pad disposed on the first surface of the metal plate; and a second lower pad disposed on the second surface of the metal

Abstract: An embodiment of the invention provides a fabrication method of a field-effect transistor. The method includes: forming a support structure with a superlattice feature on a semiconductor substrate, where the support structure includes a first semiconductor material layer and a second semiconductor material layer that are alternately disposed, and an isolation layer is disposed on two sides of the support structure; forming, along a boundary between the isolation layer and the support structure, a dummy gate structure that covers the support structure, where a length of the dummy gate structure in a gate length direction is less than the first semiconductor material layer; removing, along the gate length direction, an area other than a sacrificial layer in the first semiconductor material layer to form an insulation groove; and forming a source and a drain in a preset source drain area along the gate length direction.

Abstract: In one example, a semiconductor device, comprises a first redistribution layer (RDL) substrate comprising a first dielectric structure and a first conductive structure through the first dielectric structure and comprising one or more first conductive redistribution layers, an electronic component over the first RDL substrate, wherein the electronic component is coupled with the first conductive structure, a body over a top side of the first RDL substrate, wherein the electronic component is in the body, a second RDL substrate comprising a second dielectric structure over the body, and a second conductive structure through the second dielectric structure and comprising one or more second conductive redistribution layers, and an internal interconnect coupled between the first conductive structure and the second conductive structure. Other examples and related methods are also disclosed herein.

Abstract: A system and method for tuning and infrared source laser in the Mid-IR wavelength range. The system and method comprising, at least, a plurality of individually tunable emitters, each emitter emitting a beam having a unique wavelength, a grating, a mirror positioned after the grating to receive at least one refracted order of light of at least one beam and to redirect the beam back towards the grating, and a micro-electro-mechanical systems device containing a plurality of adjustable micro-mirrors.

Abstract: A Thermal Performance Forecast approach is described that can be used to forecast heating and cooling fuel consumption based on changes to user preferences and building-specific parameters that include indoor temperature, building insulation, HVAC system efficiency, and internal gains. A simplified version of the Thermal Performance Forecast approach, called the Approximated Thermal Performance Forecast, provides a single equation that accepts two fundamental input parameters and four ratios that express the relationship between the existing and post-change variables for the building properties to estimate future fuel consumption. The Approximated Thermal Performance Forecast approach marginally sacrifices accuracy for a simplified forecast.

Abstract: Embodiments may relate to a microelectronic package that includes a die and a backside metallization (BSM) layer positioned on the face of the die. The BSM layer may include a feature that indicates that the BSM layer was formed on the face of the die by a masked deposition technique. Other embodiments may be described or claimed.

Abstract: A micro-transfer printing system comprises a source substrate having a substrate surface and components disposed in an array on, over, or in the substrate surface Each component has a component extent in a plane parallel to the substrate surface. A stamp comprises a stamp body and stamp posts extending away from the stamp body disposed in an array over the stamp body. Each of the stamp posts has (i) a post location corresponding to a component location of one of the components when the stamp is disposed in alignment with the source substrate, and (ii) a post surface extent on a distal end of the stamp post. The post surface extent is greater than the component extent.

Abstract: A chip singulation method includes, in stated order: forming a surface supporting layer on an upper surface of a wafer; thinning the wafer from the undersurface to reduce the thickness to at most 30 ?m; removing the surface supporting layer from the upper surface; forming a first metal layer and subsequently a second metal layer on the undersurface of the wafer; applying a dicing tape onto an undersurface of the second metal layer; applying, onto the upper surface of the wafer, a process of increasing hydrophilicity of a surface of the wafer; forming a water-soluble protective layer on the surface of the wafer; cutting the wafer, the first metal layer, and the second metal layer by irradiating a predetermined region of the upper surface of the wafer with a laser beam; and removing the water-soluble protective layer from the surface of the wafer using wash water.

Abstract: The present disclosure relates to a radio frequency (RF) device and a process for making the same. According to the process, a precursor wafer, which includes device regions, individual interfacial layers, individual p-type doped layers, and a silicon handle substrate, is firstly provided. Each individual interfacial layer is over an active layer of a corresponding device region, each individual p-type doped layer is over a corresponding individual interfacial layer, and the silicon handle substrate is over each individual p-type doped layer. Herein, each individual interfacial layer is formed of SiGe, and each individual p-type doped layer is a silicon layer doped with a p-type material that has a doped concentration greater than 1E18cm-3. Next, the silicon handle substrate is completely removed to provide an etched wafer, and each individual p-type doped layer is completely removed from the etched wafer.

Abstract: The present invention relates to compounds of the formula (1) which are suitable for use in electronic devices, in particular organic electroluminescent devices, and to electronic devices which comprise these compounds.

Abstract: A photoelectric device includes a target substrate, a circuit pattern layer disposed on the target substrate, a plurality of micro photoelectric elements electrically connected to the circuit pattern layer, and a supplemental repair element electrically connected to the circuit pattern layer. The target substrate is configured with a plurality of connection positions and a repair position disposed with an offset with relative to a corresponding one of the connection positions. The offset is greater than or equal to zero. The micro photoelectric elements are individually disposed on at least a part of the connection positions of the target substrate. The supplemental repair element has an electrode disposed on the repair position of the target substrate, and the electrode is connected to the circuit pattern layer. On the target substrate, the supplemental repair element is arbitrary with respect to the micro photoelectric elements.

Abstract: A first x-y translation stage, a second x-y translation stage, and a chuck are disposed in a chamber. The chuck is situated above and coupled to the second x-y translation stage, which is situated above and coupled to the first x-y translation stage. The chuck is configured to support a substrate and to be translated by the first and second x-y stages in x- and y-directions, which are substantially parallel to a surface of the chuck on which the substrate is to be mounted. A first barrier and a second barrier are also disposed in the chamber. The first barrier is coupled to the first x-y translation stage to separate a first zone of the chamber from a second zone of the chamber. The second barrier is coupled to the second x-y translation stage to separate the first zone of the chamber from a third zone of the chamber.

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures. The plurality of lid stacks may at least partially define a plurality of processing regions vertically offset from the transfer region. The systems may include a second lid plate coupled with the plurality of lid stacks. The plurality of lid stacks may be positioned between the first lid plate and the second lid plate. A component of each lid stack of the plurality of lid stacks may be coupled with the second lid plate.

Abstract: A laser beam spot shape correcting method includes a laser beam irradiating step of irradiating a concave mirror with a laser beam, an imaging step of imaging reflected light by a beam profiler, an image forming step of forming an XZ plane image or a YZ plane image from an XY plane image imaged in the imaging step, and a comparing step of comparing the image formed in the image forming step with an XZ plane image or a YZ plane image of an ideal laser beam. A phase pattern displayed on a display unit of a spatial light modulator is changed such that the XZ plane image or the YZ plane image formed in the image forming step coincides with the XZ plane image or the YZ plane image of the ideal laser beam.

Abstract: A method for producing a semiconductor device includes dicing, at a scribe area of a semiconductor wafer, the semiconductor wafer into semiconductor chips including respective circuit areas formed on the semiconductor wafer, the scribe area being provided between the circuit areas and extending in a first direction in a plan view, wherein the scribe area includes a first area extending in the first direction and second areas including monitor pads and extending in the first direction and located on both sides of the first area, wherein the method includes removing at least portions of the monitor pads by emitting laser beam to the second areas before the dicing, and wherein, in the dicing, the semiconductor wafer is diced at the first area.