Abstract: A calibration device is coupled to a communication line shared by plural devices. The calibration device is configured to perform an iterative eye width scanning by adjusting a set voltage level by a preset level from a first voltage level to a reference center voltage level, wherein the first voltage level corresponds to a cross point where values of signals or data, which are transmitted via the communication lines, are changed in different directions; and determine, as a zero crossing for the signals or the data, a voltage level corresponding to a largest value among a plurality of eye widths obtained through the iterative eye width scanning.

Abstract: A programming method of a non-volatile memory cell is provided. The non-volatile memory cell includes a memory transistor. Firstly, a current limiter is provided, and the current limiter is connected between a drain terminal of the memory transistor and a ground terminal. Then, a program voltage is provided to a source terminal of the memory transistor, and a control signal is provided to a gate terminal of the memory transistor. In a first time period of a program action, the control signal is gradually decreased from a first voltage value, so that the memory transistor is firstly turned off and then slightly turned on. When the memory transistor is turned on, plural hot electrons are injected into a charge trapping layer of the memory transistor.

Abstract: In a non-volatile memory system that initially writes data in a binary format and then folds the stored data into a multi-level format, transfers of host data from the memory controller to the memory dies of the system are performed during both foggy and fine phases of the multi-level programming as data latches are released, allowing the transfer times to be hidden behind the programming. To improve data throughput one sub-set of the memory dies perform their foggy phase programming while another sub-set of the memory dies perform their fine phase programming, resulting in non-overlapping transfer windows for host data transfers for the two sub-sets of memory dies.

Abstract: A memory device is provided. The memory device includes a first transistor and a second transistor connected in series with the first transistor. The second transistor is programmable between a first state and a second state. A bit line connected to the second transistor. A sense amplifier connected to the bit line. The sense amplifier is operative to sense data from the bit line. A feedback circuit connected to the sense amplifier, wherein the feedback circuit is operative to control a bit line current of the bit-line.

Abstract: A semiconductor memory device includes a memory cell array having memory strings that include memory cells and first and second selection transistors. During a read operation, a controller applies a first voltage higher than ground to a source line, and a second voltage to a first and second selection gate lines that are connected to a selected memory string. The second voltage is also applied to the first selection gate lines connected to non-selected memory strings during a first period of the read operation. A third voltage higher than ground and lower than the second voltage is applied to the first selection gate lines connected to non-selected memory strings during a second period of the read operation subsequent to the first period.

Abstract: Embodiments of the present disclosure provide a control method, a semiconductor memory, and an electronic device. When the semiconductor memory is in a preset test mode, a first Model Register (MR) and a second MR related to a Data Pin (DQ) are allowed to directly define the impedance of a Data Mask Pin (DM). The DM does not need to add definition of an output driver state and a related control circuit for the preset test mode to ensure that the preset test mode is adapted to the DM. The impedance of the DM may be tested in the preset test mode to avoid circuit processing errors.

Abstract: Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a memory cell, first, second, and third data lines, and first and second access lines. Each of the first, second, and third data lines includes a length extending in a first direction. Each of the first and second access lines includes a length extending in a second direction. The memory cell includes a first transistor including a charge storage structure, and a first channel region electrically separated from the charge storage structure, and a second transistor including a second channel region electrically coupled to the charge storage structure. The first data line is electrically coupled to the first channel region. The second data line is electrically coupled to the first channel region. The third data line is electrically coupled to the second channel region, the second channel region being between the charge storage structure and the third data line.

Abstract: Embodiments herein disclose an OTP low power circuit and methods for providing bias voltages using a single regulator. The circuit includes a Bitcell, a diode drop, a charge pump, a combinational logic controller, a program current sink load, and a read current sink load. The Bitcell includes programmable word lines and read lines, and is configured to operate in either a programmable mode or a read mode. The diode drop is configured to provide a second bias voltage to drive the read lines and the single regulator is configured to provide a first bias voltage to drive the WP in the read mode. The charge pump is configured to provide a third bias voltage to drive the WP in the program mode.

Abstract: A semiconductor chip includes a physical layer and a processing circuit. The physical layer includes at least one sequence checking circuit and at least one signal transmission path, wherein the at least one sequence checking circuit is configured to generate at least one test result signal according to a clock signal and at least one test data signal transmitted through the at least one signal transmission path, and the clock signal is not transmitted through the at least one signal transmission path. The processing circuit is electrically coupled to the physical layer and is configured to determine an operation status of the at least one signal transmission path according to the voltage level of the at least one test result signal.

Abstract: A peripheral circuit of a memory device includes a compensation circuit, a determination circuit, and a plurality of page buffers. The compensation circuit defines a leakage current. The determination circuit is coupled to the compensation circuit, and is operated according to the leakage current. The determination circuit includes a current source, a first current mirror, a second current mirror, a potentially-qualified-bit quantity control unit, a determination circuit enable control unit, a hysteresis circuit, and a first logic unit. The page buffers include an unselected page buffer and a selected page buffer. The unselected page buffer is coupled to the compensation circuit. The selected page buffer is coupled to the determination circuit.

Abstract: A semiconductor device, and a method of operating the same, includes a memory cell array, a peripheral circuit, and control logic. The memory cell array includes a plurality of memory cells. The peripheral circuit is configured to perform a program operation on memory cells selected from among the plurality of memory cells. The control logic is configured to control the program operation of the peripheral circuit. The control logic is configured to control the peripheral circuit to precharge bit lines respectively coupled to the selected memory cells to different voltage levels during a verify operation included in the program operation.

Abstract: An impedance matching circuit includes a driver circuit, a calibration circuit, a digital logic circuit, a receiving circuit and a first resistor. An output of the driver circuit is connected to the receiving circuit, and an output of the calibration circuit is connected to the first resistor. The calibration circuit is configured to cooperate with the driver circuit to perform calibration according to the impedance values of the first resistor and the receiving circuit to determine a plurality of calibration parameters obtained at different output level values. The digital logic circuit is configured to receive the plurality of calibration parameters and determine a respective target calibration parameter of each of the at least one transistor slice in the driver circuit. The driver circuit is configured to receive the target calibration parameter, and perform impedance adjustment on the at least one transistor slice according to the target calibration parameter.

Abstract: An off-chip driving device and a driving capability enhancement method thereof are provided. Detecting a rising edge and a falling edge of an input data signal. A first enhancement circuit is controlled to provide a first enhancement signal to an input/output pad according to the rising edge and the falling edge of the input data signal.

Abstract: A method of processing a memory system that includes a substrate with a connector and a semiconductor memory chip connected to the connector is provided. The method includes detaching the semiconductor memory chip from the connector, performing an annealing process with respect to the semiconductor memory chip detached from the connector, and after the annealing process, attaching the semiconductor memory chip to the connector on the substrate.

Abstract: A semiconductor memory device includes a first pad, a clock generation circuit configured to generate a first clock, an output circuit configured to output the first clock through the first pad, a designation circuit configured to designate one of a plurality of contiguous times slots, each of which is set with respect to clock cycles of the first clock, and a peak control circuit configured to execute an operation that generates a current peak, at a timing corresponding to the designated time slot.

Abstract: Apparatuses and methods for configurable memory array bank architectures are described. An example apparatus includes a mode register configured to store information related to bank architecture and a memory array including a plurality of memory banks. The plurality of memory banks are configured to be arranged in a bank architecture based at least in part on the information related to bank architecture stored in the mode register.

Abstract: Embodiments of the disclosure provide a circuit structure and related method to provide a radiation resistant memory cell. A circuit structure may include a first latch having an input node and an output node. A second latch has an input node and an output node, in which the output node of the second latch is coupled to the input node of the first latch, and the input node of the second latch is coupled to the output node of the first latch. A read/write (R/W) circuit includes a plurality of transistors coupling a word line, a bit line, and an inverted bit line to at least two outputs. One of the at least two outputs is coupled to the input node of the first latch and another of the outputs is coupled to the input node of the second latch.

Abstract: A memory circuit includes a NAND logic gate configured to receive a first bit line signal and a second bit line signal, and to generate a first signal. The memory circuit further includes a first P-type transistor coupled to the NAND logic gate, and configured to receive a first clock signal. The memory circuit further includes a first N-type transistor coupled to the NAND logic gate, and configured to receive a first pre-charge signal. The memory circuit further includes a first latch coupled to the NAND logic gate, and configured to latch the first signal in response to at least the first clock signal or the first pre-charge signal.

Abstract: The present technology relates to a memory device and a method of operating the memory device. The memory device includes a memory block including a plurality of memory cells corresponding to a plurality of word line groups, a source line driver configured to apply an erase voltage to a source line of the memory block during an erase operation, a voltage generation circuit configured to apply an operation voltage increasing from a first operation voltage to a second operation voltage to the plurality of word line groups during the erase operation, and a control logic configured to control the source line driver and the voltage generation circuit to perform a suspend operation of stopping the erase operation.

Abstract: Disclosed semiconductor devices include a substrate, a device pattern structure disposed over the substrate, and a heat insulating layer disposed on the device pattern structure. The device pattern structure includes metal-organic frameworks.