Abstract: A side pumped laser comprises an elongated gain medium (10) provided between an output coupler (20) and a counter reflector (15) and a pump source (65) configured to provide radiation to the gain medium (10) along a side axis of the gain medium, wherein the laser is configured such that radiation from the pump source is directly incident on the gain medium; and the pump source is provided proximate, adjacent or in contact with the gain medium. The laser material and compositions, geometries and dimensions are designed to both maximize laser performance and to permit the use of construction techniques commonplace in the production of equipment designed for optical telecoms systems to facilitate low cost high volume and miniaturization.

Abstract: A power semiconductor device comprising a power semiconductor module and a heat sink; and a method for its manufacture. The module has a cooling plate, with an opening delimited by a lateral first surface thereof extending circumferentially around the opening. The cooling plate is arranged in the opening and has a lateral first surface which extends circumferentially around the cooling plate. The two first surfaces are at a respective angle of less than 90° with respect to a main surface of the cooling plate facing the power semiconductor components. The two first surfaces are pressed together, extending circumferentially along the first surface of the cooling plate and extending circumferentially along the first surface of the heat sink. The inventive power semiconductor device has good heat conduction from the power semiconductor components to the heat sink through which a liquid can flow, and which is reliably leaktight over the long term.

Abstract: A heterostructure field effect transistor (HFET) gallium nitride (GaN) semiconductor power device comprises a hetero junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer. The power device further comprises a source electrode and a drain electrode disposed on two opposite sides of a gate electrode disposed on top of the hetero junction structure for controlling a current flow between the source and drain electrodes in the 2DEG layer.

Abstract: Embodiments of the invention describe various configurations for a multi-wavelength laser cavity. A laser cavity may include a shared reflector and a plurality of reflectors. Each of the plurality of reflectors and the shared reflector together form one of the plurality of output wavelength channels. A shared filter is utilized to filter the optical signal of the laser cavity to comprise a subset of a plurality of cavity modes. A (de)multiplexer, comprising a plurality of filtering elements), receives the optical signal and further selects and separates the final lasing wavelengths from the selected subset of cavity modes, and each filtering element outputs an optical signal having a wavelength for one of the output wavelength channels.

Abstract: A tunable swept multi-laser system comprising a first laser source, a second laser source, a first wavelength blocking component, and a second wavelength blocking component. The first laser source has a first wavelength working range and the second laser source has a second wavelength working range. The first wavelength working range begins at a first start wavelength and ends at a first end wavelength. The second wavelength working range begins at a second start wavelength, ends at a second end wavelength, and overlaps with the first wavelength working range. The first wavelength blocking component has a first wavelength blocking range including the first end wavelength. The second wavelength blocking component has a second wavelength blocking range including the second start wavelength. The first wavelength blocking component is optically coupled with the first laser source and the second wavelength blocking component is optically coupled with the second laser source.

Abstract: [Problem] In an optical amplifier, the excitation light level of an excited laser diode decreases, or, when the output of an excitation light is stopped, a backup excited laser diode is operated, and therefore the current consumption increases. [Solution] This optical amplifier is provided with multiple excitation laser diodes, a first current control element, a second current control element, and control means. The excitation laser diodes oscillate excitation light, the excitation light being inputted to an optical fiber amplifier. The first current control element controls a current flowing in the excitation laser diodes. The second current control element controls a current flowing in at least one of the excitation laser diodes. The control means controls the first current control element and the second current control element.

Abstract: Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.

Abstract: A trench MOSFET including: an epitaxial layer; a body region on the epitaxial layer, the body region and the epitaxial layer forming a first interface; a trench; a trench bottom oxide in the trench; and polysilicon in the trench, the trench bottom oxide and the polysilicon forming a second interface; where the first and second interfaces are substantially aligned or are at substantially the same level.

Abstract: A light-emitting system is introduced herein. The light-emitting system includes an insulating substrate and a plurality of light-emitting units electrically-connected on the insulating substrate. Each of the plurality of light-emitting units includes a plurality of light-emitting diodes arranged as a bridge rectifier. A first part of the plurality of light-emitting diodes emits light during positive half cycles of an AC power signal. A second part of the plurality of light-emitting diodes emits light during negative half cycles of the AC power signal. The third part of the plurality of light-emitting diodes comprising at least one light-emitting diode emits light during both the positive half cycles and the negative half cycles of the AC power signal, wherein the plurality of light-emitting units including the plurality of light-emitting diodes arranged as a bridge rectifier is formed together in a light-emitting chip.

Abstract: A method for producing high efficiency organic light emitting devices, that have an organic semiconductor active layer sandwiched between electrodes where at least one of the electrodes is a film of conductive nanowires, carbon nanoparticles, light scattering nanoparticles and a polymer support. The light scattering nanoparticles can be incorporated in the conductive nanowires, carbon nanoparticle or polymer support elements of the electrode. The second electrode can be identical to the first to provide a symmetrical device or can be a conductive paste or metal layer. The entire process, including the formation of both of the electrodes, the emissive polymer layer, and the substrate, may be carried out by solution processing.

Abstract: A laser apparatus may comprise: a laser chamber configured to include a laser gain medium; a pair of electrodes disposed in the laser chamber; an energy detector configured to measure pulse energy of laser beams outputted by discharging between the pair of the electrodes; an optical element disposed on a light path of the laser beams; and a controller configured to calculate an integration value of absorption energy at the optical element, and determine whether the integration value exceeds a lifetime integration value of the optical element based on the pulse energy of the laser beams.

Abstract: A method comprising using a pulse shaper in the spectral domain to generate multiple-color pulses directly at the output of the laser amplifier. The delay can thus be controlled directly in the spectral domain and there is no need for an optical delay line. The method allows reducing the number of optical components and insures insensitivity to alignment, vibrations and turbulence on long distance propagation and filamentation, particularly in air. The method allows programmable and tunable interaction, since the pulse shaper is able to control the laser spectral amplitude and phase.

Abstract: A graphene illuminator includes two electrodes, an accelerating electric field power supply, and several magnet sets, and further includes a graphene material used for providing free-electrons. The two electrodes are respectively disposed on both sides or at both ends of the graphene material, and meanwhile are both disposed on a plane where the graphene material is disposed; a positive electrode and a negative electrode of the accelerating electric field power supply are respectively connected to the two electrodes, to apply, in a first direction, an accelerating electric field to the graphene material; and the magnet sets are disposed on upper and lower sides of the plane where the graphene material is disposed, to generate a magnetic field perpendicular to the plane where the graphene material is disposed, and South poles and North poles of the magnet sets are arranged alternately to generate an alternating magnetic field in a second direction.

Abstract: Laser-induced damage in an optical material can be mitigated by creating conditions at which light absorption is minimized. Specifically, electrons populating defect energy levels of a band gap in an optical material can be promoted to the conduction band—a process commonly referred to as bleaching. Such bleaching can be accomplished using a predetermined wavelength that ensures minimum energy deposition into the material, ideally promoting electron to just inside the conduction band. In some cases phonon (i.e. thermal) excitation can also be used to achieve higher depopulation rates. In one embodiment, a bleaching light beam having a wavelength longer than that of the laser beam can be combined with the laser beam to depopulate the defect energy levels in the band gap. The bleaching light beam can be propagated in the same direction or intersect the laser beam.

Abstract: A method and system for protecting against communication loss or disruption in an optical network system includes a signal state detector, which can measure received optical signals and determine if their strength is sufficient to support reliable communications. If the signal state detector informs the control circuit that the received optical signal is too low to support communications with the data service hub (or if there is no signal at all, such as in a severance of an optical waveguide), then the control circuit can instruct the data switch to re-route communications from the primary communication path to a secondary or back up communication path. This switching or re-routing of communications from a primary communication path which is non-functional or inoperative to an operational and fully functional communication path (a back up or secondary communication path) can be completed in a very short time, such as within fifty milliseconds or less.

Abstract: A photovoltaic cell manufacturing method includes depositing a first buffer layer for performing lattice relaxation on a first silicon substrate; depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed with a compound semiconductor including a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than that of silicon; connecting a support substrate to the first photoelectric conversion cell to form a first layered body; and removing the first buffer layer and the first silicon substrate from the first layered body.

Abstract: In a high-power diode laser, facets which lie opposite one another contain in each case an amorphous layer system composed of silicon and carbon. The layer system is formed to perform the function both of a passivation layer and of the reflection-determining functional layers. This measure makes it possible to produce a high-power diode laser having a high COD threshold in conjunction with a long service life by way of a simplified method.

Abstract: A laser medium 21 is shaped like a plate and has a waveguide structure in a direction of the thickness of a surface thereof perpendicular to the optical axis thereof. A nonlinear material 31 is placed on the optical axis of the laser medium 21 close to the laser medium 21 and has a waveguide structure in the same direction as that of the waveguide structure of the laser medium 21. A ¼ wavelength plate 41 is placed close to one of surfaces, which are perpendicular to the optical axis, of the nonlinear material 31, the one being opposite to a surface close to the laser medium 21.

Abstract: An ultraviolet laser diode having multiple portions in the n-cladding layer is described herein. The laser diode comprises a p-cladding layer, an n-cladding layer, a waveguide, and a light-emitting region. The n-cladding layer includes at least a first portion and a second portion. The first portion maintains material quality of the laser diode, while the second portion pulls the optical mode from the p-cladding layer toward the active region. The first portion may have a higher aluminum composition than the second portion. The waveguide is coupled to the n-cladding layer and the light-emitting region is coupled to the waveguide. The light-emitting region is located between the n-cladding layer and the p-cladding layer. Other embodiments are also described.

Abstract: One method includes forming a mandrel element above a hard mask layer, forming first and second spacers on the mandrel element, removing the mandrel element, a first opening being defined between the first and second spacers and exposing a portion of the hard mask layer and having a longitudinal axis extending in a first direction, forming a block mask covering a middle portion of the first opening, the block mask having a longitudinal axis extending in a second direction different than the first direction, etching the hard mask layer in the presence of the block mask and the first and second spacers to define aligned first and second line segment openings in the hard mask layer extending in the first direction, etching recesses in a dielectric layer disposed beneath the hard mask layer based on the first and second line segment openings, and filling the recesses with a conductive material.