Abstract: An optical device comprising: a substrate; a cavity structure on the substrate, comprising a quantum emitter in contact with one or more semiconductor layers; wherein the or all of the semiconductor layers in contact with the quantum emitter have a thickness larger than the height of the quantum emitter.

Abstract: A method of manufacturing a display device includes: forming a gate electrode on a substrate; forming a gate insulating film on the substrate; forming an oxide semiconductor on the substrate; forming a source electrode and a drain electrode on the substrate; forming a passivation film on the substrate; forming a common electrode on the substrate; forming an interlayer insulating film on the substrate; forming a pixel electrode on the substrate; forming an alignment film on the substrate; radiating UV-rays onto the oxide semiconductor; and heat-treating the oxide semiconductor irradiated with the UV-rays. The radiating UV-rays is performed after the forming an oxide semiconductor, and the heat-treating is performed after the forming a passivation film.

Abstract: Heating within a plane of a substrate may be uniform while a thermal budget is decreased. A substrate processing apparatus includes a process chamber configured to accommodate a substrate; a substrate mounting unit installed in the process chamber and configured to have the substrate placed thereon; an electromagnetic wave supply unit configured to supply an electromagnetic wave to the substrate placed on the substrate mounting unit; and a choke groove formed on a side surface of the substrate mounting unit.

Abstract: The present invention is applicable to the field of fiber laser technologies. In the present invention, two fiber lasers of different bands are used as seed sources to form a dual-band fiber laser that outputs beams of two bands simultaneously, and the dual-band fiber laser is used to pump the cascaded evolving assemblies.

Abstract: The invention relates to bi-directional long-cavity semiconductor lasers for high power applications having two AR coated facets (2AR) to provide an un-folded cavity with enhanced output power. The lasers exhibit more uniform photon and carrier density distributions along the cavity than conventional uni-directional high-power lasers, enabling longer lasers with greater output power and lasing efficiency due to reduced longitudinal hole burning. Optical sources are further provided wherein radiation from both facets of several 2AR lasers that are disposed at vertically offset levels is combined into a single composite beam.

Abstract: A first contact surface of a semiconductor laser chip can be formed to a first target surface roughness and a second contact surface of a carrier mounting can be formed to a second target surface roughness. A first bond preparation layer comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer comprising a second metal can optionally be applied to the formed second contact surface. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.

Abstract: An improved laser safety shutter is provided for the main supply power to the laser diode to be routed through an electronic shutter that prevents the passing of the supply power to the laser diodes to achieve laser shutdown or in the event of a control power failure. The main power is routed through a rectifier to convert the incoming alternating current (AC) feed to direct current (DC) power. A switching array operates in an alternating cycle so as to provide AC power to be transformed and passed along to the laser diode pump on the load side of the transformer. When shut down of the laser is desired or when power to the controller fails, the switches stop operating and the resultant DC power cannot be passed by the transformer effectively cutting the supply power to the laser diodes.

Abstract: One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.

Abstract: A method and apparatus for launching optical pump signals into a disordered gain medium at two points thereby producing a narrow line-width random fiber laser within the disordered gain medium. The optical pump signals are propagated in a direction through the disordered gain medium towards one another. The apparatus may comprise an optical gain fiber having a first end configured to receive a first fiber pump signal and a second end configured to receive a second fiber pump signal such that the first fiber pump signal and the second fiber pump signal propagate within the optical gain fiber in a direction towards one another. An optical loss device is coupled to the optical gain fiber, wherein the optical loss device isolates a narrow line-width random fiber laser signal from a signal generated within the optical gain fiber.

Abstract: An organic light-emitting diode (OLED) display and a method of manufacturing the same are disclosed. In one aspect, the method includes performing a first mask process of forming an active layer of a thin-film transistor (TFT) over a substrate and performing a second mask process of i) forming a gate insulating layer over the active layer and ii) forming a gate electrode of the TFT over the gate insulating layer. The method also includes performing a third mask process of i) forming an interlayer insulating layer over the gate electrode and ii) forming a contact hole in the interlayer insulating layer so as to expose a portion of the active layer and performing a fourth mask process of forming a pixel electrode over the interlayer insulating layer.

Abstract: A source of optical supercontinuum radiation comprises a length of microstructured optical fiber and a pump laser adapted to generate lasing radiation at a pump wavelength. The length of microstructured optical fiber is arranged to receive lasing radiation at the pump wavelength to generate optical supercontinuum radiation and comprises a core region and a cladding region which surrounds the core region.

Abstract: Methods of treating an emission spectrum of visible light emitted from a light emitting source, and resulting apparatus, are disclosed. The methods include obtaining the visible light emission spectrum emitted from the light emitting source and a desired visible light emission spectrum. The methods may also include determining at least one wavelength of the emission spectrum of the source with an irradiance or intensity that is less than that of the desired emission spectrum. The methods may include selecting at least one pigment that is effective in tuning the emission spectrum of the source by increasing the intensity or irradiance of the at least one wavelength. The methods may include applying the at least one pigment to the light emitting source to treat the emission spectrum emitted therefrom.

Abstract: A production methods includes providing a substrate including a lattice plane that extends in a non-symmetrical manner and such that it is offset at an angle ? from at least a first or second main surface region of the substrate, the first and second main surface regions extending parallel to each other; anisotropic etching, starting from the first main surface region, into the substrate so as to obtain an etching structure which includes, in a plane extending perpendicularly to the first main surface region, two different etching angles relative to the first main surface region; arranging a cover layer on the first main surface region, so that the cover layer lies against the etching structure in at least some sections; and removing, section-by-section, the material of the substrate starting from the second main surface region in the area of the deformed cover layer, so that the cover layer is exposed in at least one window region.

Abstract: In one implementation, a method of fabricating a power semiconductor package is disclosed. The method includes providing a conductive carrier array including a plurality of power modules held together with connecting bars, where each of the plurality of power modules includes a control transistor, a sync transistor, and a driver IC. The method further includes overlying on the conductive carrier array a heat spreader array including a plurality of power electrode heat spreaders such that each of the plurality of power electrode heat spreaders couples a drain of the sync transistor to a source of the control transistor in each power module.

Abstract: A photovoltaic device includes an inorganic substrate having a surface; an organic monolayer disposed onto the surface of the inorganic substrate, the inorganic monolayer having the following formula: ˜X—Y, wherein X is an oxygen or a sulfur; Y is an alkyl chain, an alkenyl chain, or an alkynyl chain; and X covalently bonds to the surface of the inorganic substrate by a covalent bond; a doped organic material layer disposed onto the organic monolayer; and a conductive electrode disposed onto a portion of the doped organic material.

Abstract: A high-power laser system includes a plurality of cascaded diode drivers, a pump source, and a laser element. The diode drivers are configured to generate a continuous driver signal. The pump source is configured to generate radiated energy in response to the continuous driver signal. The laser element is disposed downstream from the pump source and is configured to generate a laser beam in response to stimulation via the radiated energy. The high-power laser system further includes an electronic controller configured to output at least one driver signal that operates the plurality of diode drivers at a fixed frequency. The at least one driver signal operates a first cascade diode driver among the plurality of diode drivers 90 degrees out of phase with respect to a second cascade diode driver among the plurality of diode drivers.

Abstract: An organic light-emitting display (OLED) device includes: a pixel area defined by a plurality of pixels on a flexible substrate; a non-pixel area around the pixel area; a gate driver in the non-pixel area; a structure in the non-pixel area configured to surround the pixel area; a first encapsulation layer covering the plurality of pixels, the gate driver and the structure; and a particle cover layer covering the pixel area and suppressed from being excessively spread by the structure.

Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.

Abstract: A compact optical system is provided. The system includes a first optical module, a first substrate, a second optical module, and a second substrate. The first optical module is utilized to modulate a laser beam. The first substrate supports the first optical module, and the first substrate defines a first optical via such that the laser beam can pass through the first substrate through the first optical via. The second optical module receives the laser beam from the first optical via for modulating the laser beam. The second substrate is disposed parallel to the first substrate and away from the first substrate with a first predetermined distance and utilized to support the second optical module. An ultrafast laser thereof is further provided.