Abstract: A semiconductor laser device that enables flip-chip assembly by having an embedding section around a mesa section, and that has an improved emission lifetime, as well as a photoelectric converter and an optical information processing unit each having such a semiconductor laser device. The semiconductor laser device includes: a mesa section including an active layer, and having a first electrode on a top surface; an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and a first wiring provided on the embedding section overlaying the first connection aperture, the first wiring being electrically connected to the first electrode through the first connection aperture.

Abstract: Methods for fabricating busbar and finger metallization over TCO are disclosed. Rather than using expensive and relatively resistive silver paste, a high conductivity and relatively low cost copper is used. Methods for enabling the use of copper as busbar and fingers over a TCO are disclosed, providing good adhesion while preventing migration of the copper into the TCO. Also, provisions are made for easy soldering contacts to the copper busbars.

Abstract: The embodiments and methods described are directed to a solid-state laser module having a first end, a second end, and a surface between the first end and the second end. A mounting component is placed in communication with at least a portion of the surface of the laser module for selectively securing the laser module to a chamber wall of a chamber.

Abstract: Optical pulse source for generating optical supercontinuum pulses, comprising an optical pump laser operable to generate optical pump pulses at a pump pulse repetition rate Rf; a nonlinear optical element comprising a microstructured optical fiber arranged to receive the optical pump pulses and configured to spectrally broaden the optical pump pulses to generate optical supercontinuum pulses; an optical modulator provided between the optical pump laser and the microstructured optical fiber and operable to selectively control the launch of optical pump pulses into the microstructured optical fiber at a variable, reduced repetition rate Rr=Rf/N, wherein N is a positive integer, to thereby control the repetition rate of optical supercontinuum pulses generated within the nonlinear optical element; and wherein the optical pulse source is configured to provide a plurality of different repetition rates and nominally identical spectral broadening for the different repetition rates.

Abstract: A light source system that generates stable optical power over time and temperature in which a feedback control circuit is operative to receive a temperature signal and a sample signal and in response thereto generate a control signal to a driver circuit to maintain a power level of the light output substantially constant over an operative temperature range defined by Tmin and Tmax.

Abstract: A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer.

Abstract: A method of providing supercontinuum illumination in applications involving the excitation of fluorescence, comprising generating, at an optical pump laser, optical pump pulses at a pump pulse repetition rate; selectively controlling with an optical modulator the launch of pump pulses into a nonlinear optical element comprising an optical fiber at a variable, lower repetition rate to thereby selectively control the repetition rate of supercontinuum pulses generated within the optical fiber; and illuminating a sample with supercontinuum pulses to excite fluorescence. The supercontinuum pulses can be wavelength filtered such that the fluorescence is excited with wave length filtered supercontinuum pulses.

Abstract: A method for controlling a wavelength tunable laser is disclosed. The method comprises the steps of: calculating a lasing wavelength from two or more kinds of parameters, the parameters designating the target lasing wavelength; acquiring a driving condition from a memory, the wavelength tunable laser being operable to generate a laser beam of a first wavelength in the driving condition; and calculating another driving condition from the driving condition thus acquired and a wavelength difference between the first wavelength and a second wavelength, the second wavelength corresponding to the lasing wavelength, the wavelength tunable laser being operable to generate a laser beam of the second wavelength in the another driving condition, the wavelength tunable laser being driven in the another driving condition.

Abstract: Laser systems with reduced apparent speckle are provided. The laser systems emit laser light having different mode structures that change within a time period of an integration period of an imaging system used to observe a field of view that is at least in part illuminated by the laser systems.

Abstract: A wafer-level method for fabricating a plurality of cameras includes modifying an image sensor wafer to reduce risk of the image sensor wafer warping, and bonding the image sensor wafer to a lens wafer to form a composite wafer that includes the plurality of cameras. A wafer-level method for fabricating a plurality of cameras includes bonding an image sensor wafer to a lens wafer, using a pressure sensitive adhesive, to form a composite wafer that includes the plurality of cameras.

Abstract: A fiber laser processing device includes: an air purge unit having a low-dew-pointizer section for changing compressed air for purging supplied from the exterior into dry air with a low dew point by means of a gas separation membrane module; a fiber laser oscillator having a combiner for combining and emitting the laser lights respectively outputted from the plurality of fiber laser modules to the exterior, and a distributor for distributing and supplying the dry air respectively to the plurality of fiber laser modules; and a laser processing machine for carrying out laser machining on a workpiece by means of the laser lights emitted from the combiner.

Abstract: The present invention is directed to a semiconductor memory device including a plurality of first level contacts arranged in a rectangular array with parallel columns directed along a first direction and parallel rows directed along a second direction. The rectangular array of the plurality of first level contacts have a first pitch and a second pitch along the first and second directions, respectively. The memory device further includes a first and second plurality of second level contacts formed on top of the first level contacts with the first plurality of second level contacts electrically connected to odd columns along the second direction of the first level contacts and the second plurality of second level contacts electrically connected to even columns of the first level contacts; and a first and second plurality of memory elements formed on top of the first and second plurality of second level contacts, respectively.

Abstract: Included are embodiments of a quantum cascade laser structure. Some embodiments include a plurality of quantum wells and a plurality of barriers, at least a portion of which define an active region. In some embodiments, a photon is emitted in the active region when an electron transitions from an upper laser state in the active region to a lower laser state in the active region. Additionally, a final quantum well in the plurality of quantum wells may define the active region, where the final quantum well extends below an adjacent quantum well in the active region. Similarly, the final quantum well may include a thickness that is less than a thickness of the adjacent quantum well in the active region.

Abstract: A method can be used to produce a semiconductor component. A semiconductor layer sequence has an active region that is provided for generating radiation and also has an indicator layer. Material of the semiconductor layer sequence that is arranged on that side of the indicator layer that is remote from the active region is removed in regions. The material is removed using a dry-chemical removal of the semiconductor layer sequence. A property of a process gas is monitored during the removal to determine that the indicator layer has been reached based on a change in the property of the process gas.

Abstract: Provided is a method of measuring a recombination lifetime of a silicon substrate, which is capable of evaluating metal contamination and crystal defects in a silicon substrate manufacturing process and a device manufacturing process with high accuracy. The method includes: measuring a recombination lifetime of a silicon substrate after subjecting a surface of the silicon substrate to chemical passivation processing; and performing ultraviolet protection processing of protecting at least the silicon substrate from ultraviolet rays during a period from the chemical passivation processing to a time when the measurement of the recombination lifetime is completed.

Abstract: An optical fiber 10 propagates a light beam at a predetermined wavelength at least in an LP01 mode and an LP02 mode. In regions 11a and 11c in which the intensity of a light beam in the LP02 mode is greater than the intensity of a light beam in the LP01 mode, at least a part of a Young's modulus in the region 11c on the circumferential side of the region 11b in the core in which the intensity of the light beam in the LP01 mode is greater than the intensity of the light beam in the LP02 mode is smaller than a Young's modulus in the region 11b in which the intensity of the light beam in the LP01 mode is greater than the intensity of the light beam in the LP02 mode.

Abstract: A memory stack structure for a three-dimensional device includes an alternating stack of insulator layers and spacer material layers. A memory opening is formed through the alternating stack. A memory material layer, a tunneling dielectric layer, and a silicon oxide liner are formed in the memory opening. A sacrificial liner is subsequently formed over the tunneling dielectric layer. The layer stack is anisotropically etched to physically expose a semiconductor surface of the substrate underneath the memory opening. The sacrificial liner may be removed prior to, or after, the anisotropic etch. The silicon oxide liner is removed after the anisotropic etch. A semiconductor channel layer can be deposited directly on the tunneling dielectric layer as a single material layer without any interface therein.

Abstract: Optical pulse source, for generating optical supercontinuum pulses, comprising: an optical pump laser operable to generate a number of optical pump pulses at a pump pulse repetition rate; a nonlinear optical element arranged to receive optical pump pulses and configured to generate therefrom optical supercontinuum pulses; and a gating device provided between the pump laser and the nonlinear optical element and operable to selectively limit the number of optical pump pulses received by the nonlinear optical element in order to generate optical supercontinuum pulses at a user selectable repetition rate lower than the pump pulse repetition rate, wherein the optical pulse source further comprises a second gating device provided after the nonlinear optical element.

Abstract: A laser includes a wavelength selecting element 14 that selectively reflects laser beams with wavelengths ?=?0, ?1, ?2, . . . , ?n (n?1) of different laser oscillation modes from among fundamental oscillation wavelengths of laser beams passing through a wavelength conversion element 13, and the wavelength conversion element 13 that converts the laser beams with the wavelengths ?=?0, ?1, ?2, . . . , ?n (n?1) of different laser oscillation modes reflected by the wavelength selecting element 14 to harmonics. When using a material with a wide gain band as a laser medium 121 of a solid-state laser element 12, a waveguide laser is implemented capable of carrying out high-efficiency wavelength conversion at a plurality of wavelengths within the gain band.

Abstract: The embodiments of the invention disclose a hollow white composite quantum dot preparation method, a display panel and a display device. In the preparation method, unicolor quantum dots of different colors are prepared into corresponding unicolor quantum dot emulsions through an emulsion polymerization technique, dissolved silicon dioxide nano particles are used as a seed solution, the individual unicolor quantum dot emulsions are dropped in the seed solution in sequence, such that the surfaces of the silicon dioxide nano particles are coated with the unicolor quantum dots in the individual unicolor quantum dot emulsions in sequence according to the dropping order so as to obtain white composite quantum dots, and finally, the silicon dioxide nano particles in the white composite quantum dots are removed to obtain hollow white composite quantum dots.