Abstract: A fan module is adapted to be disposed on a mainboard. The fan module includes a base, a stator unit, a circuit board, a first restriction structure and a second restriction structure. The base includes a mounting shaft and a base opening, wherein the mounting shaft has an axis. The mounting shaft is telescoped in the stator unit. The circuit board is coupled to the stator unit, wherein the circuit board includes a circuit board connection port. The first restriction structure restricts the circuit board, wherein the first restriction structure is arranged on the first straight line, and the first restriction structure is disposed a first distance away from the axis. The second restriction structure restricts the circuit board, wherein the second restriction structure is arranged on the second straight line, the second restriction structure is disposed a second distance away from the axis.

Abstract: A power supply unit supplies power to a load, and the power supply unit includes a power factor corrector, a DC conversion module, and an isolated conversion module. The power factor corrector is plugged into a first main circuit board and converts an AC power into a DC power. The DC conversion module is plugged into the first main circuit board and converts the DC power into a main power. The isolated conversion module includes a bus capacitor, the bus capacitor is coupled to the DC conversion module through a first power copper bar, and coupled to the power factor corrector through a second power copper bar. The first power copper bar and the second power copper bar are arranged on a side opposite to the first main circuit board, and are arranged in parallel with the first main circuit board.

Abstract: A planar transformer is configured on a multi-layer circuit board of a resonant converter. The planar transformer includes multiple layers of primary-side traces, multiple layers of secondary-side traces, and an iron core. The primary-side traces serve as a primary-side coil of the transformer to generate a first direction magnetic flux when the resonant converter operates. The secondary-side traces serve as a secondary-side coil of the transformer to generate a second direction magnetic flux when the resonant converter operates. The primary-side traces and the secondary-side traces surround a first core pillar and the second core pillar, and the primary-side traces and the secondary-side traces are configured in a specific stacked structure on the multi-layer circuit board, so that a magnetomotive force of the planar transformer can maintain balance during the operation of the resonant converter.

Abstract: A planar magnetic component is arranged on a circuit board of a resonant converter, and the resonant converter includes a primary-side circuit and a secondary-side circuit. The planar magnetic component includes an inductor trace, a primary-side trace, a secondary-side trace, and an iron core assembly. The iron core assembly includes an inductor iron core and an iron core. The primary-side trace surrounds the first through hole in a first direction and surrounds the second through hole in a second direction to form an ?-shaped trace. The inductor trace is formed on the primary-side layer board and coupled to the primary-side trace, and two ends of the inductor trace form an input terminal and an output terminal of the planar magnetic component.

Abstract: A structure and a method of forming are provided. The structure includes a first dielectric layer overlying a first substrate. A first connection pad is disposed in a top surface of the first dielectric layer and contacts a first redistribution line. A first dummy pad is disposed in the top surface of the first dielectric layer, the first dummy pad contacting the first redistribution line. A second dielectric layer overlies a second substrate. A second connection pad and a second dummy pad are disposed in the top surface of the second dielectric layer, the second connection pad bonded to the first connection pad, and the first dummy pad positioned in a manner that is offset from the second dummy pad so that the first dummy pad and the second dummy pad do not contact each other.

Abstract: A method of forming a ferroelectric random access memory (FeRAM) device includes: forming a layer stack over a substrate, where the layer stack includes alternating layers of a first dielectric material and a word line (WL) material; forming first trenches extending vertically through the layer stack; filling the first trenches, where filling the first trenches includes forming, in the first trenches, a ferroelectric material, a channel material over the ferroelectric material, and a second dielectric material over the channel material; after filling the first trenches, forming second trenches extending vertically through the layer stack, the second trenches being interleaved with the first trenches; and filling the second trenches, where filling the second trenches includes forming, in the second trenches, the ferroelectric material, the channel material over the ferroelectric material, and the second dielectric material over the channel material.

Abstract: A vacuum switching valve and a suction system having the same. The vacuum switching valve comprises: a valve body, comprising a first end and a second end, the second end being provided with an air inlet, an air outlet and a through hole; a valve element movably arranged in the valve body; a cylinder, the cylinder being connected to the first end and the valve element, the cylinder drives the valve element to move in the valve body, to close or open the air inlet; a stopper passing through the through hole, the stopper comprising a third end and a fourth end, the third end being connected to the valve element, the fourth end being located on the side of the through hole away from the valve element.

Abstract: A method includes forming a first conductive feature over a semiconductor substrate, forming an ILD layer over the first conductive feature, patterning the ILD layer to form a trench, and forming a conductive layer over the patterned ILD layer to fill the trench. The method further includes polishing the conductive layer to form a via contact configured to interconnect the first conductive feature with a second conductive feature, where polishing the conductive layer exposes a top surface of the ILD layer, polishing the exposed top surface of the ILD layer, such that a top portion of the via contact protrudes from the exposed top surface of the ILD layer, and forming the second conductive feature over the via contact, such that the top portion of the via contact extends into the second conductive feature.

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: An examination system is provided. The examination system includes an optical detector and analyzer. The optical detector emits a detection light source toward a target object and detects a respondent light which is induced from the target object in response to the detection light source to generate image data. The image data indicates a detection image. The analyzer receives the image data and determines which region of the target object the detection image belongs to according to the image data. When the analyzer determines that the detection image belongs to a specific region of the target object, the analyzer extracts at least one feature of the image data to serve as a basis for classification of the specific region.

Abstract: Some embodiments relate to an integrated chip including a substrate having a first side and a second side opposite the first side. The integrated chip further includes a first photodetector positioned in a first pixel region within the substrate. A floating diffusion region with a first doping concentration of a first polarity is positioned on the first side of the substrate in the first pixel region. A first body contact region with a second doping concentration of a second polarity different from the first polarity is positioned on the second side of the substrate in the first pixel region.

Abstract: The present invention provides radioactive glass microspheres for embolization and a preparation method and an application thereof. A nuclide oxide and a foaming agent are added into a glass matrix, blended and uniformly mixed for making the foaming agent decomposed and vaporized at a high temperature to generate bubbles, so as to prepare the radioactive glass microspheres for embolization with cavities. The radioactive glass microspheres for embolization have a density of 1.4-2.3 g/cm3, a nuclide loading rate of 15-40 wt % and a higher and more stable radiation dose, can achieve better distribution and deposition effects in liver blood vessels after injection, and can achieve a better therapeutic effect for hepatocellular carcinoma (HCC).

Abstract: A method of selecting a treatment recommendation for nitrogen loss in a field includes measuring a first characteristic of a soil sample that is related to biologic nitrogen loss to produce a measured value. A second characteristic of the soil sample is measured and is used to select a sample group for the soil sample. The measured value is scaled based on the soil sample group the soil sample is placed into to form a scaled measure and the scaled measure is used to select a treatment recommendation.

Abstract: A method of indicating a characteristic of a soil sample of a field includes measuring a co-factor in the soil sample and using the co-factor to place the soil sample in a soil sample group. The characteristic of the soil sample is measured and then is scaled based on the soil sample group. The scaled measure is displayed to better represent the characteristic of the soil sample relative to soil samples of the sample group.

Abstract: A communication receiver includes a first signal processing circuit and a second signal processing circuit. The first signal processing circuit includes a first feedforward equalizer and a decision circuit. The first feedforward equalizer processes a received signal to generate a first equalized signal. The decision circuit performs hard decision upon the first equalized signal to generate a first symbol decision signal. The second signal processing circuit includes a second feedforward equalizer, a decision feedforward equalizer, and a first decision feedback equalizer. The second feedforward equalizer processes the first equalized signal to generate a second equalized signal. The decision feedforward equalizer processes the first symbol decision signal to generate a third equalized signal. The first decision feedback equalizer generates a second symbol decision signal according to the second equalized signal and the third equalized signal.

Abstract: A method of making a ROM structure includes the operations of forming an active area having a channel, a source region, and a drain region; depositing a gate electrode over the channel; depositing a conductive line over at least one of the source region and the drain region; adding dopants to the source region and the drain region of the active area; forming contacts to the gate electrode, the source region, and the drain; depositing a power rail, a bit line, and at least one word line of the integrated circuit against the contacts; and dividing the active area with a trench isolation structure to electrically isolate the gate electrode from the source region and the drain region.

Abstract: A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-function material using first process conditions to form the work-function material having a first proportion of different crystalline orientations and forming a second transistor, which includes forming a second gate dielectric layer over a second channel region in the substrate and forming a second work-function layer over the second gate dielectric layer, wherein forming the second work-function layer includes depositing the work-function material using second process conditions to form the work-function material having a second proportion of different crystalline orientations.

Abstract: A method of reducing gray energy consumption and achieving optimal gray energy saving for carbon neutralization is proposed. In a cellular network, each cell or BS (group of cells) has renewable (green) and non-renewable (gray, on-grid power) energy sources. The renewable (green) energy is highly variable and unpredictable, while non-renewable (gray, on-grid power) is stable but is not renewable and thus has more carbon impact. Each cell or BS (group of cells) services is associated UEs when it is on. In one novel aspect, a cell or BS (group of cells) that consumes more non-renewable energy can give some or all of its served UEs to another cell or BS (group of cells) that consumes less non-renewable energy.

Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.

Abstract: An electronic-cigarette rod includes a housing having an insertion opening and a support in the housing. The support includes a receiving cavity for receiving a sensor, an air inlet channel in communication with the receiving cavity, an airflow channel defined by an outer peripheral wall of the support and in air communication with an exterior of the support, and a first opening. The support further includes an end surface facing the insertion opening, the air inlet channel is located on a side of the receiving cavity close to the end surface. A first end of the first opening is in communication with the airflow channel, a second end of the first opening is in communication with the air inlet channel, and the air inlet channel is in air communication with the exterior of the support through the first opening and the airflow channel in that sequence.