Abstract: A method for fabricating a low temperature polysilicon thin film transistor incorporating a channel passivation step is described. The method achieves dopant ion activation in a polysilicon gate by using laser irradiation, however, with an additional insulating material layer such as SiOx or SixNy overlying and protecting the channel portion of the polysilicon gate. Any possible contamination by residual photoresist material after a photoresist removal step on the channel portion of the polysilicon gate can thus be avoided. Furthermore, deficiencies such as dopant ions out-diffusion and lateral diffusion can be avoided. The leakage current of the thin film transistors formed by the present invention method is significantly reduced when compared to those formed by a conventional method.

Abstract: A method for fabricating a low temperature polysilicon thin film transistor incorporating a channel passivation step is described. The method achieves dopant ion activation in a polysilicon gate by using laser irradiation, however, with an additional insulating material layer such as SiOx or SixNy overlying and protecting the channel portion of the polysilicon gate. Any possible contamination by residual photoresist material after a photoresist removal step on the channel portion of the polysilicon gate can thus be avoided. Furthermore, deficiencies such as dopant ions out-diffusion and lateral diffusion can be avoided. The leakage current of the thin film transistors formed by the present invention method is significantly reduced when compared to those formed by a conventional method.

Abstract: The invention provides shuttle vectors, and methods of using shuttle vectors, capable of expression in, at least, a mammalian cell. Furthermore, the shuttle vectors are capable of replication in at least yeast, and optionally, bacterial cells. Also provided is a method wherein yeast are transformed with a shuttle vector as provided herein. Heterologous nucleic acids flanked by 5′ and 3′ ends identical to a homologous recombination site within the shuttle vector are introduced to the transformed yeast and allowed to homologously recombine with the shuttle vector such that they are inserted into the vector by the yeast organism. The shuttle vector is then recovered and transferred to a mammalian cell for expression.

Abstract: An used PCB milling cutter reclamation method includes the step of processing the cutting tip and a part of the handle of the damaged PCB milling cutter to form a new cutting tip, the step of processing the end of the handle remote from the new cutting tip to form a round rod, and the step of fastening an end cap to the round rod, keeping the end cap in line as well as in flush with the periphery of the handle.

Abstract: A central monitoring and control station for a garbage truck has a panel, multiple switches, multiple monitoring units and multiple sensors. The multiple switches are mounted on the panel, and each is connected to one of the cylinders on the garbage truck. The monitoring units are mounted on the panel, and each monitoring unit electrically connects to at least one sensor. Each sensor is mounted on the garbage truck and corresponds to one of the cylinders on the garbage truck. With such a central monitoring and control station, the position of the piston rod of each cylinder on the garbage truck is detected and shown. The user can find a damaged device immediately. To repair the damaged device on the garbage truck becomes more efficient.

Abstract: An ESD protection circuit for Mixed-Voltage I/O by using stacked NMOS transistors with substrate triggering technique is disclosed. The ESD protection circuit contains a set of stacked NMOS transistors with a first NMOS transistor and a second NMOS transistor, a parasitic lateral bipolar transistor, a substrate current generating circuit, and a parasitic substrate resistor. The drain of the first NMOS transistor connects to an I/O pad. The gate of the first NMOS transistor connects to a first working voltage. The source of the first NMOS transistor connects to the drain of the second NMOS transistor. The gate of the second NMOS transistor connects to an internal circuit. The source of the second NMOS transistor connects to a second working voltage. The collector of the parasitic lateral bipolar transistor connects to the drain of the first NMOS transistor and its emitter connects to the source of the second NMOS transistor.

Abstract: A method of driving-in antimony into a wafer, including the following steps. A wafer is loaded into an annealing furnace/tool. The wafer having an area of implanted antimony ions. The wafer is annealed a first time at a first temperature in the presence of only a first nitrogen gas flow rate. The wafer is ramped-down from the first temperature to a second temperature in the presence of only an oxygen gas flow rate. The wafer is maintained in the presence of the of oxygen gas flow rate at the second temperature. The wafer is ramped-up from the second temperature to a third temperature in the presence of only the oxygen gas flow rate. The wafer is annealed a second time at the third temperature in the presence of only a second nitrogen gas flow rate to drive-in the antimony ions within the area of implanted antimony.

Abstract: A Method for manufacturing semiconductor devices having ESD protection. The method includes the steps of providing a semiconductor substrate having a well region, forming a gate structure on the semiconductor substrate, the gate structure including an oxide layer, a gate electrode on said oxide layer, and two spacer sidewalls, forming a source region within the well region at one side of the gate structure, forming a drain region within the well region at the other side of the gate structure, forming lightly doped source/drain regions in the well region and beneath the spacer walls of the gate structure wherein the lightly doped source/drain regions have the same conductivity type as the drain region and, and performing an implant with the same conductivity type as the well region as to form an ESD implantation region.

Abstract: The invention provides shuttle vectors, and methods of using shuttle vectors, capable of expression in, at least, a mammalian cell. Furthermore, the shuttle vectors are capable of replication in at least yeast, and optionally, bacterial cells. Also provided is a method wherein yeast are transformed with a shuttle vector as provided herein. Heterologous nucleic acids flanked by 5′ and 3′ ends identical to a homologous recombination site within the shuttle vector are introduced to the transformed yeast and allowed to homologously recombine with the shuttle vector such that they are inserted into the vector by the yeast organism. The shuttle vector is then recovered and transferred to a mammalian cell for expression.

Abstract: The present invention discloses a cooling device using thermal-conductive liquid. The present invention includes a base, a means for generating magnetic field and a plurality of thermal-conductive fins. Among these, the base includes a circuit pipe accommodating a magnetized thermal-conductive liquid. The means for generating magnetic field is positioned in the base and used to generate a magnetic field. The thermal-conductive fins are formed on the base and the surround the circuit pipe. The magnetic field generated by the means for generating magnetic field makes the magnetized thermal-conductive liquid flows so as to dissipate heat.

Abstract: The invention provides shuttle vectors, and methods of using shuttle vectors, capable of expression in, at least, a mammalian cell. Furthermore, the shuttle vectors are capable of replication in at least yeast, and optionally, bacterial cells. Also provided is a method wherein yeast are transformed with a shuttle vector as provided herein. Heterologous nucleic acids flanked by 5′ and 3′ ends identical to a homologous recombination site within the shuttle vector are introduced to the transformed yeast and allowed to homologously recombine with the shuttle vector such that they are inserted into the vector by the yeast organism. The shuttle vector is then recovered and transferred to a mammalian cell for expression.

Abstract: A “virtual string” is generated for synthesizing sound produced by plucked-string instruments using recurrent neural networks. The disclosed recurrent neural network, called a Scattering Recurrent Network (SRN), is based on the physics of waves traveling in the string. Vibration measured from a plucked string is used as the training data for the SRN. The trained SRN is a virtual model capable of generating tones similar to the tones generated by the physical string. As with a real string, the “virtual string” corresponding to the SRN responds differently to different types of string “plucking” motions.

Abstract: The invention provides shuttle vectors, and methods of using shuttle vectors, capable of expression in, at least, a mammalian cell. Furthermore, the shuttle vectors are capable of replication in at least yeast, and optionally, bacterial cells. Also provided is a method wherein yeast are transformed with a shuttle vector as provided herein. Heterologous nucleic acids flanked by 5′ and 3′ ends identical to a homologous recombination site within the shuttle vector are introduced to the transformed yeast and allowed to homologously recombine with the shuttle vector such that they are inserted into the vector by the yeast organism. The shuttle vector is then recovered and transferred to a mammalian cell for expression.

Abstract: A method of fabricating bonding pad structure for improving bonding pad surface quality. A substrate has a bonding pad thereon. A passivation is formed on the bonding pad to expose the bonding pad. A sacrificial layer is formed on the passivation and an opening is formed within the sacrificial layer to expose the bonding pad. A Cu/Al alloy is formed on the passivation to at least cover the bonding pad. The sacrificial layer and the Cu/Al alloy thereon are removed, such that the Cu/Al alloy remains on the bonding pad.

Abstract: A method of forming a CVD nitride (e.g., titanium nitride) film on a substrate. The as-deposited nitride film is treated by a plasma of a high power density (preferably between approximately 200 W and 300 W) for a prolonged duration of time (preferably between approximately 32 s and 52 s) to reduce the tendency of the resistance and thickness of the as-deposited film to change because of either time of exposure to atmosphere or subsequent processing steps.

Abstract: The present invention is a chemical vapor deposition of tungsten(W-CVD)process for growing low stress and void free interconnect. The method of this invention utilizes two steps W-CVD process by two chambers. The first step, filling tungsten metal completely in the contact hole, is performed in the first chamber. The second step, forming a tungsten layer for interconnect, is performed in the second chamber. Because of using two different chambers, the method of this invention can adjust the temperature of the process and the gas flow of the WF.sub.6 vapor of the process for different required the two steps. The second step of chemical vapor deposition of tungsten by adjusting the temperature and the gas flow has reduced greatly the stress of the second conductive layer. Moreover, the first step of chemical vapor deposition of tungsten by adjusting the temperature and the gas flow prevents voids in the contact hole or in the via hole.

Abstract: A method of reducing tungsten plug loss in processes for fabrication for silicon-based semiconductor devices that include a tungsten plug in a high aspect ratio contact hole. The invention provides a barrier layer prepared by first forming a conformal layer of titanium nitride by chemical vapor deposition. Afterward, another film of titanium nitride is supplied by plasma vapor deposition. The barrier layer comprises at least these two films, and tungsten is then deposited to at least fill the high aspect ratio film-coated contact hole. Upon removal of excess tungsten as by wet etch back, the tungsten plug remains essentially intact, and any plug loss is insignificant in comparison with the prior art.

Abstract: The present invention provides a method for stabilizing the crystal structure of a silicon substrate after an ion implantation process including the step of exposing the substrate to a temperature not higher than 200.degree. C. for a time period of not less than 10 seconds, and preferably to a temperature between about 100.degree. C. and about 200.degree. C. for a time period of between about 10 seconds and about 10,000 seconds.

Abstract: A music accompaniment machine processes a music accompaniment file to alter a stored beat of the music accompaniment file to match a beat established by a user. The machine identifies the beat of the user using a voice analyzer. The voice analyzer isolates the user's singing signal from excess background noise and appends segment position information to the singing signal, which is indicative of the beat established by the singer. A MIDI controller alters the musical beat of the music accompaniment file so that it matches the beat established by the user.

Abstract: A packing box made from a patterned cardboard having a bottom panel, a top panel, two side panels, a front panel, and a rear panel, wherein a rectangular bottom frame is extended from one long side of the bottom panel remote from the front panel, having two adhesion flaps respectively extended from one long side and one short side thereof and adhered to the bottom panel at an outer side, defining with the bottom panel a bottom window and an insertion hole at one side for the insertion of a card into the bottom window; a rectangular top frame is extended from one long side of one side panel remote from the bottom panel, having two adhesion flaps respectively extended from one long side and one short side thereof and adhered to the top panel at an outer side, defining with the top panel a top window and an insertion hole at one side for the insertion of a card into the top window.