Patents by Inventor Abdul Aziz
Abdul Aziz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230386883Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for reducing substrate backside damage during semiconductor device processing. In one implementation, a method of chucking a substrate in a substrate process chamber includes exposing the substrate to a plasma preheat treatment prior to applying a chucking voltage to a substrate support. In one implementation, a substrate support is provided and includes a body having an electrode and thermal control device disposed therein. A plurality of substrate supporting features are formed on an upper surface of the body, each of the substrate supporting features having a substrate supporting surface and a rounded edge.Type: ApplicationFiled: August 14, 2023Publication date: November 30, 2023Inventors: Liangfa HU, Abdul Aziz KHAJA, Sarah Michelle BOBEK, Prashant Kumar KULSHRESHTHA, Yoichi SUZUKI
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Patent number: 11825892Abstract: A chemical resistant composite glove that includes a first polymeric layer in the shape of a glove; and a second polymeric layer disposed on the first polymeric layer, and wherein the first polymeric layer is specified for one class of chemical resistance and the second polymeric layer is specified for a second class of chemical resistance, and optionally a third polymeric layer, which may be a thin coating, disposed on at least one of first polymeric layer or the second polymeric layer and is optionally specified for a third class of chemical resistance.Type: GrantFiled: December 11, 2018Date of Patent: November 28, 2023Assignee: Ansell LimitedInventors: Putri Faridatul Akmar Binti Megat Abdul Aziz, Mei Yee Chin, Norazilayati Binti Rastam, Mohd Fairuz Bin Mohamad Zawawi, Hamidon Zain Bin Mohammed, Noorman Abu Hassan, Wan Ashruzi Bin Wan Ahmad
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Patent number: 11830791Abstract: A semiconductor package includes a die pad and leads extending from the die pad. Each lead has a free end with outer surfaces extending at angles from one another. An electrically conductive plating material covers at least portions of the outer surfaces. A die attached to the die pad is electrically connected to the leads. An insulating layer extends over the leads and the die such that the free ends of the leads are exposed.Type: GrantFiled: July 17, 2019Date of Patent: November 28, 2023Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: You Chye How, Anis Fauzi Bin Abdul Aziz
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Publication number: 20230349499Abstract: There is provided a structure which can be suitable for use with a pipeline. The pipeline can include a plurality of pipe sections. The structure can be shaped and dimensioned to couple at least two pipe sections. The structure can include a housing which can be shaped and dimensioned to carry at least one device. The device(s) can be capable of receiving at least one detection signal associated with the pipeline. The detection signal(s) can be communicated within at least a portion of the pipeline. Moreover, the detection signal(s) can be received by an analyzer for analysis to determine at least one defect associable with the pipeline.Type: ApplicationFiled: June 17, 2021Publication date: November 2, 2023Inventors: Ahmad Kamil MAHMOOD, Lukman AB RAHIM, Izzatdin ABDUL AZIZ, Jafreezal JAAFAR, Mohd Fadzil HASSAN, Mohd Hilmi HASAN, M Nazmi M ALI, M Hisham ABU BAKAR, Ahmad Sirwan M TUSELIM, Muzdalifah ZAKARIA
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Patent number: 11795555Abstract: A method of making NiO nanoparticles is described, as well as a method of using NiO nanoparticles as an electrocatalyst component to a porous carbon electrode. The carbon electrode may be made of carbonized filter paper. Together, this carbon-supported NiO electrode may be used for water electrolysis. Using a pamoic acid salt in the NiO nanoparticle synthesis leads to smaller and monodisperse nanoparticles, which support higher current densities.Type: GrantFiled: February 23, 2018Date of Patent: October 24, 2023Assignee: King Fahd University of Petroleum and MineralsInventors: Md. Abdul Aziz, Mohammed Ameeh Ahmed Qasem
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Patent number: 11791170Abstract: A method of making semiconductor packages includes providing a first lead frame having a first plurality of semiconductor dies arranged along a first longitudinal axis, each of the first plurality of semiconductor dies having a first number of metal contacts; providing a second lead frame having a second plurality of semiconductor dies arranged along a second longitudinal axis, each of the second plurality of semiconductor dies having a second number of metal contacts, the second number of metal contacts different than the first number of metal contacts; and covering the first plurality of semiconductor dies in a first mold using a common semiconductor die cavity; covering the second plurality of semiconductor dies in a second mold using the common semiconductor die cavity.Type: GrantFiled: April 22, 2021Date of Patent: October 17, 2023Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Anis Fauzi Bin Abdul Aziz, Chong Han Lim, Lee Han Meng@Eugene Lee, Wei Fen Sueann Lim
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Publication number: 20230317411Abstract: A radio frequency (RF) source may be used to generate a capacitively coupled plasma to perform a plasma-based process on a substrate in a plasma processing chamber. A controller may cause the RF source and a switching element to route an RF signal to electrodes in the pedestal that generate the plasma in the processing chamber as part of a recipe performed on a substrate during etch or deposition processes. Between processes, the controller may cause the same RF source to generate a second RF signal that is instead routed by the switching element to inductive coils to generate an inductively coupled plasma for a cleaning process to remove film deposits on the interior of the plasma processing chamber.Type: ApplicationFiled: March 13, 2022Publication date: October 5, 2023Applicant: Applied Materials, Inc.Inventors: Abdul Aziz Khaja, Juan Carlos Rocha-Alvarez
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Publication number: 20230311094Abstract: The invention provides methods for preparing activated carbon and biochar from a composition that comprises agricultural waste and that optionally comprises plastic. The invention also provides activated carbon and biochar having unique properties.Type: ApplicationFiled: February 15, 2023Publication date: October 5, 2023Inventors: Kandis Leslie Abdul-Aziz, Mark Gale, Marissa Moreno
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Publication number: 20230307228Abstract: Exemplary semiconductor processing chambers may include a gas delivery assembly. The chambers may include a substrate support. The chambers may include a faceplate positioned between the gas delivery assembly and the substrate support. The faceplate may be characterized by a first surface and a second surface. The second surface of the faceplate and the substrate support may at least partially define a processing region. The faceplate may define a first plurality of apertures and a second plurality of apertures. Each of the first plurality of apertures may include a first generally conical aperture profile that extends through the second surface that extends through the second surface. Each of the second plurality of apertures may include a second generally conical aperture profile that extends through the second surface. The second generally conical aperture profile may be different than the first generally conical aperture profile.Type: ApplicationFiled: March 24, 2022Publication date: September 28, 2023Applicant: Applied Materials, Inc.Inventors: Abdul Aziz Khaja, Juan Carlos Rocha-Alvarez
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Publication number: 20230298870Abstract: Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.Type: ApplicationFiled: May 26, 2023Publication date: September 21, 2023Applicant: Applied Materials, Inc.Inventors: Fei Wu, Abdul Aziz Khaja, Sungwon Ha, Ganesh Balasubramanian, Vinay Prabhakar
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Publication number: 20230298922Abstract: Aspects of the present disclosure relate to one or more implementations of a substrate support for a processing chamber. In one implementation, a substrate support includes a body having a center, and a support surface on the body configured to at least partially support a substrate. The substrate support includes a first angled wall that extends upward and radially outward from the support surface, and a first upper surface disposed above the support surface. The substrate support also includes a second angled wall that extends upward and radially outward from the first upper surface, the first upper surface extending between the first angled wall and the second angled wall. The substrate support also includes a second upper surface extending from the second angled wall. The second upper surface is disposed above the first upper surface.Type: ApplicationFiled: May 23, 2023Publication date: September 21, 2023Applicant: Applied Materials, Inc.Inventors: Abdul Aziz KHAJA, Venkata Sharat Chandra PARIMI, Sarah Michelle BOBEK, Prashant Kumar KULSHRESHTHA, Vinay K. PRABHAKAR
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Publication number: 20230295817Abstract: A synthetic methodology for robust, nanostructured films of cobalt oxide over metal evaporated gold or similar material layer of, e.g., 50 nm, directly onto glass or other substrates via aerosol assisted chemical vapor deposition (AACVD). This approach allows film growth rates in the range of, e.g., 0.8 nm/s, using a commercially available precursor, which is ~10-fold the rate of electrochemical synthetic routes. Thus, 250 nm thick cobalt oxide films may be generated in only 5 minutes of deposition time. The water oxidation reaction for such films may start at ~0.6 V vs Ag/AgCl with current density of 10 mA/cm2 and is achieved at ~0.75 V corresponding to an overpotential of 484 mV. This current density is further increased to 60 mA/cm2 at ~1.5 V (vs Ag/AgCl). Electrochemically active surface area (ECSA) calculations indicate that the synergy between a Au-film, acting as electron sink, and the cobalt oxide film(s), acting as catalytic layer(s), are more pronounced than the surface area effects.Type: ApplicationFiled: April 13, 2023Publication date: September 21, 2023Inventors: Muhammad Ali EHSAN, Md. Abdul AZIZ, Abbas Saeed HAKEEM
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Patent number: 11756819Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for reducing substrate backside damage during semiconductor device processing. In one implementation, a method of chucking a substrate in a substrate process chamber includes exposing the substrate to a plasma preheat treatment prior to applying a chucking voltage to a substrate support. In one implementation, a substrate support is provided and includes a body having an electrode and thermal control device disposed therein. A plurality of substrate supporting features are formed on an upper surface of the body, each of the substrate supporting features having a substrate supporting surface and a rounded edge.Type: GrantFiled: April 22, 2020Date of Patent: September 12, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Liangfa Hu, Abdul Aziz Khaja, Sarah Michelle Bobek, Prashant Kumar Kulshreshtha, Yoichi Suzuki
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Publication number: 20230272525Abstract: The present disclosure relates to a method for in situ seasoning of process chamber components, such as electrodes. The method includes depositing a silicon oxide film over the process chamber component and converting the silicon oxide film to a silicon-carbon-containing film. The silicon-carbon-containing film forms a protective film over the process chamber components and is resistant to plasma processing and/or dry etch cleaning. The coatings has high density, good emissivity control, and reduces risk of device property drift.Type: ApplicationFiled: May 5, 2023Publication date: August 31, 2023Inventors: Sarah Michelle BOBEK, Abdul Aziz KHAJA, Ratsamee LIMDULPAIBOON, Kwangduk Douglas LEE
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Patent number: 11742263Abstract: A leadframe for electronic systems comprising a first sub-leadframe connected by links to a second sub-leadframe, the first and second sub-leadframe connected by tiebars to a frame; and each link having a neck suitable for bending the link, the necks arrayed in a line operable as the axis for bending the second sub-leadframe towards the first sub-leadframe with the necks operable as rotation pivots.Type: GrantFiled: November 19, 2020Date of Patent: August 29, 2023Assignee: Texas Instruments IncorporatedInventors: Lee Han Meng@ Eugene Lee, Anis Fauzi Bin Abdul Aziz, Wei Fen Sueann Lim
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Patent number: 11742185Abstract: Exemplary semiconductor processing systems may include an output manifold that defines at least one plasma outlet. The systems may include a gasbox disposed beneath the output manifold. The gasbox may include an inlet side facing the output manifold and an outlet side opposite the inlet side. The gasbox may include an inner wall that defines a central fluid lumen. The inner wall may taper outward from the inlet side to the outlet side. The systems may include an annular spacer disposed below the gasbox. An inner diameter of the annular spacer may be greater than a largest inner diameter of the central fluid lumen. The systems may include a faceplate disposed beneath the annular spacer. The faceplate may define a plurality of apertures extending through a thickness of the faceplate.Type: GrantFiled: March 26, 2021Date of Patent: August 29, 2023Assignee: Applied Materials, Inc.Inventors: Saket Rathi, Tuan A. Nguyen, Amit Bansal, Yuxing Zhang, Badri N. Ramamurthi, Nitin Pathak, Abdul Aziz Khaja, Sarah Michelle Bobek
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Patent number: 11712680Abstract: A supported catalyst having rhodium particles with an average diameter of less than 1 nm disposed on a support material containing magnetic iron oxide (e.g. Fe3O4). A method of producing the supported catalyst and a process of reducing nitroarenes to corresponding aromatic amines employing the supported catalyst with a high product yield are also described. The supported catalyst may be recovered with ease using an external magnet and reused.Type: GrantFiled: August 16, 2022Date of Patent: August 1, 2023Assignee: KING FAHD UNIVERSITY OF PETROLEUM AND MINERALSInventors: M. Nasiruzzaman Shaikh, Md. Abdul Aziz
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Patent number: 11702756Abstract: A synthetic methodology for robust, nanostructured films of cobalt oxide over metal evaporated gold or similar material layer of, e.g., 50 nm, directly onto glass or other substrates via aerosol assisted chemical vapor deposition (AACVD). This approach allows film growth rates in the range of, e.g., 0.8 nm/s, using a commercially available precursor, which is ˜10-fold the rate of electrochemical synthetic routes. Thus, 250 nm thick cobalt oxide films may be generated in only 5 minutes of deposition time. The water oxidation reaction for such films may start at ˜0.6 V vs Ag/AgCl with current density of 10 mA/cm2 and is achieved at ˜0.75 V corresponding to an overpotential of 484 mV. This current density is further increased to 60 mA/cm2 at ˜1.5 V (vs Ag/AgCl). Electrochemically active surface area (ECSA) calculations indicate that the synergy between a Au-film, acting as electron sink, and the cobalt oxide film(s), acting as catalytic layer(s), are more pronounced than the surface area effects.Type: GrantFiled: February 26, 2019Date of Patent: July 18, 2023Assignee: King Fahd University of Petroleum and MineralsInventors: Muhammad Ali Ehsan, Md. Abdul Aziz, Abbas Saeed Hakeem
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Publication number: 20230221267Abstract: A system and methods for petro-steering methodologies are provided. An exemplary method obtains rock fabric data, and integrate rock fabric data with dynamic productivity data to identify patterns between the rock fabric data and dynamic productivity data. Gas rates and steering values are predicted across UBCT wells based on the patterns.Type: ApplicationFiled: January 12, 2022Publication date: July 13, 2023Inventors: Ferney Geovany Moreno Sierra, Ahmad Azly Bin Abdul Aziz, Neil W. Craigie, Faisal S. Al Reshedan, Nawaf Aldossary
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Patent number: 11699577Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.Type: GrantFiled: May 25, 2021Date of Patent: July 11, 2023Assignee: Applied Materials, Inc.Inventors: Sarah Michelle Bobek, Ruiyun Huang, Abdul Aziz Khaja, Amit Bansal, Dong Hyung Lee, Ganesh Balasubramanian, Tuan Anh Nguyen, Sungwon Ha, Anjana M. Patel, Ratsamee Limdulpaiboon, Karthik Janakiraman, Kwangduk Douglas Lee