Abstract: A supported catalyst having rhodium particles with an average diameter of less than 1 nm disposed on a support material containing magnetic iron oxide (e.g. Fe3O4). A method of producing the supported catalyst and a process of reducing nitroarenes to corresponding aromatic amines employing the supported catalyst with a high product yield are also described. The supported catalyst may be recovered with ease using an external magnet and reused.

Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.

Abstract: An electronic device includes a package structure, a first lead and a second lead. The first lead has a first portion extending outward from a side of the package structure and downward, and a second portion extending outward from the first portion away from the package side. The second lead has a first portion extending outward from the package side and downward, and a second portion extending inward from the first portion toward the package side, and a distal end of the second lead is spaced from the package side.

Abstract: Exemplary processing methods may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The methods may include adjusting a variable capacitor within 20% of a resonance peak. The variable capacitor may be coupled with an electrode incorporated within a substrate support on which a substrate is seated. The methods may include depositing a material on the substrate.

Abstract: Exemplary semiconductor processing systems may include an output manifold that defines at least one plasma outlet. The systems may include a gasbox disposed beneath the output manifold. The gasbox may include an inlet side facing the output manifold and an outlet side opposite the inlet side. The gasbox may include an inner wall that defines a central fluid lumen. The inner wall may taper outward from the inlet side to the outlet side. The systems may include an annular spacer disposed below the gasbox. An inner diameter of the annular spacer may be greater than a largest inner diameter of the central fluid lumen. The systems may include a faceplate disposed beneath the annular spacer. The faceplate may define a plurality of apertures extending through a thickness of the faceplate.

Abstract: A supported catalyst having rhodium particles with an average diameter of less than 1 nm disposed on a support material containing magnetic iron oxide (e.g. Fe3O4). A method of producing the supported catalyst and a process of reducing nitroarenes to corresponding aromatic amines employing the supported catalyst with a high product yield are also described. The supported catalyst may be recovered with ease using an external magnet and reused.

Abstract: A pump control system for a wet test meter (WTM) is disclosed. The pump control system includes a WTM that contains packing fluid, a control module that has a DC power supply and is configured to detect a level of the packing fluid in the WTM, a pump that is configured to be controlled by the control module and is activated when the packing fluid in the WTM falls below a predetermined level, and a level sensor/detector that is located outside of the WTM, wired to the control module, and configured to monitor the packing fluid level within the WTM. When the packing fluid falls below the predetermined level as detected by the control module, the WTM is automatically filled by pumping packing fluid from a storage tank using the pump, until the packing fluid level reaches above the predetermined level.

Abstract: The present disclosure provides compositions and methods for treating subjects at risk for or with sensorineural hearing loss by modulating the rate of Atoh1 protein degradation to increase levels of Atoh1 protein.

Abstract: The present invention relates to a method and system for producing liquefied natural gas (LNG) from a stream of pressurized natural gas which involves a combination of mechanical refrigeration.

Abstract: The present disclosure provides compositions and methods for treating subjects at risk for or with sensorineural hearing loss. Such compositions and methods include modulating the epigenetic status of the cell, or rate of protein degradation, to increase expression and/or levels of Atoh1 protein.

Abstract: A method includes attaching semiconductor dies to die attach pads of first and second columns of the lead frame; enclosing the semiconductor dies of the respective columns in respective first and second package structures; trimming the lead frame to separate respective first and second lead portions of adjacent ones of the first and second columns of the lead frame; moving the first columns along a column direction relative to the second columns; and separating individual packaged electronic devices of the respective first and second columns from one another.

Abstract: A leadframe strip for use in making leaded integrated circuit packages includes a plurality of integrally connected leadframes that each have a die attach pad and first and second dam bars located adjacent to opposite first and second sides of the die attach pad, respectively. A plurality of continuous lead structures extend, uninterrupted by other structure, between opposing ones of the dam bars of horizontally adjacent leadframes. The plurality of integrally connected leadframes are arranged in a plurality of vertical columns, wherein die attach pads in one vertical column are vertically offset from die attach pads in adjacent vertical columns.

Abstract: Provided among other things is an elastomeric article providing a chemical barrier, the article having a layered structure comprising a sequential laminate of: (a) a latex-based elastomeric polymeric barrier layer; (b) a non-reactive tie adhesive resin layer comprising oxo (—(C?O)—) groups; and (c) a polyamide layer; wherein the layered structure has a first side nearest the latex-based elastomeric polymeric barrier layer and a second side; wherein the layered structure is effective to provide a chemical permeation time in excess of 100 minutes pursuant to EN 16523-1:2015 for benchmark solvents of acetone, ethyl acetate and methanol, when applied to the first side, and in excess of 100 minutes for acetone when applied to the second side; and wherein the elastomeric layer is primarily not polyolefin.

Abstract: A method of making Flat No-Lead Packages with plated lead surfaces exposed on lateral faces thereof. The method includes providing a plurality of Flat No-Lead Packages having severed, unplated lead surfaces exposed on lateral faces thereof and having plated lead surfaces exposed on bottom faces thereof. The method further includes batch electroplating the severed unplated lead surfaces of the plurality of Flat No-Lead Packages.

Abstract: Jute stick/stalk can be used to prepared and carboxylated to yield useful activated carbons, e.g., for removing Pb2+ from drinking water. Such activated carbons can act as an inexpensive adsorbents using agricultural waste or by-products. Carboxylation of jute stick activated carbon (JSAC) can improve its efficiency for Pb2+ removal, e.g., from aqueous solutions, even if its BET surface area is reduced. Carboxylated JSAC (JSAC-COO?) can have surface areas around 615.3±0.5, 1, 2.5, 5, 10, 15, 20, or 25 m2/g. JSAC-COO? can treat varied Pb2+ concentrations, 10, 25 mg/L, etc., pHs, e.g., 4.0, 7.0, etc., temperatures, e.g., 15° C., 27° C., etc., and contact periods, e.g., 1, 5, 10, 15, 30, 60 minutes, etc., achieving up to 99.8% Pb2+ removal within 15 minutes of contact JSAC-COO? adsorption capacity can be >25.0 mg Pb2+/g, as well as other metal ions, with potential for water and/or gas treatment.

Abstract: Exemplary semiconductor processing systems may include a chamber body comprising sidewalls and a base. The systems may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen and a stem. The systems may include a baffle extending about a stem of the substrate support. The baffle may define one or more apertures through the baffle. The systems may include a fluid source fluidly coupled with the chamber body at an access between the stem of the substrate support and the baffle.

Abstract: Exemplary processing methods may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The methods may include adjusting a variable capacitor within 20% of a resonance peak. The variable capacitor may be coupled with an electrode incorporated within a substrate support on which a substrate is seated. The methods may include depositing a material on the substrate.

Abstract: Exemplary semiconductor processing methods may include forming a seasoning film on a heater of a processing chamber by a first deposition process. The method may include performing a hardmask deposition process in the processing chamber. The method may include cleaning the processing chamber by a first cleaning process. The method may include monitoring a gas produced during the first cleaning process. The method may include cleaning the processing chamber using a second cleaning process different from the first cleaning process. The method may also include monitoring the gas produced during the second cleaning process.

Abstract: Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.

Abstract: A system for facilitating evaluation of characteristics related to quality associated with a machine design may include a user input device configured to generate a query related to one or more characteristics related to quality associated with a machine design. The system may also include a display device configured display images, and a processor in communication with the user input device and the display device. The processor may be configured to receive a query from the user input device, access data representative of the machine design, and generate image data representative of characteristics related to quality associated with the machine design. The image data may be communicated to the display device to display a machine image including a color-coded representation of at least a portion of a machine and a textual image including textual representations of information related to the machine design.