Patents by Inventor Abhishek Banerjee

Abhishek Banerjee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11962856
    Abstract: Systems and methods for, while a user is consuming a first media asset, generating for the user a recommendation of a second media asset based on a viewing history of the user. In some aspects, the systems and methods determine that a user is consuming only video of a first media asset, determine a first category for the first media asset, and retrieve a viewing history corresponding to the user. The viewing history comprises media assets consumed simultaneously with a media asset corresponding to the first category. The systems and methods select a second category corresponding to a highest number of media assets in the viewing history, select a second media asset based on the second category. Alternatively, the user can select the second media asset manually. The systems and methods generate for output the audio of the second media asset for simultaneous consumption with the video of the first media asset.
    Type: Grant
    Filed: May 1, 2023
    Date of Patent: April 16, 2024
    Assignee: Rovi Guides, Inc.
    Inventors: Anitha Rajagopal, Abhishek Banerjee, Vijayasekhar Mekala, Mitsu Deshpande
  • Patent number: 11942326
    Abstract: A process to form a HEMT can have a gate electrode layer that initially has a plurality of spaced-apart doped regions. In an embodiment, any of the spaced-apart doped regions can be formed by depositing or implanting p-type dopant atoms. After patterning, the gate electrode can include an n-type doped region over the p-type doped region. In another embodiment a barrier layer can underlie the gate electrode and include a lower film with a higher Al content and thinner than an upper film. In a further embodiment, a silicon nitride layer can be formed over the gate electrode layer and can help to provide Si atoms for the n-type doped region and increase a Mg:H ratio within the gate electrode. The HEMT can have good turn-on characteristics, low gate leakage when in the on-state, and better time-dependent breakdown as compared to a conventional HEMT.
    Type: Grant
    Filed: December 16, 2020
    Date of Patent: March 26, 2024
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Petr Kostelnik, Tomas Novak, Peter Coppens, Peter Moens, Abhishek Banerjee
  • Publication number: 20230276097
    Abstract: Systems and methods for, while a user is consuming a first media asset, generating for the user a recommendation of a second media asset based on a viewing history of the user. In some aspects, the systems and methods determine that a user is consuming only video of a first media asset, determine a first category for the first media asset, and retrieve a viewing history corresponding to the user. The viewing history comprises media assets consumed simultaneously with a media asset corresponding to the first category. The systems and methods select a second category corresponding to a highest number of media assets in the viewing history, select a second media asset based on the second category. Alternatively, the user can select the second media asset manually. The systems and methods generate for output the audio of the second media asset for simultaneous consumption with the video of the first media asset.
    Type: Application
    Filed: May 1, 2023
    Publication date: August 31, 2023
    Inventors: Anitha Rajagopal, Abhishek Banerjee, Vijayasekhar Mekala, Mitsu Deshpande
  • Patent number: 11689770
    Abstract: Systems and methods for, while a user is consuming a first media asset, generating for the user a recommendation of a second media asset based on a viewing history of the user. In some aspects, the systems and methods determine that a user is consuming only video of a first media asset, determine a first category for the first media asset, and retrieve a viewing history corresponding to the user. The viewing history comprises media assets consumed simultaneously with a media asset corresponding to the first category. The systems and methods select a second category corresponding to a highest number of media assets in the viewing history, select a second media asset based on the second category. Alternatively, the user can select the second media asset manually. The systems and methods generate for output the audio of the second media asset for simultaneous consumption with the video of the first media asset.
    Type: Grant
    Filed: October 12, 2022
    Date of Patent: June 27, 2023
    Assignee: Rovi Guides, Inc.
    Inventors: Anitha Rajagopal, Abhishek Banerjee, Vijayasekhar Mekala, Mitsu Deshpande
  • Publication number: 20230135769
    Abstract: Systems and methods of the present invention for gesture generation include: receiving a sequence of one or more word embeddings, one or more attributes, a gesture generation machine learning model; providing the sequence of one or more word embeddings and the one or more attributes to the gesture generation machine learning model; and providing the second emotive gesture of the virtual agent from the gesture generation machine learning model. The gesture generation machine learning model is configured to: produce, via an encoder, an output based on the one or more word embeddings; generate one or more encoded features based on the output and the one or more attributes; and produce, via a decoder, a emotive gesture based on the one or more encoded features and the preceding emotive gesture. Other aspects, embodiments, and features are also claimed and described.
    Type: Application
    Filed: October 31, 2022
    Publication date: May 4, 2023
    Inventors: Uttaran BHATTACHARYA, Aniket BERA, Dinesh MANOCHA, Abhishek BANERJEE, Pooja GUHAN, Nicholas REWKOWSKI
  • Patent number: 11588345
    Abstract: Example implementations relate to concurrent alternating-current and direct-current. In one example, a device comprises a power module connected to a first power outlet, the power module connected to a second power outlet, and a controller to the power module to concurrently provide alternating-current (AC) power to the first power outlet and direct-current (DC) power to the second power outlet by switching a transistor including switching circuitry in response to an absence of AC input power to the device.
    Type: Grant
    Filed: October 19, 2020
    Date of Patent: February 21, 2023
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Hai Ngoc Nguyen, Abhishek Banerjee
  • Publication number: 20230034909
    Abstract: Systems and methods for, while a user is consuming a first media asset, generating for the user a recommendation of a second media asset based on a viewing history of the user. In some aspects, the systems and methods determine that a user is consuming only video of a first media asset, determine a first category for the first media asset, and retrieve a viewing history corresponding to the user. The viewing history comprises media assets consumed simultaneously with a media asset corresponding to the first category. The systems and methods select a second category corresponding to a highest number of media assets in the viewing history, select a second media asset based on the second category. Alternatively, the user can select the second media asset manually. The systems and methods generate for output the audio of the second media asset for simultaneous consumption with the video of the first media asset.
    Type: Application
    Filed: October 12, 2022
    Publication date: February 2, 2023
    Inventors: Anitha Rajagopal, Abhishek Banerjee, Vijayasekhar Mekala, Mitsu Deshpande
  • Patent number: 11503371
    Abstract: Systems and methods for, while a user is consuming a first media asset, generating for the user a recommendation of a second media asset based on a viewing history of the user. In some aspects, the systems and methods determine that a user is consuming only video of a first media asset, determine a first category for the first media asset, and retrieve a viewing history corresponding to the user. The viewing history comprises media assets consumed simultaneously with a media asset corresponding to the first category. The systems and methods select a second category corresponding to a highest number of media assets in the viewing history, select a second media asset based on the second category. Alternatively, the user can select the second media asset manually. The systems and methods generate for output the audio of the second media asset for simultaneous consumption with the video of the first media asset.
    Type: Grant
    Filed: November 15, 2021
    Date of Patent: November 15, 2022
    Assignee: Rovi Guides, Inc.
    Inventors: Anitha Rajagopal, Abhishek Banerjee, Vijayasekhar Mekala, Mitsu Deshpande
  • Patent number: 11444190
    Abstract: An electronic device can include a HEMT. In an embodiment, a gate electrode, a drain electrode, and an access region including a first portion closer to the gate electrode and a second portion closer to the drain electrode. A lower dielectric film can overlie a portion of the access region, and an upper dielectric region can overlie another portion of the access region. In another embodiment, a dielectric film can have a relatively positive or negative charge and a varying thickness. In a further embodiment, the HEMT can include a gate electrode; a dielectric film overlying the gate electrode and defining openings to the gate electrode, wherein a portion of the dielectric film is disposed between the openings; and a gate interconnect extending into the openings of the dielectric film and contacting the gate electrode and the portion of the dielectric film.
    Type: Grant
    Filed: September 22, 2020
    Date of Patent: September 13, 2022
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Abhishek Banerjee, Peter Moens
  • Publication number: 20220216332
    Abstract: High Electron Mobility Transistors (HEMTs) are described with a circular gate, with a drain region disposed within the circular gates and circular source region disposed around the circular gates. The circular gate and the circular source region may form complete circles.
    Type: Application
    Filed: January 7, 2021
    Publication date: July 7, 2022
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Abhishek BANERJEE, Peter MOENS, Herbert DE VLEESCHOUWER, Peter COPPENS
  • Publication number: 20220189780
    Abstract: A process to form a HEMT can have a gate electrode layer that initially has a plurality of spaced-apart doped regions. In an embodiment, any of the spaced-apart doped regions can be formed by depositing or implanting p-type dopant atoms. After patterning, the gate electrode can include an n-type doped region over the p-type doped region. In another embodiment a barrier layer can underlie the gate electrode and include a lower film with a higher Al content and thinner than an upper film. In a further embodiment, a silicon nitride layer can be formed over the gate electrode layer and can help to provide Si atoms for the n-type doped region and increase a Mg:H ratio within the gate electrode. The HEMT can have good turn-on characteristics, low gate leakage when in the on-state, and better time-dependent breakdown as compared to a conventional HEMT.
    Type: Application
    Filed: December 16, 2020
    Publication date: June 16, 2022
    Applicant: Semiconductor Components Industries, LLC
    Inventors: Petr KOSTELNIK, Tomas NOVAK, Peter COPPENS, Peter MOENS, Abhishek BANERJEE
  • Patent number: 11342443
    Abstract: An electronic device including a transistor structure, and a process of forming the electronic device can include providing a workpiece including a substrate, a first layer, and a channel layer including a compound semiconductor material; and implanting a species into the workpiece such that the projected range extends at least into the channel and first layers, and the implant is performed into an area corresponding to at least a source region of the transistor structure. In an embodiment, the area corresponds to substantially all area occupied by the transistor structure. In another embodiment, the implant can form crystal defects within layers between the substrate and source, gate, and drain electrodes. The crystal defects may allow resistive coupling between the substrate and the channel structure within the transistor structure. The resistive coupling allows for better dynamic on-state resistance and potentially other electrical properties.
    Type: Grant
    Filed: March 27, 2020
    Date of Patent: May 24, 2022
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Peter Moens, Abhishek Banerjee
  • Patent number: 11335798
    Abstract: An Enhancement Mode (e-mode) Metal Insulator Semiconductor (MIS) High Electron Mobility Transistor (HEMT), or EMISHEMT, with GaN channel regrowth under a gate area, is described. The EMISHEMT with GaN channel regrowth under a gate area provides a normally-off device with a suitably high and stable threshold voltage, while providing a low gate leakage current. A channel layer provides a 2DEG and associated low on-resistance, while a channel-material layer extends through an etched recess and into the channel layer, and disrupts the 2DEG locally to enable the normally-off operation.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: May 17, 2022
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Peter Moens, Piet Vanmeerbeek, Abhishek Banerjee, Marnix Tack
  • Publication number: 20220078518
    Abstract: Systems and methods for, while a user is consuming a first media asset, generating for the user a recommendation of a second media asset based on a viewing history of the user. In some aspects, the systems and methods determine that a user is consuming only video of a first media asset, determine a first category for the first media asset, and retrieve a viewing history corresponding to the user. The viewing history comprises media assets consumed simultaneously with a media asset corresponding to the first category. The systems and methods select a second category corresponding to a highest number of media assets in the viewing history, select a second media asset based on the second category. Alternatively, the user can select the second media asset manually. The systems and methods generate for output the audio of the second media asset for simultaneous consumption with the video of the first media asset.
    Type: Application
    Filed: November 15, 2021
    Publication date: March 10, 2022
    Inventors: Anitha Rajagopal, Abhishek Banerjee, Vijayasekhar Mekala, Mitsu Deshpande
  • Patent number: 11206454
    Abstract: Systems and methods for, while a user is consuming a first media asset, generating for the user a recommendation of a second media asset based on a viewing history of the user. In some aspects, the systems and methods determine that a user is consuming only video of a first media asset, determine a first category for the first media asset, and retrieve a viewing history corresponding to the user. The viewing history comprises media assets consumed simultaneously with a media asset corresponding to the first category. The systems and methods select a second category corresponding to a highest number of media assets in the viewing history, select a second media asset based on the second category. Alternatively, the user can select the second media asset manually. The systems and methods generate for output the audio of the second media asset for simultaneous consumption with the video of the first media asset.
    Type: Grant
    Filed: December 11, 2019
    Date of Patent: December 21, 2021
    Assignee: Rovi Guides, Inc.
    Inventors: Anitha Rajagopal, Abhishek Banerjee, Vijayasekhar Mekala, Mitsu Deshpande
  • Patent number: 11147184
    Abstract: According to some examples, solutions are provided for power distribution of input alternating current (AC) power to at least one power outlet while the input AC power is available, charging of a set of batteries by the input AC power while the input AC power is available, and power distribution of direct current (DC) power from the set of batteries to the power outlet when the input AC power is not available. For such examples, the power outlet is capable of conducting AC power and DC power to a load that is coupled to the power outlet and that can receive either AC power or DC power.
    Type: Grant
    Filed: September 11, 2015
    Date of Patent: October 12, 2021
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Hai Ngoc Nguyen, Darrel G. Gaston, Abhishek Banerjee
  • Publication number: 20210210627
    Abstract: An Enhancement Mode (e-mode) Metal Insulator Semiconductor (MIS) High Electron Mobility Transistor (HEMT), or EMISHEMT, with GaN channel regrowth under a gate area, is described. The EMISHEMT with GaN channel regrowth under a gate area provides a normally-off device with a suitably high and stable threshold voltage, while providing a low gate leakage current. A channel layer provides a 2DEG and associated low on-resistance, while a channel-material layer extends through an etched recess and into the channel layer, and disrupts the 2DEG locally to enable the normally-off operation.
    Type: Application
    Filed: January 6, 2020
    Publication date: July 8, 2021
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Peter MOENS, Piet VANMEERBEEK, Abhishek BANERJEE, Marnix TACK
  • Patent number: 10964733
    Abstract: An opto-electronic High Electron Mobility Transistor (HEMT) may include a current channel including a two-dimensional electron gas (2DEG). The opto-electronic HEMT may further include a photoelectric bipolar transistor embedded within at least one of a source and a drain of the HEMT, the photoelectric bipolar transistor being in series with the current channel of the HEMT.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: March 30, 2021
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Peter Moens, Piet Vanmeerbeek, Abhishek Banerjee
  • Publication number: 20210066355
    Abstract: An opto-electronic High Electron Mobility Transistor (HEMT) may include a current channel including a two-dimensional electron gas (2DEG). The opto-electronic HEMT may further include a photoelectric bipolar transistor embedded within at least one of a source and a drain of the HEMT, the photoelectric bipolar transistor being in series with the current channel of the HEMT.
    Type: Application
    Filed: November 1, 2019
    Publication date: March 4, 2021
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Peter MOENS, Piet VANMEERBEEK, Abhishek BANERJEE
  • Patent number: 10928874
    Abstract: In one example, a system for bypass switch control includes a controller coupled to a number of backup power modules and to a number of bypass switches that correspond to each of the number of backup power modules, wherein the controller activates a bypass switch when a corresponding backup power module is deactivated.
    Type: Grant
    Filed: October 29, 2015
    Date of Patent: February 23, 2021
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Hai Ngoc Nguyen, Abhishek Banerjee, Darrel G. Gaston