Abstract: An electronic device can include a channel layer including AlzGa(1-z)N, where 0?z?0.1; a gate dielectric layer; and a gate electrode of a high electron mobility transistor (HEMT). The gate dielectric layer can be disposed between the channel layer and the gate electrode. The gate electrode includes a gate electrode film that contacts the gate dielectric layer, wherein the gate electrode film can include a material, wherein the material has a sum of an electron affinity and a bandgap energy of at least 6 eV. In some embodiments, the material can include a p-type semiconductor material. The particular material for the gate electrode film can be selected to achieve a desired threshold voltage for an enhancement-mode HEMT. In another embodiment, a portion of the barrier layer can be left intact under the gate structure. Such a configuration can improve carrier mobility and reduce Rdson.

Abstract: An electronic device including a transistor structure, and a process of forming the electronic device can include providing a workpiece including a substrate, a first layer, and a channel layer including a compound semiconductor material; and implanting a species into the workpiece such that the projected range extends at least into the channel and first layers, and the implant is performed into an area corresponding to at least a source region of the transistor structure. In an embodiment, the area corresponds to substantially all area occupied by the transistor structure. In another embodiment, the implant can form crystal defects within layers between the substrate and source, gate, and drain electrodes. The crystal defects may allow resistive coupling between the substrate and the channel structure within the transistor structure. The resistive coupling allows for better dynamic on-state resistance and potentially other electrical properties.

Abstract: An electronic device can include a channel layer, a first carrier supply layer, a gate electrode of a HEMT, and a drain electrode of the HEMT. The HEMT can have a 2DEG along an interface between the channel and first carrier supply layers. In an aspect, the 2DEG can have a highest density that is the highest at a point between the drain and gate electrodes. In another aspect, the HEMT can further comprise first and second carrier supply layers, wherein the first carrier supply layer is disposed between the channel and second carrier supply layers. The second carrier supply layer be thicker at a location between the drain and gate electrodes. In a further aspect, a process of forming an electronic device can include the HEMT. In a particular embodiment, first and second carrier supply layers can be epitaxially grown from an underlying layer.

Abstract: The disclosure relates to a system that detects customers traveling to a merchant site, predicts products they are interested in purchasing at that merchant site, and collects those products at the merchant site for purchase before the customer arrives. Prediction of products is accomplished by comparing a consumer profile to the products carried at the merchant site. Matching products are transmitted to the merchant site, which then collects the products together as a completed order for the consumer to simply pick up as soon as he or she enters the store. In this manner, customers receive the products they likely want without having to spend the time and effort of manually collecting each product themselves.

Abstract: An electronic device can include a drain electrode of a high electron mobility transistor overlying a channel layer; a source electrode overlying the channel layer, wherein a lowermost portion of the source electrode overlies at least a portion of the channel layer; and a gate electrode of the high electron mobility transistor overlying the channel layer; and a current limiting control structure that controls current passing between the drain and source electrodes. The current limiting control structure can be disposed between the source and gate electrodes, the current limiting control structure can be coupled to the source electrode and the first high electron mobility transistor, and the current limiting control structure has a threshold voltage. The current limiting control structure can be a Schottky-gated HEMT or a MISHEMT.

Abstract: In some embodiments, a method comprises receiving at least two parameters for a gift exchange from an organizer of the gift exchange. The at least two parameters can comprise a set of participants and a budget. The method further comprises identifying a gift exchange recipient for a respective participant in the set of participants, determining one or more gifts for the gift exchange recipient based at least in part on the budget and a first trust graph, and arranging for display the one or more determined gifts to the respective participant. In many embodiments, the first trust comprises levels of trust associated with the gift exchange recipient. Other embodiments also are disclosed herein.

Abstract: An electronic device can include a channel layer including AlzGa(1-z)N, where 0?z?0.1; a gate dielectric layer; and a gate electrode of a high electron mobility transistor (HEMT). The gate dielectric layer can be disposed between the channel layer and the gate electrode. The gate electrode includes a gate electrode film that contacts the gate dielectric layer, wherein the gate electrode film can include a material, wherein the material has a sum of an electron affinity and a bandgap energy of at least 6 eV. In some embodiments, the material can include a p-type semiconductor material. The particular material for the gate electrode film can be selected to achieve a desired threshold voltage for an enhancement-mode HEMT. In another embodiment, a portion of the barrier layer can be left intact under the gate structure. Such a configuration can improve carrier mobility and reduce Rdson.

Abstract: Systems and methods for, while a user is consuming a first media asset, generating for the user a recommendation of a second media asset based on a viewing history of the user. In some aspects, the systems and methods determine that a user is consuming only video of a first media asset, determine a first category for the first media asset, and retrieve a viewing history corresponding to the user. The viewing history comprises media assets consumed simultaneously with a media asset corresponding to the first category. The systems and methods select a second category corresponding to a highest number of media assets in the viewing history, select a second media asset based on the second category. Alternatively, the user can select the second media asset manually. The systems and methods generate for output the audio of the second media asset for simultaneous consumption with the video of the first media asset.

Abstract: A process of forming an electronic device can include forming a channel layer overlying a substrate and forming a barrier layer overlying the channel layer. In an embodiment, the process can further include forming a p-type semiconductor layer over the barrier layer, patterning the p-type semiconductor layer to define at least part of a gate electrode of a transistor structure, and forming an access region layer over the barrier layer. In another embodiment, the process can further include forming an etch-stop layer over the barrier layer, forming a sacrificial layer over the etch-stop layer, patterning the etch-stop and sacrificial layers to define a gate region, forming an access region layer over the barrier layer after patterning the etch-stop and sacrificial layers, and forming a p-type semiconductor layer within the gate region.

Abstract: An electronic device can include a channel layer; an access region having an aluminum content substantially uniform or increasing with distance from the channel layer; and a gate dielectric layer overlying and contacting the channel layer. A process of forming an electronic device can include providing a substrate and a channel layer of a III-V semiconductor material over the substrate; forming a masking feature over the channel layer; and forming an access region over the channel layer. In an embodiment, the channel layer can include GaN, and the access region has an aluminum content that is substantially uniform or increases with distance from the channel layer. In another embodiment, the process can include removing at least a portion the masking feature and forming a gate dielectric layer over the channel layer. A dielectric film of the masking feature or the gate dielectric layer contacts the channel layer.

Abstract: In various examples, a system comprises a rack-mountable power distribution unit (PDU). The PDU may: receive an alternating current (AC) power feed, convert the AC to a direct current (DC) power pool, determine an amount of available amount of power of the DC power pool to be delivered to devices electrically coupled to the PDU, and output the DC power pool to the devices coupled to the PDU based on the amount of available power.

Abstract: An apparatus includes a plurality of energy storage modules (ESMs) to store charge. Each ESM includes module inputs to receive the charge. A plurality of charging circuits supply electrical energy to charge the ESMs via an output from each of the charging circuits. A switch network selectively switches each of the outputs from each of the charging circuits to the respective module inputs of each of the ESMs in response to a control command.

Abstract: In an example, an apparatus includes a charger for rectifying a direct current charge from an input alternating current voltage. A battery pack stores the direct current charge in a first string of battery modules and a second string of battery modules. An inverter is connected directly to the battery pack and inverts the direct current voltage to an output alternating current voltage. In one example, the first string of battery modules is directly connected to the inverter in parallel with the second string of battery modules.

Abstract: Examples disclosed herein relate to dual in-line memory module (DIMM) battery backup. Some examples disclosed herein describe systems that include a backup power source pluggable into a DIMM slot. The backup power source may include a plurality of battery cells electrically connected to a DIMM to provide backup power to the DIMM. Each of the plurality of battery cells supporting the DIMM may be electrically connected to a DC-to-DC converter in series and to each other in parallel.

Abstract: A system for two-phase immersion cooling includes an immersion tank, and a plurality of busbars, each busbar extending through a wall of the immersion tank. The system also includes a plurality of voltage converters mounted on a skid, on which the immersion tank can also be mounted. The system preferably includes means for preventing leakage of dielectric fluid around the busbars and means for connecting each busbar plate to the modular cases holding circuit boards that can be inserted into the immersion tank.

Abstract: An electronic device can include a transistor. The transistor can include a first layer including a first III-V material, a second layer overlying the first layer and including a second III-V material, and a third layer overlying the first layer and including a third III-V material. In an embodiment, each of the first and second layers includes Al, and the second layer has a higher Al content as compared to the first layer. In another embodiment, the transistor can further include a gate dielectric layer overlying the third layer, and a gate electrode of the transistor overlying the gate dielectric layer and the third layer. The transistor can be an enhancement-mode high electron mobility transistor. The configuration of layers can allow for a relatively higher threshold voltage, as compared to conventional enhancement-mode high electron mobility transistor, to be achieved without significantly affecting RDSON.

Abstract: Systems and methods for, while a user is consuming a first media asset, generating for the user a recommendation of a second media asset based on a viewing history of the user. In some aspects, the systems and methods determine that a user is consuming only video of a first media asset, determine a first category for the first media asset, and retrieve a viewing history corresponding to the user. The viewing history comprises media assets consumed simultaneously with a media asset corresponding to the first category. The systems and methods select a second category corresponding to a highest number of media assets in the viewing history, select a second media asset based on the second category. Alternatively, the user can select the second media asset manually. The systems and methods generate for output the audio of the second media asset for simultaneous consumption with the video of the first media asset.

Abstract: A two-phase immersion cooling system includes two or more voltage converters and a plurality of circuit boards, which are held in a modular case inside an immersion tank. A layout for distributing electric power includes at least two busbars that are electrically connected in parallel to the positive and the negative terminals of the voltage converters, respectively. Each of the plurality of circuit boards is connected to the two busbars via wires that are bundled into wire harnesses. Each wire harness connects a series of connectors longitudinally aligned across the plurality of boards, to the two busbars.

Abstract: Examples disclosed herein relate to dual in-line memory module (DIMM) battery backup. Some examples disclosed herein describe systems that include a backup power source pluggable into a DIMM slot. The backup power source may include a plurality of battery cells electrically connected to a DIMM to provide backup power to the DIMM. Each of the plurality of battery cells supporting the DIMM may be electrically connected to a DC-to-DC converter in series and to each other in parallel.

Abstract: Techniques for providing an uninterruptible power supply are disclosed. An example system includes three single-phase Uninterruptible Power Supplies (UPSs) and an adapter. The adapter is to receive three-phase AC power, and separate the three-phase AC power into three separate single-phase outputs. Each single-phase output is coupled to an input of one of the three single-phase UPSs. An output of each one of the single-phase UPSs is coupled to one of three single-phase inputs of the adapter, and the adapter is to combine the three single-phase inputs into a single three-phase output.