Abstract: Biodegradable polyesters are made by synthesizing copolymers derived from biodegradable hydroxyacid monomers as well as from hydroxyacid monomers containing a functional group such as an azide group, a halogen group, a thioacetate group, and the like. Preferably, the functionalized biodegradable polyester copolymers are derived from a functionalized hydroxyacid such as a homolog of lactic acid and/or glycolic acid with the copolyester thus containing functional groups on the backbone thereof. These biodegradable polyesters can be utilized wherever biodegradable polyesters are currently used, and also serve as a polymer to which various medical and drug delivery systems can be attached.

Abstract: Techniques described herein relate to generating graph-oriented data structures based on cross-channel multi-user transaction and/or interaction data from one or more data sources, Additional techniques relate to analyzing and processing transactions using the graph-oriented data structures. Transaction data may be received from various data sources, and analyzed to determine subsets of the transaction data relating to interactions between specific pairs of users. Graph-oriented data structures may be generated based on the subsets of transaction data relating to the specific pairs of users, and may be used to analyze and process transaction requests.

Abstract: According to an example, a battery is charged using a charge voltage based on a present state of charge of the battery and a present ambient temperature of the battery. Additionally, the charge voltage may be based on the present state of charge of the battery, the present ambient temperature of the battery, and an age of the battery. The charge voltage may be retrieved from a lookup table that includes a plurality of reference charge voltage values at which to charge the battery for different ambient temperatures, different states of charge, or different ages of the battery.

Abstract: In one embodiment, a III-V high electron mobility semiconductor device includes a semiconductor substrate including a GaN layer, an AlGaN layer on the GaN layer wherein a 2 DEG is formed near an interface of the GaN layer and the AlGaN layer. An insulator may be on at least a first portion of the AlGaN layer and a P-type GaN gate region may be overlying a second portion of the AlGaN layer wherein the 2 DEG does not underlie the P-type GaN gate region.

Abstract: Examples disclosed herein relate to dual in-line memory module (DIMM) battery backup. Some examples disclosed herein describe systems that include a backup power source pluggable into a DIMM slot. The backup power source may include a plurality of battery cells electrically connected to a DIMM to provide backup power to the DIMM. Each of the plurality of battery cells supporting the DIMM may be electrically connected to a DC-to-DC converter in series and to each other in parallel.

Abstract: Examples disclosed herein involve backup power management. In an example, an amount of backup power to power a load bank is estimated, a set of power sources are selected from a plurality of power sources based on respective states of charge of the plurality of power sources and the estimated amount of backup power, and the selected set of power sources are placed in circuit to provide backup power to the load bank via the selected set of power sources.

Abstract: Examples described herein include receiving current values of a power device, determining a spike situation of the power device, determining a power course for the power device, and operating the power device according to the power course. The current values may include a first current value at a first time and a second current value at a second time. The power course may be determined based on a plurality of current change values associated with the spike situation, a total number of spikes associated with the spike situation, and a duration of at least one spike out of the total number of spikes associated with the spike situation.

Abstract: In one embodiment, a high electron mobility device structure includes heterostructure with a Group III-nitride channel layer and a Group III-nitride barrier layer that forms a two-dimensional electron gas layer at an interface between the two layers. At least one current carrying electrode includes a recess-structured conductive contact adjoining and making Ohmic contact with the two-dimensional electron gas layer. The recess-structured conductive contact has at least one side surface defined to have a rounded wavy shape.

Abstract: In an example, an apparatus includes a charger for rectifying a direct current charge from an input alternating current voltage. A battery pack stores the direct current charge in a first string of battery modules and a second string of battery modules. An inverter is connected directly to the battery pack and inverts the direct current voltage to an output alternating current voltage. In one example, the first string of battery modules is directly connected to the inverter in parallel with the second string of battery modules.

Abstract: An uninterruptible power supply (UPS) includes a first battery set and a second battery set. The UPS includes a charging circuit to charge the battery sets using alternating current (AC) power. The UPS includes a slot receptive to insertion of different types of output modules that each include an inverter to convert direct current (DC) power from the first and second battery sets, including a first type that connects the first and second battery sets in parallel and a second type that connects the battery first and second sets in series.

Abstract: A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.

Abstract: Examples disclosed herein relate to dual in-line memory module (DIMM) battery backup. Some examples disclosed herein describe systems that include a backup power source pluggable into a DIMM slot. The backup power source may include a plurality of battery cells electrically connected to a DIMM to provide backup power to the DIMM. Each of the plurality of battery cells supporting the DIMM may be electrically connected to a DC-to-DC converter in series and to each other in parallel.

Abstract: An electronic device can include a substrate having a primary surface; a monocrystalline semiconductor film overlying the primary surface of the substrate; and a polycrystalline compound semiconductor layer adjacent to the monocrystalline semiconductor film. In an embodiment, the polycrystalline compound semiconductor layer has a dopant concentration at most 1×1016 atoms/cm3, a donor concentration of greater than 1×1017 donors/cm3, and is part of a contact of an electrode of a transistor. In another embodiment, the electronic device can further include an interconnect over the polycrystalline compound semiconductor layer, wherein a combination of the interconnect and polycrystalline compound semiconductor layer form an ohmic contact. In a further embodiment, a polycrystalline compound semiconductor layer can be adjacent to the monocrystalline semiconductor film, wherein an energy level of a conduction band of the polycrystalline compound semiconductor layer is lower than its Fermi energy level.

Abstract: Techniques are disclosed for providing secure transaction functionality using a centralized digital gateway configured to process transactions of various types, using different transaction processing entities, within a single processing flow. The digital gateway may implement rules and logic to optimize transaction processing costs. Additionally, transaction authorization, various types of transaction analyses, and transaction processing and dispatch processes may be performed in parallel, as directed by the implemented rules and logic, in order to optimize transaction processing costs and processing speeds. Further, digital gateway may be configured to normalize transaction request data across different transaction types, allowing the transaction request data to be transmitted in a uniform manner to related back-end systems, partner systems, and transaction processors.

Abstract: Biodegradable polyesters are made by synthesizing copolymers derived from biodegradable hydroxyacid monomers as well as from hydroxyacid monomers containing a functional group such as an azide group, a halogen group, a thioacetate group, and the like. Preferably, the functionalized biodegradable polyester copolymers are derived from a functionalized hydroxyacid such as a homolog of lactic acid and/or glycolic acid with the copolyester thus containing functional groups on the backbone thereof. These biodegradable polyesters can be utilized wherever biodegradable polyesters are currently used, and also serve as a polymer to which various medical and drug delivery systems can be attached.

Abstract: A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.

Abstract: In some embodiments, a method comprises receiving at least two parameters for a gift exchange from an organizer of the gift exchange. The at least two parameters can comprise a set of participants and a budget. The method further comprises identifying a gift exchange recipient for a respective participant in the set of participants, determining one or more gifts for the gift exchange recipient based at least in part on the budget and a first trust graph, and arranging for display the one or more determined gifts to the respective participant. In many embodiments, the first trust comprises levels of trust associated with the gift exchange recipient. Other embodiments also are disclosed herein.

Abstract: In some embodiments, a method of trusted gifting comprises, identifying a first user, identifying a second user associated with an event, and determining one or more potential products for the second user according to one or more criteria. In many embodiments, the method further comprises causing at least one product of the one or more determined potential products to be purchased for the second user by the first user. Other embodiments also are disclosed herein.

Abstract: A HEMT semiconductor device can include a dielectric layer that includes a silicon nitride film and an AlN film. In an embodiment, the HEMT semiconductor device can include a GaN film and an AlGaN film. In a process of forming the HEMT device, the AlN can provide an etch stop when forming an opening for a gate electrode.

Abstract: Sensor circuitry including probabilistic switching devices, such as spin-transfer torque magnetic tunnel junctions (STT-MTJs), is configured to perform ultra-low power analog to digital conversion and compressive sensing. The analog to digital conversion and compressive sensing processes are performed simultaneously and in a manner that is native to the devices due to their probabilistic switching characteristics.