Abstract: A solid-state image sensor acquires signals through sequential reading, in signal lines disposed along a column direction, of signals from pixels disposed in the form of a matrix. The solid-state image sensor has a plurality of first pixels that are disposed in the form of a matrix in the solid-state image sensor; and a plurality of second pixels having an in-pixel memory and disposed in the form of a matrix in columns different from those of the plurality of first pixels in the solid-state image sensor. A difference in exposure timings of the second pixels between adjacent rows is caused to be different from that of the first pixels between adjacent rows, through reading of signals from the plurality of second pixels after holding in the in-pixel memories for a predetermined charge retention time.

Abstract: A solid-state image sensor includes first and second ranging pixels that detect an incident light beam in the solid-state image sensor by separating the incident light beam in a first and second direction, respectively. The angle between the second direction and a column direction is smaller than the angle between the first direction and the column direction. A difference in exposure timings of second ranging pixels disposed in different rows is made smaller than that of first ranging pixels disposed in different rows, by causing to vary, for each row, a time over which charge is held in the in-pixel memories, in the plurality of second ranging pixels disposed in different rows.

Abstract: An image processing apparatus includes: a distance calculation unit configured to calculate distance information on the basis of a first image and a second image; and a blur addition unit configured to add a blur to original images based on the first image and the second image, using the distance information calculated by the distance calculation unit and to move a focus plane by a predetermined refocus distance. The blur addition unit adds the blur to a first original image when the refocus distance is equal to or less than a threshold and adds the blur to a second original image, which is an image having an effective F-number greater than an effective F-number of the first original image, when the refocus distance is greater than the threshold.

Abstract: A solid-state imaging device is provided in which ranging signals can be acquired while acquiring imaging signals having different sensitivities from each other, and also preventing ranging precision from deteriorating. A pixel includes a first photoelectric conversion region and a second photoelectric conversion region that have different sensitivities from each other and are arrayed in parallel in a first direction, and a first barrier region that is sandwiched between the first photoelectric conversion region and the second photoelectric conversion region. The first photoelectric conversion region includes a first photoelectric conversion portion and a second photoelectric conversion portion arrayed in parallel in a second direction that intersects the first direction, and a second barrier region sandwiched between the first photoelectric conversion portion and the second photoelectric conversion portion.

Abstract: The present invention provides a solid-state image sensor in which degradation in image quality can be reduced. The solid-state image sensor includes an optical isolation layer between a pupil dividing unit and a plurality of photoelectric conversion units. The optical isolation layer includes a plurality of high-refractive-index areas and a low-refractive-index area having a lower refractive index than that of the high-refractive-index areas. The high-refractive-index areas are disposed above the photoelectric conversion units, and the low-refractive-index area is disposed between the high-refractive-index areas. The refractive index changes stepwise at the boundaries between the high-refractive-index areas and the low-refractive-index area. The refractive index difference of the stepwise changing portion is 0.15 or more. A value obtained by multiplying the physical thickness of the optical isolation layer by the refractive index of the high-refractive-index areas is 2.

Abstract: An image sensor includes a plurality of pixels. Each of the plurality of pixels includes a microlens, a waveguide unit having a core and a cladding and capable of propagating light transmitted through the microlens, and a pair of photo diodes and configured to carry out photoelectric conversion of light guided by the waveguide unit. Each of the pixels includes an absorption unit that is electrically independent, and the absorption unit has an optical absorptance with respect to a light beam to be photoelectrically converted by the pair of photo diodes higher than an optical absorptance of the core and of the cladding. An optical distance between the absorption unit and an interface of the cladding and the core on the side toward the microlens is no greater than a wavelength of the light beam to be converted.

Abstract: A ranging pixel located in a peripheral region of a solid-state image sensor includes a microlens having a center axis that is shifted relative to a center axis of the ranging pixel, a first waveguide, and a second waveguide. The first waveguide is disposed on a side of the center axis of the ranging pixel that is in a direction opposite to a direction (projection shift direction) obtained by projecting a shift direction of the microlens onto a straight line connecting a center of the first waveguide and a center of the second waveguide, and the second waveguide is disposed on another side of the center axis of the ranging pixel that is in a direction identical to the projection shift direction of the microlens. In addition, at least one of the difference between the refractive indices of the core and the clad and the cross-sectional area of the core is greater in the first waveguide than in the second waveguide.

Abstract: The present invention concerns an imaging apparatus having a plurality of pixels, each of the pixels including: a first photoelectric converter; a first pixel memory; a first transfer unit configured to transfer charges from the first photoelectric converter to the first pixel memory; a second photoelectric converter; a second pixel memory; a second transfer unit configured to transfer charges from the second photoelectric converter to the second pixel memory; and a switch adapted to control an electric connection state between the first pixel memory and the second pixel memory, wherein the exposure time of the first photoelectric converter is longer than the exposure time of the second photoelectric converter.

Abstract: A solid-state image sensor includes first and second ranging pixels that detect an incident light beam in the solid-state image sensor by separating the incident light beam in a first and second direction, respectively. The angle between the second direction and a column direction is smaller than the angle between the first direction and the column direction. A difference in exposure timings of second ranging pixels disposed in different rows is made smaller than that of first ranging pixels disposed in different rows, by causing to vary, for each row, a time over which charge is held in the in-pixel memories, in the plurality of second ranging pixels disposed in different rows.

Abstract: A solid-state image sensor acquires signals through sequential reading, in signal lines disposed along a column direction, of signals from pixels disposed in the form of a matrix. The solid-state image sensor has a plurality of first pixels that are disposed in the form of a matrix in the solid-state image sensor; and a plurality of second pixels having an in-pixel memory and disposed in the form of a matrix in columns different from those of the plurality of first pixels in the solid-state image sensor. A difference in exposure timings of the second pixels between adjacent rows is caused to be different from that of the first pixels between adjacent rows, through reading of signals from the plurality of second pixels after holding in the in-pixel memories for a predetermined charge retention time.

Abstract: A color filter array includes a plurality of color filters having different center frequencies and each formed of static metal structures and an insulator, a first common electrode formed across the plurality of color filters, a second common electrode opposed to the first common electrode, separated from the static metal structures of the plurality of color filters by the insulator, and formed across the plurality of color filters, and a voltage applying unit configured to apply a voltage between the first common electrode and the second common electrode and change charge density on the surfaces of the static metal structures to thereby simultaneously change the center frequencies of the plurality of color filters.

Abstract: A solid-state imaging device is provided in which ranging signals can be acquired while acquiring imaging signals having different sensitivities from each other, and also preventing ranging precision from deteriorating. A pixel includes a first photoelectric conversion region and a second photoelectric conversion region that have different sensitivities from each other and are arrayed in parallel in a first direction, and a first barrier region that is sandwiched between the first photoelectric conversion region and the second photoelectric conversion region. The first photoelectric conversion region includes a first photoelectric conversion portion and a second photoelectric conversion portion arrayed in parallel in a second direction that intersects the first direction, and a second barrier region sandwiched between the first photoelectric conversion portion and the second photoelectric conversion portion.

Abstract: A solid-state image sensor includes pixels each including first and second photoelectric conversion portions provided in a substrate, the second photoelectric conversion portion having lower sensitivity than the first photoelectric conversion portion; a barrier region provided between the first and second photoelectric conversion portions; a waveguide provided on a light-entrance side of the substrate and including a core and a cladding; and a protective layer provided between the waveguide and the substrate. Seen in a direction perpendicular to the substrate, a center of an exit face of the core is on a first-photoelectric-conversion-portion side with respect to a center of the barrier region in each pixel in a central part of a pixel area. A standard deviation of a refractive-index distribution of the protective layer in a region directly below the exit face of the core is 0.1 or smaller in an in-plane direction of the substrate.

Abstract: A ranging pixel located in a peripheral region of a solid-state image sensor includes a microlens having a center axis that is shifted relative to a center axis of the ranging pixel, a first photoelectric conversion unit, and a second photoelectric conversion unit. The first photoelectric conversion unit is disposed on a side of the center axis of the ranging pixel that is in a direction opposite to a direction (projection shift direction) obtained by projecting a shift direction of the microlens onto a straight line connecting a center of the first photoelectric conversion unit and a center of the second photoelectric conversion unit, and the second photoelectric conversion unit is disposed on another side of the center axis of the ranging pixel that is in a direction identical to the projection shift direction of the microlens. In addition, the area of the first photoelectric conversion unit is greater than the area of the second photoelectric conversion unit.

Abstract: A solid-state image sensor includes pixels each including first and second photoelectric conversion portions provided in a substrate, the second photoelectric conversion portion having lower sensitivity than the first photoelectric conversion portion; a barrier region provided between the first and second photoelectric conversion portions; a waveguide provided on a light-entrance side of the substrate and including a core and a cladding; and a protective layer provided between the waveguide and the substrate. Seen in a direction perpendicular to the substrate, a center of an exit face of the core is on a first-photoelectric-conversion-portion side with respect to a center of the barrier region in each pixel in a central part of a pixel area. A standard deviation of a refractive-index distribution of the protective layer in a region directly below the exit face of the core is 0.1 or smaller in an in-plane direction of the substrate.

Abstract: A solid-state image sensor provided with a plurality of pixels which photo-electrically convert an object image formed by an imaging optical system, wherein at least a portion of the plurality of pixels are ranging pixels in which a first photoelectric conversion unit, a barrier region and a second photoelectric conversion unit are provided in alignment in a first direction in this sequence; in the peripheral regions where are distanced from a straight line perpendicular to the first direction and passing through the center of the solid-state image sensor, for more than half of the ranging pixels, the barrier region is situated eccentrically in a direction parallel to the first direction.

Abstract: The present invention provides a solid-state image sensor in which degradation in image quality can be reduced. The solid-state image sensor includes an optical isolation layer between a pupil dividing unit and a plurality of photoelectric conversion units. The optical isolation layer includes a plurality of high-refractive-index areas and a low-refractive-index area having a lower refractive index than that of the high-refractive-index areas. The high-refractive-index areas are disposed above the photoelectric conversion units, and the low-refractive-index area is disposed between the high-refractive-index areas. The refractive index changes stepwise at the boundaries between the high-refractive-index areas and the low-refractive-index area. The refractive index difference of the stepwise changing portion is 0.15 or more. A value obtained by multiplying the physical thickness of the optical isolation layer by the refractive index of the high-refractive-index areas is 2.

Abstract: A solid-state imaging sensor provided with a plurality of pixels which convert an object image formed by an imaging optical system into an electrical signal, at least a part of the pixels being ranging pixels in which a first and a second photoelectric conversion unit are provided in alignment in a first direction, and in more than half of the ranging pixels in one of peripheral region of the solid-state sensor, the capacitance of the first photoelectric conversion unit being greater than the capacitance of the second photoelectric conversion unit; and in more than half of the ranging pixels in the other of peripheral region of the solid-state sensor, the capacitance of the second photoelectric conversion unit being greater than the capacitance of the first photoelectric conversion unit.

Abstract: The invention provides a solid-state image sensor including a pixel having a plurality of photoelectric conversion portions and at least one waveguide arranged closer to a side of light incidence than the photoelectric conversion portions, wherein the waveguide has a core member and a cladding member formed of a medium having a refractive index lower than that of the core member, and wherein a layer formed of a medium having a refractive index lower than that of the core member of the waveguide is provided between the photoelectric conversion portions and the waveguide.

Abstract: A solid-state imaging sensor provided with a plurality of pixels which convert an object image formed by an imaging optical system into an electrical signal, at least a part of the pixels being ranging pixels in which a first and a second photoelectric conversion unit are provided in alignment in a first direction, and in more than half of the ranging pixels in one of peripheral region of the solid-state sensor, the capacitance of the first photoelectric conversion unit being greater than the capacitance of the second photoelectric conversion unit; and in more than half of the ranging pixels in the other of peripheral region of the solid-state sensor, the capacitance of the second photoelectric conversion unit being greater than the capacitance of the first photoelectric conversion unit.