Abstract: A method of producing a three-dimensional photonic crystal by laminating a layer having a periodic structure, the method including the steps of forming a first structure and a second structure each including the layer having the periodic structure; and bonding a first bonding layer of the first structure and a second bonding layer of the second structure. The first bonding layer is one layer obtained by dividing a layer constituting the three-dimensional photonic crystal at a cross section perpendicular to a lamination direction, and the second bonding layer is the other layer obtained by dividing the layer constituting the three-dimensional photonic crystal at the cross section perpendicular to the lamination direction.

Abstract: The three-dimensional photonic crystal light emitting device includes a three-dimensional photonic crystal, and a defect forming a resonator in the three-dimensional photonic crystal. In the three-dimensional photonic crystal, an N-cladding layer formed of an N-type semiconductor, an active layer disposed inside the resonator, a P-cladding layer formed of a P-type semiconductor, a tunnel junction layer, and a first N-conductive layer formed of a first N-type conductor are arranged in this order. Electric conductivity of the first N-type conductor is higher than that of the P-type semiconductor. The light emitting device achieves high carrier injection efficiency and a high optical confinement effect.

Abstract: In a light emitting device, efficiency and stability are improved. A light emitting device 10 includes a three-dimensional photonic crystal 20. The three-dimensional photonic crystal includes a first defect part 70 forming a resonator including an active medium, a second defect part 80 forming a waveguide for taking out light generated by the resonator, a P clad part 40 formed of a P-type semiconductor, and a N clad part 50 formed of a first N-type semiconductor. The second defect part is provided only in the N clad part among the P clad part and the N clad part. At least a part of the second defect part is formed of a second N-type semiconductor and constitutes a heat radiation unit which radiates a heat to the outside.

Abstract: At least one exemplary embodiment is directed to a waveguide, which includes a three-dimensional photonic crystal including a first linear defect and a second linear defect. The first linear defect is disposed at part of columnar structures and is formed of a medium different from the columnar structures. The second linear defect is disposed at part of columnar structures extending in the longitudinal direction of the first linear defect and is formed of a medium having a refractive index different from that of the medium used for the columnar structures. The second linear defect is separated from the first linear defect by a distance of at least 0.5 times the out-of-plane lattice period of the three-dimensional photonic crystal in a direction in which layers including the columnar structures are stacked.

Abstract: A three-dimensional photonic crystal includes a structure that includes first, second, third, and fourth layers in this order. The structure of each layer includes a flat surface as one end surface, and first, second, and third structural portions. The first structural portion has a first width along the flat surface and a first height from the flat surface. The second structural portion has a second width larger than the first width and a second height larger than the first height. The third structural portion has a width and a height that continuously or stepwise change in the extending direction of the structure. The flat surface at the structural portion of one of two adjacent layers in the first layer to the fourth layer contacts a surface opposite to the flat surface at the second structural portion of the other of the two adjacent layers.

Abstract: In a light emitting device, efficiency and stability are improved. A light emitting device 10 includes a three-dimensional photonic crystal 20. The three-dimensional photonic crystal includes a first defect part 70 forming a resonator including an active medium, a second defect part 80 forming a waveguide for taking out light generated by the resonator, a P clad part 40 formed of a P-type semiconductor, and a N clad part 50 formed of a first N-type semiconductor. The second defect part is provided only in the N clad part among the P clad part and the N clad part. At least a part of the second defect part is formed of a second N-type semiconductor and constitutes a heat radiation unit which radiates a heat to the outside.

Abstract: A waveguide based on a three-dimensional photonic crystal is arranged to provide wave-guiding in a single mode and a mode having a field strength distribution with unimodality in a plane perpendicular to the wave-guiding direction, to thereby enable wave-guiding in a desired frequency band, wherein the three-dimensional photonic crystal has a plurality of line defect members which include a first line defect member made of a medium having a refractive index not smaller than that of the columnar structures and formed in a direction perpendicular to the direction in which the columnar structures extend, and a second line defect member formed in the same direction as the first line defect member.

Abstract: The three-dimensional photonic crystal light emitting device includes a three-dimensional photonic crystal, and a defect forming a resonator in the three-dimensional photonic crystal. In the three-dimensional photonic crystal, an N-cladding layer formed of an N-type semiconductor, an active layer disposed inside the resonator, a P-cladding layer formed of a P-type semiconductor, a tunnel junction layer, and a first N-conductive layer formed of a first N-type conductor are arranged in this order. Electric conductivity of the first N-type conductor is higher than that of the P-type semiconductor. The light emitting device achieves high carrier injection efficiency and a high optical confinement effect.

Abstract: A three-dimensional photonic crystal includes a structure that includes first, second, third, and fourth layers in this order. The structure of each layer includes a flat surface as one end surface, and first, second, and third structural portions. The first structural portion has a first width along the flat surface and a first height from the flat surface. The second structural portion has a second width larger than the first width and a second height larger than the first height. The third structural portion has a width and a height that continuously or stepwise change in the extending direction of the structure. The flat surface at the structural portion of one of two adjacent layers in the first layer to the fourth layer contacts a surface opposite to the flat surface at the second structural portion of the other of the two adjacent layers.

Abstract: A waveguide based on a three-dimensional photonic crystal is arranged to provide wave-guiding in a single mode and a mode having a field strength distribution with unimodality in a plane perpendicular to the wave-guiding direction, to thereby enable wave-guiding in a desired frequency band, wherein the three-dimensional photonic crystal has a plurality of line defect members which include a first line defect member made of a medium having a refractive index not smaller than that of the columnar structures and formed in a direction perpendicular to the direction in which the columnar structures extend, and a second line defect member formed in the same direction as the first line defect member.

Abstract: At least one exemplary embodiment is directed to a waveguide including a plurality of linear defects of a three-dimensional photonic crystal, the plurality of linear defects include a first defect formed by changing the medium of some of columnar structures to a medium different from that of the columnar structures and a second linear defect formed by shifting the position or changing the shape of some of the columnar structures extending in the same direction as the first linear defect, and the first linear defect and the second linear defect are disposed apart by 0.5 times the out-of-plane lattice period or more in the stacking direction of the three-dimensional photonic crystal.

Abstract: At least one exemplary embodiment is directed to a waveguide including a plurality of linear defects of a three-dimensional photonic crystal, the plurality of linear defects include a first defect formed by changing the medium of some of columnar structures to a medium different from that of the columnar structures and a second linear defect formed by shifting the position or changing the shape of some of the columnar structures extending in the same direction as the first linear defect, and the first linear defect and the second linear defect are disposed apart by 0.5 times the out-of-plane lattice period or more in the stacking direction of the three-dimensional photonic crystal.

Abstract: At least one exemplary embodiment is directed to a waveguide, which includes a three-dimensional photonic crystal including a first linear defect and a second linear defect. The first linear defect is disposed at part of columnar structures and is formed of a medium different from the columnar structures. The second linear defect is disposed at part of columnar structures extending in the longitudinal direction of the first linear defect and is formed of a medium having a refractive index different from that of the medium used for the columnar structures. The second linear defect is separated from the first linear defect by a distance of at least 0.5 times the out-of-plane lattice period of the three-dimensional photonic crystal in a direction in which layers including the columnar structures are stacked.