Abstract: The invention provides a solid-state image sensor including a pixel having a plurality of photoelectric conversion portions and at least one waveguide arranged closer to a side of light incidence than the photoelectric conversion portions, wherein the waveguide has a core member and a cladding member formed of a medium having a refractive index lower than that of the core member, and wherein a layer formed of a medium having a refractive index lower than that of the core member of the waveguide is provided between the photoelectric conversion portions and the waveguide.

Abstract: A photonic crystal surface emitting laser, having an n-type cladding layer formed on a substrate; an active layer formed on the n-type cladding layer; an electron blocking layer formed on the active layer and made of a second p-type semiconductor; and a two-dimensional photonic crystal layer that is formed on the electron blocking layer, includes a plurality of layers that are made of a first p-type semiconductor and have different band gaps, and has a high and a low refractive index portion in an in-plane direction. The band gaps of the plurality of layers are smaller than a band gap of the second p-type semiconductor and decrease stepwise or continuously in a lamination direction of the plurality of layers. A third p-type semiconductor having an acceptor doping concentration smaller than that of the second p-type semiconductor is disposed so as to cover a surface of the electron blocking layer.

Abstract: A surface emitting laser includes a stepped structure having a step between a first region and a second region, the stepped structure provided in an emission area located in an upper portion of the upper mirror. The surface emitting laser includes a light shielding member provided in a third region between the first region and the second region. The light shielding member is not provided in a portion of the first region and a portion of the second region.

Abstract: A surface emitting laser includes an active layer; a periodic-structure layer including a low-refractive-index medium and a high-refractive-index medium and whose refractive index varies periodically, the periodic-structure layer being provided at a position where light emitted from the active layer couples therewith; and a pair of electrodes from which electricity is supplied to the active layer. The periodic-structure layer is patterned as a square periodic-structure lattice. At least one of the electrodes includes one or more linear electrodes. A direction of each lattice vector of the periodic structure and a longitudinal direction of the linear electrodes are different from each other.

Abstract: A method of producing a three-dimensional photonic crystal by laminating a layer having a periodic structure, the method including the steps of forming a first structure and a second structure each including the layer having the periodic structure; and bonding a first bonding layer of the first structure and a second bonding layer of the second structure. The first bonding layer is one layer obtained by dividing a layer constituting the three-dimensional photonic crystal at a cross section perpendicular to a lamination direction, and the second bonding layer is the other layer obtained by dividing the layer constituting the three-dimensional photonic crystal at the cross section perpendicular to the lamination direction.

Abstract: A solid-state imaging device capable of making reduction in reflection at the interface between a light guide and an incident unit consistent with improvement in condensing efficiency by the light guide is provided. The solid-state imaging device includes a substrate internally including a photoelectric conversion unit, and a condensing unit provided on an optical incident side of the substrate. A configuration satisfying relationships of |N1|<|??×??| and 0.63<N1/(??/??)<1.58 on an end face of the optical incident side of the condensing unit is adopted. Here, N1 is a refractive index of a medium forming a region of the optical incident side of the condensing unit, and ? is a specific permittivity of a medium forming the condensing unit, and ? is a specific permeability of the medium forming the condensing unit.

Abstract: A photonic crystal surface emitting laser, having an n-type cladding layer formed on a substrate; an active layer formed on the n-type cladding layer; an electron blocking layer formed on the active layer and made of a second p-type semiconductor; and a two-dimensional photonic crystal layer that is formed on the electron blocking layer, includes a plurality of layers that are made of a first p-type semiconductor and have different band gaps, and has a high and a low refractive index portion in an in-plane direction. The band gaps of the plurality of layers are smaller than a band gap of the second p-type semiconductor and decrease stepwise or continuously in a lamination direction of the plurality of layers. A third p-type semiconductor having an acceptor doping concentration smaller than that of the second p-type semiconductor is disposed so as to cover a surface of the electron blocking layer.

Abstract: A surface emitting laser includes a stepped structure having a step between a first region and a second region, the stepped structure provided in an emission area located in an upper portion of the upper mirror. The surface emitting laser includes a light shielding member provided in a third region between the first region and the second region. The light shielding member is not provided in a portion of the first region and a portion of the second region.

Abstract: A solid state image sensor includes a plurality of pixels, each having a photoelectric conversion section formed in the inside of a substrate and a light-receiving section formed on the side of a light-receiving surface of the substrate. At least a part of the plurality of pixels is ranging pixels. The light-receiving section of each of the ranging pixels is equipped with a guided mode resonant filter adapted to reflect incident light getting into the inside of the light-receiving section at a specific incident angle. The normal line of the guided mode resonant filter is inclined relative to the principal ray of the flux of light entering the guided mode resonant filter.

Abstract: A solid-state imaging device capable of making reduction in reflection at the interface between a light guide and an incident unit consistent with improvement in condensing efficiency by the light guide is provided. The solid-state imaging device includes a substrate internally including a photoelectric conversion unit, and a condensing unit provided on an optical incident side of the substrate. A configuration satisfying relationships of |N1|<|??×??| and 0.63<N1/(??/??)<1.58 on an end face of the optical incident side of the condensing unit is adopted. Here, N1 is a refractive index of a medium forming a region of the optical incident side of the condensing unit, and ? is a specific permittivity of a medium forming the condensing unit, and ? is a specific permeability of the medium forming the condensing unit.

Abstract: A method of producing a three-dimensional photonic crystal by laminating a layer having a periodic structure, the method including the steps of forming a first structure and a second structure each including the layer having the periodic structure; and bonding a first bonding layer of the first structure and a second bonding layer of the second structure. The first bonding layer is one layer obtained by dividing a layer constituting the three-dimensional photonic crystal at a cross section perpendicular to a lamination direction, and the second bonding layer is the other layer obtained by dividing the layer constituting the three-dimensional photonic crystal at the cross section perpendicular to the lamination direction.

Abstract: The three-dimensional photonic crystal light emitting device includes a three-dimensional photonic crystal, and a defect forming a resonator in the three-dimensional photonic crystal. In the three-dimensional photonic crystal, an N-cladding layer formed of an N-type semiconductor, an active layer disposed inside the resonator, a P-cladding layer formed of a P-type semiconductor, a tunnel junction layer, and a first N-conductive layer formed of a first N-type conductor are arranged in this order. Electric conductivity of the first N-type conductor is higher than that of the P-type semiconductor. The light emitting device achieves high carrier injection efficiency and a high optical confinement effect.

Abstract: In a light emitting device, efficiency and stability are improved. A light emitting device 10 includes a three-dimensional photonic crystal 20. The three-dimensional photonic crystal includes a first defect part 70 forming a resonator including an active medium, a second defect part 80 forming a waveguide for taking out light generated by the resonator, a P clad part 40 formed of a P-type semiconductor, and a N clad part 50 formed of a first N-type semiconductor. The second defect part is provided only in the N clad part among the P clad part and the N clad part. At least a part of the second defect part is formed of a second N-type semiconductor and constitutes a heat radiation unit which radiates a heat to the outside.

Abstract: At least one exemplary embodiment is directed to a waveguide, which includes a three-dimensional photonic crystal including a first linear defect and a second linear defect. The first linear defect is disposed at part of columnar structures and is formed of a medium different from the columnar structures. The second linear defect is disposed at part of columnar structures extending in the longitudinal direction of the first linear defect and is formed of a medium having a refractive index different from that of the medium used for the columnar structures. The second linear defect is separated from the first linear defect by a distance of at least 0.5 times the out-of-plane lattice period of the three-dimensional photonic crystal in a direction in which layers including the columnar structures are stacked.

Abstract: A three-dimensional photonic crystal includes a structure that includes first, second, third, and fourth layers in this order. The structure of each layer includes a flat surface as one end surface, and first, second, and third structural portions. The first structural portion has a first width along the flat surface and a first height from the flat surface. The second structural portion has a second width larger than the first width and a second height larger than the first height. The third structural portion has a width and a height that continuously or stepwise change in the extending direction of the structure. The flat surface at the structural portion of one of two adjacent layers in the first layer to the fourth layer contacts a surface opposite to the flat surface at the second structural portion of the other of the two adjacent layers.

Abstract: In a light emitting device, efficiency and stability are improved. A light emitting device 10 includes a three-dimensional photonic crystal 20. The three-dimensional photonic crystal includes a first defect part 70 forming a resonator including an active medium, a second defect part 80 forming a waveguide for taking out light generated by the resonator, a P clad part 40 formed of a P-type semiconductor, and a N clad part 50 formed of a first N-type semiconductor. The second defect part is provided only in the N clad part among the P clad part and the N clad part. At least a part of the second defect part is formed of a second N-type semiconductor and constitutes a heat radiation unit which radiates a heat to the outside.

Abstract: A waveguide based on a three-dimensional photonic crystal is arranged to provide wave-guiding in a single mode and a mode having a field strength distribution with unimodality in a plane perpendicular to the wave-guiding direction, to thereby enable wave-guiding in a desired frequency band, wherein the three-dimensional photonic crystal has a plurality of line defect members which include a first line defect member made of a medium having a refractive index not smaller than that of the columnar structures and formed in a direction perpendicular to the direction in which the columnar structures extend, and a second line defect member formed in the same direction as the first line defect member.

Abstract: The three-dimensional photonic crystal light emitting device includes a three-dimensional photonic crystal, and a defect forming a resonator in the three-dimensional photonic crystal. In the three-dimensional photonic crystal, an N-cladding layer formed of an N-type semiconductor, an active layer disposed inside the resonator, a P-cladding layer formed of a P-type semiconductor, a tunnel junction layer, and a first N-conductive layer formed of a first N-type conductor are arranged in this order. Electric conductivity of the first N-type conductor is higher than that of the P-type semiconductor. The light emitting device achieves high carrier injection efficiency and a high optical confinement effect.

Abstract: A three-dimensional photonic crystal includes a structure that includes first, second, third, and fourth layers in this order. The structure of each layer includes a flat surface as one end surface, and first, second, and third structural portions. The first structural portion has a first width along the flat surface and a first height from the flat surface. The second structural portion has a second width larger than the first width and a second height larger than the first height. The third structural portion has a width and a height that continuously or stepwise change in the extending direction of the structure. The flat surface at the structural portion of one of two adjacent layers in the first layer to the fourth layer contacts a surface opposite to the flat surface at the second structural portion of the other of the two adjacent layers.

Abstract: A waveguide based on a three-dimensional photonic crystal is arranged to provide wave-guiding in a single mode and a mode having a field strength distribution with unimodality in a plane perpendicular to the wave-guiding direction, to thereby enable wave-guiding in a desired frequency band, wherein the three-dimensional photonic crystal has a plurality of line defect members which include a first line defect member made of a medium having a refractive index not smaller than that of the columnar structures and formed in a direction perpendicular to the direction in which the columnar structures extend, and a second line defect member formed in the same direction as the first line defect member.