Patents by Inventor Akihiro HANADA

Akihiro HANADA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220029026
    Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.
    Type: Application
    Filed: October 13, 2021
    Publication date: January 27, 2022
    Applicant: Japan Display Inc.
    Inventors: Hajime WATAKABE, Tomoyuki ITO, Toshihide JINNAI, lsao SUZUMURA, Akihiro HANADA, Ryo ONODERA
  • Publication number: 20210405411
    Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.
    Type: Application
    Filed: September 10, 2021
    Publication date: December 30, 2021
    Applicant: Japan Display Inc.
    Inventors: Akihiro HANADA, Toshihide JINNAI, Isao SUZUMURA, Hajime WATAKABE, Ryo ONODERA
  • Publication number: 20210391359
    Abstract: A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.
    Type: Application
    Filed: August 27, 2021
    Publication date: December 16, 2021
    Inventors: Hajime WATAKABE, Isao SUZUMURA, Akihiro HANADA, Yohei YAMAGUCHI
  • Patent number: 11181792
    Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: November 23, 2021
    Assignee: JAPAN DISPLAY INC.
    Inventors: Toshihide Jinnai, Hajime Watakabe, Akihiro Hanada, Ryo Onodera, Isao Suzumura
  • Patent number: 11177388
    Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.
    Type: Grant
    Filed: February 10, 2020
    Date of Patent: November 16, 2021
    Assignee: JAPAN DISPLAY INC.
    Inventors: Hajime Watakabe, Tomoyuki Ito, Toshihide Jinnai, Isao Suzumura, Akihiro Hanada, Ryo Onodera
  • Publication number: 20210320158
    Abstract: The purpose of the present invention is to increase ON current of the oxide semiconductor thin film transistor. An example of the structure that attains the purpose is: a display device having a substrate and a thin film transistor of an oxide semiconductor formed on the substrate including: a thickness of a source region and a drain region is thicker than a thickness of a channel region of the oxide semiconductor, the channel region has projections at portions contacting the source region and the drain region, a thickness of the projection is thicker than a thickness of the center of the channel region, and a thickness of the projection is thicker than a thickness of the source region and the drain region.
    Type: Application
    Filed: June 23, 2021
    Publication date: October 14, 2021
    Applicant: Japan Display Inc.
    Inventors: Akihiro HANADA, Toshihide JINNAI, Isao SUZUMURA, Hajime WATAKABE, Ryo ONODERA
  • Patent number: 11133337
    Abstract: A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.
    Type: Grant
    Filed: April 20, 2020
    Date of Patent: September 28, 2021
    Assignee: Japan Display Inc.
    Inventors: Hajime Watakabe, Isao Suzumura, Akihiro Hanada, Yohei Yamaguchi
  • Publication number: 20210257402
    Abstract: The present invention provides a technology which realizes a reliable semiconductor device including a photosensor device by preventing pent roofs of edges of a P+ layer from being generated and a metal wiring installed over the P+ layer from coming down while securing the electrical conductivity of the P+ layer. The semiconductor device includes a photosensor including a photodiode formed on a substrate. The photodiode includes: a cathode electrode; a laminated structure that is formed on the cathode electrode and in which an N+ layer, an I layer, and a P+ layer are laminated in this order; an anode electrode formed on the P+ layer; a first insulating film formed so as to cover a portion of the anode electrode and edges of the laminated structure; and a metal wiring connected to the anode electrode. The edges of the laminated structure are formed in forward tapered shapes in a cross-sectional view.
    Type: Application
    Filed: February 4, 2021
    Publication date: August 19, 2021
    Applicant: Japan Display Inc.
    Inventors: Hajime WATAKABE, Akihiro HANADA, Marina MOCHIZUKI, Ryo ONODERA, Fumiya KIMURA, Isao SUZUMURA
  • Publication number: 20210240042
    Abstract: A high definition display device is provided. The display device includes an array substrate, and an opposing substrate. The array substrate has a substrate, and on the substrate, a first pixel having a first color filter and a second pixel having a second color filter disposed adjacent to the first pixel. Each of the first color filter and the second color filter has a first dielectric layer, a transmissive layer disposed on the first dielectric layer, and a second dielectric layer disposed on the transmissive layer. The transmissive layer of the first color filter has a first film thickness, and the transmissive layer of the second color filter has a second film thickness larger than the first film thickness. On the transmissive layer of the second color filter, a first layer different from the transmissive layer is disposed on a side of the transmissive layer of the first color filter. A height of a bottom face of the first layer is equal to the first film thickness.
    Type: Application
    Filed: January 27, 2021
    Publication date: August 5, 2021
    Applicant: Japan Display Inc.
    Inventors: Ryo ONODERA, Hajime WATAKABE, Akihiro HANADA
  • Patent number: 11003003
    Abstract: The purpose of the invention is to realize the flexible display device of high reliability; specifically in a structure that a bending area is in a terminal area, and in that disconnection of the wiring does not occur in the bending area. The concrete structure is that: a display device having a display area, a driving circuit area and a bending area comprising: a first thin film transistor and a first interlayer insulating film are formed in the display area, a second thin film transistor and a second interlayer insulating film are formed in the driving circuit area, terminal wirings to connects the display area and the driving circuit area are formed in the bending area.
    Type: Grant
    Filed: July 1, 2020
    Date of Patent: May 11, 2021
    Assignee: Japan Display Inc.
    Inventors: Akihiro Hanada, Isao Suzumura, Hajime Watakabe
  • Publication number: 20210134848
    Abstract: An object of the present invention is to provide a technology using which, in a thin film transistor using oxide semiconductor, the resistance of a channel region of the oxide semiconductor is made high, and at the same time the resistances of a source region and a drain region of the oxide semiconductor are made low. There is provided a semiconductor device including: a thin film transistor including oxide semiconductor, the oxide semiconductor including a channel region, a drain region, and a source region; a gate insulating film formed on the channel region; an aluminum oxide film formed on the gate insulating film; and a gate electrode formed on the aluminum oxide film, wherein the aluminum oxide film has a region that covers neither the drain region nor the source region in a plane view.
    Type: Application
    Filed: January 14, 2021
    Publication date: May 6, 2021
    Applicant: Japan Display Inc.
    Inventors: Akihiro HANADA, Toshihide JINNAI
  • Publication number: 20210074736
    Abstract: The purpose of the present invention is to prevent the TFT in the semiconductor device is shorted by existence of a foreign substance. An example of the structure to solve the problem is: A semiconductor device comprising: a scan line extends in a first direction, a first signal line extends in a second direction, which crosses the first direction, a second signal line extends parallel to the first signal line, an electrode is disposed between the first signal line and the second signal line, wherein a first TFT connects with the second signal line in a vicinity of the second signal line, a second TFT connects with the electrode in a vicinity of the first signal line, the first TFT and the second TFT are formed from oxide semiconductors, the first TFT and the second TFT are connected in series.
    Type: Application
    Filed: August 19, 2020
    Publication date: March 11, 2021
    Applicant: Japan Display Inc.
    Inventors: Akihiro HANADA, Toshihide JINNAI, Hajime WATAKABE, Ryo ONODERA
  • Publication number: 20210066351
    Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.
    Type: Application
    Filed: August 6, 2020
    Publication date: March 4, 2021
    Inventors: Hajime WATAKABE, Toshihide JINNAI, Ryo ONODERA, Akihiro HANADA
  • Publication number: 20210011536
    Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.
    Type: Application
    Filed: September 28, 2020
    Publication date: January 14, 2021
    Applicant: Japan Display Inc.
    Inventors: Akihiro HANADA, Hajime WATAKABE, Kazufumi WATABE
  • Publication number: 20200350341
    Abstract: The purpose of the present invention is to realize the display device having thin film transistors of the oxide semiconductor of stable characteristics. An example of the concrete structure is that: A display device having a substrate including a display area, plural pixels formed in the display area, the pixel includes a first thin film transistor having an oxide semiconductor film, a first insulating film made of a first silicon oxide on a first side of the oxide semiconductor film, a second insulating film made of a second silicon oxide on a second side of the oxide semiconductor film, wherein oxygen desorption amount per unit area from the first insulating film is larger than that from the second insulating film, when measured by TDS (Thermal Desorption Spectrometry) provided M/z=32 and a measuring range in temperature is from 100 centigrade to 500 centigrade.
    Type: Application
    Filed: July 17, 2020
    Publication date: November 5, 2020
    Applicant: Japan Display Inc.
    Inventors: Akihiro HANADA, Yohei YAMAGUCHI, Hirokazu WATANABE, Isao SUZUMURA
  • Patent number: 10824211
    Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: November 3, 2020
    Assignee: Japan Display Inc.
    Inventors: Akihiro Hanada, Hajime Watakabe, Kazufumi Watabe
  • Publication number: 20200333652
    Abstract: The purpose of the invention is to realize the flexible display device of high reliability; specifically in a structure that a bending area is in a terminal area, and in that disconnection of the wiring does not occur in the bending area. The concrete structure is that: a display device having a display area, a driving circuit area and a bending area comprising: a first thin film transistor and a first interlayer insulating film are formed in the display area, a second thin film transistor and a second interlayer insulating film are formed in the driving circuit area, terminal wirings to connects the display area and the driving circuit area are formed in the bending area.
    Type: Application
    Filed: July 1, 2020
    Publication date: October 22, 2020
    Applicant: Japan Display Inc.
    Inventors: Akihiro HANADA, Isao SUZUMURA, Hajime WATAKABE
  • Publication number: 20200326571
    Abstract: The purpose of the present invention is to suppress the change in characteristics of the TFT formed on the polyimide substrate. An example of the present invention is a display device having a first TFT of an oxide semiconductor film and a second TFT of a polysilicon film formed on the substrate made of resin including the first TFT and the second TFT do not overlap in a plan view, a distance between the second TFT and the substrate is shorter than a distance between the first TFT and the substrate in a cross sectional view, a second polysilicon film is formed between the oxide semiconductor film and the substrate, the second polysilicon film is made of the same material as the first polysilicon film and is formed on the same layer that the first polysilicon is formed.
    Type: Application
    Filed: June 25, 2020
    Publication date: October 15, 2020
    Inventors: Akihiro HANADA, Tomoyuki ITO
  • Publication number: 20200321359
    Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer located above the insulating substrate, a second semiconductor layer located above the insulating substrate, an insulating layer which covers the first semiconductor layer and the second semiconductor layer, and includes a first contact hole reaching the first semiconductor layer and a second contact hole reaching the second semiconductor layer, a barrier layer which covers one of the first semiconductor layer inside the first contact hole and the second semiconductor layer inside the second contact hole, and a first conductive layer which is in contact with the barrier layer.
    Type: Application
    Filed: June 19, 2020
    Publication date: October 8, 2020
    Applicant: Japan Display Inc.
    Inventors: Akihiro HANADA, Masayoshi Fuchi
  • Patent number: 10761354
    Abstract: The purpose of the invention is to realize the flexible display device of high reliability; specifically in a structure that a bending area is in a terminal area, and in that disconnection of the wiring does not occur in the bending area. The concrete structure is that: a display device having a display area, a driving circuit area and a bending area comprising: a first thin film transistor and a first interlayer insulating film are formed in the display area, a second thin film transistor and a second interlayer insulating film are formed in the driving circuit area, terminal wirings to connects the display area and the driving circuit area are formed in the bending area.
    Type: Grant
    Filed: October 8, 2018
    Date of Patent: September 1, 2020
    Assignee: Japan Display Inc.
    Inventors: Akihiro Hanada, Isao Suzumura, Hajime Watakabe