Patents by Inventor Akihiro HANADA
Akihiro HANADA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200251505Abstract: A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.Type: ApplicationFiled: April 20, 2020Publication date: August 6, 2020Inventors: Hajime WATAKABE, Isao SUZUMURA, Akihiro HANADA, Yohei YAMAGUCHI
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Patent number: 10727254Abstract: A semiconductor device includes a oxide semiconductor layer, a gate electrode arranged above the oxide semiconductor layer, a gate insulation layer between the oxide semiconductor layer and the gate electrode, a first insulation layer arranged above the oxide semiconductor layer and arranged with a first aperture part, wiring including an aluminum layer arranged above the first insulation layer, the wiring being electrically connected to the oxide semiconductor layer via the first aperture part, a barrier layer including aluminum oxide above the first insulation layer, above the wiring and covering a side surface of the wiring, and an organic insulation layer arranged above the barrier layer.Type: GrantFiled: June 20, 2019Date of Patent: July 28, 2020Assignee: Japan Display Inc.Inventors: Toshinari Sasaki, Hajime Watakabe, Akihiro Hanada, Marina Shiokawa
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Patent number: 10707242Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer located above the insulating substrate, a second semiconductor layer located above the insulating substrate, an insulating layer which covers the first semiconductor layer and the second semiconductor layer, and includes a first contact hole reaching the first semiconductor layer and a second contact hole reaching the second semiconductor layer, a barrier layer which covers one of the first semiconductor layer inside the first contact hole and the second semiconductor layer inside the second contact hole, and a first conductive layer which is in contact with the barrier layer.Type: GrantFiled: November 26, 2018Date of Patent: July 7, 2020Assignee: Japan Display Inc.Inventors: Akihiro Hanada, Masayoshi Fuchi
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Patent number: 10580801Abstract: The purpose of the invention is to form a flexible display device where the substrate is made of resin, wherein the TFT can be annealed in high temperature; consequently, a reliability of the TFT is improved. The concrete measure is as follows. A display device having a pixel electrode and a TFT including a semiconductor layer on a substrate comprising: a source region of the semiconductor layer connects with a source electrode, a drain region of the semiconductor layer connects with a drain electrode; the pixel electrode connects with the source electrode; the drain electrode connects with a video signal line; a distance between the drain electrode and the substrate is smaller than a distance between the semiconductor and the substrate, the semiconductor layer is formed between the pixel electrode and the substrate.Type: GrantFiled: May 14, 2018Date of Patent: March 3, 2020Assignee: Japan Display Inc.Inventors: Isao Suzumura, Hajime Watakabe, Akihiro Hanada, Hirokazu Watanabe, Yohei Yamaguchi, Marina Shiokawa, Ryotaro Kimura
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Patent number: 10459304Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.Type: GrantFiled: April 26, 2019Date of Patent: October 29, 2019Assignee: Japan Display Inc.Inventors: Hajime Watakabe, Isao Suzumura, Hirokazu Watanabe, Akihiro Hanada
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Publication number: 20190312064Abstract: A semiconductor device includes a oxide semiconductor layer, a gate electrode arranged above the oxide semiconductor layer, a gate insulation layer between the oxide semiconductor layer and the gate electrode, a first insulation layer arranged above the oxide semiconductor layer and arranged with a first aperture part, wiring including an aluminum layer arranged above the first insulation layer, the wiring being electrically connected to the oxide semiconductor layer via the first aperture part, a barrier layer including aluminum oxide above the first insulation layer, above the wiring and covering a side surface of the wiring, and an organic insulation layer arranged above the barrier layer.Type: ApplicationFiled: June 20, 2019Publication date: October 10, 2019Inventors: Toshinari SASAKI, Hajime Watakabe, Akihiro Hanada, Marina Shiokawa
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Patent number: 10439010Abstract: The purpose of the present invention is to form both LTPS TFT and semiconductor TFT in a same substrate. The feature of the display device to realize the above purpose is that: a display device having a display area containing a pixel comprising: the pixel includes a first TFT having an oxide semiconductor, a gate insulating film is formed on the oxide semiconductor, a first gate electrode is formed on the gate insulating film, a first source/drain electrode formed by a metal or an alloy contacts a source or a drain of the semiconductor the first gate electrode and the first source/drain electrode are formed by the same material.Type: GrantFiled: August 25, 2017Date of Patent: October 8, 2019Assignee: Japan Display Inc.Inventor: Akihiro Hanada
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Publication number: 20190250443Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.Type: ApplicationFiled: April 26, 2019Publication date: August 15, 2019Inventors: Hajime WATAKABE, Isao SUZUMURA, Hirokazu WATANABE, Akihiro HANADA
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Publication number: 20190244979Abstract: A display device to improve reliability of the TFT of the oxide semiconductor, including: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor; a first gate insulating film is formed on the first oxide semiconductor, a gate electrode is formed on the first gate insulating film, an interlayer insulating film is formed over the gate electrode; the gate insulating film includes a first silicon oxide film, the gate electrode includes a first gate layer made of a second oxide semiconductor and a second gate layer made of metal or alloy; the interlayer insulating film has a first interlayer insulating film including a second silicon oxide film, and a second interlayer insulating film including a first aluminum oxide film on the first interlayer insulating film.Type: ApplicationFiled: April 18, 2019Publication date: August 8, 2019Applicant: Japan Display Inc.Inventors: Isao SUZUMURA, Yohei YAMAGUCHI, Hajime WATAKABE, Akihiro HANADA, Hirokazu WATANABE, Marina SHIOKAWA
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Patent number: 10373982Abstract: A semiconductor device includes a oxide semiconductor layer, a gate electrode arranged above the oxide semiconductor layer, a gate insulation layer between the oxide semiconductor layer and the gate electrode, a first insulation layer arranged above the oxide semiconductor layer and arranged with a first aperture part, wiring including an aluminum layer arranged above the first insulation layer, the wiring being electrically connected to the oxide semiconductor layer via the first aperture part, a barrier layer including aluminum oxide above the first insulation layer, above the wiring and covering a side surface of the wiring, and an organic insulation layer arranged above the barrier layer.Type: GrantFiled: June 12, 2017Date of Patent: August 6, 2019Assignee: Japan Display Inc.Inventors: Toshinari Sasaki, Hajime Watakabe, Akihiro Hanada, Marina Shiokawa
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Patent number: 10317763Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a source/drain electrode of the first TFT connects with the silicon (Si) via a first through hole, a source/drain electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an AlO layer is formed on the metal films and the oxide semiconductor, the second source/drain electrode and the metal films are connected via the second through hole formed in the AlO layer.Type: GrantFiled: October 3, 2017Date of Patent: June 11, 2019Assignee: Japan Display Inc.Inventors: Hajime Watakabe, Isao Suzumura, Hirokazu Watanabe, Akihiro Hanada
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Publication number: 20190129227Abstract: The purpose of the invention is to realize the flexible display device of high reliability; specifically in a structure that a bending area is in a terminal area, and in that disconnection of the wiring does not occur in the bending area. The concrete structure is that: a display device having a display area, a driving circuit area and a bending area comprising: a first thin film transistor and a first interlayer insulating film are formed in the display area, a second thin film transistor and a second interlayer insulating film are formed in the driving circuit area, terminal wirings to connects the display area and the driving circuit area are formed in the bending area.Type: ApplicationFiled: October 8, 2018Publication date: May 2, 2019Applicant: Japan Display Inc.Inventors: Akihiro HANADA, Isao SUZUMURA, Hajime WATAKABE
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Publication number: 20190096915Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer located above the insulating substrate, a second semiconductor layer located above the insulating substrate, an insulating layer which covers the first semiconductor layer and the second semiconductor layer, and includes a first contact hole reaching the first semiconductor layer and a second contact hole reaching the second semiconductor layer, a barrier layer which covers one of the first semiconductor layer inside the first contact hole and the second semiconductor layer inside the second contact hole, and a first conductive layer which is in contact with the barrier layer.Type: ApplicationFiled: November 26, 2018Publication date: March 28, 2019Applicant: Japan Display Inc.Inventors: Akihiro HANADA, Masayoshi FUCHI
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Patent number: 10211235Abstract: The purpose of the present invention is to form both LTPS TFT and Ply-Si TFT on a same substrate. The feature of the display device to realize the above purpose is that: a display device comprising: a substrate including a first TFT having an oxide semiconductor layer and a second TFT having a Poly-Si layer, an undercoat is formed on the substrate, the oxide semiconductor layer is formed on or above the undercoat, a first interlayer insulating film is formed on or above the oxide semiconductor layer, the Poly-Si layer is formed on or above the first interlayer insulating film.Type: GrantFiled: August 16, 2017Date of Patent: February 19, 2019Assignee: Japan Display Inc.Inventors: Isao Suzumura, Hajime Watakabe, Akihiro Hanada, Hirokazu Watanabe
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Publication number: 20190041932Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.Type: ApplicationFiled: September 14, 2018Publication date: February 7, 2019Applicant: Japan Display Inc.Inventors: Akihiro HANADA, Hajime Watakabe, Kazufumi Watabe
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Patent number: 10177174Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer located above the insulating substrate, a second semiconductor layer located above the insulating substrate, an insulating layer which covers the first semiconductor layer and the second semiconductor layer, and includes a first contact hole reaching the first semiconductor layer and a second contact hole reaching the second semiconductor layer, a barrier layer which covers one of the first semiconductor layer inside the first contact hole and the second semiconductor layer inside the second contact hole, and a first conductive layer which is in contact with the barrier layer.Type: GrantFiled: June 8, 2017Date of Patent: January 8, 2019Assignee: Japan Display Inc.Inventors: Akihiro Hanada, Masayoshi Fuchi
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Publication number: 20180342536Abstract: The purpose of the invention is to form a flexible display device where the substrate is made of resin, wherein the TFT can be annealed in high temperature; consequently, a reliability of the TFT is improved. The concrete measure is as follows. A display device having a pixel electrode and a TFT including a semiconductor layer on a substrate comprising: a source region of the semiconductor layer connects with a source electrode, a drain region of the semiconductor layer connects with a drain electrode; the pixel electrode connects with the source electrode; the drain electrode connects with a video signal line; a distance between the drain electrode and the substrate is smaller than a distance between the semiconductor and the substrate, the semiconductor layer is formed between the pixel electrode and the substrate.Type: ApplicationFiled: May 14, 2018Publication date: November 29, 2018Applicant: Japan Display Inc.Inventors: Isao Suzumura, Hajime Watakabe, Akihiro Hanada, Hirokazu Watanabe, Yohei Yamaguchi, Marina Shiokawa, Ryotaro Kimura
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Patent number: 10115740Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.Type: GrantFiled: January 13, 2017Date of Patent: October 30, 2018Assignee: Japan Display Inc.Inventors: Akihiro Hanada, Hajime Watakabe, Kazufumi Watabe
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Publication number: 20180286890Abstract: The purpose of the invention is to improve reliability of the TFT of the oxide semiconductor. The invention is characterized as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor; a first gate insulating film is formed on the first oxide semiconductor, a gate electrode is formed on the first gate insulating film, an interlayer insulating film is formed over the gate electrode; the gate insulating film includes a first silicon oxide film, the gate electrode includes a first gate layer made of a second oxide semiconductor and a second gate layer made of metal or alloy; the interlayer insulating film has a first interlayer insulating film including a second silicon oxide film, and a second interlayer insulating film including a first aluminum oxide film on the first interlayer insulating film.Type: ApplicationFiled: March 16, 2018Publication date: October 4, 2018Applicant: Japan Display Inc.Inventors: Isao Suzumura, Yohei Yamaguchi, Hajime Watakabe, Akihiro Hanada, Hirokazu Watanabe, Marina Shiokawa
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Publication number: 20180122835Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.Type: ApplicationFiled: October 3, 2017Publication date: May 3, 2018Inventors: Hajime WATAKABE, Isao SUZUMURA, Hirokazu WATANABE, Akihiro HANADA