Abstract: A manufacturing method of a photoelectric conversion device module, wherein an insulating layer and a first electrode are formed over a base substrate; a plurality of single-crystal semiconductor substrates having a first conductivity type including embrittlement layers formed inside are attached; the plurality of single-crystal semiconductor substrates are separated at the embrittlement layers so that a plurality of stacked bodies including the insulating layer, the first electrode and a first single-crystal semiconductor layer is formed; a second single-crystal semiconductor layer is formed over the stacked bodies to form a first photoelectric conversion layer; a second photoelectric conversion layer including a non-single-crystal semiconductor layer is formed; a second electrode is formed; and selective etching is conducted to form photoelectric conversion cells which are element-separated, and a connecting electrode is formed to connect the second electrode of one photoelectric conversion cell and the fir

Abstract: A method of manufacturing a sealed structure with excellent hermeticity and a method of manufacturing a light-emitting device sealed with the sealed structure. In the methods of manufacturing a sealed structure and a light-emitting device using a glass frit layer, a first step of forming a buffer layer for preventing a crack generated in a substrate and the glass frit layer by laser light irradiation, a second step of forming the glass frit layer to overlap with the buffer layer over the substrate, and a third step of welding the substrates by irradiating the glass frit layer or the buffer layer with laser light are performed, whereby a sealed structure with high hermeticity and a reliable light-emitting device sealed with the sealed structure can be manufactured. By applying the method of manufacturing a light-emitting device especially to an organic EL element, a highly reliable light-emitting device can be obtained.

Abstract: A highly productive method for sealing substrates with the use of glass frit is provided. A method for sealing substrates with the use of glass frit, which can be used for a substrate provided with a material having low heat resistance, is provided. A highly airtight sealed body which is manufactured by such a method is provided. A light-emitting device having high productivity and high reliability and a manufacturing method thereof are provided. A heat generation layer containing a conductive material which generates heat by induction heating is formed to overlap with a region where a paste including a frit material and a binder is applied. Alternatively, a conductive material which generates heat by induction heating is added to the paste itself. The paste is locally heated by induction heating to remove the binder included in the paste.

Abstract: An SOI substrate having a single crystal semiconductor layer the surface of which has high planarity is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged region containing a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated to separate the single crystal semiconductor substrate in the damaged region. While a heated high-purity nitrogen gas is sprayed on a separation surface of a single crystal semiconductor layer which is separated from the single crystal semiconductor substrate and irradiation with a microwave is performed from the back side of the supporting substrate, the separation surface is irradiated with a laser beam. The single crystal semiconductor layer is melted by irradiation with the laser beam, so that the surface of the single crystal semiconductor layer is planarized and re-single-crystallization thereof is performed.

Abstract: It is an object to provide a method for manufacturing an SOI substrate in which reduction in yield can be suppressed while impurity diffusion into a semiconductor film is suppressed. A semiconductor substrate provided with an oxide film is formed by thermally oxidizing the surface of the semiconductor substrate. Plasma is generated under an atmosphere of a gas containing nitrogen atoms and plasma nitridation is performed on part of the oxide film, so that a semiconductor substrate in which an insulating film containing nitrogen atoms is formed over the oxide film is obtained. After bonding the insulating film containing nitrogen atoms and a glass substrate to each other, the semiconductor substrate is split, whereby an SOI substrate in which the insulating film containing nitrogen atoms, the oxide film, a thin semiconductor film are stacked in this order is formed.

Abstract: A first embrittlement layer is formed by doping a first single-crystal semiconductor substrate with a first ion; a second embrittlement layer is formed by doping a second single-crystal semiconductor substrate with a second ion; the first and second single-crystal semiconductor substrates are bonded to each other; the first single-crystal semiconductor film is formed over the second single-crystal semiconductor substrate by a first heat treatment; an insulating substrate is bonded over the first single-crystal semiconductor film; and the first and second single-crystal semiconductor films are formed over the insulating substrate by a second heat treatment. A dose of the first ion is higher than that of the second ion and a temperature of the first heat treatment is lower than that of the second heat treatment.

Abstract: An object is to provide a method for manufacturing a light-emitting device including a flexible substrate, in which separation is performed without separation at the interface between the light-emitting layer and the electrode. A spacer formed of a light absorbing material which absorbs laser light is formed over a partition of one of substrates, a coloring layer is formed over the other substrate, and the substrates are bonded to each other with the use of a bonding layer. The light-emitting layer and the electrode which are formed over the spacer are irradiated with laser light through the coloring layer, so that at least the bonding layer among the light-emitting layer, the electrode, the coloring layer, and the bonding layer is melted to form a fixed portion where the bonding layer and the spacer are bonded by welding.

Abstract: To provide an electroluminescent device in which an element substrate provided with a light-emitting element and a sealing substrate are bonded to each other without causing thermal damage to the light-emitting element and which is formed using an electroluminescent material. A sheet 108 in which layers of at least two different kinds of metals are stacked is formed in a peripheral portion of one or both of the element substrate 102 provided with an EL element 104 and a sealing substrate 106 bonded to the element substrate 102 so as to face each other. Further, the sheet is irradiated with a focused beam, and the irradiation portion of the sheet is heated, whereby at least two kinds of metals are alloyed, and the element substrate and the sealing substrate are bonded to each other by heat generated in the alloying.

Abstract: A manufacturing method of a semiconductor device in which a space between semiconductor films transferred to a plurality of places can be made small. Transfer of a semiconductor film from a bond substrate to a base substrate is carried out a plurality of times. In the case where a semiconductor film transferred first and a semiconductor film transferred later are provided adjacently, the latter transfer is carried out using a bond substrate with its end portion partially removed. The width in a perpendicular direction to the bond substrate used for the later transfer, of the region of the bond substrate corresponding to the removed end portion is larger than the thickness of the semiconductor film which is transferred first.

Abstract: A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10?7/° C. and less than or equal to 38×10?7/° C. The heated layer including the semiconductor film is irradiated with a pulsed ultraviolet laser beam having a width of less than or equal to 100 ?m, a ratio of width to length of 1:500 or more, and a full width at half maximum of the laser beam profile of less than or equal to 50 ?m, so that a crystalline semiconductor film is formed. As the layer including the semiconductor film formed over the glass substrate, a layer whose total stress after heating is ?500 N/m to +50 N/m, inclusive is formed.

Abstract: To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOL substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.

Abstract: Defects in a semiconductor substrate are reduced. A semiconductor substrate with fewer defects is manufactured with high yield. Further, a semiconductor device is manufactured with high yield. A semiconductor layer is formed over a supporting substrate with an oxide insulating layer interposed therebetween, adhesiveness between the supporting substrate and the oxide insulating layer in an edge portion of the semiconductor layer is increased, an insulating layer over a surface of the semiconductor layer is removed, and the semiconductor layer is irradiated with laser light, so that a planarized semiconductor layer is obtained. For increasing the adhesiveness between the supporting substrate and the oxide insulating layer in the edge portion of the semiconductor layer, laser light irradiation is performed from the surface of the semiconductor layer.

Abstract: The present invention provides a laser oscillator using an electroluminescent material that can enhance directivity of emitted laser light and resistance to a physical impact. The laser oscillator has a first layer including a concave portion, a second layer formed over the first layer to cover the concave portion, and a light emitting element formed over the second layer to overlap the concave portion, wherein the second layer is planarized, an axis of laser light obtained from the light emitting element intersects with a planarized surface of the second layer, the first layer has a curved surface in the concave portion, and a refractive index of the first layer is lower than that of the second layer.

Abstract: It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10?7/° C. to 38×10?7/° C., preferably 6×10?7/° C. to 31.8×10?7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is ?500 N/m to +50 N/m, preferably ?150 N/m to 0 N/m after the heating step.

Abstract: To suppress an effect of metal contamination caused in manufacturing an SOI substrate. After forming a damaged region by irradiating a semiconductor substrate with hydrogen ions, the semiconductor substrate is bonded to a base substrate. Heat treatment is performed to cleave the semiconductor substrate; thus an SOI substrate is manufactured. Even if metal ions enter the semiconductor substrate together with the hydrogen ions in the step of hydrogen ion irradiation, the effect of metal contamination can be suppressed by the gettering process. Accordingly, the irradiation with hydrogen ions can be performed positively by an ion doping method.

Abstract: The present invention is a semiconductor manufacturing apparatus by which an impurity can be introduced into an active layer at a low and a stable concentration in order to form semiconductor elements that have little variation in threshold voltage. In the semiconductor manufacturing apparatus that includes a washing unit; an impurity introduction unit used to attach the impurity to the surface of the semiconductor film; a laser crystallization unit used to crystallize the semiconductor film to which an impurity has been attached; and transfer robots, the amount of the impurity attached to the semiconductor film is controlled by the length of time of exposure of the substrate in the impurity introduction unit, and the semiconductor film is crystallized while a crystalline semiconductor film that contains an impurity at low concentration is formed simultaneously by laser crystallization.

Abstract: A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10?7/° C. and less than or equal to 38×10?7/° C. The heated layer including the semiconductor film is irradiated with a pulsed ultraviolet laser beam having a width of less than or equal to 100 ?m, a ratio of width to length of 1:500 or more, and a full width at half maximum of the laser beam profile of less than or equal to 50 ?m, so that a crystalline semiconductor film is formed. As the layer including the semiconductor film formed over the glass substrate, a layer whose total stress after heating is ?500 N/m to +50 N/m, inclusive is formed.

Abstract: To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.

Abstract: Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor la

Abstract: The present invention provides a laser oscillator using an electroluminescent material that can enhance directivity of emitted laser light and resistance to a physical impact. The laser oscillator has a first layer including a concave portion, a second layer formed over the first layer to cover the concave portion, and a light emitting element formed over the second layer to overlap the concave portion, wherein the second layer is planarized, an axis of laser light obtained from the light emitting element intersects with a planarized surface of the second layer, the first layer has a curved surface in the concave portion, and a refractive index of the first layer is lower than that of the second layer.