Abstract: A bonding material includes: a single particle that is a particle of a first metal; a composite particle including a central core that is a particle of the first metal, and at least one coating layer covering an entire surface of the central core, the at least one coating layer including a fine particle of a second metal; and a flux including a reducing agent component, in which the first metal and the second metal have properties of forming an intermetallic compound of the first metal and the second metal, and the reducing agent component of the flux is present between the central core and the at least one coating layer.

Abstract: A bonding material includes a solder alloy having a median diameter D50 of 100 nm to 2000 nm, made from Sn, Bi, In, and other unavoidable components, and having a melting point of less than or equal to 100° C., metal nanoparticles that are Cu nanoparticles having a median diameter D50 of 50 nm to 500 nm, and a flux, wherein the metal nanoparticles include a protective film on a surface of the metal nanoparticles, the protective film separating at a temperature higher than a melting point of the solder alloy and lower than 100° C., and a weight ratio between the solder alloy and the metal nanoparticles is a ratio at which all Sn and In contained in the solder alloy become intermetallic compounds with the metal nanoparticles in an equilibrium state diagram.

Abstract: There is provided a bonding material which forms a bonding portion between two objects, which material contains (1) first metal particles comprising a first metal and having a median particle diameter in the range of 20 nm to 1 ?m, and (2) second metal particles comprising, as a second metal, at least one alloy of Sn and at least one selected from Bi, In and Zn and having a melting point of not higher than 200° C.

Abstract: A mounting structure is used, which includes: a semiconductor element including an element electrode; a metal member; and a sintered body configured to bond the semiconductor element and the metal member is used, in which the sintered body contains a first metal and a second metal solid-dissolved in the first metal, the second metal is a metal having a diffusion coefficient in the first metal larger than a self-diffusion coefficient of the first metal, and a content ratio of the second metal relative to a total mass of the first metal and the second metal in the sintered body is equal to or lower than a solid solution limit of the second metal to the first metal.

Abstract: A jointing material includes: at least one type of element at 0.1 wt % to 30 wt %, the element being capable of forming a compound with each of tin and carbon; and tin at 70 wt % to 99.9 wt % as a main component.

Abstract: To provide a method for efficiently producing metal microparticles having a particle diameter of 1 ?m to 10 ?m, and a device for producing the same. A metal microparticle production method is used, which includes a particle generating step of generating primary particles by irradiating a metal lump in a solvent in a first tank with an ultrasonic wave, and a particle splitting step of irradiating the primary particles with an ultrasonic wave in a solvent in a second tank and splitting the primary particles to produce secondary particles.

Abstract: A solder alloy, includes: about 3 wt % to about 15 wt % of Sb; about 0.01 wt % to about 1.5 wt % of Te; and about 0.005 wt % to about 1 wt % of at least one element selected from the group consisting of Zn, Co, and Cr; and a balance of Sn.

Abstract: There is provided a solder alloy in which 0.5 mass % or more and 1.25 mass % or less of Sb, In satisfying the following formula (I) or (II) when [Sb] is set as a Sb content percentage (mass %) and [In] is set as an In content percentage (mass %): in a case of 0.5?[Sb]?1.0, 5.5?[In]?5.50+1.06[Sb] . . . (I), in a case of 1.0<[Sb]?1.25, 5.5?[In]?6.35+0.212[Sb] . . . (II) (in the formula, [Sb] indicates a Sb content percentage (mass %) and [In] indicates an In content percentage (mass %)), 0.5 mass % or more and 1.2 mass % or less of Cu, 0.1 mass % or more and 3.0 mass % or less of Bi, 1.0 mass % or more and 4.0 mass % or less of Ag, and 0 mass % or more and 0.025 mass % or less of Co are contained, and has the remainder consisting essentially of Sn.

Abstract: There is provided a bonding material which forms a bonding portion between two objects, which material contains (1) first metal particles comprising a first metal and having a median particle diameter in the range of 20 nm to 1 ?m, and (2) second metal particles comprising, as a second metal, at least one alloy of Sn and at least one selected from Bi, In and Zn and having a melting point of not higher than 200° C.

Abstract: A mounting structure is used, which includes: a semiconductor element including an element electrode; a metal member; and a sintered body configured to bond the semiconductor element and the metal member is used, in which the sintered body contains a first metal and a second metal solid-dissolved in the first metal, the second metal is a metal having a diffusion coefficient in the first metal larger than a self-diffusion coefficient of the first metal, and a content ratio of the second metal relative to a total mass of the first metal and the second metal in the sintered body is equal to or lower than a solid solution limit of the second metal to the first metal.

Abstract: To provide a method for efficiently producing metal microparticles having a particle diameter of 1 ?m to 10 ?m, and a device for producing the same. A metal microparticle production method is used, which includes a particle generating step of generating primary particles by irradiating a metal lump in a solvent in a first tank with an ultrasonic wave, and a particle splitting step of irradiating the primary particles with an ultrasonic wave in a solvent in a second tank and splitting the primary particles to produce secondary particles.

Abstract: A mount structure having a joining capable of withstanding development of cracks generated by thermal stress due to repeated temperature changes in a mount structure having the joining of a large area is formed by joining a ceramic substrate electrode of a ceramic substrate and a metal substrate electrode of a metal substrate by a laminate, in which the laminate is formed by stacking a first interface layer, a first solder joining portion, a second interface layer, a first buffer material electrode, a buffer material, a second buffer material electrode, a third interface layer, a second solder joining portion and a fourth interface layer in this order from the ceramic substrate electrode toward the metal substrate electrode, a thickness of the laminate is 30 ?m or more and 100 ?m or less, a difference between a thickness of the first solder joining portion and a thickness of the second solder joining portion is within 25%, and differences in elastic moduli and in linear expansion coefficients between the firs

Abstract: A solder alloy of the disclosure includes Sb of which a content is in a range of 3 wt % to 30 wt %, Te of which a content is in a range of 0.01 wt % to 1.5 wt %, Au of which a content is in a range of 0.005 wt % to 1 wt %, at least one of Ag and Cu, wherein a content rate of at least one of Ag and Cu in the solder alloy is in a range of 0.1 wt % to 20 wt %; and a content rate of a sum of Ag and Cu in the solder alloy is in a range of 0.1 wt % to 20 wt %; and a balance of Sn.

Abstract: A jointing material includes: at least one type of element at 0.1 wt % to 30 wt %, the element being capable of forming a compound with each of tin and carbon; and tin at 70 wt % to 99.9 wt % as a main component.

Abstract: A solder alloy, includes: about 3 wt % to about 15 wt % of Sb; about 0.01 wt % to about 1.5 wt % of Te; and about 0.005 wt % to about 1 wt % of at least one element selected from the group consisting of Zn, Co, and Cr; and a balance of Sn.

Abstract: A mount structure includes two members that are bonded to each other with a bonding material layer having a first interface layer and a second interface layer at the interfaces with the two members. The bonding material layer contains a first intermetallic compound and a stress relaxation material. The first intermetallic compound has a spherical, a columnar, or an oval spherical shape, and the same crystalline structure as the first interface layer and the second interface layer, and partly closes the space between the first interface layer and the second interface layer. The stress relaxation material contains tin as a main component, and fills around the first intermetallic compound.

Abstract: A solder alloy of the disclosure includes Sb of which a content is in a range of 3 wt % to 30 wt %, Te of which a content is in a range of 0.01 wt % to 1.5 wt %, Au of which a content is in a range of 0.005 wt % to 1 wt %, at least one of Ag and Cu, wherein a content rate of at least one of Ag and Cu in the solder alloy is in a range of 0.1 wt % to 20 wt %; and a content rate of a sum of Ag and Cu in the solder alloy is in a range of 0.1 wt % to 20 wt %; and a balance of Sn.

Abstract: A mount structure having a joining capable of withstanding development of cracks generated by thermal stress due to repeated temperature changes in a mount structure having the joining of a large area is formed by joining a ceramic substrate electrode of a ceramic substrate and a metal substrate electrode of a metal substrate by a laminate, in which the laminate is formed by stacking a first interface layer, a first solder joining portion, a second interface layer, a first buffer material electrode, a buffer material, a second buffer material electrode, a third interface layer, a second solder joining portion and a fourth interface layer in this order from the ceramic substrate electrode toward the metal substrate electrode, a thickness of the laminate is 30 ?m or more and 100 ?m or less, a difference between a thickness of the first solder joining portion and a thickness of the second solder joining portion is within 25%, and differences in elastic moduli and in linear expansion coefficients between the firs

Abstract: Provided is a solder alloy including an Sb content of 3 wt % or more and 15 wt % or less, a Te content of 0.01 wt % or more and 1.5 wt % or less, an Au content of 0.005 wt % or more and 1 wt % or less, and a remainder that is Sn.

Abstract: A mounting structure includes a BGA including a BGA electrode, a circuit board including a circuit board electrode, and a solder joining portion which is arranged on the circuit board electrode and is connected to the BGA electrode. The solder joining portion is formed of Cu having a content ratio in a range from 0.6 mass % to 1.2 mass %, inclusive, Ag having a content ratio in a range from 3.0 mass % to 4.0 mass %, inclusive, Bi having a content ratio in a range from 0 mass % to 1.0 mass %, inclusive, In, and Sn. A range of the content ratio of In is different according to the content ratio of Cu.