Abstract: A liquid dispersion of metal nanoparticles for solder paste comprises metal nanoparticles made of an alloy and a reducing dispersion medium, wherein the metal nanoparticles have an average particle diameter of 1.0 to 200 nm, the metal nanoparticles have a sintering initiation temperature of less than 50° C., and the liquid dispersion comprises substantially no surfactant or surface modifier.

Abstract: There is provided a solder alloy in which 0.5 mass % or more and 1.25 mass % or less of Sb, In satisfying the following formula (I) or (II) when [Sb] is set as a Sb content percentage (mass %) and [In] is set as an In content percentage (mass %): in a case of 0.5?[Sb]?1.0, 5.5?[In]?5.50+1.06[Sb] . . . (I), in a case of 1.0<[Sb]?1.25, 5.5?[In]?6.35+0.212[Sb] . . . (II) (in the formula, [Sb] indicates a Sb content percentage (mass %) and [In] indicates an In content percentage (mass %)), 0.5 mass % or more and 1.2 mass % or less of Cu, 0.1 mass % or more and 3.0 mass % or less of Bi, 1.0 mass % or more and 4.0 mass % or less of Ag, and 0 mass % or more and 0.025 mass % or less of Co are contained, and has the remainder consisting essentially of Sn.

Abstract: Solder material used in soldering of an Au electrode including Ni plating containing P includes Ag satisfying 0.3?[Ag]?4.0, Bi satisfying 0?[Bi]?1.0, and Cu satisfying 0<[Cu]?1.2, where contents (mass %) of Ag, Bi, Cu and In in the solder material are denoted by [Ag], [Bi], [Cu], and [In], respectively. The solder material includes In in a range of 6.0?[In]?6.8 when [Cu] falls within a range of 0<[Cu]<0.5, In in a range of 5.2+(6?(1.55×[Cu]+4.428))?[In]?6.8 when [Cu] falls within a range of 0.5?[Cu]?1.0, In in a range of 5.2?[In]?6.8 when [Cu] falls within a range of 1.0<[Cu]?1.2. A balance includes only not less than 87 mass % of Sn.

Abstract: A solder alloy contains 0.5 mass % or more and 1.25 mass % or less of Sb, In which satisfies 5.5?[In]?5.50+1.06[Sb] in a case of 0.5?[Sb]?1.0; and 5.5?[In]?6.35+0.212[Sb] in a case of 1.0<[Sb]?1.25 (in the expression, [Sb] indicates the Sb content percentage (mass %) and [In] indicates the In content percentage (mass %)), 0.5 mass % or more and 1.2 mass % or less of Cu, 0.1 mass % or more and 3.0 mass % or less of Bi, and 1.0 mass % or more and 4.0 mass % or less of Ag. The remainder is formed from Sn.

Abstract: Provided is a flux for soldering that can suppress a crack in a flux residue even if the flux for soldering is exposed to a cooling and heating cycle at the highest temperature of 150° C. such as the inside of an engine room of automobiles for a long period of time, and a soldering paste composition including the flux for soldering. The flux for soldering includes a synthetic resin, an activator, an organic solvent, and a thixotropic agent, in which synthetic resin contains a triblock copolymer of methacrylic acid ester with acrylic acid ester configured of a linear alkyl moiety having 3 to 6 carbon atoms. In addition, a soldering paste composition including the flux for soldering is used.

Abstract: A solder alloy is substantially Ag-free and has desirable neat-resistance fatigue characteristics in a high-temperature environment as high as 150° C., even when used for soldering of electronic components having no leads. The solder alloy contains Sb, In, Cu, and Bi, and Sn accounting for the remainder, and satisfies the following formulae: 0.5?[Sb]?1.25 0.66[Sb]+4.16?[In]?6.0 0.5?[Cu]?1.2 0.1?[Bi]?0.5, wherein [Sb], [In], [Cu], and [Bi] represent the contents of Sb, In, Cu, and Bi, respectively, in mass %.

Abstract: The present invention has an aspect to provide a mounted structure of which heat-resistant fatigue characteristic is improved. A mounted structure is provided with a substrate having a substrate electrode, an electronic component having a component electrode, and a bonding part bonding the substrate electrode and the component electrode, wherein the bonding part is constituted by a solder reinforcing part and a solder bonding part, the solder reinforcing part is a side vicinity part of the bonding part, and is constituted by In of 3 wt % or more and 8 wt % or less and Sn of 88 wt % or more, and the solder bonding part is constituted by a Sn—Bi system solder material and In of 0 wt % or more and less than 3 wt %.

Abstract: A mounting structure includes a BGA including a BGA electrode, a circuit board including a circuit board electrode, and a solder joining portion which is arranged on the circuit board electrode and is connected to the BGA electrode. The solder joining portion is formed of Cu having a content ratio in a range from 0.6 mass % to 1.2 mass %, inclusive, Ag having a content ratio in a range from 3.0 mass % to 4.0 mass %, inclusive, Bi having a content ratio in a range from 0 mass % to 1.0 mass %, inclusive, In, and Sn. A range of the content ratio of In is different according to the content ratio of Cu.

Abstract: Solder material used in soldering of an Au electrode including Ni plating containing P includes Ag satisfying 0.3?[Ag]?4.0, Bi satisfying 0?[Bi]?1.0, and Cu satisfying 0<[Cu]?1.2, where contents (mass %) of Ag, Bi, Cu and In in the solder material are denoted by [Ag], [Bi], [Cu], and [In], respectively. The solder material includes In in a range of 6.0?[In]?6.8 when [Cu] falls within a range of 0<[Cu]<0.5, In in a range of 5.2+(6?(1.55×[Cu]+4.428))?[In]?6.8 when [Cu] falls within a range of 0.5?[Cu]?1.0, In in a range of 5.2?[In]?6.8 when [Cu] falls within a range of 1.0<[Cu]?1.2. A balance includes only not less than 87 mass % of Sn.

Abstract: Solder material used in soldering of an Au electrode including Ni plating containing P includes Ag satisfying 0.3?[Ag]?4.0, Bi satisfying 0?[Bi]?1.0, and Cu satisfying 0?[Cu]?1.2, where contents (mass %) of Ag, Bi, Cu and In in the solder material are denoted by [Ag], [Bi], [Cu], and [In], respectively. The solder material includes In in a range of 6.0?[In]?6.8 when [Cu] falls within a range of 0<[Cu]<0.5, In in a range of 5.2+(6?(1.55×[Cu]+4.428))?[In]?6.8 when [Cu] falls within a range of 0.5?[Cu]?1.0, In in a range of 5.2?[In]?6.8 when [Cu] falls within a range of 1.0<[Cu]?1.2. A balance includes only not less than 87 mass % of Sn.

Abstract: Solder material used in soldering of an Au electrode including Ni plating containing P includes Ag satisfying 0.3?[Ag]?4.0, Bi satisfying 0?[Bi]?1.0, and Cu satisfying 0?[Cu]?1.2, where contents (mass %) of Ag, Bi, Cu and In in the solder material are denoted by [Ag], [Bi], [Cu], and [In], respectively. The solder material includes In in a range of 6.0?[In]?6.8 when [Cu] falls within a range of 0<[Cu]<0.5, In in a range of 5.2+(6?(1.55×[Cu]+4.428))?[In]?6.8 when [Cu] falls within a range of 0.5?[Cu]?1.0, In in a range of 5.2?[In]?6.8 when [Cu] falls within a range of 1.0<[Cu]?1.2. A balance includes only not less than 87 mass % of Sn.

Abstract: A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer.

Abstract: A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion.

Abstract: A solder material includes 1.0-4.0% by weight of Ag, 4.0-6.0% by weight of In, 0.1-1.0% by weight of Bi, 1% by weight or less (excluding 0% by weight) of a sum of one or more elements selected from the group consisting of Cu, Ni, Co, Fe and Sb, and a remainder of Sn. When a copper-containing electrode part of an electronic component is connected to a copper-containing electrode land of a substrate by using this solder material, a part having an excellent stress relaxation property can be formed in the solder-connecting part and a Cu—Sn intermetallic compound can be rapidly grown from the electrode land and the electrode part to form a strong blocking structure.

Abstract: The present invention has an aspect to provide a mounted structure of which heat-resistant fatigue characteristic is improved. A mounted structure is provided with a substrate having a substrate electrode, an electronic component having a component electrode, and a bonding part bonding the substrate electrode and the component electrode, wherein the bonding part is constituted by a solder reinforcing part and a solder bonding part, the solder reinforcing part is a side vicinity part of the bonding part, and is constituted by In of 3 wt % or more and 8 wt % or less and Sn of 88 wt % or more, and the solder bonding part is constituted by a Sn—Bi system solder material and In of 0 wt % or more and less than 3 wt %.

Abstract: A mounting structure includes an insulating substrate having a substrate electrode on which at least one electrode notch is provided and a resist, an electronic component having an electronic component electrode to be electrically connected to the substrate electrode, and solder paste printed on a surface of the substrate electrode. The substrate electrode has a following relation, 0<h (?m)?x (?m)+75 (?m), where h (?m) is a width and x (?m) is a depth of the electrode notch, and the electrode notch is formed from an end of an area, which is located under of the electronic component electrode, of the substrate electrode, or from inside of the area to a peripheral side of the substrate electrode, and the electrode notch does not reach a peripheral side, which is located under the electronic component, of the substrate electrode.

Abstract: A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer.

Abstract: A joint structure joins an electronic element 12 included in an electronic component to an electrode 14 included in that electronic component. The joint structure includes a solder layer, which contains 0.2 to 6% by weight of copper, 0.02 to 0.2% by weight of germanium and 93.8 to 99.78% by weight of bismuth, a nickel layer provided between the solder layer and the electrode, and a barrier layer provided between the nickel layer and the solder layer. Here, the barrier layer is formed so as to have an average thickness of from 0.5 to 4.5 ?m after the electronic element and the electrode are joined by the solder layer.

Abstract: The present invention provides a semiconductor component having a joint structure including a semiconductor device, an electrode disposed opposite the semiconductor device, and a joining material which contains Bi as main component and connects the semiconductor device to the electrode. Since the joining material contains a carbon compound, joint failure due to the difference in linear expansion coefficient between the semiconductor device and the electrode can be reduced compared with conventional materials. The joining material which contains Bi as main component enables provision of a joint structure in which a semiconductor device and an electrode are joined by a joint more reliable than a conventional joint.

Abstract: A manufacturing method for a bonded structure, in which a semiconductor device is bonded to an electrode by a bonding portion, the method including: first mounting a solder ball, in which a surface of a Bi ball is coated with Ni plating, on the electrode that is heated to a temperature equal to or more than a melting point of Bi; second pressing the solder ball against the heated electrode, cracking the Ni plating, spreading molten Bi on a surface of the heated electrode, and forming a bonding material containing Bi-based intermetallic compound of Bi and Ni; and third mounting the semiconductor device on the bonding material.