Abstract: A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.

Abstract: In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (?f). In some embodiments, the sensitivity to changes in ?f is reduced by varying the charged particle surface dosage for a portion of the pattern. Methods for forming patterns on a surface, and for manufacturing an integrated circuit are also disclosed, in which pattern sensitivity to changes in ?f is reduced.

Abstract: In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, where a non-circular target pattern to be formed on a surface is input. A plurality of charged particle beam shots for a multi-beam charged particle beam system is determined, where the plurality of shots will form a pattern on the surface, each charged particle beam shot being a multi-beam shot comprising a plurality of circular or nearly-circular beamlets. The pattern on the surface matches the target pattern within a predetermined tolerance. The determining is performed using a computing hardware device.

Abstract: A method and system for fracturing or mask data preparation is disclosed in which a desired substrate pattern for a substrate is input. A plurality of charged particle beam shots is then determined which will form a reticle pattern on a reticle, where the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern. A similar method and a similar system for forming a pattern on a reticle are also disclosed.

Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.

Abstract: A method for mask data preparation (MDP) is disclosed, in which a set of shots is determined that will form a pattern on a reticle, where the determination includes calculating the pattern that will be formed on a substrate using an optical lithographic process with a reticle formed using the set of shots. A method for optical proximity correction (OPC) or MDP is also disclosed, in which a preliminary set of charged particle beam shots is generated using a preliminary mask model, and then the shots are modified by calculating both a reticle pattern using a final mask model, and a resulting substrate pattern. A method for OPC is also disclosed, in which an ideal pattern for a photomask is calculated from a desired substrate pattern, where the model used in the calculation includes only optical lithography effects and/or substrate processing effects.

Abstract: A method and system for fracturing or mask data preparation are presented in which a set of shots is determined for a multi-beam charged particle beam writer. The edge slope of a pattern formed by the set of shots is calculated. An edge of the pattern which has an edge slope below a target level is identified, and the dosage of a beamlet in a shot in the set of shots is increased to improve the edge slope. The improved edge slope remains less than the target level.

Abstract: A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.

Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.

Abstract: A method and system for fracturing or mask data preparation is disclosed in which a desired substrate pattern for a substrate is input. A plurality of charged particle beam shots is then determined which will form a reticle pattern on a reticle, where the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern. A similar method and a similar system for forming a pattern on a reticle are also disclosed.

Abstract: A method and system for fracturing or mask data preparation is disclosed in which a plurality of charged particle beam shots is determined which will produce a pattern on a reticle, where the reticle is to be used to form an aerial image on a resist-coated substrate using an optical lithographic process. A simulated reticle pattern is then calculated from the plurality of charged particle beam shots. A calculated aerial substrate image is then calculated using the simulated reticle pattern, and a shot in the plurality of shots is modified to improve the calculated aerial substrate image. Similar methods for forming a pattern on a reticle and for manufacturing an integrated circuit are also disclosed.

Abstract: In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, where a non-circular target pattern to be formed on a surface is input. A plurality of charged particle beam shots for a multi-beam charged particle beam system is determined, where the plurality of shots will form a pattern on the surface, each charged particle beam shot being a multi-beam shot comprising a plurality of circular or nearly-circular beamlets. The pattern on the surface matches the target pattern within a predetermined tolerance. The determining is performed using a computing hardware device.

Abstract: A method for optical proximity correction (OPC) is disclosed, in which a set of VSB shots is determined, where the set of shots can approximately form a target reticle pattern that is an OPC-compensated version of an input pattern. The set of shots is simulated to create a simulated reticle pattern. A substrate image is calculated, based on using the simulated reticle pattern in an optical lithographic process to form the substrate image. A system for OPC is also disclosed.

Abstract: A method for fracturing or mask data preparation is disclosed, in which a set of shots is determined, where each shot will direct a circular or nearly-circular dosage pattern to a surface, where each shot comprises a shot dosage, and in which the set of shots is output. A method for forming patterns on a surface using charged particle beam lithography is also disclosed, in which a stencil is provided comprising one or more circular apertures, and where a plurality of circular patterns of different sizes are formed on the surface using a single aperture, by varying the shot dosage.

Abstract: A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.

Abstract: A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.

Abstract: A method and system for fracturing or mask data preparation or proximity effect correction is disclosed in which a series of charged particle beam shots is determined, where the series of shots is capable of forming a continuous non-manhattan track on a surface, such that the non-manhattan track has a line width roughness (LWR) which nearly equals a target LWR. A method and system for fracturing or mask data preparation or proximity effect correction is also disclosed in which at least two series of shots are determined, where each series of shots is capable of forming a continuous non-manhattan track on a surface, and where the space between tracks has space width roughness (SWR) which nearly equals a target SWR.

Abstract: In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (?f). In some embodiments, the sensitivity to changes in ?f is reduced by varying the charged particle surface dosage for a portion of the pattern. Methods for forming patterns on a surface, and for manufacturing an integrated circuit are also disclosed, in which pattern sensitivity to changes in ?f is reduced.

Abstract: A method for fracturing or mask data preparation is disclosed in which a plurality of single-beam charged particle beam shots is used to create a plurality of multi-beam shots, where multi-beam exposure information is determined for each of the single-beam shots, and then the resulting multi-beam exposure information is used to generate a set of multi-beam shots. Additionally, a method for fracturing or mask data preparation is disclosed in which a plurality of single-beam shots is used to generate a set of multi-beam shots by calculating an image which the single-beam shots would form on a surface.

Abstract: A method for forming a pattern on a surface using charged particle beam lithography is disclosed, where the shots in an ordered set of input shots are modified within a subfield to reduce either a thermal variation or a maximum temperature of the surface during exposure by the charged particle beam writer. A method for fracturing or mask data processing is also disclosed, where an ordered set of shots is generated which will expose at least one subfield of a surface using a shaped beam charged particle beam writer, and where a temperature or a thermal variation generated on the surface during the exposure of one subfield is calculated. Additionally, a method for forming a pattern on a surface with an ordered set of shots using charged particle beam lithography is disclosed, in which a blanking period following a shot is lengthened to reduce the maximum temperature of the surface.