Abstract: Provided is a semiconductor device, comprising a gate electrode formed on a semiconductor substrate, source/drain diffusion layers formed on both sides of the gate electrode, a gate electrode side-wall on the side of the source/drain diffusion layer and a gate side-wall insulating film covering a part of the upper surface of the semiconductor substrate in the vicinity of the gate electrode and having an L-shaped/reversed L-shaped cross-sectional shape, and a semiconductor layer extending over the gate side-wall insulating film covering a part of the upper surface of the semiconductor substrate in the vicinity of the gate electrode.

Abstract: A gate electrode is provided via a gate insulating film formed between the source and drain regions on a semiconductor substrate, wherein the sidewall of the gate electrode excluding the exposed part formed at the upper part thereof facing the source and drain regions is covered with a sidewall insulating film, and an epitaxial film is formed on the exposed part of the sidewall of the gate electrode but not formed on a top surface of the gate electrode. An element isolation region formed on the semiconductor substrate is composed of a first insulating film formed in the semiconductor substrate and a second insulating film which is formed inside the first insulating film and has a lower epitaxial growth rate than that of the first insulating film, and the surface of the source and drain regions is covered with a silicon layer, part of which runs onto the surface of the first insulating film.

Abstract: A shallow impurity diffusion layer adjacent to a gate electrode is formed by forming a side-wall insulating film of the gate electrode twice, and a MOS transistor of the salicide type having improved short-channel effect is embodied. An impurity diffusion layer portion not adjacent to a gate electrode of a source/drain region is formed first by self-alignment with a first side-wall insulating film. After an impurity diffusion layer adjacent to the gate electrode is formed by self-alignment with the gate electrode, a second side-wall insulating film is formed. Silicide films are formed on the gate electrode and source/drain region by self-alignment with the second side-wall insulating film.

Abstract: Provided is a semiconductor device, comprising a gate electrode formed on a semiconductor substrate, source/drain diffusion layers formed on both sides of the gate electrode, a gate electrode side-wall on the side of the source/drain diffusion layer and a gate side-wall insulating film covering a part of the upper surface of the semiconductor substrate in the vicinity of the gate electrode and having an L-shaped/reversed L-shaped cross-sectional shape, and a semiconductor layer extending over the gate side-wall insulating film covering a part of the upper surface of the semiconductor substrate in the vicinity of the gate electrode.

Abstract: A gate electrode is provided via a gate insulating film formed between the source and drain regions on a semiconductor substrate, wherein the sidewall of the gate electrode excluding the exposed part formed at the upper part thereof facing the source and drain regions is covered with a sidewall insulating film, and an epitaxial film is formed on the exposed part of the sidewall of the gate electrode but not formed on a top surface of the gate electrode. An element isolation region formed on the semiconductor substrate is composed of a first insulating film formed in the semiconductor substrate and a second insulating film which is formed inside the first insulating film and has a lower epitaxial growth rate than that of the first insulating film, and the surface of the source and drain regions is covered with a silicon layer, part of which runs onto the surface of the first insulating film.

Abstract: A shallow impurity diffusion layer adjacent to a gate electrode is formed by forming a side-wall insulating film of the gate electrode twice, and a MOS transistor of the salicide type having improved short-channel effect is embodied. An impurity diffusion layer portion not adjacent to a gate electrode of a source/drain region is formed first by self-alignment with a first side-wall insulating film. After an impurity diffusion layer adjacent to the gate electrode is formed by self-alignment with the gate electrode, a second side-wall insulating film is formed. Silicide films are formed on the gate electrode and source/drain region by self-alignment with the second side-wall insulating film.

Abstract: On the surface of a hydrogen-terminated diamond 1 formed by terminating a surface 2 of either a homoepitaxial diamond or a heteroepitaxial diamond or a surface-flattened polycrystal diamond are formed a drain-ohmic contact 4 and a source-ohmic contact 3 of gold or platinum, an insulating layer 5 formed of silicon oxide (SiO.sub.x : 1.ltoreq.X.ltoreq.2) and a gate electrode 6 mounted on said insulating layer, and the surface other than the element forming region is set to be an insulating region being non-hydrogen-terminated, for example, oxygen-terminated, and the elements formed on said region is being isolated.

Abstract: On the surface of a hydrogen-terminated diamond 1 formed by terminating a surface 2 of either a homoepitaxial diamond or a heteroepitaxial diamond or a surface-flattened polycrystal diamond are formed a drain-ohmic contact 4 and a source-ohmic contact 3 of gold or platinum, an insulating layer 5 formed of silicon oxide (SiO.sub.x : 1.ltoreq.X.ltoreq.2) and a gate electrode 6 mounted on said insulating layer, and the surface other than the element forming region is set to be an insulating region being non-hydrogen-terminated, for example, oxygen-terminated, and the elements formed on said region is being isolated.