Abstract: An organic EL display (1) has a bend (B) where a slit (81) is bored in a base coat film (23), gate insulating film (27), first interlayer insulating film (31) and second interlayer insulating film (35). The bend is provided with a filler layer (83) filling the slit and covering both edges of the slit. The filler layer has a protrusion (85) overlapping each edge in the width direction of the slit. A routed wire (7) routed from the display region (D) and then routed over the filler layer to reach a terminal section (T) extends over the protrusion.

Abstract: A display device includes: a plurality of control lines; a plurality of power supply lines; a plurality of data signal lines; an oxide semiconductor layer; a first metal layer; a gate insulation film; a first inorganic insulation film; a second metal layer; a second inorganic insulation film; and a third metal layer. The oxide semiconductor layer, in a plan view, contains therein semiconductor lines formed as isolated regions between a plurality of drivers and a display area. The semiconductor lines cross the plurality of control lines and the plurality of power supply lines, are in contact with the plurality of control lines via an opening in a gate insulation film, are in contact with the plurality of power supply lines via an opening in the first inorganic insulation film, and have a plurality of narrowed portions, such that thicker and thinner regions exist along the same line.

Abstract: A first conductive layer in the same layer as that of a first electrode is coupled to a third conductive layer and a second electrode in the same layer as that of a third metal layer through a slit formed in a flattening film of a non-display area. Second conductive layers in the same layer as that of a second metal layer are provided to overlap with the slit.

Abstract: In a vapor phase growth system in which a preheating ring is provided around a susceptor, the flow rate of source gas can be adjusted by changing the position of the susceptor, and the effect on the film thickness variation of a semiconductor single-crystal layer due to the changes of the position of the susceptor is caused to be less likely to occur. The susceptor is raised/lowered by a susceptor position changing mechanism, and the height position of holding the susceptor in a reaction vessel body can be changed. A preheating ring position changing mechanism changes the height position of holding the preheating ring in the reaction vessel body based on raising/lowering of the preheating ring in accordance with the changes of the height position of holding the susceptor.

Abstract: A vapor phase growth system includes a process chamber that includes a susceptor lifting mechanism that raises and lowers the susceptor between a first position and a second position. With the susceptor in the first position, the top surface of the susceptor is above the bottom surface of the preheating ring, and a source gas distribution space with a predetermined height dimension is secured between the top surface of the susceptor and the bottom surface of a ceiling plate of the reaction vessel body. With the susceptor in the second position, the top surface of the susceptor is located below the bottom surface of a preheating ring, and a substrate loading/unloading space, which has a greater height dimension than that of the source gas distribution space, is secured between the top surface of the susceptor and the bottom surface of the preheating ring.

Abstract: A suction traveling device includes: a main pressure reducing chamber, sub pressure reducing chambers communicating with the main pressure reducing chamber and disposed in drive parts, ventilation holes on a same side of the sub pressure reducing chamber as suction holes and communicating the sub pressure reducing chambers and suction holes, and an open/close unit for releasing the ventilation holes when a pressure in suction chambers formed by a wall surface and the suction holes is equal to a pressure in the sub pressure reducing chamber and for closing the ventilation holes when the pressure in the suction chambers is higher than in the sub pressure reducing chamber. When the ventilation hole is closed, a gap of a size preventing the pressure in the sub pressure reducing chamber from affecting the pressure in the other suction chamber is formed in the ventilation hole.

Abstract: Embodiments described herein relate to a lower side wall for use in a processing chamber. a lower side wall for use in a processing chamber is disclosed herein. The lower side wall includes an inner circumference, an outer circumference, a top surface, a plurality of flanges, and a first concave portion. The outer circumference is concentric with the inner circumference. The plurality of flanges project from the inner circumference. The first concave portion includes a plurality of grooves arranged along a circumferential direction of the lower side wall. Each groove has an arc shape such that the plurality of grooves concentrate a gas when the gas contacts the plurality of grooves.

Abstract: A process chamber of an epitaxial growth apparatus is directed to a process chamber configured to perform reaction processing on a semiconductor substrate, which includes a susceptor supported and disposed in the process chamber by a shaft member supporting only a central portion in a radial direction and extending in an upward/downward direction, and on which the semiconductor substrate is placed, a finger plate wafer lift disposed below the susceptor and configured to be movable in an axial direction of the shaft member, and a lift pin configured to displace the semiconductor substrate upward from an upper surface of the susceptor to approach the finger plate wafer lift to the susceptor, and a through-hole through which the lift pin passes is formed in the susceptor.

Abstract: A suction traveling device includes: a main pressure reducing chamber, sub pressure reducing chambers communicating with the main pressure reducing chamber and disposed in drive parts, ventilation holes on a same side of the sub pressure reducing chamber as suction holes and communicating the sub pressure reducing chambers and suction holes, and an open/close unit for releasing the ventilation holes when a pressure in suction chambers formed by a wall surface and the suction holes is equal to a pressure in the sub pressure reducing chamber and for closing the ventilation holes when the pressure in the suction chambers is higher than in the sub pressure reducing chamber. When the ventilation hole is closed, a gap of a size preventing the pressure in the sub pressure reducing chamber from affecting the pressure in the other suction chamber is formed in the ventilation hole.

Abstract: An epitaxial growth device comprises a reaction chamber defined by a substrate setting portion, a ceiling board and a sidewall portion, a heating member and reactant gas-introduction member. The ceiling board is fixed to a ring-like support portion having a through-hole as viewed from above. A diameter of the through-hole becomes reduced gradually toward a substrate-side. The ceiling board is fixed to an end portion of the substrate-side of the through-hole.

Abstract: [Problem to be Solved] To provide a digital signage method and a system for implementing the same that perform content distribution, and the like, to each particular reproduction terminal without depending on the public line network, allowing it to avoid occurrence of a problem, such as an illegal alteration of a distribution content, and also to make schedule management of each particular reproduction terminal, being based on the time setting.

Abstract: Embodiments described herein relate to a lower side wall for use in a processing chamber. a lower side wall for use in a processing chamber is disclosed herein. The lower side wall includes an inner circumference, an outer circumference, a top surface, a plurality of flanges, and a first concave portion. The outer circumference is concentric with the inner circumference. The plurality of flanges project from the inner circumference. The first concave portion includes a plurality of grooves arranged along a circumferential direction of the lower side wall. Each groove has an arc shape such that the plurality of grooves concentrate a gas when the gas contacts the plurality of grooves.

Abstract: A semiconductor wafer position display system, a semiconductor wafer position display method, and a semiconductor wafer position display program with which a deviation from an appropriate placement position of a semiconductor wafer mounted in a wafer mounting part can be displayed to a user in an easily understood manner are provided.

Abstract: Embodiments described herein relate to a lower side wall for use in a processing chamber. In one embodiment, the lower side wall includes an annular body. The annular body as an inner circumference, an outer circumference, a plurality of flanges projecting from the inner circumference, and a first concave portion formed in the outer circumference. The outer circumference has a plurality of grooves arranged in a circumferential direction of the lower side wall. In another embodiment, the annular body further includes a top surface having a mounting surface formed thereon and a second concave portion formed opposite the first concave portion. The second concave portion has a plurality of purge holes. In another embodiment, each groove of the plurality of grooves formed in the first concave portion has an arc shape.

Abstract: A method provide high-purity nitric oxide by preserving quality of the nitric oxide by suitably inhibiting the disproportionation reaction of the nitric oxide that is transported in a state of being stored in a high-pressure gas cylinder, and decreasing the amount of nitrous oxide and nitrogen dioxide that are produced during the transportation. When the nitric oxide is transported in a state of being stored in the high-pressure gas cylinder, the nitric oxide is filled into the high-pressure gas cylinder at a gauge pressure between 1.96 MPa to 3.5 MPa to be stored, and is transported in a state in which the exterior surface temperature of the high-pressure gas cylinder is held in a range from ?15° C. to 5° C.

Abstract: A ceiling portion for use in a processing apparatus and an epitaxial growth apparatus having the ceiling portion are disclosed herein. In one embodiment the ceiling portion includes a ring shaped support and a ceiling plate. The ring shaped support includes an inner surface having a first slope portion decreasing from a top surface of the ring shaped support towards a center of the ring shaped support and a protrusion, protruding from the inner surface, having a second slope portion decreasing in a protruding direction towards the center of the ring shaped support. The ceiling plate is coupled to the support. In another embodiment, the first slope portion and the second slope portion meet at a point, wherein an angle formed by the first slope portion and the second slope portion is less than 90 degrees.

Abstract: A motor cooling structure for cooling a motor, which includes a shaft transmitting power and a rotor core attached to an outside of the shaft, by a cooling medium, includes: a cooling medium supply passage that extends to an inside of the shaft in an axial direction of the shaft and passes the cooling medium through the cooling medium supply passage; and a plurality of cooling medium passages that are branched from the cooling medium supply passage to cool the rotor core while flowing the cooling medium without branching the cooling medium in the axial direction and then eject the cooling medium from a plurality of ejection holes opened to a surface of the rotor core, wherein distances from a cooling medium inlet, through which the cooling medium flows into the cooling medium supply passage, to the respective ejection holes are equal between the plurality of cooling medium passages.

Abstract: An electrical motor that includes a circular stator attached to an inner side of a housing and a rotor disposed at an inner side of the stator in a radial direction, the electrical motor includes: a terminal connected to a power supply cable drawn from a coil of the stator; a terminal box that is attached to the housing and stores the terminal; and an insulating material that is disposed between the terminal box and the terminal and separable from the terminal.

Abstract: An interlock mechanism of a motor, includes a terminal box configured to store a terminal used to connect a power supply cable to the motor; a lid configured to close the terminal box; a fixing member configured to fix the lid to the terminal box; a first connector attached to the lid; a second connector capable of being coupled with the first connector and configured to cover the fixing member in a state that the second connector is coupled with the first connector.